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    64K X 16 SRAM Search Results

    64K X 16 SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    71T016S12PH18 Renesas Electronics Corporation 2.5V 64K X 16 SRAM Visit Renesas Electronics Corporation
    71T016SA10PH8 Renesas Electronics Corporation 2.5V 64K X 16 SRAM Visit Renesas Electronics Corporation
    71T016SA12BFG8 Renesas Electronics Corporation 2.5V 64K X 16 SRAM Visit Renesas Electronics Corporation
    71T016SA12PH8/2984 Renesas Electronics Corporation 2.5V 64K X 16 SRAM Visit Renesas Electronics Corporation
    71T016SA12YI8 Renesas Electronics Corporation 2.5V 64K X 16 SRAM Visit Renesas Electronics Corporation

    64K X 16 SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A12L

    Abstract: A13L IDT707288 707288
    Text: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks


    Original     		PDF IDT707288S/L 16-bit 100-pin PN100-1) A12L A13L IDT707288 707288

    A13L

    Abstract: IDT707288 R3592
    Text: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks


    Original     		PDF IDT707288S/L 16-bit IDT707288 100-pin PN100-1) A13L IDT707288 R3592

    A13L

    Abstract: IDT70V7288
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. ADVANCED IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks


    Original     		PDF IDT70V7288S/L 16-bit IDT70V7288 100-pin PN100-1) 70V7288 A13L IDT70V7288

    ci 4077

    Abstract: A12L A13L IDT70V7288
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks


    Original     		PDF IDT70V7288S/L 16-bit 100-pin PN100-1) 70V7288 ci 4077 A12L A13L IDT70V7288

    A12L

    Abstract: A13L IDT70V7288 4077 cmos
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks


    Original     		PDF IDT70V7288S/L 16-bit x1670V7288S/L 100-pin PN100-1) 70V7288 A12L A13L IDT70V7288 4077 cmos

    CY14B101LA-SZ45XI

    Abstract: CY14B101LA-SZ25XI
    Text: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small


    Original     		PDF CY14B101LA CY14B101NA 8/64K CY14B101LA/CY14B101NA CY14B101LA-SZ45XI CY14B101LA-SZ25XI

    Untitled

    Abstract: No abstract text available
    Text: CY14V101LA CY14V101NA PRELIMINARY 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14V101LA) or 64K x 16 (CY14V101NA) ■ Hands Off Automatic STORE on Power Down with only a small


    Original     		PDF CY14V101LA CY14V101NA 8/64K CY14V101LA/CY14V101NA

    marking cea

    Abstract: A15A A15B
    Text: GALVANTECH, INC. GVT73128S16 REVOLUTIONARY PINOUT 64K X 16 X 2 ASYNCHRONOUS SRAM 64K x 16 x 2 SRAM +3.3V SUPPLY, TWO CHIP ENABLES REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT73128S16 is organized as a 65,536 x 16 x 2


    Original     		PDF GVT73128S16 GVT73128S16 44-Pin 73128S16 marking cea A15A A15B

    A13L

    Abstract: IDT707288
    Text: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. ADVANCED IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks - 1 Megabit of memory on chip


    Original     		PDF IDT707288S/L 16-bit 100-pin PN100-1) 108-pin G108-1) A13L IDT707288

    marking BHe

    Abstract: GVT7364A16
    Text: GALVANTECH, INC. GVT7364A16 REVOLUTIONARY PINOUT 64K X 16 ASYNCHRONOUS SRAM 64K x 16 SRAM +3.3V SUPPLY, SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • The GVT7364A16 is organized as a 65,536 x 16 SRAM


    Original     		PDF GVT7364A16 GVT7364A16 7364A16 marking BHe

    A12L

    Abstract: No abstract text available
    Text: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH SEMAPHORE CONTROLS Integrated Device Technology, Inc. ADVANCED IDT70728S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Eight independent 8K x 16 banks - 1 Megabit of memory on chip


    Original     		PDF IDT70728S/L IDT70728 100-pin PN100-1) A12L

    A12L

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH SEMAPHORE CONTROLS Integrated Device Technology, Inc. ADVANCED IDT70V728S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Eight independent 8K x 16 banks - 1 Megabit of memory on chip


    Original     		PDF IDT70V728S/L IDT70V728 100-pin PN100-1) 70V728 A12L

    ba2l

    Abstract: 1M x 16 SRAM 4-bit register with truth table A12L 1 bit register truth table
    Text: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH SEMAPHORE CONTROLS Integrated Device Technology, Inc. ADVANCED IDT70728S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Eight independent 8K x 16 banks - 1 Megabit of memory on chip


    Original     		PDF IDT70728S/L IDT70728 100-pin PN100-1) 108-pin G108-1) ba2l 1M x 16 SRAM 4-bit register with truth table A12L 1 bit register truth table

