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    6264 STATIC RAM Search Results

    6264 STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    CY7C09389V-9AXI Rochester Electronics CY7C09389 - 3.3 V 64 K X 18 Synchronous Dual-Port Static RAM, Industrial Temp Visit Rochester Electronics Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation

    6264 STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cy3341

    Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
    Text: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194


    Original     		PDF 7C147 7C123 7C148 7C149 7C150 7C189 7C190 7C122 7C167A 7C168A cy3341 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram

    verilog for SRAM 512k word 16bit

    Abstract: CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip
    Text: Product Selector Guide Static RAMs Organization/Density Density X1 X4 4K X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195 7C199 7C1399/V 62256/V 62256V25 62256V18


    Original     		PDF 7C148 7C149 7C150 7C167A 7C168A 7C128A 7C187 7C164 7C166 7C185 verilog for SRAM 512k word 16bit CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip

    Triton P54C

    Abstract: cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide
    Text: Product Selector Guide Fast Static RAMs Organization/Density Density X1 X4 X4 SIO X8 4K 7C147 2147 7C123 7C148 7C149 7C150 2148 2149 7C122 9122 93422 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195


    Original     		PDF 7C147 7C123 7C148 7C149 7C150 7C122 7C167A 7C168A 7C128A 7C187 Triton P54C cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide

    2M X 32 Bits 72-Pin Flash SO-DIMM

    Abstract: AN2131QC Triton P54C SO-DIMM 72pin 32bit 5V 2M AN2131-DK001 AN2131SC vhdl code for pipelined matrix multiplication VIC068A user guide parallel interface ts vhdl 7C037
    Text: GO TO WEB MAIN INDEX 3URGXFW 6HOHFWRU *XLGH Static RAMs Organization/Density Overview Density X1 X4 X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 4 Kb 16 Kb 7C167A 7C168A 7C128A 6116 64 Kb to 72 Kb 7C187 7C164 7C166 7C185 6264 7C182 256 Kb to 288 Kb 7C197 7C194


    Original     		PDF 7C148 7C149 7C150 7C167A 7C168A 7C128A 7C187 7C164 7C166 7C185 2M X 32 Bits 72-Pin Flash SO-DIMM AN2131QC Triton P54C SO-DIMM 72pin 32bit 5V 2M AN2131-DK001 AN2131SC vhdl code for pipelined matrix multiplication VIC068A user guide parallel interface ts vhdl 7C037

    GR881

    Abstract: STATIC RAM 6264 6264 static RAM 6264 ram ram 6264 8k static ram 6264 6264* ram 6264 cmos ram 6264 8k
    Text: GR881 8K x 8 NON-VOLATILE RAM GR881 (8K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR881 is a 8192 word by 8 bits (8K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.


    Original     		PDF GR881 GR881 2000/95/EC STATIC RAM 6264 6264 static RAM 6264 ram ram 6264 8k static ram 6264 6264* ram 6264 cmos ram 6264 8k

    GR881-H

    Abstract: STATIC RAM 6264 6264 ram RAM 6264 6264 cmos ram 6264 8k GR88-H1
    Text: GR881-H 8K x 8 NON-VOLATILE RAM GR881-H (8K x 8) NON-VOLATILE RAM READ CYCLE > Address < CE t OH > t ACC > < tACS > tOLZ t> < <CLZ> DOUT < > t OHZ > WRITE CYCLE 1 t WC < Read Cycle Parameter Read cycle time Access time CE to output valid OE to output valid


    Original     		PDF GR881-H A0-A12 GR881-H STATIC RAM 6264 6264 ram RAM 6264 6264 cmos ram 6264 8k GR88-H1

    AS6C6264A

    Abstract: 6264 SRAM STATIC RAM 6264 AS6C6264A-70PCN SRAM 6264 6264 28pin 6264 static RAM AS6C6264 AS6C6264A-70PIN sram 6800
    Text: MARCH 2009 AS6C6264A 8K X 8 BIT LOW POWER CMOS SRAM FEATURES DESCRIPTION •   The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention


    Original     		PDF AS6C6264A AS6C6264A MARCH/2009 6264 SRAM STATIC RAM 6264 AS6C6264A-70PCN SRAM 6264 6264 28pin 6264 static RAM AS6C6264 AS6C6264A-70PIN sram 6800

    Untitled

    Abstract: No abstract text available
    Text: H Y 6264 A-I S e r ie s •HYUNDAI 8Kx 8-bit CMOS SRAM DESCRIPTION Tiie HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY6264A-I 1DB02-11-MAY94 4b75Gflfl 00Q3b HY6264ALP-I HY6264ALLP-I HY6264AU-I

