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    64K X 16 SRAM Search Results

    64K X 16 SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27LS07PC Rochester Electronics LLC 27LS07 - Standard SRAM, 16X4 Visit Rochester Electronics LLC Buy
    CY7C167A-35PC Rochester Electronics LLC CY7C167A - CMOS SRAM Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC HM3-6504 - Standard SRAM, 4KX1, 220ns, CMOS Visit Rochester Electronics LLC Buy
    HM4-6504B-9 Rochester Electronics LLC HM4-6504 - Standard SRAM, 4KX1, 220ns, CMOS Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC 2114A - 1K X 4 SRAM Visit Rochester Electronics LLC Buy

    64K X 16 SRAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A12L

    Abstract: A13L IDT707288 707288
    Text: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks


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    IDT707288S/L 16-bit 100-pin PN100-1) A12L A13L IDT707288 707288 PDF

    Untitled

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks


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    IDT707288S/L 16-bit 32-bit IDT707288 100-pin PN100-1) PDF

    Untitled

    Abstract: No abstract text available
    Text: DPS1037 Dense-Pac Microsystems, Inc. 64K X 16 CMOS SRAM MODULE O DESCRIPTION: The DPS1037 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM's, and decoupling capacitors surface mounted on a co-fired ceramic substrate having


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    DPS1037 DPS1037 64Kx1 30A04M PDF

    A13L

    Abstract: IDT707288 R3592
    Text: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks


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    IDT707288S/L 16-bit IDT707288 100-pin PN100-1) A13L IDT707288 R3592 PDF

    Untitled

    Abstract: No abstract text available
    Text: I * / Integrated Device Technology, Inc. HIGH-SPEED 64K X 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks


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    IDT707288S/L 16-bit IDT707288 IDT707288S/L 100-pin PN100-1) PDF

    A13L

    Abstract: IDT70V7288
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. ADVANCED IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks


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    IDT70V7288S/L 16-bit IDT70V7288 100-pin PN100-1) 70V7288 A13L IDT70V7288 PDF

    ci 4077

    Abstract: A12L A13L IDT70V7288
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks


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    IDT70V7288S/L 16-bit 100-pin PN100-1) 70V7288 ci 4077 A12L A13L IDT70V7288 PDF

    A12L

    Abstract: A13L IDT70V7288 4077 cmos
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks


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    IDT70V7288S/L 16-bit x1670V7288S/L 100-pin PN100-1) 70V7288 A12L A13L IDT70V7288 4077 cmos PDF

    CY14B101LA-SZ45XI

    Abstract: CY14B101LA-SZ25XI
    Text: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small


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    CY14B101LA CY14B101NA 8/64K CY14B101LA/CY14B101NA CY14B101LA-SZ45XI CY14B101LA-SZ25XI PDF

    Untitled

    Abstract: No abstract text available
    Text: DPS64X16P □ Dense-Pac Microsystems, Inc. 0_ 64K X 16 CMOS CM SRAM MODULE PRELIMINARY DESCRIPTION: The DPS64X16P is a 64K X 16 high-speed, low-power static RAM module comprised of four 64K X 4 monolithic SRAM's, and decoupling capacitors surface mounted on a FR-4 substrate.


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    DPS64X16P DPS64X16P 220mW 30A057-00 S64X16P PDF

    Untitled

    Abstract: No abstract text available
    Text: CY14V101LA CY14V101NA PRELIMINARY 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14V101LA) or 64K x 16 (CY14V101NA) ■ Hands Off Automatic STORE on Power Down with only a small


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    CY14V101LA CY14V101NA 8/64K CY14V101LA/CY14V101NA PDF

    IN 4077

    Abstract: IC 4077 910UB
    Text: \dt Integrated Device Technology, Inc. HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks


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    IDT70V7288S/L 16-bit IDT70V7288 IDT70V7288S/L 100-pin PN100-1) 70V7288 IN 4077 IC 4077 910UB PDF

    marking cea

    Abstract: A15A A15B
    Text: GALVANTECH, INC. GVT73128S16 REVOLUTIONARY PINOUT 64K X 16 X 2 ASYNCHRONOUS SRAM 64K x 16 x 2 SRAM +3.3V SUPPLY, TWO CHIP ENABLES REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT73128S16 is organized as a 65,536 x 16 x 2


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    GVT73128S16 GVT73128S16 44-Pin 73128S16 marking cea A15A A15B PDF

    A13L

    Abstract: IDT707288
    Text: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. ADVANCED IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks - 1 Megabit of memory on chip


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    IDT707288S/L 16-bit 100-pin PN100-1) 108-pin G108-1) A13L IDT707288 PDF

    marking BHe

    Abstract: GVT7364A16
    Text: GALVANTECH, INC. GVT7364A16 REVOLUTIONARY PINOUT 64K X 16 ASYNCHRONOUS SRAM 64K x 16 SRAM +3.3V SUPPLY, SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • The GVT7364A16 is organized as a 65,536 x 16 SRAM


