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    636 TRANSISTOR Search Results

    636 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    636 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IGBT Power Module siemens ag

    Abstract: BSM100GD120DN2 siemens igbt PCIM 24197 BSM75GD120DN2 siemens igbt chip Semiconductor Group igbt siemens igbt wiring
    Text: Investigation of the static and dynamic current distribution in paralleled IGBT modules A. Mauder and W. Scholz Siemens AG, Semiconductor Group, Balanstr. 73, D-81541 Munich, Germany Tel.: +89/636-24197 Mauder , +89/636-28143 (Scholz); Fax: +89/636-22522


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    D-81541 IGBT Power Module siemens ag BSM100GD120DN2 siemens igbt PCIM 24197 BSM75GD120DN2 siemens igbt chip Semiconductor Group igbt siemens igbt wiring PDF

    samotronic

    Abstract: samotronic101 ED100 transistor Stepper Motors START-STOP circuit SAIA-Burgess plc Stepper Motor Unipolar Driver SAIA-Burgess SAIA-Burgess counter MPT phoenix connector UNIPOLAR stepper motor with step angle 1.8
    Text: Saia-Burgess Dresden GmbH Internet: http://www.saia-burgess.com email: DE01-Electronic@saia-burgess.com SAMOTRONIC101 4 636 6608 0 SAMOTRONIC101 MPT (4 636 6608 3) Manual – Motor driver unit for unipolar stepper 1. 1.1. General Information Intended operation


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    DE01-Electronic SAMOTRONIC101 SAMOTRONIC101 EN55011 EN61000-6-2 samotronic ED100 transistor Stepper Motors START-STOP circuit SAIA-Burgess plc Stepper Motor Unipolar Driver SAIA-Burgess SAIA-Burgess counter MPT phoenix connector UNIPOLAR stepper motor with step angle 1.8 PDF

    bc 640

    Abstract: BC636 BC640 Q68000-A3366 Q68000-A3367 Q68000-A3365 marking 636
    Text: PNP Silicon AF Transistors BC 636 … BC 640 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 635, BC 637, BC 639 NPN ● 2 3 1 Type Marking Ordering Code BC 636 BC 638 BC 640 – Q68000-A3365


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    Q68000-A3365 Q68000-A3366 Q68000-A3367 bc 640 BC636 BC640 Q68000-A3366 Q68000-A3367 Q68000-A3365 marking 636 PDF

    BC638

    Abstract: bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola
    Text: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80


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    BC636/D BC636 BC638 BC640 BC636/D* BC638 bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola PDF

    bc638 motorola

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80


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    BC636/D BC636 BC638 BC640 BC636/D* bc638 motorola PDF

    3055EL

    Abstract: 636 MOSFET TRANSISTOR 3055E AN636 APP636 NDS9435 RFD14N05L Si9410DY Si9433DY Si9434DY
    Text: Maxim > App Notes > BATTERY MANAGEMENT POWER-SUPPLY CIRCUITS Keywords: Reverse-Current Circuitry Protection Jan 31, 2001 APPLICATION NOTE 636 Reverse-Current Circuitry Protection Battery reversal can be fatal to portable equipment. However, numerous circuits can protect against the


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    100msec com/an636 AN636, APP636, Appnote636, 3055EL 636 MOSFET TRANSISTOR 3055E AN636 APP636 NDS9435 RFD14N05L Si9410DY Si9433DY Si9434DY PDF

    bc 352 b

    Abstract: siemens heat sink bc 640 bc 639 DATASHEET bc 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 Q68000-A3365 Q68000-A3366
    Text: NPN Silicon AF Transistors BC 635 … BC 639 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 636, BC 638, BC 640 PNP ● 2 3 Type Marking Ordering Code BC 635 BC 637 BC 639 – Q68000-A3360


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    Q68000-A3360 Q68000-A2285 Q68000-A3361 bc 352 b siemens heat sink bc 640 bc 639 DATASHEET bc 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 Q68000-A3365 Q68000-A3366 PDF

    BC639

    Abstract: BC 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 BC635 complementary 637 638 bc63
    Text: NPN Silicon AF Transistors BC 635 … BC 639 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 636, BC 638, BC 640 PNP ● 2 3 1 Type Marking Ordering Code BC 635 BC 637 BC 639 – Q68000-A3360


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    Q68000-A3360 Q68000-A2285 Q68000-A3361 BC639 BC 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 BC635 complementary 637 638 bc63 PDF

    710 comparator

    Abstract: RS 305-636
    Text: Issued March 1988 J2040 Dualregulators S tock numbers 305-636, 306-011 Two monolithic regulators in D.I.L. packages fixed or variable complementary outputs. Pin-out diagrams Features l l l l l Output currents up to 100mA Internal current limiting Thermal shutdown feature


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    J2040 100mA 600mW 900mW 8-30V) 710 comparator RS 305-636 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC635/636 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)1.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.