    STATIC RAM 6264

    Abstract: RAM 6264 6264 EPROM 6116 RAM 6116H 6264 RAM 6264 cmos ram 6264 static RAM rom 6116 6116 static RAM 150ns
    Text: "SILICON I N T E G R A T O ETE D BssaaflT oaaaoio 7 ‘T-mp-a.s- CMOS STATIC RAM SIS 6116/SIS 6116H 2Kx8 High Speed CMOS Static RAM FEATURE •Single + 5V supply and high density 24 pin package •Access Time: 3 d / 45/55/70ns Max. SIS 6116H 100/120/150ns Max. (SIS 6116)


    OCR Scan     		PDF 6116/SIS 6116H 45/55/70ns 6116H) 100/120/150ns 250mW STATIC RAM 6264 RAM 6264 6264 EPROM 6116 RAM 6264 RAM 6264 cmos ram 6264 static RAM rom 6116 6116 static RAM 150ns

    organizational structure samsung

    Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
    Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116


    OCR Scan     		PDF LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256

    ram 6264

    Abstract: motorola 6264 ram M193 MCM6264C 6264 6264* ram 6a3t
    Text: M O T O R O L A SC M E M O R Y / A S I C b 3 b 7 5 S l 0 0 0 0 1 3 0 3 M .H0T3. MhE D .T -to -JS -J ? MCM6264C 8K x 8 Bit Fast Static RAM PIN ASSIGNMENT NC [ 1 • A12 [ 2 PIN NAMES A0-A12 .Address Input DQ0-DQ7 . . . . . . . . . . Data Input/Output


    OCR Scan     		PDF MCM6264C A0-A12 MCM6264C MCM6264CP12 MCM6264CNJ12 MCM6264CNJ12R2 ram 6264 motorola 6264 ram M193 6264 6264* ram 6a3t

    M6264

    Abstract: MCM6264 MCM6264J35 MCM6264P motorola 6264 ram MCM6264J30 MCM6284
    Text: MO TOR OLA SC M EM ORY/ AS IC IME 0 I a3t>7S51 0070^15 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6264 8K x 8 Bit Fast Static RAM The MCM6264 Is a 66,536 bit static random access memory organized as 8192 words of 8 bits, fabricated using Motorola's high-performance silicon-gate CM OS technology.


    OCR Scan     		PDF MCM6264 MCM6264 MCM6264P30 MCM6264P3S MCM6264P45 MCM6264P55 MCM6264WP30 MCM6264WP35 M6264WP45 MCM6264WP55 M6264 MCM6264J35 MCM6264P motorola 6264 ram MCM6264J30 MCM6284

    RAM 6264

    Abstract: 6264 static RAM STATIC RAM 6264 6264 cmos ram
    Text: INSTRUMENTS USA • • • • • • • Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programming cycles Standard 28-pin JEDEC pin out GR881 is 8 kilobyte of non-volatile memory which is pin-compatible


    OCR Scan     		PDF 28-pin GR881 A0-A12 GR881. RAM 6264 6264 static RAM STATIC RAM 6264 6264 cmos ram

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CYPRESS CY6264 8K x 8 Static RAM Features • 55,70 ns access times • CMOS for optimum speed/power • Easy memory expansion with CEj, CE2, and OE features • TTL-compatible inputs and outputs • Automatic power-down when dese­ lected F unctional D escription


    OCR Scan     		PDF CY6264 Y6264 CY6264 330-mil-wide CY6264â 28-Lead 330-Mil

    STATIC RAM 8464

    Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
    Text: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)


    OCR Scan     		PDF L7C167 L7C168 L7C170 L7C171 L7C172 L6116/ L6116L L7C183 CY7C183 L7C184 STATIC RAM 8464 IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram

    Untitled

    Abstract: No abstract text available
    Text: GREENWICH 8K x 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • • • • GR881 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM


    OCR Scan     		PDF GR881 28-pin GR881 GR881.

    mk48z30

    Abstract: external RAM ic 6264 CI 6264 SRAM 6264 application note 6264 cmos ram STATIC RAM 6264 SRAM 6264 ic 6264 6264 SRAM
    Text: MK48Z30/30A B -10/12/15 f Z J SG S-IU O M SO N ^7# RfflD(g[S(Q)IILi in^®ROO©i 32 K X 8 ZEROPOWER RAM ADVANCE DATA • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. 1 ■ READ-CYCLE TIME EQUALS WRITE-CYCLE


    OCR Scan     		PDF MK48Z30/30A MK48Z30A: 28-DIP MK48Z30-B10 MK48Z30-B12 MK48Z30-815 MK48Z30A-B10 MK48Z30A-B12 MK48Z30A-B15 mk48z30 external RAM ic 6264 CI 6264 SRAM 6264 application note 6264 cmos ram STATIC RAM 6264 SRAM 6264 ic 6264 6264 SRAM

