Untitled
Abstract: No abstract text available
Text: InGaAlP-High Brightness-Lumineszenzdiode 632 nm InGaAlP High Brightness Light Emitting Diode (632 nm) F 0280D Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 632 nm Technologie:InGaAIP
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C1406
Abstract: No abstract text available
Text: InGaAlP-High Brightness-Lumineszenzdiode 632 nm InGaAlP High Brightness Light Emitting Diode (632 nm) F 0280D Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 632 nm Technologie:InGaAIP
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0280D
C1406
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GMOY6088
Abstract: NM7001
Text: InGaAlP-High Brightness-Lumineszenzdiode 632 nm, Enhanced Power InGaAlP High Brightness Light Emitting Diode (632 nm, Enhanced Power) F 0280E Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 632 nm
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0280E
GMOY6088
NM7001
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Untitled
Abstract: No abstract text available
Text: InGaAlP-High Brightness-Lumineszenzdiode 632 nm, Enhanced Power InGaAlP High Brightness Light Emitting Diode (632 nm, Enhanced Power) F 0280E Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 632 nm
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0280E
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C1406
Abstract: No abstract text available
Text: InGaAlP-High Brightness-Lumineszenzdiode 632 nm InGaAlP High Brightness Light Emitting Diode (632 nm) F 0280D Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature Chipgröße 200 x 200 µm Wellenlänge: 632 nm Technologie:InGaAIP Typ. Lichtstärke: 35 mcd @ 20 mA (in TO18
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0280D
C1406
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Untitled
Abstract: No abstract text available
Text: InGaAlP-High Brightness-Lumineszenzdiode 632 nm, Enhanced Power InGaAlP High Brightness Light Emitting Diode (632 nm, Enhanced Power) F 0280E Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 632 nm
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0280E
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barcodescanner
Abstract: barcode scanner OSRAM automotive lamp F 1998A
Text: InGaAlP-High Brightness-Lumineszenzdiode 632 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (632 nm, High Optical Power) F 1998A Vorläufige Daten/Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch Oberflächenstrukturierung und Stromverteilung
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Mc14066 MOtorola
Abstract: 74hc4066A HC4066 hc4066a HC4316A MC14016 MC14066 MC74HCXXXXAN switch Mc14066 MOtorola switch Mc14016 MOtorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MC54/74HC4066A Quad Analog Switch/ Multiplexer/Demultiplexer High–Performance Silicon–Gate CMOS J SUFFIX CERAMIC PACKAGE CASE 632–08 14 1 The MC54/74HC4066A utilizes silicon–gate CMOS technology to
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MC54/74HC4066A
MC54/74HC4066A
HC4066A
MC14016
MC14066.
DL129
MC74HC4066A/D
Mc14066 MOtorola
74hc4066A
HC4066
HC4316A
MC14016
MC14066
MC74HCXXXXAN
switch Mc14066 MOtorola
switch Mc14016 MOtorola
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2sc5480
Abstract: 2SC5480 equivalent damper 2SC548 Hitachi DSA001650
Text: 2SC5480 Silicon NPN Triple Diffused Horizntal Deflection Output ADE-208-632 Z 1st. Edition Oct. 1, 1998 Features • High breakdown voltage VCES = 1500 V • Isolated package TO–3PFM • Built-in damper diode Outline TO–3PFM C 2 1 B 1. Base 2. Collector
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2SC5480
ADE-208-632
2sc5480
2SC5480 equivalent
damper
2SC548
Hitachi DSA001650
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ic 825 DNA
Abstract: CD4007A CD4007UB MC14007UB
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14007UB Dual Complementary Pair Plus Inverter L SUFFIX CERAMIC CASE 632 The MC14007UB multi–purpose device consists of three N–channel and three P–channel enhancement mode devices packaged to provide access to
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MC14007UB
MC14007UB
CD4007A
CD4007UB
MC14007UB/D*
MC14007UB/D
ic 825 DNA
CD4007UB
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Untitled
Abstract: No abstract text available
Text: SKiiP 632 GB 120 - 315 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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skiip gb 120
Abstract: skiip 632 gb 120
Text: SKiiP 632 GB 120 - 315 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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IGBT11)
Rthjs10)
skiip gb 120
skiip 632 gb 120
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MC1406L
Abstract: MC1506 MC1723G C1506 MC1506L 20PF 406L MC1539G MC155SG mc1723
Text: . specifications and Applications Information SIX BIT, MULTIPLYING DIGITAL-TO-ANALOG . . . designed of a six-bit for CONVERTER use where the output word an analog digital and current input is a linear product voltage. CERAMIC PACKAGE CASE 632 TO-116 FIGURE
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O-116
MC1506
MC1506L
MC1406L
MC1406L
MC1506
MC1723G
C1506
MC1506L
20PF
406L
MC1539G
MC155SG
mc1723
