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    Untitled

    Abstract: No abstract text available
    Text: 214PIN DDR2 533 Micro-DIMM 1GB With 64Mx16 CL4 TS128MMQ64V5Q Description Placement The TS128MMQ64V5Q is a 128M x 64bits DDR2-533 J Micro-DIMM. The TS128MMQ64V5Q consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board


    Original     		PDF 214PIN 64Mx16 TS128MMQ64V5Q TS128MMQ64V5Q 64bits DDR2-533 64Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE DDR SDRam 64Mx16-SOP Double Data Rate SDRam MODULE 3D 1D1G16TS1267 1Gbit DDR SDRam organized as 64Mx16 Pin Assignment Top View SOP 66 (Pitch : 0.65 mm) Features • • • • • • • • • • • • • • • • One 1Gbit DDR SDRam


    Original     		PDF 64Mx16-SOP 1D1G16TS1267 64Mx16 64Mx16bit MMDD16064601STC 3DFP-0267-RV

    3D2D4G72UB3478

    Abstract: No abstract text available
    Text: MEMORY MODULE DDR2 SDRam 64Mx72-BGA DDR2 SDRAM MODULE 3D 2D4G72UB3478 4Gbit DDR2 SDRam organized as 64Mx72, based on 64Mx16 Pin Assignment BGA 191 - 12x20 - Pitch 1.27mm Features • Organized as 64Mx72  Core supply voltage 1.8V +/- 0.1V  I/O supply voltage 1.8V +/- 0.1V


    Original     		PDF 64Mx72-BGA 2D4G72UB3478 64Mx72, 64Mx16 12x20 64Mx72 3DFP-0478-REV 3D2D4G72UB3478

    SG564643FG8N6IR

    Abstract: DDR2-667-5-5-5 SG564643FG8N6KF SG564643FG8N6IL
    Text: SG564643FG8N6UU May 19, 2008 Ordering Information Part Numbers Description Module Speed SG564643FG8N6DB 64Mx64 512MB , DDR2, 240-pin DIMM, Unbuffered, Non-ECC, 64Mx16 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0


    Original     		PDF SG564643FG8N6UU SG564643FG8N6DB 64Mx64 512MB) 240-pin 64Mx16 DDR2-400-333, SG564643FG8N6IR DDR2-667-5-5-5 SG564643FG8N6KF SG564643FG8N6IL

    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A, IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V       


    Original     		PDF IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A, IS43/46TR81280AL 128MX8, 64MX16 cycles/64 cycles/32 1600MT/s IS43TR81280AL

    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V  Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C


    Original     		PDF IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 cycles/64 cycles/32 3TR81280BL -125JBL

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Aug. 2004 Preliminary


    Original     		PDF HY27UF HY27SF 128Mx8bit 64Mx16bit)

    NT1GC64BH8A1PS-BE

    Abstract: No abstract text available
    Text: NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M x 64 / 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333 64Mx16 1GB / 128Mx8 (2GB) SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency PC3-8500


    Original     		PDF NT1GC64BH8A1PS NT2GC64B8HA1NS PC3-8500 PC3-10600 DDR3-1066/1333 64Mx16 128Mx8 PC3-8500 204-Pin NT1GC64BH8A1PS-BE

    H5MS1G62

    Abstract: H5MS1G62MFP-J3M H5MS1G62MFP hynix mcp h5ms1g DDR400 ap die hen mcp H5MS1G62MFP-K3M
    Text: 1Gbit MOBILE DDR SDRAM based on 16M x 4Bank x16 I/O Specification of 1Gb 64Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 16,777,216 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 64Mx16bit) 16bit) H5MS1G62MFP page22) 00Typ. H5MS1G62 H5MS1G62MFP-J3M hynix mcp h5ms1g DDR400 ap die hen mcp H5MS1G62MFP-K3M

    Untitled

    Abstract: No abstract text available
    Text: H5PS1G63EFR 1Gb 64Mx16 DDR2 SDRAM H5PS1G63EFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1/ Oct. 2008


