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    6264 RAM Search Results

    6264 RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy
    27S13A/BEA Rochester Electronics LLC 27S13A - 2048-Bit (512X4) Bipolar RAM Visit Rochester Electronics LLC Buy
    62646TU Renesas Electronics Corporation 16-BIT TRANSCEIVER REGIST Visit Renesas Electronics Corporation
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    CY7C09389V-9AXI Rochester Electronics CY7C09389 - 3.3 V 64 K X 18 Synchronous Dual-Port Static RAM, Industrial Temp Visit Rochester Electronics Buy

    6264 RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ECX-6264-37.08791M RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6264 -37.08791M Series Ecliptek Custom Crystal Nominal Frequency 37.08791MHz


    Original     		PDF ECX-6264-37 08791M ECX-6264 08791MHz MIL-STD-883, MIL-STD-202,

    cy3341

    Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
    Text: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194


    Original     		PDF 7C147 7C123 7C148 7C149 7C150 7C189 7C190 7C122 7C167A 7C168A cy3341 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram

    verilog for SRAM 512k word 16bit

    Abstract: CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip
    Text: Product Selector Guide Static RAMs Organization/Density Density X1 X4 4K X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195 7C199 7C1399/V 62256/V 62256V25 62256V18


    Original     		PDF 7C148 7C149 7C150 7C167A 7C168A 7C128A 7C187 7C164 7C166 7C185 verilog for SRAM 512k word 16bit CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip

    Triton P54C

    Abstract: cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide
    Text: Product Selector Guide Fast Static RAMs Organization/Density Density X1 X4 X4 SIO X8 4K 7C147 2147 7C123 7C148 7C149 7C150 2148 2149 7C122 9122 93422 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195


    Original     		PDF 7C147 7C123 7C148 7C149 7C150 7C122 7C167A 7C168A 7C128A 7C187 Triton P54C cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide

    2M X 32 Bits 72-Pin Flash SO-DIMM

    Abstract: AN2131QC Triton P54C SO-DIMM 72pin 32bit 5V 2M AN2131-DK001 AN2131SC vhdl code for pipelined matrix multiplication VIC068A user guide parallel interface ts vhdl 7C037
    Text: GO TO WEB MAIN INDEX 3URGXFW 6HOHFWRU *XLGH Static RAMs Organization/Density Overview Density X1 X4 X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 4 Kb 16 Kb 7C167A 7C168A 7C128A 6116 64 Kb to 72 Kb 7C187 7C164 7C166 7C185 6264 7C182 256 Kb to 288 Kb 7C197 7C194


    Original     		PDF 7C148 7C149 7C150 7C167A 7C168A 7C128A 7C187 7C164 7C166 7C185 2M X 32 Bits 72-Pin Flash SO-DIMM AN2131QC Triton P54C SO-DIMM 72pin 32bit 5V 2M AN2131-DK001 AN2131SC vhdl code for pipelined matrix multiplication VIC068A user guide parallel interface ts vhdl 7C037

    GR881

    Abstract: STATIC RAM 6264 6264 static RAM 6264 ram ram 6264 8k static ram 6264 6264* ram 6264 cmos ram 6264 8k
    Text: GR881 8K x 8 NON-VOLATILE RAM GR881 (8K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR881 is a 8192 word by 8 bits (8K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.


    Original     		PDF GR881 GR881 2000/95/EC STATIC RAM 6264 6264 static RAM 6264 ram ram 6264 8k static ram 6264 6264* ram 6264 cmos ram 6264 8k

    GR881-H

    Abstract: STATIC RAM 6264 6264 ram RAM 6264 6264 cmos ram 6264 8k GR88-H1
    Text: GR881-H 8K x 8 NON-VOLATILE RAM GR881-H (8K x 8) NON-VOLATILE RAM READ CYCLE > Address < CE t OH > t ACC > < tACS > tOLZ t> < <CLZ> DOUT < > t OHZ > WRITE CYCLE 1 t WC < Read Cycle Parameter Read cycle time Access time CE to output valid OE to output valid


    Original     		PDF GR881-H A0-A12 GR881-H STATIC RAM 6264 6264 ram RAM 6264 6264 cmos ram 6264 8k GR88-H1

    ic 74hc245

    Abstract: M68HC11evm IC 74HC00 eeprom copy schematic 27128 6264 ram IC 74hc74 XC68HC11A1FN MC68HC11E1FN ic 6264 E02F EEPROM
    Text: M68HC11EVM/AD8 February 1994 M68HC11EVM EVALUATION MODULE USER’S MANUAL Information contained in this document applies to REVision G M68HC11EVM Evaluation Modules, serial numbers 1000 through 9999. Copyright 1989, 1994 by Motorola Inc. Motorola reserves the right to make changes without further notice to any products herein to


