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    6264 CMOS RAM Search Results

    6264 CMOS RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    5962-8670505RA Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation
    5962-8670511UA Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation
    5962-8861103LA Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation

    6264 CMOS RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GR881

    Abstract: STATIC RAM 6264 6264 static RAM 6264 ram ram 6264 8k static ram 6264 6264* ram 6264 cmos ram 6264 8k
    Text: GR881 8K x 8 NON-VOLATILE RAM GR881 (8K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR881 is a 8192 word by 8 bits (8K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.


    Original     		PDF GR881 GR881 2000/95/EC STATIC RAM 6264 6264 static RAM 6264 ram ram 6264 8k static ram 6264 6264* ram 6264 cmos ram 6264 8k

    GR881-H

    Abstract: STATIC RAM 6264 6264 ram RAM 6264 6264 cmos ram 6264 8k GR88-H1
    Text: GR881-H 8K x 8 NON-VOLATILE RAM GR881-H (8K x 8) NON-VOLATILE RAM READ CYCLE > Address < CE t OH > t ACC > < tACS > tOLZ t> < <CLZ> DOUT < > t OHZ > WRITE CYCLE 1 t WC < Read Cycle Parameter Read cycle time Access time CE to output valid OE to output valid


    Original     		PDF GR881-H A0-A12 GR881-H STATIC RAM 6264 6264 ram RAM 6264 6264 cmos ram 6264 8k GR88-H1

    AS6C6264A

    Abstract: 6264 SRAM STATIC RAM 6264 AS6C6264A-70PCN SRAM 6264 6264 28pin 6264 static RAM AS6C6264 AS6C6264A-70PIN sram 6800
    Text: MARCH 2009 AS6C6264A 8K X 8 BIT LOW POWER CMOS SRAM FEATURES DESCRIPTION •   The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention


    Original     		PDF AS6C6264A AS6C6264A MARCH/2009 6264 SRAM STATIC RAM 6264 AS6C6264A-70PCN SRAM 6264 6264 28pin 6264 static RAM AS6C6264 AS6C6264A-70PIN sram 6800

    Digital IC tester

    Abstract: MC140 Datasheet IC 244, 245, 373, 374 ic 8255 z80 8255 MC140 LIST OF 74 IC SERIES 8253/8254 IC 2816 IC 8155
    Text: IC Testers VPL-DICT Digital IC Tester VPL-DICT is aHand-Held version, designed as a powerful tool for manufacturers, servicing engineers, R&D personnels to test a wide range of Digital IC's. FEATURES l Tests most of the 6 to 40 pin ICs in DIP package. The list


    Original     		PDF 8088/8085/Z80/6502) MC140) MC140 MC145 Delhi-110092. Digital IC tester MC140 Datasheet IC 244, 245, 373, 374 ic 8255 z80 8255 MC140 LIST OF 74 IC SERIES 8253/8254 IC 2816 IC 8155

    d 5072 transistor

    Abstract: transistor mc140 817 OPTO-coupler 817 OPTO microprocessor 8255 application seven segment opto 817 MC140 Datasheet IC 8155 8282/8283 eprom 8243
    Text: IC Testers 70 71 72 73 75 76 77 78 81 82 85 86 89 93 94 95 96 97 98 99 101 102 103 106 107 109 110 147 160 161 162 163 174 175 192 193 194 195 VPL-UICTS Universal IC Tester CMOS ICs MC140 : MC140 FEATURES q Tests most of the 6 to 40 pin ICs in DIP package. The list


    Original     		PDF MC140) MC140 8088/8085/Z80/6502) OperatN2003 ULN2004 Delhi-110092. d 5072 transistor transistor mc140 817 OPTO-coupler 817 OPTO microprocessor 8255 application seven segment opto 817 MC140 Datasheet IC 8155 8282/8283 eprom 8243

    cmos ic 4584

    Abstract: IC CD4066 ic 74xx LM714 74xxx LM228 LM2110 IC 74xx series TIL112 IC ha17555
    Text: IC Testers 256 257 258 259 260 266 273 279 280 283 290 293 295 298 299 322 350 352 353 363 364 365 366 367 368 373 374 375 377 378 379 390 393 395 425 426 445 447 490 534 540 541 563 564 573 574 640 641 642 643 645 670 688 VPL-UICT CMOS ICs RCA make CDxxxxx 40xx & 40xxx Series:


    Original     		PDF 40xxx Delhi-110092. cmos ic 4584 IC CD4066 ic 74xx LM714 74xxx LM228 LM2110 IC 74xx series TIL112 IC ha17555

    Untitled

    Abstract: No abstract text available
    Text: H Y 6264 A-I S e r ie s •HYUNDAI 8Kx 8-bit CMOS SRAM DESCRIPTION Tiie HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY6264A-I 1DB02-11-MAY94 4b75Gflfl 00Q3b HY6264ALP-I HY6264ALLP-I HY6264AU-I

    MB8464-15L

    Abstract: MB8464-15 MB8464-12L m88464a-10ll-x MCM6264-20 motorola 6264 ram M88464A MCM60L64 mcm6164 MB8464A-10L
    Text: - 90 64 K X m % ít * OC -Í CMOS -y -f .V ÿ S t a t i c $ RAM 8 192 tí x % 8) 28PIN TAAC max (ns) TCAC nax (ns) TOE nax (ns) TOH min (ns) TOD max (ns) TWP min (ns) TDS min (ns) TDH min (ns) TWD min (ns) TUR max (ns) V D D or V C C I DD (V) (mA) 6264 X t) [*typ]


    OCR Scan     		PDF 28PIN MB81C76A-45 MB82B78-15 MB82B78-20 MB842 MCM6264-15 MCM6264-20 MCH6264C-10 MCM6264C-12 MCM62G4C-20 MB8464-15L MB8464-15 MB8464-12L m88464a-10ll-x motorola 6264 ram M88464A MCM60L64 mcm6164 MB8464A-10L

    74c920

    Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
    Text: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous


    OCR Scan     		PDF 256x4, HM-6508 HM-6518 HM-6551 HM-6561 74C929 74C930 74C920 HM-6504 74c920 ram 6164 6116 RAM 2116 ram 2064 ram 4016 RAM 4045 RAM 6264 cmos ram

    STATIC RAM 6264

    Abstract: RAM 6264 6264 EPROM 6116 RAM 6116H 6264 RAM 6264 cmos ram 6264 static RAM rom 6116 6116 static RAM 150ns
    Text: "SILICON I N T E G R A T O ETE D BssaaflT oaaaoio 7 ‘T-mp-a.s- CMOS STATIC RAM SIS 6116/SIS 6116H 2Kx8 High Speed CMOS Static RAM FEATURE •Single + 5V supply and high density 24 pin package •Access Time: 3 d / 45/55/70ns Max. SIS 6116H 100/120/150ns Max. (SIS 6116)


    OCR Scan     		PDF 6116/SIS 6116H 45/55/70ns 6116H) 100/120/150ns 250mW STATIC RAM 6264 RAM 6264 6264 EPROM 6116 RAM 6264 RAM 6264 cmos ram 6264 static RAM rom 6116 6116 static RAM 150ns

    4464 ram

    Abstract: us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory
    Text: In d u s try CMOS RAM C ross R eference H A R R IS C M O S R A M s F U J ID E SC RIPTIO N HARR IS AM O EDI rrsu H IT­ AC H I ID T M ITS U ­ BISHI M OT­ O R O LA N AT­ IO N A L 6508 6508 74C 929 6518 6518 74C 930 NEC O KI H A R R IS / RCA TO SH­ IB A N M O S,


    OCR Scan     		PDF 8816H 4464 ram us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory

    RAM 6264

    Abstract: 6264 static RAM STATIC RAM 6264 6264 cmos ram
    Text: INSTRUMENTS USA • • • • • • • Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programming cycles Standard 28-pin JEDEC pin out GR881 is 8 kilobyte of non-volatile memory which is pin-compatible


    OCR Scan     		PDF 28-pin GR881 A0-A12 GR881. RAM 6264 6264 static RAM STATIC RAM 6264 6264 cmos ram

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CYPRESS CY6264 8K x 8 Static RAM Features • 55,70 ns access times • CMOS for optimum speed/power • Easy memory expansion with CEj, CE2, and OE features • TTL-compatible inputs and outputs • Automatic power-down when dese­ lected F unctional D escription