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    BC635/636 StyleTO-92 PDF

    TPS2051DBV

    Abstract: No abstract text available
    Text: User's Guide SLVU466B – June 2011 – Revised July 2012 Single-Channel, Power-Distribution Switch Evaluation Module This user’s guide describes the TPS20xxCDBVEVM-636 and TPS20xxCDGNEVM-635 evaluation modules EVM . This guide contains the EVM schematics, bill of materials, assembly drawings, and top


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    SLVU466B TPS20xxCDBVEVM-636 TPS20xxCDGNEVM-635 TPS2051DBV PDF

    siemens automotive relay dc 12v

    Abstract: Control of Starter-generator BTS560P gasoline direct injection BTS660P TO263 siemens functional profet abs sensor bmw 300W AMPLY BTS640S2 BTS723
    Text: 18th Conference ‘Vehicle Electronics’ 16/17 June 1998, Munich Semiconductor technologies and switches for the new automotive electrical system Semiconductor Technologies and Switches for new Automotive Electrical Systems Dr. Alfons Graf, Siemens AG, HL PS TM, 81617 Munich, Tel. +49 89/636-22805


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    32-bit de/semiconductor/products/36/3673 HDT98E siemens automotive relay dc 12v Control of Starter-generator BTS560P gasoline direct injection BTS660P TO263 siemens functional profet abs sensor bmw 300W AMPLY BTS640S2 BTS723 PDF

    710 comparator

    Abstract: RS 305-636 rs 306-011 positive negative voltage regulator variable
    Text: Issued March 1997 232-2201 Data Pack J Dual regulators Data Sheet RS stock numbers 305-636, 306-011 Two monolithic regulators in D.I.L. packages fixed or variable complementary outputs. Variable RS stock no. 306-011 Absolute maximum ratings at TAMB 25°C Input voltage _±35 V


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    900mW 100mA 710 comparator RS 305-636 rs 306-011 positive negative voltage regulator variable PDF

    ELECTRONIC 12V RELAY HELLA

    Abstract: Resetable fuse PPTC anps039e SMD fuse 10A siemens automotive relay dc 12v ptc resetable low current fuse SIEMENS FUSE Electronic Fuse BTS640S2 FUSE SIEMENS
    Text: 8th Intern. Conference Vehicle Electronics October 8-9, 1998, Baden-Baden Fuse Replacement with Smart Power Semiconductors Fuse Replacement with Smart Power Semiconductors Dr. A. Graf, Siemens AG, HL PS TM, 81617 Munich, Tel. 089/ 636-22805 H. Estl, Siemens AG, HL PS TM 2, 81617 Munich


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    de/semiconductor/products/36/3673 BABA98E ELECTRONIC 12V RELAY HELLA Resetable fuse PPTC anps039e SMD fuse 10A siemens automotive relay dc 12v ptc resetable low current fuse SIEMENS FUSE Electronic Fuse BTS640S2 FUSE SIEMENS PDF

    ELECTRONIC 12V RELAY HELLA

    Abstract: ptc resetable low current fuse polyswitch 100 Xenon lamp H4 converter fuse 50a BTS734L1 Electronic Fuse POLYSWITCH ESTL 740S2
    Text: 8th Intern. Conference Vehicle Electronics October 8-9, 1998, Baden-Baden Fuse Replacement with Smart Power Semiconductors Fuse Replacement with Smart Power Semiconductors Dr. A. Graf, Siemens AG, HL PS TM, 81617 Munich, Tel. 089/ 636-22805 H. Estl, Siemens AG, HL PS TM 2, 81617 Munich


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    towards1998, de/semiconductor/products/36/3673 BABA98E ELECTRONIC 12V RELAY HELLA ptc resetable low current fuse polyswitch 100 Xenon lamp H4 converter fuse 50a BTS734L1 Electronic Fuse POLYSWITCH ESTL 740S2 PDF

    4k7 variable resistor

    Abstract: circuit diagram of rc car smd Variable resistor 10K ohm 3 pins Variable resistor 10K ohm Variable resistor 10K ohm siemens "function generator" TDA car audio amplifier RC CAR circuit diagram RC car circuit VOLTAGE SENSITIVE resistor SIEMENS
    Text: +/ $SSOLFDWLRQ 1RWH +LJK UHTXHQF\ 3URGXFWV CAR RADIO FM – IF TDA 4321XS HL HF AT CR MCH B R. EMSLANDER TEL.: .49 89 636 24465 Dec. 18, 98 TDA 4321XS CAR RADIO Functional Description: The FM IF demodulator TDA 4321XS has been designed especially for car radio applications.


