bc736
Abstract: transistor C 639 W bc639 BC635 BC637
Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
bc736
transistor C 639 W
bc639
BC635
BC637
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bc736
Abstract: bc635 BC637 BC639
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC635/637/639
BC636/638/640
BC635
BC637
BC639
bc736
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BC639
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NPN transistor ECB TO-92
Abstract: Bc637 BC635 ECB transistor C 639 W transistor BC637 complement
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC635/637/639
BC636/638/640
BC635
BC637
BC639
NPN transistor ECB TO-92
Bc637
BC635 ECB
transistor C 639 W
transistor BC637 complement
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bc639
Abstract: 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC635/637/639
BC636/638/640
BC635
BC637
BC639
2bc639
fairchild date code
transistor BC637 complement
applications of Transistor BC639
bc639 fairchild
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transistor C 639 W
Abstract: No abstract text available
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC635/637/639
BC636/638/640
BC635
BC637
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transistor C 639 W
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bc635
Abstract: transistor C 639 W
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC635/637/639
BC636/638/640
BC635
BC637
BC639
bc635
transistor C 639 W
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BC635
Abstract: bc639 BC637
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC635/637/639
BC636/638/640
BC635
BC637
BC639
BC635
bc639
BC637
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Untitled
Abstract: No abstract text available
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC635/637/639
BC636/638/640
BC635
BC637
BC639
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bc736
Abstract: BC635 BC637 BC639
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC635/637/639
BC636/638/640
BC635
BC637
BC639
bc736
BC635
BC637
BC639
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Untitled
Abstract: No abstract text available
Text: BC639/640 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)1.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.
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BC639/640
StyleTO-92
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OSC-2.0SM
Abstract: ASI10639
Text: OSC-2.0SM NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 2L FLG The ASI OSC-2.0SM is a high performance silicon transistor designed for high power oscillator applications to 3.0 GHz with typical RF power of 2.0W A ØD B .060 x 45° CHAMFER
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications
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MJE13009-K
MJE13009-K
QW-R223-007
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MJE13009
Abstract: 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such
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MJE13009
MJE13009
QW-R203-024
2N2222 transistor output curve
mje13009l
mje13009 CIRCUIT
2N2222 SOA
MJE13009G
tr 2n2222
MJE13009L-TF3-T
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications
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MJE13009-P
MJE13009-P
QW-R223-008,
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D1616A
Abstract: utc d1616a d1616 transistor d1616a TRANSISTOR D1616 npn switching transistor Ic 100mA D1616A g TRANSISTOR pc 135 audio output TRANSISTOR NPN
Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150
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2SD1616/A
OT-89
D1616
D1616A
width10ms,
100mA
100mA
utc d1616a
transistor d1616a
TRANSISTOR D1616
npn switching transistor Ic 100mA
D1616A g
TRANSISTOR pc 135
audio output TRANSISTOR NPN
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Untitled
Abstract: No abstract text available
Text: UTC MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 2 1 MARKING 3 16 MMBT1616 SOT-23 16A MMBT1616A 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS SYMBOL
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MMBT1616/A
MMBT1616
OT-23
MMBT1616A
QW-R206-036
100mA
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transistor CR NPN
Abstract: 640 TRANSISTOR NPN CHIP TRANSISTOR mje15030 transistor transistor cr CP245
Text: PROCESS CP245 Central Power Transistor TM Semiconductor Corp. NPN, 8.0A Power Transistor Chip PROCESS DETAILS Process MULTIEPITAXIAL MESA Die Size 120 x 145 MILS Die Thickness 13 MILS Base Bonding Pad Area 20 x 45 MILS Emitter Bonding Pad Area 14 x 70 MILS
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CP245
MJE15030
transistor CR NPN
640 TRANSISTOR NPN
CHIP TRANSISTOR
mje15030
transistor
transistor cr
CP245
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640 TRANSISTOR NPN
Abstract: PJD1616CCT PJD1616CCX ic 2002
Text: PJD1616C NPN Epitaxial Silicon Transistor AUDIO FREQ UENCY PO WER AMPLIFIER • TO-92 MEDIUM SPEED SWITCHING SOT-23 ABSOLUTE MAXIMUM RATINGS Ta = 25℃ Characteristic Collector-base Voltage Collector-Emitter Voltage Emitter-base Voltage Collector Current (DC)
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PJD1616C
OT-23
PJD1616CCT
PJD1616CCX
PW10mse
PW350s,
640 TRANSISTOR NPN
PJD1616CCT
PJD1616CCX
ic 2002
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BC639 collector
Abstract: BC635 transistor 639 bc639 640 TRANSISTOR NPN transistor BC637 complement BC637
Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25t; Characteristic Collector Emitter Voltage at R a E = 1K ohm Collector Emitter Voltage Collector Emitter Voltage
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
BC639 collector
transistor 639
640 TRANSISTOR NPN
transistor BC637 complement
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BC635 TRANSISTOR E C B
Abstract: transistor C 639 W
Text: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector Emitter Voltage at Rbe=1 Kohm Collector Emitter Voltage Collector Emitter Voltage
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
BC635 TRANSISTOR E C B
transistor C 639 W
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transistor C639
Abstract: transistor C635 c639 transistor C639 w
Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
transistor C639
transistor C635
c639
transistor C639 w
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bc736
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS T O -92 • C om plem ent to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Em itter V oltage at R be =1 Kohm : BC635 : BC637 : BC639
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
bc736
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bc736
Abstract: transistor C 639 W transistor BC637 complement BC635 BC639 BC637
Text: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • C om plem ent to BC 635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter V oltage at Rbe=1 Kohm C ollecto r E m itter V oltage C ollecto r E m itter V oltage
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
bc736
transistor C 639 W
transistor BC637 complement
BC639
BC637
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transistor C 639 W
Abstract: transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639
Text: BC 635 BC 637 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , P LAN A R E P IT A X IA L BC 639 Compì, of BC 636, BC 638, BC 640 - Driver stages of audio amplifiers Etages "D rive rs" d'amplificateurs BF 'CEO h21E 150m A
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150mA)
F139B.
CB-76
transistor C 639 W
transistor 639
BC 639 transistor
transistor BC 639
transistor BC 637
Transistor S 637 T
transistor BC 639 c
transistor BC 635
transistor bc 100
bc 639
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