    "Dual-Port RAM" for video applications

    Abstract: "32K x 16" dual port SRAM sram with address counter 3.3v counter
    Text: AL5DS9xx9V 3.3V Synchronous Dual-Port SRAM 4K/8K/16K/32K/64K/128K x 8/9/16/18-bit Features True dual ported memory cells 17 Flow-Through/Pipelined devices: - 4K/8K/16K/32K/64K x 18-bit organization AL5DS9349V/59V/69V/79V/89V - 16K/32K/64K x 16-bit organization (AL5DS9269V/79V/89V)


    Original     		PDF 4K/8K/16K/32K/64K/128K 8/9/16/18-bit 4K/8K/16K/32K/64K 18-bit AL5DS9349V/59V/69V/79V/89V) 16K/32K/64K 16-bit AL5DS9269V/79V/89V) 8K/16K/32K/64K/128K AL5DS9159V/69V/79V/89V/99V) "Dual-Port RAM" for video applications "32K x 16" dual port SRAM sram with address counter 3.3v counter

    GVT7364A16

    Abstract: No abstract text available
    Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT7364A16 REVOLUTIONARY PINOUT 64K X 16 64K x 16 SRAM +3.3V SUPPLY, SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT7364A16 is organized as a 65,536 x 16 SRAM


    Original     		PDF GVT7364A16 GVT7364A16 7364A16

    Untitled

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks


    OCR Scan     		PDF IDT707288S/L 16-bit 32-bit IDT707288 100-pin PN100-1)

    Untitled

    Abstract: No abstract text available
    Text: DPS1037 Dense-Pac Microsystems, Inc. 64K X 16 CMOS SRAM MODULE O DESCRIPTION: The DPS1037 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM's, and decoupling capacitors surface mounted on a co-fired ceramic substrate having


    OCR Scan     		PDF DPS1037 DPS1037 64Kx1 30A04M

    Untitled

    Abstract: No abstract text available
    Text: I * / Integrated Device Technology, Inc. HIGH-SPEED 64K X 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks


    OCR Scan     		PDF IDT707288S/L 16-bit IDT707288 IDT707288S/L 100-pin PN100-1)

    Untitled

    Abstract: No abstract text available
    Text: DPS64X16P □ Dense-Pac Microsystems, Inc. 0_ 64K X 16 CMOS CM SRAM MODULE PRELIMINARY DESCRIPTION: The DPS64X16P is a 64K X 16 high-speed, low-power static RAM module comprised of four 64K X 4 monolithic SRAM's, and decoupling capacitors surface mounted on a FR-4 substrate.


    OCR Scan     		PDF DPS64X16P DPS64X16P 220mW 30A057-00 S64X16P

    IN 4077

    Abstract: IC 4077 910UB
    Text: \dt Integrated Device Technology, Inc. HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks


    OCR Scan     		PDF IDT70V7288S/L 16-bit IDT70V7288 IDT70V7288S/L 100-pin PN100-1) 70V7288 IN 4077 IC 4077 910UB

    Untitled

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH SEMAPHORE CONTROLS ADVANCED 1DT70728S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRA Architecture - Eight independent 8K x 16 banks -1 Megabit of memory on chip


    OCR Scan     		PDF 1DT70728S/L 16-bit IDT70728S/L 100-pin PN100-1 M625771

    Untitled

    Abstract: No abstract text available
    Text: Integrated D e v ile Technology, li e . HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks


    OCR Scan     		PDF IDT70V7288S/L 16-bit 100-pin PN100-1) 70V7288

    AWB065

    Abstract: seiko epson RAM IC MEMORY CARD "40 pin" 32k sram card 20 pin battery
    Text: JEIDA Ver. 4 STATIC RAM VARIATION Part Number Memory Size AWB065SD*0 AWB129SD*0 AWB257SD*0 AWB513SD*0 AWB101SD*0 AWB201SD*0 64K Bytes 128K Bytes 256K Bytes 512K Bytes 1M Bytes 2M Bytes Description 32K X 16 64K X 16 128K X 16 256K X 16 512K X 16 1M X 16 bits


    OCR Scan     		PDF AWB065SD AWB129SD AWB257SD AWB513SD AWB101SD AWB201SD AWB065, AWB129, AWB257, AWB513, AWB065 seiko epson RAM IC MEMORY CARD "40 pin" 32k sram card 20 pin battery

    68w smd

    Abstract: CYM1621
    Text: CYM1621 CYPRESS SEMICONDUCTOR 64K x 16 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module The CYM1621 is a high-performance 1-megabit static RAM module organized as 64K words by 16 bits. This module is constructed from sixteen 64K x 1 SRAMs


    OCR Scan     		PDF CYM1621 CYM1621 CYM1621HD-20C CYM1621LHD-20C CYM1621HD-25C CYM1621LHD-25C 1621HD-25MB 1621LHD-25MB CYM1621HD-30C CYM1621LHD-30C 68w smd