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    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet August 28, 2012 www.aeroflex.com/memories FEATURES  20ns Read, 10ns Write maximum access times available  Functionally compatible with traditional 1M, 2M and 4M


    Original     		PDF UT8ER1M32 32Megabit UT8ER2M32 64Megabit UT8ER4M32 128Megabit UT8ER1M32: UT8ER2M32: UT8ER4M32: x10-16

    UT8MR8M8

    Abstract: No abstract text available
    Text: Standard Products UT8MR8M8P 64Megabit Non-Volatile MRAM Advanced Data Sheet May 14, 2012 www.aeroflex.com/memories FEATURES  Single 3.3-V power supply  Fast 50ns read/write access time  Functionally compatible with traditional asynchronous SRAMs  Equal address and chip-enable access times


    Original     		PDF 64Megabit 64-pin UT8MR8M8

    UT8MR8M8

    Abstract: aeroflex sram ecc
    Text: Standard Products UT8MR8M8P 64Megabit Non-Volatile MRAM Advanced Data Sheet March 15, 2012 FEATURES  Single 3.3-V power supply  Fast 50ns read/write access time  Functionally compatible with traditional asynchronous SRAMs  Equal address and chip-enable access times


    Original     		PDF 64Megabit 64-pin 097in UT8MR8M8 aeroflex sram ecc

    71WS256NC0BAIAU

    Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics


    Original     		PDF S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) 54MHz S71WS S71WS512/256Nx0 S71WS512Nx0/S71WS256Nx0 71WS256NC0BAIAU cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8MR8M8 64Megabit Non-Volatile MRAM Advanced Data Sheet August 6, 2012 www.aeroflex.com/memories FEATURES  Single 3.3-V power supply  Fast 50ns read/write access time  Functionally compatible with traditional asynchronous SRAMs


    Original     		PDF 64Megabit -40oC 105oC) 64-pin 125oC

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Data Sheet January, 2013 www.aeroflex.com/memories INTRODUCTION The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high performance CMOS static RAM multichip modules MCMs


    Original     		PDF UT8ER1M32 32Megabit UT8ER2M32 64Megabit UT8ER4M32 128Megabit UT8ER1M32, UT8ER2M32,

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8MR8M8 64Megabit Non-Volatile MRAM Advanced Data Sheet August 23, 2013 www.aeroflex.com/memories FEATURES  Single 3.3-V power supply  Fast 50ns read/write access time  Functionally compatible with traditional asynchronous SRAMs


    Original     		PDF 64Megabit -40oC 105oC)

    UT8ER4M32

    Abstract: SRAM edac UT8ER4M32M 20820h ut8er1m32m EN 10204 3.1 aeroflex sram edac UT8ER2M32
    Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet December 9, 2010 www.aeroflex.com/memories FEATURES ‰ 20ns Read, 10ns Write maximum access times available ‰ Functionally compatible with traditional 1M, 2M and 4M


    Original     		PDF UT8ER1M32 32Megabit UT8ER2M32 64Megabit UT8ER4M32 128Megabit UT8ER1M32: UT8ER2M32: UT8ER4M32: UT8ER1M32, SRAM edac UT8ER4M32M 20820h ut8er1m32m EN 10204 3.1 aeroflex sram edac

    SRAM edac

    Abstract: No abstract text available
    Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet June 8, 2011 www.aeroflex.com/memories INTRODUCTION The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high performance CMOS static RAM multichip modules MCMs


    Original     		PDF UT8ER1M32 32Megabit UT8ER2M32 64Megabit UT8ER4M32 128Megabit UT8ER1M32: UT8ER2M32: UT8ER4M32: 111MeV-cm2/mg SRAM edac

    aeroflex sram edac

    Abstract: SRAM edac
    Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet June 25, 2010 FEATURES ‰ 20ns Read, 10ns Write maximum access times available ‰ Functionally compatible with traditional 1M, 2M and 4M


    Original     		PDF UT8ER1M32 32Megabit UT8ER2M32 64Megabit UT8ER4M32 128Megabit UT8ER1M32: UT8ER2M32: UT8ER4M32: 111MeV-cm2/mg aeroflex sram edac SRAM edac

    Untitled

    Abstract: No abstract text available
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications


    Original     		PDF S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) S71WS-N-00 S71WS-N-00

    aeroflex sram edac

    Abstract: No abstract text available
    Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet December 16, 2009 FEATURES ‰ 20ns Read, 10ns Write maximum access times available ‰ Functionally compatible with traditional 1M, 2M and 4M


    Original     		PDF UT8ER1M32 32Megabit UT8ER2M32 64Megabit UT8ER4M32 128Megabit UT8ER1M32: UT8ER2M32: UT8ER4M32: 111MeV-cm2/mg aeroflex sram edac

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


    Original     		PDF 3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom

    UltraSPARC-IIIi

    Abstract: NVRAM for Sun UltraSparc IIi UltraSPARC-III STP2003QFP 4900 H02 gigabyte MOTHERBOARD CIRCUIT diagram A27 639 SME2411 SME1430LGA-360 SME1430LGA-440
    Text: SME1430LGA-360 SME1430LGA-440 SME1430LGA-480 May 1999 UltraSPARC -IIi CPU DATA SHEET Highly Integrated 64-Bit RISC; L2-Cache, DRAM, PCI Interfaces DESCRIPTION The SME1430LGA CPU UltraSPARC-IIi microprocessor is a highly-integrated, 64-bit, SPARC V9 superscalar