    MS6264L-10PC

    Abstract: MS6264L-70PC MS6264L-10FC MS6264L-10 MS6264L10FC ic 6264 6264 ttl ram S6264
    Text: MOSEL- VITELIC M S6264 8 K x 8 C M O S STA TIC R A M Features Description • Available in 70 /10 0 ns Max. ■ Automatic power-down when chip disabled ■ Lower power consumption: M S6264L — 467.5m W (Max.) Operating — 16.5m W (M ax.) Standby — 5 00 h W (Max.) Standby


    OCR Scan     		PDF S6264 S6264L 500mV MS6264L-70PC MS6264L-70FC MS6264L-10PC MS6264L-10FC MS6264L-10FC MS6264L-10 MS6264L10FC ic 6264 6264 ttl ram

    MCM6264

    Abstract: mcm6264p20 MCM6264BP25 MCM6264BP
    Text: MOTOROLA H SEM ICO NDUCTO R TECHNICAL DATA MCM6264 8K x 8 Bit Fast Static RAM The MCM6264 is fabricated using Motorola's high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or tim ­ ing strobes, while CMOS circuitry reduces power consum ption and provides tor


    OCR Scan     		PDF MCM6264 MCM6264 300-mil CM6264P15 MCM6264P20 MCM6264BP25 MCM6264BP35 MCM6264NJ15 MCM6264BP

    mk6264

    Abstract: No abstract text available
    Text: SGS-THOMSON IM MK6264 N,S 70/120 MK6264L(N,S)70/120 MK6264U(N,S)70/120 64K (8K x 8-BIT) CMOS STATIC RAM FEATURES □ 70 And 120 ns Address Access Time □ Equal Access And Cycle Times □ Static Operation * No Clocks Or Timing Strobes Required □ Low Vcc Data Retention 2 Volts


    OCR Scan     		PDF MK6264 MK6264L MK6264U 28-Pin DIP-28 SOIC-28 A0-A12

    KM6264BL-10L

    Abstract: 6264bl km6264 6264 SRAM
    Text: KM6264BÜKM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 7 0 ,1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) :10,«W (typ) LVersion : W (typ) LL.Version Operating:55mW/1 MHz • Single 5V±10% power supply


    OCR Scan     		PDF KM6264BÃ KM6264BL-L 120ns 55mW/1 KM6264BLP/BLP-L 28-DIP-600B KM6264BLS/BLS-L 28-DIP-300 KM6264BLG/BLG-L KM6264BLVBL-L KM6264BL-10L 6264bl km6264 6264 SRAM

    MCM6264P20

    Abstract: MCM6264P mcm6264bp25 mcm6264bnj35 MCM6264BP MCM6264 motorola 5118 setup MCM6264BP35 MCM6264BP-35 6264 static RAM
    Text: nOTOKOLA SC HEriORY/ASIC MOTOROLA S IE ]> b3b?251 QOflBTSe 7 b l • M0T3 ■ SEM ICO ND U C TO R mmmammt TECHNICAL DATA MCM6264 8K x 8 Bit Fast Static RAM The MCM6264 is fabricated using Motorola’s high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or tim­


    OCR Scan     		PDF MCM6264 MCM6264 b3b72Sl 300-mil MCM6264P15 MCM6264P20 MCM6264BP25 MCM6264BP35 MCM6264P mcm6264bnj35 MCM6264BP motorola 5118 setup MCM6264BP-35 6264 static RAM

    MCM6264P

    Abstract: MCM6264WP45 6264N MCM6264P45 motorola 6264 ram MCM6264wp MCM6264WP35 MCM6264 MCM6264-46
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6264 8 K x 8 Bit Fast Static RAM The MCM6264 Is a 65,536 bit static random access memory organized a s 8192 words of 8 bits, fabricated using Motorola's high-performance silicon-gate CM O S technology. Static design eliminates the need for external clocks or timing strobes, while CM O S circui­


    OCR Scan     		PDF MCM6264 MCM6264P30 MCM6264P3S MCM6264P45 MCM6264P55 MCM6264WP30 MCM6264WP35 MCM6264WP45 MCM6264WP55 MCM6264P 6264N motorola 6264 ram MCM6264wp MCM6264-46

    STATIC RAM 6264

    Abstract: ram 6264 Hyundai Semiconductor 6264 Hyundai 6264 DD172 CY6264
    Text: CYPRESS PRELIMINARY CY6264 8K x 8 Static RAM Features active HIGH chip enable CE2 , and active LOW output enable (OE) and three-state • 55,70 ns access times drivers. Both devices have an automatic • CMOS for optimum speed/power power-down feature (CEi), reducing the


    OCR Scan     		PDF CY6264 CY6264is 450-mil 300-mil 25iHbb2 STATIC RAM 6264 ram 6264 Hyundai Semiconductor 6264 Hyundai 6264 DD172