Untitled
Abstract: No abstract text available
Text: ECX-6260-39.000M RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6260 -39.000M Series Ecliptek Custom Crystal Nominal Frequency 39.000MHz ELECTRICAL SPECIFICATIONS
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ECX-6260-39
ECX-6260
000MHz
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Untitled
Abstract: No abstract text available
Text: ECX-6260-39.000M TR RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6260 -39.000M TR Series Ecliptek Custom Crystal Packaging Options Tape & Reel
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ECX-6260-39
ECX-6260
000MHz
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infineon 6260
Abstract: P-DSO-36-12 400 wk1 C505C TWT Wiring C164C GPS05123 P-DSO-28-6 TLE6260
Text: confidential System Basis Chip TLE 6260 Preliminary Data Sheet 1 Overview 1.1 Features • • • • • • • • • • • • • • • • Fault tolerant differential CAN-transceiver CAN data transmission rate up to 125 kBaud Bus failure management
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P-DSO-28-6
P-DSO-36-12
infineon 6260
P-DSO-36-12
400 wk1
C505C
TWT Wiring
C164C
GPS05123
P-DSO-28-6
TLE6260
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Untitled
Abstract: No abstract text available
Text: TetraFET D1021UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS
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D1021UK
400MHz
19swg
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D1021UK
Abstract: No abstract text available
Text: TetraFET D1021UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS
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D1021UK
400MHz
19swg
D1021UK
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D1021UK
Abstract: No abstract text available
Text: TetraFET D1021UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS
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D1021UK
400MHz
19swg
D1021UK
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6260G
Abstract: Electronic Volume Controller IC MS6260 MS6260MGTR MS6260MGU MS6260MTR MS6260MU MSOP10
Text: MOSA MS6260 Gain And Attenuation Volume Controller IC Gain and Attenuation Volume Controller IC One Set of Stereo Input, Low voltage Gain and Attenuation 15~-79dB, Good PSRR FEATURES APPLICATIONS ‧Operation range: 2.7V~5.5V ‧Low power consumption ‧Gain/Attenuation: 15dB to –79dB at 1dB/step
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MS6260
-79dB,
MS6260
MSOP10
6260G
Electronic Volume Controller IC
MS6260MGTR
MS6260MGU
MS6260MTR
MS6260MU
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Untitled
Abstract: No abstract text available
Text: AC Power Transducer DIN RAIL / PANEL MOUNT, ACTIVE / REACTIVE The CR6200 Series, Power Transducers and Transmitters are designed to provide a controlled output that is proportional to the average power. These devices are specifically targeted to provide an efficient solution to most power sensing needs.
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CR6200
CR6210
CR6211
CR6220
CR6221
CR6240
CR6241
CR6250
CR6251
CR6260
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Untitled
Abstract: No abstract text available
Text: AC Power Transducer DIN RAIL / PANEL MOUNT, ACTIVE / REACTIVE The CR6200 Series, Power Transducers and Transmitters are designed to provide a controlled output that is proportional to the average power. These devices are specifically targeted to provide an efficient solution to most power sensing needs.
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CR6200
CR6210
CR6211
CR6220
CR6221
CR6241
CR6250
CR6251
CR6260
CR6261
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HP MMIC
Abstract: MSA-0185 A01 MMIC MSA0185
Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0185 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 17.5 dB Typical at 0.5 GHz • Unconditionally Stable k>1 • Low Cost Plastic Package Description
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MSA-0185
MSA-0185
HP MMIC
A01 MMIC
MSA0185
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W7808
Abstract: cwdm add drop Demultiplexers W7800 1x16 DeMux 1x8 DeMux
Text: a8e re AdLib OCR Evaluation systems Advance Data Sheet February 2002 W7800-Type 20 nm Thin-Film, Coarse Wavelength-Division Multiplexers and Demultiplexers Applications . CWDM transmission . CWDM-based add/drop multiplexing . Wavelength-selective routing Description
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W7800-Type
DS02-136OCN
W7808
cwdm add drop
Demultiplexers
W7800
1x16 DeMux
1x8 DeMux
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M6-C16H
Abstract: SBC-845D-VEA ePCI-200 M6C16H M6-C16 MPGA478 SOCKET ATI MOBILITY RADEON M6-C16H RADEON Mobility M6 RADEON ATI Mobility Radeon
Text: ePCI-200 Next generation Pentium 4 processing, the natural evolution from the popular PICMG 1.0 PCI-ISA specification Intel Pentium® 4 Dual Bus PICMG 1.2 ePCI-X SHB Bringing PCI-X technology to embedded applications TM The ePCI-200 will reach new levels of performance in PICMG CPU boards.
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ePCI-200
ePCI-200
478-pin
133MHz,
SBC-845D-VEA
15/CISPR22,
EN55022/EN55024
M6-C16H
SBC-845D-VEA
M6C16H
M6-C16
MPGA478 SOCKET
ATI MOBILITY RADEON M6-C16H
RADEON Mobility M6
RADEON
ATI Mobility Radeon
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Untitled
Abstract: No abstract text available
Text: AC Power Transducer DIN RAIL / PANEL MOUNT, ACTIVE / REACTIVE The CR6200 Series, Power Transducers and Transmitters are designed to provide a controlled output that is proportional to the average power. These devices are specifically targeted to provide an efficient solution to most power sensing needs.