    OCR Scan     		PDF CY6264 Y6264 CY6264 330-mil-wide CY6264â 28-Lead 330-Mil

    M6264

    Abstract: MCM6264 MCM6264J35 MCM6264P motorola 6264 ram MCM6264J30 MCM6284
    Text: MO TOR OLA SC M EM ORY/ AS IC IME 0 I a3t>7S51 0070^15 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6264 8K x 8 Bit Fast Static RAM The MCM6264 Is a 66,536 bit static random access memory organized as 8192 words of 8 bits, fabricated using Motorola's high-performance silicon-gate CM OS technology.


    OCR Scan     		PDF MCM6264 MCM6264 MCM6264P30 MCM6264P3S MCM6264P45 MCM6264P55 MCM6264WP30 MCM6264WP35 M6264WP45 MCM6264WP55 M6264 MCM6264J35 MCM6264P motorola 6264 ram MCM6264J30 MCM6284

    mk48z30

    Abstract: external RAM ic 6264 CI 6264 SRAM 6264 application note 6264 cmos ram STATIC RAM 6264 SRAM 6264 ic 6264 6264 SRAM
    Text: MK48Z30/30A B -10/12/15 f Z J SG S-IU O M SO N ^7# RfflD(g[S(Q)IILi in^®ROO©i 32 K X 8 ZEROPOWER RAM ADVANCE DATA • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. 1 ■ READ-CYCLE TIME EQUALS WRITE-CYCLE


    OCR Scan     		PDF MK48Z30/30A MK48Z30A: 28-DIP MK48Z30-B10 MK48Z30-B12 MK48Z30-815 MK48Z30A-B10 MK48Z30A-B12 MK48Z30A-B15 mk48z30 external RAM ic 6264 CI 6264 SRAM 6264 application note 6264 cmos ram STATIC RAM 6264 SRAM 6264 ic 6264 6264 SRAM

    Untitled

    Abstract: No abstract text available
    Text: GREENWICH 8K x 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • • • • GR881 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM


    OCR Scan     		PDF GR881 28-pin GR881 GR881.

    KM6264BL-10L

    Abstract: 6264bl km6264 6264 SRAM
    Text: KM6264BÜKM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 7 0 ,1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) :10,«W (typ) LVersion : W (typ) LL.Version Operating:55mW/1 MHz • Single 5V±10% power supply


    OCR Scan     		PDF KM6264BÃ KM6264BL-L 120ns 55mW/1 KM6264BLP/BLP-L 28-DIP-600B KM6264BLS/BLS-L 28-DIP-300 KM6264BLG/BLG-L KM6264BLVBL-L KM6264BL-10L 6264bl km6264 6264 SRAM

    CXK5864PN-15L

    Abstract: CXK5864PN-12L CXK5864PN-12 CXK5864PN-15 CXK5863P-35 CXK5864-M-12 sony s 120-a CXK5864AM-10L CXK5864M-12L CXK5864P-12L
    Text: - 85 6 4 K 'i X m £ it £ CMOS •/ ÍSSEISB! °C> TM C max (ns TOH TCAC max (ns) TOE max (ns) min (ns) f- > TOD max (ns) i/ S t a t i c RAM ( 8 1 9 2 x 8) » % TWF min (ns) TfS min (ns) TDH min (ns) TWD min (ns) TWft max (ns) V r D or V C C <V) 2 8 P I N


    OCR Scan     		PDF 28PIN CL3S64R/RM/RS-15 CL3664RL/TMI/RSL-12 CL3B64RL/RM1 /RSL-15 CXK5865P-55L CY7C185- 12PC/VC/DCAC CY7C186-12PC/VC/DCAC CY7C186-25 CXK5864PN-15L CXK5864PN-12L CXK5864PN-12 CXK5864PN-15 CXK5863P-35 CXK5864-M-12 sony s 120-a CXK5864AM-10L CXK5864M-12L CXK5864P-12L

    Untitled

    Abstract: No abstract text available
    Text: ICS5341 GENDAC Integrated Circuit Systems, Inc. Advance Information 16-Bit Integrated Clock-LUT-DAC General Description Features The ICS5341 GENDAC is a combination of dual program­ mable clock generators, a 256 x 18-bit RAM, and a triple 8-bit video DAC. The GENDAC supports 8-bit pseudo