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    GVT7364A16 GVT7364A16 7364A16 marking BHe PDF

    A12L

    Abstract: No abstract text available
    Text: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH SEMAPHORE CONTROLS Integrated Device Technology, Inc. ADVANCED IDT70728S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Eight independent 8K x 16 banks - 1 Megabit of memory on chip


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    IDT70728S/L IDT70728 100-pin PN100-1) A12L PDF

    Untitled

    Abstract: No abstract text available
    Text: Integrated D e v ile Technology, li e . HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks


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    IDT70V7288S/L 16-bit 100-pin PN100-1) 70V7288 PDF

    A12L

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH SEMAPHORE CONTROLS Integrated Device Technology, Inc. ADVANCED IDT70V728S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Eight independent 8K x 16 banks - 1 Megabit of memory on chip


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    IDT70V728S/L IDT70V728 100-pin PN100-1) 70V728 A12L PDF

    ba2l

    Abstract: 1M x 16 SRAM 4-bit register with truth table A12L 1 bit register truth table
    Text: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH SEMAPHORE CONTROLS Integrated Device Technology, Inc. ADVANCED IDT70728S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Eight independent 8K x 16 banks - 1 Megabit of memory on chip


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    IDT70728S/L IDT70728 100-pin PN100-1) 108-pin G108-1) ba2l 1M x 16 SRAM 4-bit register with truth table A12L 1 bit register truth table PDF

    "Dual-Port RAM" for video applications

    Abstract: "32K x 16" dual port SRAM sram with address counter 3.3v counter
    Text: AL5DS9xx9V 3.3V Synchronous Dual-Port SRAM 4K/8K/16K/32K/64K/128K x 8/9/16/18-bit Features True dual ported memory cells 17 Flow-Through/Pipelined devices: - 4K/8K/16K/32K/64K x 18-bit organization AL5DS9349V/59V/69V/79V/89V - 16K/32K/64K x 16-bit organization (AL5DS9269V/79V/89V)


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    4K/8K/16K/32K/64K/128K 8/9/16/18-bit 4K/8K/16K/32K/64K 18-bit AL5DS9349V/59V/69V/79V/89V) 16K/32K/64K 16-bit AL5DS9269V/79V/89V) 8K/16K/32K/64K/128K AL5DS9159V/69V/79V/89V/99V) "Dual-Port RAM" for video applications "32K x 16" dual port SRAM sram with address counter 3.3v counter PDF

    low power sram 64k

    Abstract: 9l reset 1517R
    Text: AL5DS9xx9V 3.3V Synchronous Dual-Port SRAM 4K/8K/16K/32K/64K/128K x 8/9/16/18-bit Features ! True dual ported memory cells ! 18 Flow-Through/Pipelined devices: - 4K/8K/16K/32K/64K x 18-bit organization AL5DS9349V/59V/69V/79V/89V - 16K/32K/64K x 16-bit organization (AL5DS9269V/79V/89V)


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    4K/8K/16K/32K/64K/128K 8/9/16/18-bit 4K/8K/16K/32K/64K 18-bit AL5DS9349V/59V/69V/79V/89V) 16K/32K/64K 16-bit AL5DS9269V/79V/89V) AL5DS9149V/59V/69V/79V/89V/99V) low power sram 64k 9l reset 1517R PDF

    AWB065

    Abstract: seiko epson RAM IC MEMORY CARD "40 pin" 32k sram card 20 pin battery
    Text: JEIDA Ver. 4 STATIC RAM VARIATION Part Number Memory Size AWB065SD*0 AWB129SD*0 AWB257SD*0 AWB513SD*0 AWB101SD*0 AWB201SD*0 64K Bytes 128K Bytes 256K Bytes 512K Bytes 1M Bytes 2M Bytes Description 32K X 16 64K X 16 128K X 16 256K X 16 512K X 16 1M X 16 bits


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    AWB065SD AWB129SD AWB257SD AWB513SD AWB101SD AWB201SD AWB065, AWB129, AWB257, AWB513, AWB065 seiko epson RAM IC MEMORY CARD "40 pin" 32k sram card 20 pin battery PDF

    68w smd

    Abstract: CYM1621
    Text: CYM1621 CYPRESS SEMICONDUCTOR 64K x 16 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module The CYM1621 is a high-performance 1-megabit static RAM module organized as 64K words by 16 bits. This module is constructed from sixteen 64K x 1 SRAMs


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    CYM1621 CYM1621 CYM1621HD-20C CYM1621LHD-20C CYM1621HD-25C CYM1621LHD-25C 1621HD-25MB 1621LHD-25MB CYM1621HD-30C CYM1621LHD-30C 68w smd PDF

    GVT7364A16

    Abstract: No abstract text available
    Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT7364A16 REVOLUTIONARY PINOUT 64K X 16 64K x 16 SRAM +3.3V SUPPLY, SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT7364A16 is organized as a 65,536 x 16 SRAM


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    GVT7364A16 GVT7364A16 7364A16 PDF