639 TRANSISTOR PNP
Abstract: bc636 BC640 Diode bc640 BC638 638 transistor transistor BC637 complement
Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
639 TRANSISTOR PNP
bc636
BC640
Diode bc640
BC638
638 transistor
transistor BC637 complement
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BC635
Abstract: BC636 BC638 BC640
Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC635
BC636
BC638
BC640
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BC635 ECB
Abstract: BC638
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC635 ECB
BC638
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bc640
Abstract: Diode bc640 BC636 BC638
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
bc640
Diode bc640
BC636
BC638
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BC636
Abstract: BC638 BC640
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC636
BC638
BC640
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BC636
Abstract: BC638 BC640
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC636
BC638
BC640
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BC636
Abstract: BC638 BC640
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC636
BC638
BC640
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
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BC635,
BC636,
640Rev
030106E
C-120
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
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BC635,
BC636,
640Rev
180712E
C-120
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NPN Silicon Epitaxial Planar Transistor to92
Abstract: BC639-BC640 Transistor BC637 or BC639 BC635 BC636 BC637 BC638 BC639 BC640 transistor C 639 W
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
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BC635,
BC636,
640Rev
030106E
C-120
NPN Silicon Epitaxial Planar Transistor to92
BC639-BC640
Transistor BC637 or BC639
BC635
BC636
BC637
BC638
BC639
BC640
transistor C 639 W
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639 TRANSISTOR PNP
Abstract: 638 transistor bc636 npn transistor bc640 transistor bC640 OF CDIL transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 ts 4141 TRANSISTOR BC635
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
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BC635,
BC636,
C-120
BC640Rev
030106E
639 TRANSISTOR PNP
638 transistor
bc636 npn transistor
bc640
transistor bC640 OF CDIL
transistor C 639 W
BC639-BC640
NPN transistor 500ma TO-92
ts 4141 TRANSISTOR
BC635
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Untitled
Abstract: No abstract text available
Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic C ollector Emitter Voltage: at R B E = 1Kohm : : Collector Emitter Voltage: : :
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
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Untitled
Abstract: No abstract text available
Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T a = 25 1C Sym bol C h aracte ristic Collector Emitter Voltage at R b e = 1 Kohm Collector Emitter Voltage Collector Emitter Voltage
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC635/637/639 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector Em itter Voltage at R be =1 Kohm C ollector Em itter Voltage C ollector Em itter Voltage
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
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Bc636
Abstract: BC640 639 TRANSISTOR PNP BC635 BC638
Text: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC 635/637/639 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter Voltage at R b e = 1 Kohm C ollecto r E m itter Voltage
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC640
639 TRANSISTOR PNP
BC635
BC638
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC 635/637/639 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter Voltage atR eE=1Kohm C ollecto r E m itter Voltage C ollecto r E m itter Voltage
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BC636/638/640
BC636
BC638
BC640
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TRANSISTOR 636
Abstract: pnp transistor d 640 BC63B 639 TRANSISTOR PNP transistor BC 638 transistor BC 635 bc 640 bc638 638 transistor transistor BC 639
Text: BC 636 g Q 638 PNP S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR PNP S ILIC IU M , PLA N A R E P IT A X IA L BC 640 Compl. of BC 635, BC 637, BC 639 - Driver stages of audio amplifiers " " Etages Drivers d'am plificateurs BF Maximum power dissipation
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150mA)
CB-76
TRANSISTOR 636
pnp transistor d 640
BC63B
639 TRANSISTOR PNP
transistor BC 638
transistor BC 635
bc 640
bc638
638 transistor
transistor BC 639
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639 TRANSISTOR PNP
Abstract: 640 TRANSISTOR NPN pnp npn dual emitter connected
Text: UMC2N FMC2A Transistor, digitai, dual, PNP and NPN, with 2 resistors Features Dimensions Units: mm available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages UMC2N (UMT5) package marking: UMC2N and FMC2A; C2 package contains an NPN (DTC124EKA) and a PNP (DTA124EKA) digital transistor, each
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SC-74A)
DTC124EKA)
DTA124EKA)
SC-70)
SC-59)
fi40-2
639 TRANSISTOR PNP
640 TRANSISTOR NPN
pnp npn dual emitter connected
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639 TRANSISTOR PNP
Abstract: transistor C 639 W
Text: Central" CXT5401 Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEM ICONDUCTOR CXT5401 type is an PNP silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high volt
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CXT5401
OT-89
CP716
14-November
CXT5401
OT-89
639 TRANSISTOR PNP
transistor C 639 W
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Untitled
Abstract: No abstract text available
Text: S A M SU N G SEMICONDUCTOR 1 4E INC D TTbMma OOGTBbT t> PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA63 T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V c e s=3 0 V • Collector Dissipation: Pc (max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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MPSA63
625mW
MPSA62
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3^31 DD315^I1 3bT WMAPX Product specification PNP 4 GHz wideband transistor BFQ54T N A PIER PHILIPS/DISCRETE b^E J> PINNING DESCRIPTION PNP transistor in a plastic SOT37 package. PIN 1 base It is primarily intended for use in MATV and microwave amplifiers
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DD315
BFQ54T
BFQ34T.
0031ST4
BB339
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BFR38
Abstract: 639 TRANSISTOR PNP BFR 38
Text: BFR 38 PNP SILICON TRANSISTOR, EPITA X IA L PLANAR TRANSISTOR PNP SILICIUM, PLANAR EPITAXIAL - T V aerial amplifiers Amplificateurs d'antenne TV V CEO -3 5 V *C - 2 0 mA h 2 ig —3 mA 25 min. fx (—3 mA) 700 MHz min. Case TO-72 — See outline drawing CB-4 on last pages
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BFR38
BFR38
639 TRANSISTOR PNP
BFR 38
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transistor BC 236
Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
Text: *T I 17E » TELEFUNKEN E L E C T R O N IC TTdlUKFCtfllMOSlKfi • IAL66 û'tëOCHb DODTB^l BC 636 • BC 638 • BC 640 electronic Creata« léchnofogtes Silicon PNP Epitaxial Planar Transistors Applications: For complementary AF driver stages .Features:
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IAL66
15A3DIN
transistor BC 236
transistor bf 425
transistor bc 237c
TRANSISTOR 636
bc638 transistor
transistors BC 23
bc 640
transistor bc 238 b
D-636 transistor
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