    Original     		PDF M68HC11EVM/AD8 M68HC11EVM M68HC11EVM/D ic 74hc245 IC 74HC00 eeprom copy schematic 27128 6264 ram IC 74hc74 XC68HC11A1FN MC68HC11E1FN ic 6264 E02F EEPROM

    AS6C6264A

    Abstract: 6264 SRAM STATIC RAM 6264 AS6C6264A-70PCN SRAM 6264 6264 28pin 6264 static RAM AS6C6264 AS6C6264A-70PIN sram 6800
    Text: MARCH 2009 AS6C6264A 8K X 8 BIT LOW POWER CMOS SRAM FEATURES DESCRIPTION •   The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention


    Original     		PDF AS6C6264A AS6C6264A MARCH/2009 6264 SRAM STATIC RAM 6264 AS6C6264A-70PCN SRAM 6264 6264 28pin 6264 static RAM AS6C6264 AS6C6264A-70PIN sram 6800

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITEUC M S 6264 8 K x 8 CM O S STA TIC R A M Features Description • Available in 70/100 ns Max. ■ Automatic power-down when chip disabled ■ Lower power consumption: MS6264L — 467.5mW (Max.) Operating — 16.5mW (Max.) Standby — 500^W (Max.) Standby


    OCR Scan     		PDF MS6264L MS6264 MS6264L-70FC MS6264L-10PC MS6264L-10FC MS6264 b3S33Tl

    Untitled

    Abstract: No abstract text available
    Text: H Y 6264 A-I S e r ie s •HYUNDAI 8Kx 8-bit CMOS SRAM DESCRIPTION Tiie HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY6264A-I 1DB02-11-MAY94 4b75Gflfl 00Q3b HY6264ALP-I HY6264ALLP-I HY6264AU-I

    MB8464-15L

    Abstract: MB8464-15 MB8464-12L m88464a-10ll-x MCM6264-20 motorola 6264 ram M88464A MCM60L64 mcm6164 MB8464A-10L
    Text: - 90 64 K X m % ít * OC -Í CMOS -y -f .V ÿ S t a t i c $ RAM 8 192 tí x % 8) 28PIN TAAC max (ns) TCAC nax (ns) TOE nax (ns) TOH min (ns) TOD max (ns) TWP min (ns) TDS min (ns) TDH min (ns) TWD min (ns) TUR max (ns) V D D or V C C I DD (V) (mA) 6264 X t) [*typ]


    OCR Scan     		PDF 28PIN MB81C76A-45 MB82B78-15 MB82B78-20 MB842 MCM6264-15 MCM6264-20 MCH6264C-10 MCM6264C-12 MCM62G4C-20 MB8464-15L MB8464-15 MB8464-12L m88464a-10ll-x motorola 6264 ram M88464A MCM60L64 mcm6164 MB8464A-10L

    74c920

    Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
    Text: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous


    OCR Scan     		PDF 256x4, HM-6508 HM-6518 HM-6551 HM-6561 74C929 74C930 74C920 HM-6504 74c920 ram 6164 6116 RAM 2116 ram 2064 ram 4016 RAM 4045 RAM 6264 cmos ram

    STATIC RAM 6264

    Abstract: RAM 6264 6264 EPROM 6116 RAM 6116H 6264 RAM 6264 cmos ram 6264 static RAM rom 6116 6116 static RAM 150ns
    Text: "SILICON I N T E G R A T O ETE D BssaaflT oaaaoio 7 ‘T-mp-a.s- CMOS STATIC RAM SIS 6116/SIS 6116H 2Kx8 High Speed CMOS Static RAM FEATURE •Single + 5V supply and high density 24 pin package •Access Time: 3 d / 45/55/70ns Max. SIS 6116H 100/120/150ns Max. (SIS 6116)


    OCR Scan     		PDF 6116/SIS 6116H 45/55/70ns 6116H) 100/120/150ns 250mW STATIC RAM 6264 RAM 6264 6264 EPROM 6116 RAM 6264 RAM 6264 cmos ram 6264 static RAM rom 6116 6116 static RAM 150ns

    organizational structure samsung

    Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
    Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116


    OCR Scan     		PDF LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CYPRESS CY6264 8K x 8 Static RAM Features • 55,70 ns access times • CMOS for optimum speed/power • Easy memory expansion with CEj, CE2, and OE features • TTL-compatible inputs and outputs • Automatic power-down when dese­ lected F unctional D escription


    OCR Scan     		PDF CY6264 Y6264 CY6264 330-mil-wide CY6264â 28-Lead 330-Mil

    M6264

    Abstract: MCM6264 MCM6264J35 MCM6264P motorola 6264 ram MCM6264J30 MCM6284
    Text: MO TOR OLA SC M EM ORY/ AS IC IME 0 I a3t>7S51 0070^15 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6264 8K x 8 Bit Fast Static RAM The MCM6264 Is a 66,536 bit static random access memory organized as 8192 words of 8 bits, fabricated using Motorola's high-performance silicon-gate CM OS technology.


