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    64K*1 DRAM Search Results

    64K*1 DRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    MC27C64-20 Rochester Electronics LLC 27C64 - 64K (8K x 8) EPROM Visit Rochester Electronics LLC Buy

    64K*1 DRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A101

    Abstract: CY7C1333F CY7C1333F-100AC
    Text: CY7C1333F 2-Mbit 64K x 32 Flow-through SRAM with NoBL Architecture Functional Description[1] Features • Can support up to 117-MHz bus operations with zero wait states. Data is transferred on every clock. The CY7C1333F is a 3.3V, 64K x 32 Synchronous


    Original     		PDF CY7C1333F 117-MHz CY7C1333F A101 CY7C1333F-100AC

    A101

    Abstract: CY7C1333F CY7C1333F-100AC 20306
    Text: CY7C1333F 2-Mbit 64K x 32 Flow-through SRAM with NoBL Architecture Functional Description[1] Features • Can support up to 117-MHz bus operations with zero wait states. Data is transferred on every clock. The CY7C1333F is a 3.3V, 64K x 32 Synchronous


    Original     		PDF CY7C1333F 117-MHz CY7C1333F A101 CY7C1333F-100AC 20306

    20306

    Abstract: No abstract text available
    Text: CY7C1333F 2-Mbit 64K x 32 Flow-through SRAM with NoBL Architecture Functional Description[1] Features • Can support up to 117-MHz bus operations with zero wait states. Data is transferred on every clock. The CY7C1333F is a 3.3V, 64K x 32 Synchronous


    Original     		PDF CY7C1333F 117-MHz 100-MHz CY7C1333F 20306

    Untitled

    Abstract: No abstract text available
    Text: CY7C1333F 2-Mbit 64K x 32 Flow-through SRAM with NoBL Architecture Functional Description[1] Features • Can support up to 117-MHz bus operations with zero wait states. Data is transferred on every clock. The CY7C1333F is a 3.3V, 64K x 32 Synchronous


    Original     		PDF CY7C1333F 117-MHz 100-MHz CY7C1333F

    20306

    Abstract: No abstract text available
    Text: CY7C1333F 2-Mb 64K x 32 Flow-through SRAM with NoBL Architecture Functional Description[1] Features • Can support up to 117-MHz bus operations with zero wait states.Data is transferred on every clock. The CY7C1333F is a 3.3V, 64K x 32 Synchronous Flow-through Burst SRAM designed specifically to support


    Original     		PDF CY7C1333F 117-MHz 100-MHz CY7C1333F 20306

    Untitled

    Abstract: No abstract text available
    Text: CY7C1333H PRELIMINARY 2-Mbit 64K x 32 Flow-Through SRAM with NoBL Architecture Features • Low standby power Functional Description[1] • Can support up to 133-MHz bus operations with zero wait states. The CY7C1333H is a 3.3V, 64K x 32 Synchronous Flow-through Burst SRAM designed specifically to support


    Original     		PDF CY7C1333H 133-MHz CY7C1333H

    Switching regulator, Pin 5, Clock

    Abstract: No abstract text available
    Text: CY7C1333H PRELIMINARY 2-Mbit 64K x 32 Flow-Through SRAM with NoBL Architecture Features • Low standby power Functional Description[1] • Can support up to 133-MHz bus operations with zero wait states. The CY7C1333H is a 3.3V, 64K x 32 Synchronous Flow-through Burst SRAM designed specifically to support


    Original     		PDF CY7C1333H 133-MHz CY7C1333H Switching regulator, Pin 5, Clock

    am9064

    Abstract: cvp 45 Am90C644
    Text: Am90C644 64K X 4 CMOS DUAL-ARRAY MEMORY ADVANCE INFORMATION 64K x 4 organization High-speed access: tpAC - 1 00 ns Write-per-Bit mask allows separatewrite controls for each of the four DRAM input bits On-chip video shifter with up to 100Megapixel/sec. bandwidth


