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    6260 THERMAL Search Results

    6260 THERMAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    6260 THERMAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ECX-6260-39.000M RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6260 -39.000M Series Ecliptek Custom Crystal Nominal Frequency 39.000MHz ELECTRICAL SPECIFICATIONS


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    PDF ECX-6260-39 ECX-6260 000MHz

    Untitled

    Abstract: No abstract text available
    Text: ECX-6260-39.000M TR RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6260 -39.000M TR Series Ecliptek Custom Crystal Packaging Options Tape & Reel


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    PDF ECX-6260-39 ECX-6260 000MHz

    infineon 6260

    Abstract: P-DSO-36-12 400 wk1 C505C TWT Wiring C164C GPS05123 P-DSO-28-6 TLE6260
    Text: confidential System Basis Chip TLE 6260 Preliminary Data Sheet 1 Overview 1.1 Features • • • • • • • • • • • • • • • • Fault tolerant differential CAN-transceiver CAN data transmission rate up to 125 kBaud Bus failure management


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    PDF P-DSO-28-6 P-DSO-36-12 infineon 6260 P-DSO-36-12 400 wk1 C505C TWT Wiring C164C GPS05123 P-DSO-28-6 TLE6260

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1021UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS


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    PDF D1021UK 400MHz 19swg

    D1021UK

    Abstract: No abstract text available
    Text: TetraFET D1021UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS


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    PDF D1021UK 400MHz 19swg D1021UK

    D1021UK

    Abstract: No abstract text available
    Text: TetraFET D1021UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS


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    PDF D1021UK 400MHz 19swg D1021UK

    6260G

    Abstract: Electronic Volume Controller IC MS6260 MS6260MGTR MS6260MGU MS6260MTR MS6260MU MSOP10
    Text: MOSA MS6260 Gain And Attenuation Volume Controller IC Gain and Attenuation Volume Controller IC One Set of Stereo Input, Low voltage Gain and Attenuation 15~-79dB, Good PSRR FEATURES APPLICATIONS ‧Operation range: 2.7V~5.5V ‧Low power consumption ‧Gain/Attenuation: 15dB to –79dB at 1dB/step


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    PDF MS6260 -79dB, MS6260 MSOP10 6260G Electronic Volume Controller IC MS6260MGTR MS6260MGU MS6260MTR MS6260MU

    Untitled

    Abstract: No abstract text available
    Text: AC Power Transducer DIN RAIL / PANEL MOUNT, ACTIVE / REACTIVE The CR6200 Series, Power Transducers and Transmitters are designed to provide a controlled output that is proportional to the average power. These devices are specifically targeted to provide an efficient solution to most power sensing needs.


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    PDF CR6200 CR6210 CR6211 CR6220 CR6221 CR6240 CR6241 CR6250 CR6251 CR6260

    Untitled

    Abstract: No abstract text available
    Text: AC Power Transducer DIN RAIL / PANEL MOUNT, ACTIVE / REACTIVE The CR6200 Series, Power Transducers and Transmitters are designed to provide a controlled output that is proportional to the average power. These devices are specifically targeted to provide an efficient solution to most power sensing needs.


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    PDF CR6200 CR6210 CR6211 CR6220 CR6221 CR6241 CR6250 CR6251 CR6260 CR6261

    HP MMIC

    Abstract: MSA-0185 A01 MMIC MSA0185
    Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0185 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 17.5 dB Typical at 0.5 GHz • Unconditionally Stable k>1 • Low Cost Plastic Package Description


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    PDF MSA-0185 MSA-0185 HP MMIC A01 MMIC MSA0185

    W7808

    Abstract: cwdm add drop Demultiplexers W7800 1x16 DeMux 1x8 DeMux
    Text: a8e re AdLib OCR Evaluation systems Advance Data Sheet February 2002 W7800-Type 20 nm Thin-Film, Coarse Wavelength-Division Multiplexers and Demultiplexers Applications . CWDM transmission . CWDM-based add/drop multiplexing . Wavelength-selective routing Description


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    PDF W7800-Type DS02-136OCN W7808 cwdm add drop Demultiplexers W7800 1x16 DeMux 1x8 DeMux

    M6-C16H

    Abstract: SBC-845D-VEA ePCI-200 M6C16H M6-C16 MPGA478 SOCKET ATI MOBILITY RADEON M6-C16H RADEON Mobility M6 RADEON ATI Mobility Radeon
    Text: ePCI-200 Next generation Pentium 4 processing, the natural evolution from the popular PICMG 1.0 PCI-ISA specification Intel Pentium® 4 Dual Bus PICMG 1.2 ePCI-X SHB Bringing PCI-X technology to embedded applications TM The ePCI-200 will reach new levels of performance in PICMG CPU boards.


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    PDF ePCI-200 ePCI-200 478-pin 133MHz, SBC-845D-VEA 15/CISPR22, EN55022/EN55024 M6-C16H SBC-845D-VEA M6C16H M6-C16 MPGA478 SOCKET ATI MOBILITY RADEON M6-C16H RADEON Mobility M6 RADEON ATI Mobility Radeon

    Untitled

    Abstract: No abstract text available
    Text: AC Power Transducer DIN RAIL / PANEL MOUNT, ACTIVE / REACTIVE The CR6200 Series, Power Transducers and Transmitters are designed to provide a controlled output that is proportional to the average power. These devices are specifically targeted to provide an efficient solution to most power sensing needs.