    Original     		PDF SME1430LGA-360 SME1430LGA-440 SME1430LGA-480 64-Bit SME1430LGA 64-bit, SME1040 SME2411) UltraSPARC-IIIi NVRAM for Sun UltraSparc IIi UltraSPARC-III STP2003QFP 4900 H02 gigabyte MOTHERBOARD CIRCUIT diagram A27 639 SME2411 SME1430LGA-360 SME1430LGA-440

    AT45DCB008D

    Abstract: atmel 952 date code AT45DB642D BA10 PA12 3542C
    Text: Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture • • • • • • • • • • • • • • – RapidS Serial Interface: 66 MHz Maximum Clock Frequency SPI Compatible Modes 0 and 3 – Rapid8™ 8-bit Interface: 50 MHz Maximum Clock Frequency


    Original     		PDF 3542C AT45DCB008D atmel 952 date code AT45DB642D BA10 PA12

    AT49BV6416

    Abstract: AT49BV6416C AT49BV6416CT
    Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


    Original     		PDF 64-megabit AT49BV6416 AT49BV6416C AT49BV6416CT

    AT45DCB008

    Abstract: atmel at45db642 AT45DB642 BA10 PA12
    Text: Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture • • • • • • • • • • – Dedicated Serial Interface SPI Modes 0 and 3 Compatible – Dedicated Parallel I/O Interface (Optional Use) Page Program Operation – Single Cycle Reprogram (Erase and Program)


    Original     		PDF 1056-byte 1638D 11/01/xM AT45DCB008 atmel at45db642 AT45DB642 BA10 PA12

    4kw marking

    Abstract: MBM29DL640E
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA-90/MB84VD23280EE-90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance


    Original     		PDF DS05-50211-2E MB84VD23280EA-90/MB84VD23280EE-90 101-ball 4kw marking MBM29DL640E

    Untitled

    Abstract: No abstract text available
    Text: Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture • • • • • • • • • • • • • • – RapidS Serial Interface: 66 MHz Maximum Clock Frequency SPI Compatible Modes 0 and 3 – Rapid8 8-bit Interface: 50 MHz Maximum Clock Frequency


    Original     		PDF 3542Kâ

    2481D

    Abstract: AT49BN6416T AT49BN6416 AT49BV6416 AT49BV6416T 78910
    Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz


    Original     		PDF 64-megabit 2481D AT49BN6416T AT49BN6416 AT49BV6416 AT49BV6416T 78910

    amd 15h power

    Abstract: AM29LV640
    Text: Implementing a Common Layout for AMD MirrorBitTM and Intel StrataFlashTM Memory Devices Application Note Overview This document describes the benefits of designing with AMD MirrorBit Flash memory and the ease with which system designers can layout a board to accommodate high-density flash devices from both AMD and


    Original     		PDF 32Mb-128Mb 64Megabit amd 15h power AM29LV640

    AT49SN3208

    Abstract: AT49SN3208T AT49SN6416 AT49SN6416T
    Text: Features • 64-megabit 4M x 16 and 32-megabit (2M x 16) Flash Memories • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • • • – Random Access Time – 90 ns – Synchronous Burst Frequency – 54 MHz – Page Mode Read Time – 20 ns


    Original     		PDF 64-megabit 32-megabit 12/01/xM AT49SN3208 AT49SN3208T AT49SN6416 AT49SN6416T

    Untitled

    Abstract: No abstract text available
    Text: E2G1059-18-74 O K I Semiconductor This version: Jul. 1998 MSM5716C50/M SM 5718C50/ M D5764802 16M/18Mb 2M x 8/9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 1 6 /1 8 /64-M egabit C oncurrent Ram bus DRAMs (RDRAM ) are extrem ely hi'ghVspeed CMOS DRAMs organized as 2M or 8 M w ords by 8 or 9 bits. They are capable of bursting- linlimi ted


    OCR Scan     		PDF E2G1059-18-74 16M/18Mb MSM5716C50/M 5718C50/ D5764802 /64-M

    TM248CBK32F

    Abstract: TM124BBK32 TM124BBK32F TM248CBK32 TM248CBK32U
    Text: T M 1 2 4 B B K 3 2 F , TM1 2 4 B B K 3 2 U 1 0 4 8 5 7 6 BY 32-BIT D Y N A M I C RAM M O D U L E T M2 4 8 C B K 3 2 F , T M 2 4 8 C B K 3 2 U 20971 52 BY 32-BIT D Y N A M I C RA M M O D U L E S M M S 649A - DECEMBER 1 9 9 4 - REVISED JUNE 1995 • O r ga ni z a t i on


    OCR Scan     		PDF 32-BIT 72-Pin 124BB TM248CBK32F TM124BBK32 TM124BBK32F TM248CBK32 TM248CBK32U