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CR6200
CR6210
CR6211
CR6220
CR6221
CR6240
CR6241
CR6250
CR6251
CR6260
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EBGA368
Abstract: SAVAGE4 kontron viper SR-232 ePCI-200 Kontron VT100 power supply atx viper SR232
Text: ePCI-102 ePCI half-size SBC VIA Eden up to 733 MHz or VIA Antaur up to 1.2 GHz Up to 512 MByte SDRAM 10/100 Base-T Ethernet USB 2.0 Sound If it´s Embedded, it´s Kontron. ePCI-102 Product Overview Technical Information
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ePCI-102
EBGA368
168-pin
PC133
32-bit
64-bit
ePCI-102supports
SAVAGE4
kontron viper
SR-232
ePCI-200
Kontron
VT100
power supply atx viper
SR232
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Untitled
Abstract: No abstract text available
Text: PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from
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PTFA211801E
PTFA211801E
180-watt,
H-36260-2
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Logic Level N-Channel Power MOSFET
Abstract: AN7254 AN7260 RFP2N20L TB334
Text: RFP2N20L Data Sheet July 1999 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as
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RFP2N20L
RFP2N20L
Logic Level N-Channel Power MOSFET
AN7254
AN7260
TB334
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6250G
Abstract: BOSCH cross reference IC BOSCH ISO 9141 6258G TLE 6250G 6261G High Speed CAN Transceiver IC Philips 6260G automotive bosch ic driver can bus chip bosch
Text: Transceiver Products Johann Winter AI AP SYS PM Page 1 Smart Power System IC‘s High Speed CAN Transceiver 3.3 3.3VVlogic logic version version TLE TLE6250GV33 6250GV33 coming comingsoon soon 55VVlogic logic version version TLE 6250 G Pin Pin compatible compatible
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6250GV33
6250G
150mA
PCA82C250
PCA82C252
TJA1050
TJA1053
6252G
6250G
BOSCH cross reference
IC BOSCH ISO 9141
6258G
TLE 6250G
6261G
High Speed CAN Transceiver IC Philips
6260G
automotive bosch ic driver
can bus chip bosch
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Untitled
Abstract: No abstract text available
Text: TENTATIVE All information in this technical data sheet is tentative and subject to change without notice. Preliminary 5.7”VGA TECHNICAL SPECIFICATION AA057VF12 MITSUBISHI ELECTRIC Corp. Date: Oct.18,’11 MITSUBISHI Confidential 1/22 AA057VF12_02_00 CONTENTS
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AA057VF12
AA057VF12
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MSA0185
Abstract: No abstract text available
Text: What HEWLETT* mLliM PA C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0185 Features • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 17.5 dB Typical at 0.5 GHz • Unconditionally Stable k > l • Low Cost Plastic Package
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MSA-0185
MSA0185
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Untitled
Abstract: No abstract text available
Text: H EW L E T T 1 "HM PA CK A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0185 Features • C a sca d a b le 5 0 Q G ain B lo ck • 3 dB B an d w id th: DC to 1.0 GHz • H igh Gain: designed for use as a general purpose 50 i l gain block. Typical
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MSA-0185
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IRFF430R
Abstract: IRFF431R IRFF432R IRFF433R
Text: Rugged Power MOSFETs File Number 2031 IRFF430R, IRFF431R, IRFF432R, IRFF433R Avalanche Energy Rated N-Channel Power MOSFETs 2.25A and 2.75A, 450V-500V fDs on = 1 .50 and 2.00 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated ■ SO A is power-dissipation lim ited
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IRFF430R,
IRFF431R,
IRFF432R,
IRFF433R
50V-500V
IRFF432R
IRFF433R
92C3-42MO
IRFF430R
IRFF431R
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FL411
Abstract: zero crossing triac parallel triac
Text: SIEMENS IL4116 700vIL4117 8oovIL4118 600 V ZERO VOLTAGE CROSSING TRIAC DRIVER OPTOCOUPLER FEATURES • High Input Sensitivity Ift=1.3 mA, PF=1.0 lFT=3.S mA, Typical P F < 1.0 • Zero Voltage Crossing • 600/700/800 V Blocking Voltage • 300 mA On-State Current
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IL4116
vIL4117
ovIL4118
E52744
IL411
FL411
zero crossing triac
parallel triac
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RC5534NB
Abstract: RC5534ANB RM5534 RC5534ADE RC5534A raytheon RC5534 s7 200 noise Bt141 rc5534
Text: RAYTHEON-. SEMICONDUCTOR S7 p r o d u c t s p e c ific a tio n s 7 5 9 7 3 6 0 RAYTHEON CO* Raytheon D E | 7 ST 73 bü^ DD0 41 ô 1 û LINEAR INTEGRATED CIRCUITS ' 57C 0 4 6 8 9 High Performance Low Noise Operational Amplifier Features • Small signal bandwidth — 10MHz
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RC5534
10MHz
600X1,
10kHz
200kHz
7ST73t
RC5534NB
RC5534ANB
RM5534
RC5534ADE
RC5534A
raytheon RC5534
s7 200 noise
Bt141
rc5534
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Untitled
Abstract: No abstract text available
Text: RFP30N06LE, RF1S30N06LESM Semiconductor April 1999 Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
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RFP30N06LE,
RF1S30N06LESM
TA49027.
1e-30
07e-3
03e-7)
38e-3
64e-5)
75e-3
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