    OCR Scan     		PDF MCM6264 MCM6264 MCM6264P30 MCM6264P3S MCM6264P45 MCM6264P55 MCM6264WP30 MCM6264WP35 M6264WP45 MCM6264WP55 M6264 MCM6264J35 MCM6264P motorola 6264 ram MCM6264J30 MCM6284

    4464 ram

    Abstract: us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory
    Text: In d u s try CMOS RAM C ross R eference H A R R IS C M O S R A M s F U J ID E SC RIPTIO N HARR IS AM O EDI rrsu H IT­ AC H I ID T M ITS U ­ BISHI M OT­ O R O LA N AT­ IO N A L 6508 6508 74C 929 6518 6518 74C 930 NEC O KI H A R R IS / RCA TO SH­ IB A N M O S,


    OCR Scan     		PDF 8816H 4464 ram us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory

    RAM 6264

    Abstract: 6264 static RAM STATIC RAM 6264 6264 cmos ram
    Text: INSTRUMENTS USA • • • • • • • Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programming cycles Standard 28-pin JEDEC pin out GR881 is 8 kilobyte of non-volatile memory which is pin-compatible


    OCR Scan     		PDF 28-pin GR881 A0-A12 GR881. RAM 6264 6264 static RAM STATIC RAM 6264 6264 cmos ram

    NVR8

    Abstract: GREENWICH INSTRUMENTS
    Text: GREENWICH 8K X 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • • NVR8 Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM No limit to number of programming cycles Fits standard 28-pin socket


    OCR Scan     		PDF 28-pin NVR8 GREENWICH INSTRUMENTS

    STATIC RAM 6264

    Abstract: 6264 RAM CI 6264 RAM 6264 6264 static RAM NEC 200 6264 6264 28pin UPD4464G-12L UPD4464G-15
    Text: 94 6 4 K X m & ít CC> UPD4368CRAA-20 NEC uP04464G-12 NEC UPD4464G-12L TAAC « NEC 0— 70 TCAC max ns nax (ns) 20 20 120 120 TOE max (ns) CMOS 4 -, + TOH min (ns) y TOD nax (ns) y TWP min (ns) S t a t i c It TDS min (ns) TDH min (ns) TWD min (ns) TWR sa>:


    OCR Scan     		PDF 28PIN uP04368CR/LA-20 UP04464G-12 UPD4464G-12L UPD4464G-15 uPD4464G-15L STATIC RAM 6264 6264 RAM CI 6264 RAM 6264 6264 static RAM NEC 200 6264 6264 28pin UPD4464G-12L

    mk48z30

    Abstract: external RAM ic 6264 CI 6264 SRAM 6264 application note 6264 cmos ram STATIC RAM 6264 SRAM 6264 ic 6264 6264 SRAM
    Text: MK48Z30/30A B -10/12/15 f Z J SG S-IU O M SO N ^7# RfflD(g[S(Q)IILi in^®ROO©i 32 K X 8 ZEROPOWER RAM ADVANCE DATA • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. 1 ■ READ-CYCLE TIME EQUALS WRITE-CYCLE


    OCR Scan     		PDF MK48Z30/30A MK48Z30A: 28-DIP MK48Z30-B10 MK48Z30-B12 MK48Z30-815 MK48Z30A-B10 MK48Z30A-B12 MK48Z30A-B15 mk48z30 external RAM ic 6264 CI 6264 SRAM 6264 application note 6264 cmos ram STATIC RAM 6264 SRAM 6264 ic 6264 6264 SRAM

    Untitled

    Abstract: No abstract text available
    Text: GREENWICH 8K x 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • • • • GR881 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM


    OCR Scan     		PDF GR881 28-pin GR881 GR881.

    CXK5864PN-15L

    Abstract: CXK5864PN-12L CXK5864PN-12 CXK5864PN-15 CXK5863P-35 CXK5864-M-12 sony s 120-a CXK5864AM-10L CXK5864M-12L CXK5864P-12L
    Text: - 85 6 4 K 'i X m £ it £ CMOS •/ ÍSSEISB! °C> TM C max (ns TOH TCAC max (ns) TOE max (ns) min (ns) f- > TOD max (ns) i/ S t a t i c RAM ( 8 1 9 2 x 8) » % TWF min (ns) TfS min (ns) TDH min (ns) TWD min (ns) TWft max (ns) V r D or V C C <V) 2 8 P I N


    OCR Scan     		PDF 28PIN CL3S64R/RM/RS-15 CL3664RL/TMI/RSL-12 CL3B64RL/RM1 /RSL-15 CXK5865P-55L CY7C185- 12PC/VC/DCAC CY7C186-12PC/VC/DCAC CY7C186-25 CXK5864PN-15L CXK5864PN-12L CXK5864PN-12 CXK5864PN-15 CXK5863P-35 CXK5864-M-12 sony s 120-a CXK5864AM-10L CXK5864M-12L CXK5864P-12L