    OCR Scan     		PDF Am90C644 100Megapixel/sec. 144-bit WF010 WF000372 am9064 cvp 45

    4264 dram

    Abstract: No abstract text available
    Text: MICRON T E C H N O L O G Y INC 55E D • blllS4'ì DDDSb?^ 153 ■ MRN PRELIMINARY W1T4C4264 883C 64K X 1 DRAM | W |! C R Q N MILITARY DRAM 64K X 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883, Class B


    OCR Scan     		PDF W1T4C4264 MIL-STD-883, 16-Pin 150mW 256-cycle MT4C4264 4264 dram

    Untitled

    Abstract: No abstract text available
    Text: MT4C1670/1 L 64K X 16 DRAM |U |IC =R O N 64K x 16 DRAM STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry standard x l6 pinouts, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process


    OCR Scan     		PDF MT4C1670/1 MT4C1670 MT4C1671

    Untitled

    Abstract: No abstract text available
    Text: ADAPTEC INC y •: MME D ■ B OElMMlb GQG203D & D A A C ¿ m $ L - i .j " .'T 'S L ^ k '5 Ç\C\ A IP -Æ 1 r 1 1O U I U U Single-Chip PC/AT Mass Storage Controller DATA BUFFER SRAM 64K MAX DRAM 64K MAX 8 MB/sec 3,5/2,5 INCH HARD DISK t AT BUS DATA SEPARATOR


    OCR Scan     		PDF GQG203D AIC-6160 16-byte AIC-010 32-bit 48-bit 16-bit

    4264 dram

    Abstract: No abstract text available
    Text: AUSTI N S E M I C O N D U C T O R INC bOE D I D O E l l ? G G G G 1 1 4 7Ü4 H A U S T K K tL IM IN A K Y MT4C4264 883C 64K X 1 DRAM |U|IC=RON MILITARY DRAM 64K X 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883, Class B


    OCR Scan     		PDF MT4C4264 MIL-STD-883, 16-Pin 150mW 256-cycle 4264 dram

    n6480

    Abstract: 347I
    Text: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT707288S/L Features * * * * * 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks * - 1 M egabit o f mem ory on chip * Fast asynchronous address-to-data access time: 15ns


    OCR Scan     		PDF IDT707288S/L 16Kxl6 16-bit 100-pin MO-136, i-M74 S10-U9-2070 PSC-4036 n6480 347I

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT707288S/L F e a tu re s * * * * * 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks * - 1 M egabit o f mem ory on chip * Fast asynchronous address-to-data access time: 15ns


    OCR Scan     		PDF IDT707288S/L 16-bit 492-M

    3771 8 pin ic

    Abstract: 3771 ic 8 pin 8 pin ic 3771 3771 1A7A1 3771- IC
    Text: LOW POWER 3V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71V016L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V016L is a 1,048,576-bit very low-pow er Static RAM organized as 64K x 16. It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,


    OCR Scan     		PDF 16-BIT) IDT71V016L 100ns 44-pin 576-bit 71V016 400-mil 3771 8 pin ic 3771 ic 8 pin 8 pin ic 3771 3771 1A7A1 3771- IC

    3771

    Abstract: 3771 ic 8 pin
    Text: LOW POWER 3V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71V016L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V016L is a 1,048,576-bit very low-pow er Static RAM organized as 64K x 16. It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,


    OCR Scan     		PDF 16-BIT) IDT71V016L 100ns 44-pin T71V016L 576-bit 9S054 3771 3771 ic 8 pin

    7481 memory ics

    Abstract: oti-037
    Text: OAK TECHNOLOGY INC. OTI-037 SYSTEM BLOCK DIAGRAM REFRESH SIR SIW SMR OTI-037 -RASO -CAS -W E -O E -IO W R -RAS -CAS -W E -O E BUS INTERFACE PLANEO 64K BYTE MD0-MD7 DATA ADDRESS I MDO-MD7 ASEL SA8-SA16 -RAS -CAS WE -O E PLANE 1 64K BYTE RAS -CAS -W E -O E PLANE 2