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skiip 632 gb 120
Abstract: No abstract text available
Text: SKiiP 632 GB 120 - 315 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C
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ku 602 vc
Abstract: CD4016 CD4016B CD4066B HC4016 MC14016B MC14066B MC14XXXBCL MC14XXXBCP MC14XXXBD
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14016B Quad Analog Switch/Quad Multiplexer L SUFFIX CERAMIC CASE 632 The MC14016B quad bilateral switch is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. Each MC14016B consists of four independent switches capable of
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MC14016B
MC14016B
CD4016B,
CD4066B
MC14016B/D*
MC14016B/D
ku 602 vc
CD4016
CD4016B
CD4066B
HC4016
MC14066B
MC14XXXBCL
MC14XXXBCP
MC14XXXBD
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MC14024B
Abstract: MC14024 CD4024B MC14023B MC14023UB MC14XXXBCL MC14XXXBCP MC14XXXBD ceramic case 632
Text: MOTOROLA MC14023B see Page 6-5 SEMICONDUCTOR TECHNICAL DATA MC14023UB (see Page 6-14) MC14024B 7-Stage Ripple Counter L SUFFIX CERAMIC CASE 632 The MC14024B is a 7–stage ripple counter with short propagation delays and high maximum clock rates. The Reset input has standard noise
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MC14023B
MC14023UB
MC14024B
MC14024B
CD4024B
MC14024B/D*
MC14024B/D
MC14024
CD4024B
MC14023B
MC14023UB
MC14XXXBCL
MC14XXXBCP
MC14XXXBD
ceramic case 632
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AD9951
Abstract: E03558 ADN2812 AN-632
Text: AN-632 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/326-8703 • www.analog.com Provisioning Data Rates Using the AD9951 DDS as an Agile Reference Clock for the ADN2812 Continuous-Rate CDR
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AN-632
AD9951
ADN2812
AD9951
E03558
AN-632
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MC14584B
Abstract: schmitt trigger adc mc14069ub motorola mc14584 motorola CASE 632 CERAMIC DIMENSION CD40106
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14584B Hex Schmitt Trigger L SUFFIX CERAMIC CASE 632 The MC14584B Hex Schmitt Trigger is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high
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MC14584B
MC14584B
MC14069UB
MC1406nufacture
MC14584B/D*
MC14584B/D
schmitt trigger adc
mc14069ub motorola
mc14584
motorola CASE 632 CERAMIC DIMENSION
CD40106
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Untitled
Abstract: No abstract text available
Text: 2SC5480 Silicon NPN Triple Diffused Horizntal Deflection Output HITACHI Features • High breakdown voltage VCES= 1500 V • Isolated package TO-3PFM • Built-in damper diode Outline TO-3PFM 1.Base 2.Collecto 3.Emitter ADE-208-632 Z 1st. Edition Oct. 1, 1998
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2SC5480
ADE-208-632
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C14016B Quad Analog Sw itch/Q uad M u ltip lexer L SUFFIX CERAM IC CASE 632 The MC14016B quad bilateral switch is constructed with MOS P-channel and N -channel enhancem ent mode devices in a single monolithic structure.
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C14016B
MC14016B
MC14016B/D
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P 131 GB
Abstract: skiip 632 gb 120 315CTV713 skiip gb 120
Text: 5EMIKR0N SKiiP 632 GB 120 - 315 CTV Absolute Maximum Ratings Symbol Values Unite 1200 900 600 - 4 0 . + 150 3000 51 600 1200 6480 210 V |Conditions 1> IGBT & Inverse Diode V ces V c c 9> Operating D C link voltage lc T i 3 Theatsink ~ 25 °C V,sol 4) IGBT & Diode
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315CTV713)
B7-40
P 131 GB
skiip 632 gb 120
315CTV713
skiip gb 120
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Untitled
Abstract: No abstract text available
Text: g MOTOROLA QUAD 2-INPUT EXCLUSIVE-OR GATE QUAD 2-INPUT EXCLUSIVE-OR GATE FAST SCHOTTKY TTL VCC J SUFFIX CERAMIC CASE 632-08 N SUFFIX PLASTIC CASE 646-06 B D SUFFIX SOIC CASE 751A-02 ORDERING INFORMATION MC54FXXJ MC74FXXN MC74FXXD Ceramic Plastic SOIC
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MC54FXXJ
MC74FXXN
MC74FXXD
51A-02
MC54/74F86
54/74F
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Untitled
Abstract: No abstract text available
Text: MOTOROi-A TRIPLE 3-INPUT NAND GATE TRIPLE 3-INPUT NAND GATE FAST SCHOTTKY TTL vcc J SUFFIX CERAMIC CASE 632-08 N SUFFIX PLASTIC CASE 646-06 14 D SUFFIX SOIC CASE 751A-02 14 ORDERING INFORMATION MC54FXXJ MC74FXXN MC74FXXD Ceramic Plastic SOIC GUARANTEED OPERATING RANGES
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51A-02
MC54FXXJ
MC74FXXN
MC74FXXD
MC54/74F10
54/74F
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SN54LSXXXJ
Abstract: No abstract text available
Text: <8> MOTOROLA SN54/74LS260 DUAL 5-INPUT NOR GATE DUAL 5-INPUT NOR GATE vcc LOW POWER SCHOTTKY J SUFFIX CERAMIC CASE 632-08 GND 1 N SUFFIX FrP csss, 1 D SUFFIX SOIC CASE 751A-02 5 ORDERING INFORMATION SN54LSXXXJ SN74LSXXXN SN74LSXXXD Ceramic Plastic SOIC GUARANTEED OPERATING RANGES
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SN54/74LS260
51A-02
SN54LSXXXJ
SN74LSXXXN
SN74LSXXXD
SN54/74LS260
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