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    Abstract: No abstract text available
    Text: TOSHIBA TOLD9441 MD TO SHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~70°C Pin Connection 10 0 3 V/ LD ^ (5Ì) PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE


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    OLD9441 650nm 646nm 500MHz) 10kHz, PDF

    laser diode toshiba

    Abstract: 650nm 5mw 5v laser 2 Wavelength Laser Diode 650NM laser diode 5mw laser diode toshiba 650 TOLD9441MC
    Text: TOLD9441 MC TO SH IBA TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MC Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 LD 0 0 3 PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE


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    OLD9441 650nm laser diode toshiba 650nm 5mw 5v laser 2 Wavelength Laser Diode 650NM laser diode 5mw laser diode toshiba 650 TOLD9441MC PDF

    DAiode

    Abstract: 650nm 50mw
    Text: TO SHIBA TOLD9441 M C TO SHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MC Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~70°C Pin Connection 10 LD 0 3 V/ 0Ì) PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE


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    OLD9441 650nm 646nm OLD9441MC 500MHz) 10kHz, DAiode 650nm 50mw PDF

    laser diode toshiba

    Abstract: 2 Wavelength Laser Diode 650NM laser diode 5mw DAiode laser diode toshiba 650
    Text: TOLD9441 MD TO SH IBA TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 LD 0 0 3 @ PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE


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    OLD9441 650nm laser diode toshiba 2 Wavelength Laser Diode 650NM laser diode 5mw DAiode laser diode toshiba 650 PDF