    OCR Scan     		PDF OTI-037 SA8-SA16 MD8-MD15 SA0-SA19 MD16-MD23 MD24-MD31 7481 memory ics oti-037

    58AZ

    Abstract: No abstract text available
    Text: Am29368 Advanced Micro Devices 1 Megabit Dynamic Memory Controller/Driver DMC DISTINCTIVE CHARACTERISTICS Provides control for 16K, 64K, and 256K and 1-megabit dynamic RAMs Outputs directly drive up to 88 DRAMs. with a guaran­ teed worst-case limit on the undershoot


    OCR Scan     		PDF Am29368 Am2968A 32-bit QP002600 58AZ

    78D015

    Abstract: No abstract text available
    Text: MT4C1670/1 64K X 16 DRAM | V | IC = R O N DRAM 64K x 16DRAM STATIC COLUMN MODE FEATURES PIN ASSIGNMENT Top View • Ind u stry sta n d a rd x l 6 p in o u ts, tim ing , fu n ctio n s and p ackages • • • • • • H ig h -p erfo rm an ce, C M O S silico n -g a te p ro cess


    OCR Scan     		PDF MT4C1670/1 16DRAM 40-Pin OE1992, 78D015

    AM29368

    Abstract: CGX068
    Text: Am29368 Advanced Micro Devices 1 Megabit Dynamic Memory Controller/Driver DMC DISTINCTIVE CHARACTERISTICS Provides control for 16K, 64K, and 256K and 1-megabit dynamic RAMs Outputs directly drive up to 8 8 DRAMs, with a guaran­ teed worst-case limit on the undershoot


    OCR Scan     		PDF Am29368 Am2968A 32-bit OP002600 CGX068

    6164 ram memory

    Abstract: No abstract text available
    Text: a Am29368 Advanced Micro Devices 1 Megabit Dynamic Memory Controller/Driver DMC DISTINCTIVE CHARACTERISTICS Provides control for 16K, 64K, and 256K and 1-megabit dynamic RAMs Outputs directly drive up to 8 8 DRAMs, with a guaran­ teed worst-case limit on the undershoot


    OCR Scan     		PDF Am29368 Am2968A 32-bit QP002600 6164 ram memory

    Untitled

    Abstract: No abstract text available
    Text: J MN1020019 / 0219 / 0419 / 0819 MN1020019 / 0219 / 0419 / 0819 1 Type 1 ROM x8-bit/x16-bit External / 1 6K / 32K / 64K (External Memory Expandable) 1 RAM (x8-bit/x16-bit) 3K / 1 K / 2K / 3K (External Memory Expandable) I Minimum Instruction Execution Time


    OCR Scan     		PDF MN1020019 x8-bit/x16-bit) 100ns 20MHz) 200ns 10MHz)

    Untitled

    Abstract: No abstract text available
    Text: 8-Bit Dynamic-RAM Driver with Three-state Outputs SN54/74S700/-1 SN54/74S731/-1 SN54/74S730/-1 SN54/74S734/-1 Ordering Information Features/ Benefits: • Provides MOS voltage levels lo r 16K and 64K DRAMs PART NUMBER PKG TEMP ENABLE POLARITY POWER • Undershoot of low-going output is less than -0 .5 V


    OCR Scan     		PDF SN54/74S700/-1 SN54/74S731/-1 SN54/74S730/-1 SN54/74S734/-1 SN54S700/-1 SN74S700/-1 SN54S730/-1 20-pin S730/734 Am2965/66

    Untitled

    Abstract: No abstract text available
    Text: LOW POWER 2V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71T016 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 64K x 16 Organization • Wide Operating Voltage Range: 1.8 to 2.7V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)


    OCR Scan     		PDF 16-BIT) IDT71T016 150ns, 200ns 10jxA 44-pin 46-BALL IDT71T016 576-bit 10-338-207Q