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    PDF CR6200 CR6210 CR6211 CR6220 CR6221 CR6240 CR6241 CR6250 CR6251 CR6260

    EBGA368

    Abstract: SAVAGE4 kontron viper SR-232 ePCI-200 Kontron VT100 power supply atx viper SR232
    Text:         ePCI-102 ePCI half-size SBC VIA Eden up to 733 MHz or VIA Antaur up to 1.2 GHz Up to 512 MByte SDRAM 10/100 Base-T Ethernet USB 2.0 Sound If it´s Embedded, it´s Kontron. ePCI-102 Product Overview  Technical Information


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    PDF ePCI-102 EBGA368 168-pin PC133 32-bit 64-bit ePCI-102supports SAVAGE4 kontron viper SR-232 ePCI-200 Kontron VT100 power supply atx viper SR232

    Untitled

    Abstract: No abstract text available
    Text: PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


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    PDF PTFA211801E PTFA211801E 180-watt, H-36260-2

    Logic Level N-Channel Power MOSFET

    Abstract: AN7254 AN7260 RFP2N20L TB334
    Text: RFP2N20L Data Sheet July 1999 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as


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    PDF RFP2N20L RFP2N20L Logic Level N-Channel Power MOSFET AN7254 AN7260 TB334

    6250G

    Abstract: BOSCH cross reference IC BOSCH ISO 9141 6258G TLE 6250G 6261G High Speed CAN Transceiver IC Philips 6260G automotive bosch ic driver can bus chip bosch
    Text: Transceiver Products Johann Winter AI AP SYS PM Page 1 Smart Power System IC‘s High Speed CAN Transceiver 3.3 3.3VVlogic logic version version TLE TLE6250GV33 6250GV33 coming comingsoon soon 55VVlogic logic version version TLE 6250 G Pin Pin compatible compatible


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    PDF 6250GV33 6250G 150mA PCA82C250 PCA82C252 TJA1050 TJA1053 6252G 6250G BOSCH cross reference IC BOSCH ISO 9141 6258G TLE 6250G 6261G High Speed CAN Transceiver IC Philips 6260G automotive bosch ic driver can bus chip bosch

    Untitled

    Abstract: No abstract text available
    Text: TENTATIVE All information in this technical data sheet is tentative and subject to change without notice. Preliminary 5.7”VGA TECHNICAL SPECIFICATION AA057VF12 MITSUBISHI ELECTRIC Corp. Date: Oct.18,’11 MITSUBISHI Confidential 1/22 AA057VF12_02_00 CONTENTS


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    PDF AA057VF12 AA057VF12

    MSA0185

    Abstract: No abstract text available
    Text: What HEWLETT* mLliM PA C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0185 Features • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 17.5 dB Typical at 0.5 GHz • Unconditionally Stable k > l • Low Cost Plastic Package


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    PDF MSA-0185 MSA0185

    Untitled

    Abstract: No abstract text available
    Text: H EW L E T T 1 "HM PA CK A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0185 Features • C a sca d a b le 5 0 Q G ain B lo ck • 3 dB B an d w id th: DC to 1.0 GHz • H igh Gain: designed for use as a general purpose 50 i l gain block. Typical


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    PDF MSA-0185

    IRFF430R

    Abstract: IRFF431R IRFF432R IRFF433R
    Text: Rugged Power MOSFETs File Number 2031 IRFF430R, IRFF431R, IRFF432R, IRFF433R Avalanche Energy Rated N-Channel Power MOSFETs 2.25A and 2.75A, 450V-500V fDs on = 1 .50 and 2.00 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated ■ SO A is power-dissipation lim ited


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    PDF IRFF430R, IRFF431R, IRFF432R, IRFF433R 50V-500V IRFF432R IRFF433R 92C3-42MO IRFF430R IRFF431R

    FL411

    Abstract: zero crossing triac parallel triac
    Text: SIEMENS IL4116 700vIL4117 8oovIL4118 600 V ZERO VOLTAGE CROSSING TRIAC DRIVER OPTOCOUPLER FEATURES • High Input Sensitivity Ift=1.3 mA, PF=1.0 lFT=3.S mA, Typical P F < 1.0 • Zero Voltage Crossing • 600/700/800 V Blocking Voltage • 300 mA On-State Current


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    PDF IL4116 vIL4117 ovIL4118 E52744 IL411 FL411 zero crossing triac parallel triac

    RC5534NB

    Abstract: RC5534ANB RM5534 RC5534ADE RC5534A raytheon RC5534 s7 200 noise Bt141 rc5534
    Text: RAYTHEON-. SEMICONDUCTOR S7 p r o d u c t s p e c ific a tio n s 7 5 9 7 3 6 0 RAYTHEON CO* Raytheon D E | 7 ST 73 bü^ DD0 41 ô 1 û LINEAR INTEGRATED CIRCUITS ' 57C 0 4 6 8 9 High Performance Low Noise Operational Amplifier Features • Small signal bandwidth — 10MHz


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    PDF RC5534 10MHz 600X1, 10kHz 200kHz 7ST73t RC5534NB RC5534ANB RM5534 RC5534ADE RC5534A raytheon RC5534 s7 200 noise Bt141 rc5534

    Untitled

    Abstract: No abstract text available
    Text: RFP30N06LE, RF1S30N06LESM Semiconductor April 1999 Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


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    PDF RFP30N06LE, RF1S30N06LESM TA49027. 1e-30 07e-3 03e-7) 38e-3 64e-5) 75e-3