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    4321XS 4321XS 600BNS-A1004HM 4k7 variable resistor circuit diagram of rc car smd Variable resistor 10K ohm 3 pins Variable resistor 10K ohm Variable resistor 10K ohm siemens "function generator" TDA car audio amplifier RC CAR circuit diagram RC car circuit VOLTAGE SENSITIVE resistor SIEMENS PDF

    rtd pt100 interface to 8051

    Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
    Text: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515


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    OPA340PA: ADS7816P: 12-Bit 200KHz OPA2337PA: ADS7822P: INA125UA: OPA680U: OPA547F: rtd pt100 interface to 8051 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm PDF

    WM 53B

    Abstract: No abstract text available
    Text: SIEM ENS PNP Silicon AF Transistors • • • • BC 636 . BC 640 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 635, BC 637, BC 639 NPN Type Marking BC 636 BC 638 BC 640 Ordering Code Q68000-A3365


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    Q68000-A3365 Q68000-A3366 Q68000-A3367 EHP00204 EHP00202 EHP00205 flS35bDS 01EDSM2 fl235b05 D1205M3 WM 53B PDF

    BC639

    Abstract: r 639 r 640 BC 639 bc635 BC637 JEDECTO-92 bc 640 BC 137 complementary 637 638 BC 138
    Text: BC 635 • BC 637 • BC 639 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Kom plem entäre NF-Treiberstufen. K om plernentärtypen zu BC 636/BC 638/BC 640 Applications: For com plem entary AF driver stages.


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    636/BC 638/BC BC639 r 639 r 640 BC 639 bc635 BC637 JEDECTO-92 bc 640 BC 137 complementary 637 638 BC 138 PDF

    BC640

    Abstract: bc636 bc 637 bc 640 bc 141 BC 638 r 639 r 640 bc638 bc 106 BC 143
    Text: BC 636 • BC 638 • BC 640 Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Kom plem entäre NF-Treiberstufen. K om plernentärtypen zu BC 635/BC 637/BC 639 Applications: For com plem entary AF driver stages.


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    635/BC 637/BC BC640 bc636 bc 637 bc 640 bc 141 BC 638 r 639 r 640 bc638 bc 106 BC 143 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistors • BC 635 . BC 639 High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 636, BC 638, BC 640 PNP Type Marking BC 635 BC 637 BC 639 Q68000-A3360 Q68000-Â2285


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    Q68000-A3360 Q68000-Ã Q68000-A3361 235kG5 BC635 a23Sb05 01H0S37 S3Sb05 D1H053Ã PDF

    transistor BC 236

    Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
    Text: *T I 17E » TELEFUNKEN E L E C T R O N IC TTdlUKFCtfllMOSlKfi • IAL66 û'tëOCHb DODTB^l BC 636 • BC 638 • BC 640 electronic Creata« léchnofogtes Silicon PNP Epitaxial Planar Transistors Applications: For complementary AF driver stages .Features:


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    IAL66 15A3DIN transistor BC 236 transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor PDF

    BC639 18

    Abstract: 2N929 2N930 BCW60 BCW61 BCX70 BCX71 BCY58 BCY59 BCY72
    Text: AF transistors Continued Type Group Structure FigNr. Maximum ratings C h aracteristics ^tot at 7C mA ^CEO V fj at MHz 7C mA af e at /q and LU 'am b = +45° c W mA F at dB / kHz BC 635 NPN 27 1.06) 1000 45 50 50 40-250 150 2 - - BC 636 PNP 27 1.06) 1000 45


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    BCW60 BCW61 BC639 18 2N929 2N930 BCX70 BCX71 BCY58 BCY59 BCY72 PDF

    2N4351 MOTOROLA

    Abstract: 3N170 3c169 DFM12 3N169
    Text: MOTOROLA SC { D I O D E S / O P T O } 34 636 72 55 M O T O RO LA SC DIODES/OPTO DE|b3b755S CID3ÛD41 3^ c 38041 FIËLD-EFFECT TRANSISTORS DICE (continued) D T - JJT- Z - i 3C169 DIE NO. LINE SOURCE — DFM122 This die provides performance equal to or better than that of


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    b3b755S DFM122 2N4351 3N169 3N170 3N171 MMCS0122 3C169 2N4351 MOTOROLA 3c169 DFM12 PDF