    OCR Scan     		PDF ICS5341 16-Bit ICS5341 18-bit 15-bit, 24-bit ICS5341V H-100

    MB81C78A-35

    Abstract: LH5164-10 MB81C78A MB81C78-45 LH5268A-10LL LH5164L-15 LC3664BL-10 LH5164D LH5164D/N-10L LC3664BL-12
    Text: CMOS 6 4 K m £ tt £ ¡á£ÍEH OC X TAAC •ax ns) TCAC (ns) ■f y ? S t a t i c RAM ( 81 9 2 x 8 ) ft ft TOE ■ax (ns) TOH min (ns) TOD max (ns) TWP min (ns.) TDS IE (ns) TDH min (ns) TWD min (ns) TWR max (ns) V I or V C C (V) 2 8 P I N IDO max (mA)


    OCR Scan     		PDF 28PIN LC3664R/RL-10 LC3664RM/RML-10 64RS/RSL-10 LC36640-70 M5M5165P-70L M5M5178P-35 M5M5178P-45 M5M5178P-55 MB81C78-45 MB81C78A-35 LH5164-10 MB81C78A LH5268A-10LL LH5164L-15 LC3664BL-10 LH5164D LH5164D/N-10L LC3664BL-12

    FCB61C65-70

    Abstract: HM6264ALP-10 HM6264ALP-12 FCB61C65-45 DS1225AD-2G FCB61C65L DPS9264-120 DPS9264-150 DS1225Y DS1225AB-20
    Text: - 86 - m £ ít % CC TAAC max ns) TCAC max (ns) 6 4 K CMOS X + A TOE max (ns) TOH min (ns) V TOD (ns) '/ S t a t i c RAM (81 9 2 X 8 ) Í# f t TiP min (ns) TDS min (ns) m TDH min (ns) TWD min (ns) TWR ma): (ns) V D D or V C C (V) 2 8 P I N ÎDD max (mA)


    OCR Scan     		PDF 28PIN DPS9264-120 DPS9264-150 DS1225AB-15 DS1225AB-20 HM6264AFP-12 HM6264AFP-15 HM6264ALFP-10 HM6264ALFP-12 HM6264A1FP15 FCB61C65-70 HM6264ALP-10 HM6264ALP-12 FCB61C65-45 DS1225AD-2G FCB61C65L DS1225Y

    mk6264

    Abstract: No abstract text available
    Text: SGS-THOMSON IM MK6264 N,S 70/120 MK6264L(N,S)70/120 MK6264U(N,S)70/120 64K (8K x 8-BIT) CMOS STATIC RAM FEATURES □ 70 And 120 ns Address Access Time □ Equal Access And Cycle Times □ Static Operation * No Clocks Or Timing Strobes Required □ Low Vcc Data Retention 2 Volts


    OCR Scan     		PDF MK6264 MK6264L MK6264U 28-Pin DIP-28 SOIC-28 A0-A12

    ICS5341

    Abstract: external RAM ic 6264 Tseng Labs
    Text: ICS5341 GENDAC Advance Information Integrated Circuit Systems, Inc. 16-Bit Integrated Clock-LUT-DAC General Description Features The ICS5341 GENDAC is a combination of dual program­ mable clock generators, a 256 x 18-bit RAM, and a triple 8-bit video DAC. The GENDAC supports 8-bit pseudo


    OCR Scan     		PDF ICS5341 16-Bit 18-bit 15-bit, 24-bit S5341V H-100 external RAM ic 6264 Tseng Labs

    MCM6264

    Abstract: mcm6264p20 MCM6264BP25 MCM6264BP
    Text: MOTOROLA H SEM ICO NDUCTO R TECHNICAL DATA MCM6264 8K x 8 Bit Fast Static RAM The MCM6264 is fabricated using Motorola's high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or tim ­ ing strobes, while CMOS circuitry reduces power consum ption and provides tor


    OCR Scan     		PDF MCM6264 MCM6264 300-mil CM6264P15 MCM6264P20 MCM6264BP25 MCM6264BP35 MCM6264NJ15 MCM6264BP