    Original     		PDF H5PS1G63EFR 64Mx16) 500Mhz 84Ball 13MAX

    PC2-6400

    Abstract: sodimm pinout 200Pin SO-DIMM PC2 6400 128 m 64 64mx16 NT2GT64U8HD0BN-AC pc2-4200
    Text: NT1GT64UH8D0FN / NT2GT64U8HD0BN 1GB: 128M x 64 / 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Based on DDR2-533/667/800 64Mx16 1GB /128Mx8 (2GB) SDRAM D-Die Features • Performance: PC2-4200 PC2-5300 PC2-6400 PC2-6400 -37B -3C -AD


    Original     		PDF NT1GT64UH8D0FN NT2GT64U8HD0BN PC2-4200 PC2-5300 PC2-6400 DDR2-533/667/800 64Mx16 /128Mx8 sodimm pinout 200Pin SO-DIMM PC2 6400 128 m 64 64mx16 NT2GT64U8HD0BN-AC

    Untitled

    Abstract: No abstract text available
    Text: FEDR26V01G54R-01-01 OKI Semiconductor MR26V01G54R 32M–Word x 32–Bit Page Mode Issue Date: Oct 30, 2007 P2ROM PIN CONFIGURATION TOP VIEW FEATURES 32Mx32 or 64Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit


    Original     		PDF FEDR26V01G54R-01-01 MR26V01G54R

    Untitled

    Abstract: No abstract text available
    Text: NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M x 64 / 1GB: 128M x 64 / 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 64Mx16 DDR2 SDRAM D-die 512MB Based on 128Mx8 DDR2 SDRAM D-die (1GB/2GB) Features


    Original     		PDF NT512T64UH4D0FY NT1GT64U88D0BY NT2GT64U8HD0BY 512MB: 240pin 64Mx16 512MB) 128Mx8 PC2-5300 PC2-6400

    128M*8BIT

    Abstract: No abstract text available
    Text: FEDR36V01G52B-002-01 Issue Date: Nov. 18, 2009 MR36V01G52B 64M–Word x 16–Bit or 128M–Word × 8–Bit Page Mode P2ROM FEATURES PIN CONFIGURATION TOP VIEW 64Mx16 or 128Mx8-bit electrically switchable configuration • Page size of 8-word x 16-Bit or 16-word x 8-Bit


    Original     		PDF FEDR36V01G52B-002-01 MR36V01G52B 64Mx16 128Mx8-bit 16-Bit 16-word 56-pin 56-P-1420-0 50-K-MC) 128M*8BIT

    1170D28

    Abstract: No abstract text available
    Text: FEDR26V01G54R-002-03 Issue Date: Oct. 01, 2008 MR26V01G54R 32M–Word x 32–Bit or 64M–Word × 16–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES 32Mx32 or 64Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit


    Original     		PDF FEDR26V01G54R-002-03 MR26V01G54R 32Mx32 64Mx16-bit 32-Bit 16-word 16-Bit 1170D28

    IS43TR16640A

    Abstract: No abstract text available
    Text: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A , IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM ADVANCED INFORMATION NOVEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •


    Original     		PDF IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A IS43/46TR81280AL 128MX8, 64MX16 cycles/64 cycles/32 switch-15GBLA1 IS46TR81280A IS43TR16640A

    49/SG564283FG8NWIL

    Abstract: No abstract text available
    Text: SG564283FG8NWUU June 16, 2008 Ordering Information Part Numbers Description Module Speed SG564283FG8NWDB 128Mx64 1GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 64Mx16 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0


    Original     		PDF SG564283FG8NWUU SG564283FG8NWDB 128Mx64 200-pin 64Mx16 DDR2-400-333, PC2-3200 SG564283FG8NWDG 49/SG564283FG8NWIL

    hynix nand 1G

    Abstract: hynix nand flash HY27 hynix nand hy27ua hynix 1g flash memory hynix nand spare area 48TSOP hynix nand flash memory
    Text: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary


    Original     		PDF HY27UA HY27SA 128Mx8bit 64Mx16bit) hynix nand 1G hynix nand flash HY27 hynix nand hy27ua hynix 1g flash memory hynix nand spare area 48TSOP hynix nand flash memory

    VCCQ15

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M16S-XSBX PRELIMINARY* 64Mx16 DDR SDRAM FEATURES BENEFITS „ DDR SDRAM rate = 200, 250, 266, 333* „ „ Package: „ • 60 Plastic Ball Grid Array PBGA , 10 x 12.5mm „ 1Gb upgrade to 512Mb 60 FBGA SDRAM „ 2.5V ±0.2V core power supply


    Original     		PDF 64Mx16 512Mb W3E64M16S-XSBX VCCQ15

    HY27US081G1M

    Abstract: hynix NAND ECC hynix nand spare area 48pin-TSOP1 HY27US161G1M hynix naming hynix nand reset nand flash HYNIX Hynix Nand flash code Hynix E NAND
    Text: Preliminary HY27US 08/16 1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27US081G1M HY27US161G1M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY27US 128Mx8bit 64Mx16bit) HY27US081G1M HY27US161G1M HY27US081G1M hynix NAND ECC hynix nand spare area 48pin-TSOP1 HY27US161G1M hynix naming hynix nand reset nand flash HYNIX Hynix Nand flash code Hynix E NAND

    NT1GT64UH8D0FN-AD

    Abstract: 64mx16 NT1GT64UH8D0FN-3C PC2-5300 64MX16 DDR2 PC2-6400
    Text: NT512T64UH4D0FN / NT1GT64UH8D0FN / NT2GT64U8HD0BN NT512T64UH4D0FS / NT1GT64UH8D0FS / NT2GT64U8HD0BS 512MB: 64M x 64 / 1GB: 128M x 64 / 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Based on DDR2-533/667/800 64Mx16 512MB /64Mx16 (1GB)/128Mx8 (2GB) SDRAM D-Die


    Original     		PDF NT512T64UH4D0FN NT1GT64UH8D0FN NT2GT64U8HD0BN NT512T64UH4D0FS NT1GT64UH8D0FS NT2GT64U8HD0BS 512MB: PC2-4200 PC2-5300 PC2-6400 NT1GT64UH8D0FN-AD 64mx16 NT1GT64UH8D0FN-3C 64MX16 DDR2 PC2-6400

    SODIMM DDR2 Mechanical Dimensions

    Abstract: PC2-6400 PC2-5300 SSTL-18 NT2GT64U8HC0BN
    Text: NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M x 64 / 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Preliminary Edition Based on DDR2-533/667/800 64Mx16 1GB /128Mx8 (2GB) SDRAM C-Die Features • Performance: PC2-4200 PC2-5300 PC2-6400


    Original     		PDF NT1GT64UH8C0FN NT2GT64U8HC0BN PC2-4200 PC2-5300 PC2-6400 DDR2-533/667/800 64Mx16 /128Mx8 PC2-4200 PC2-5300 SODIMM DDR2 Mechanical Dimensions PC2-6400 SSTL-18 NT2GT64U8HC0BN

    IS43TR16640A

    Abstract: IS43TR81280A DDR31866K 64MX16 bc 888
    Text: IS43/46TR16640A/AL, IS43/46TR81280A/AL 128Mx8, 64Mx16 1Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2011 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V         


    Original     		PDF IS43/46TR16640A/AL, IS43/46TR81280A/AL 128Mx8, 64Mx16 cycles/64 cycles/32 78-ball IS43TR16640A IS43TR81280A DDR31866K bc 888

    Untitled

    Abstract: No abstract text available
    Text: 172PIN DDR2 533 Micro-DIMM 1024MB With 64Mx16 CL4 TS1GPA1024U5 Description Placement The TS1GPA1024U5 is a 128M x 64bits DDR2-533 Micro-DIMM. The TS1GPA1024U5 consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on a 172-pin printed


    Original     		PDF 172PIN 1024MB 64Mx16 TS1GPA1024U5 TS1GPA1024U5 64bits DDR2-533 64Mx16bits 172-pin