bc327 pnp
Abstract: No abstract text available
Text: BC327 PNP EPITAXIAL PLANAR TRANSISTOR POWER SEMICONDUCTOR Features • • • Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation E A B C Mechanical Data • • • •
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BC327
625mW
MIL-STD-202,
20MHz
DS21708
bc327 pnp
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TO-92 VCEO400V
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR 1 FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage SOT-89 1 TO-92 *Pb-free plating product number: MPSA94L
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MPSA94
-400V
625mW
OT-89
MPSA94L
MPSA94-AB3-R
MPSA94-T92-B
MPSA94-T92-K
TO-92 VCEO400V
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2n3904 npn
Abstract: 2N3904 2N3906 transistor NPN 2N3904 UTC2N3904
Text: UTC 2N3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =625mW *Complementary to 2N3906 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
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2N3904
625mW
2N3906
QW-R201-027
2n3904 npn
2N3904
2N3906
transistor NPN 2N3904
UTC2N3904
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mmbt9013
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012
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MMBT9013
625mW)
500mA)
MMBT9012
MMBT9013-x-AE3-R
MMBT9013L-x-AE3-R
MMBT9013G-x-AE3-R
OT-23
QW-R206-021
mmbt9013
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2N3906L
Abstract: 2N3906-G 2N3906L-T92-K
Text: UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: Pc MAX =625mW * Complementary to UTC 2N3904 1 TO-92 ORDERING INFORMATION Ordering Number
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2N3906
625mW
2N3904
2N3906L-T92-B
2N3906G-T92-B
2N3906L-T92-K
2N3906G-T92-K
2N3906L-T92-R
2N3906G-T92-R
QW-R201-028
2N3906L
2N3906-G
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Untitled
Abstract: No abstract text available
Text: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE
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2N5401
-150V
625mW
QW-R201-001
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Untitled
Abstract: No abstract text available
Text: UTC MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92
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MPSA94
-400V
625mW
QW-R201-021
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FMMT734
Abstract: smd transistor 5k
Text: Transistors SMD Type Power Darlington Transistor FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE sat at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1
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FMMT734
OT-23
625mW
-10mA,
-100mA,
-10mA
100MHz
-500mA,
FMMT734
smd transistor 5k
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Untitled
Abstract: No abstract text available
Text: Transistors IC ransistor SMD Type Product specification FMMT723 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 625mW power dissipation 0.4 3 Features 1 IC Up To 10A peak pulse current 0.55 IC CONT 2.5A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Excellent hfe Characteristics Up To 10A pulsed
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FMMT723
OT-23
625mW
-150mA
-10mA,
-50mA
100MHz
-50mA
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2N3904 20736 Marilla Street Chatsworth !"# $ % !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information Capable of 625mW of Power Disspation and 200mA Ic
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2N3904
625mW
200mA
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Product specification FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE sat at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1 0.95-0.1
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FMMT734
OT-23
625mW
-10mA,
-100mA,
-10mA
100MHz
-500mA,
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Untitled
Abstract: No abstract text available
Text: ransistors SMD Type Product specification FMMT624 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Power dissipation :PC=625mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector current:IC=1A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01
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FMMT624
OT-23
625mW
200mA
100MHz
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G2N4401
Abstract: G2N4403
Text: CORPORATION G2N4401 ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B NP N E PITAX I AL PLANAR T RANSI STOR Description The G2N4401 is designed for general purpose switching and amplifier applications. Features *Complementary to G2N4403 *High Power Dissipation: 625mW at 25
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G2N4401
2004/11/29B
G2N4401
G2N4403
625mW
150mA
G2N4403
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Untitled
Abstract: No abstract text available
Text: 2N6516 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO=300V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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2N6516
625mW
2N6515
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Untitled
Abstract: No abstract text available
Text: KSP8097 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO=25V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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KSP8097
625mW
2N5088
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PDF
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Untitled
Abstract: No abstract text available
Text: KSP5172 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO=25V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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KSP5172
625mW
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KSP62
Abstract: KSP63 KSP64
Text: KSP62/63/64 KSP62/63/64 Darlington Transistor • Collector-Emitter Voltage: VCES=KSP62: 20V KSP63/64: 30V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSP62/63/64
KSP62:
KSP63/64:
625mW
KSP62
KSP63/64
KSP62
KSP63
KSP64
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2N6515
Abstract: 2N6516 2N6517 2N6518
Text: 2N6515 2N6515 High Voltage Transistor • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: PC max =625mW • Complement to 2N6518 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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2N6515
625mW
2N6518
2N6515
2N6516
2N6517
2N6518
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2n3904 npn fairchild
Abstract: 2N3904 KSP6520 KSP6521
Text: KSP6520/6521 KSP6520/6521 Amplifier Transistor • Collector-Emitter Voltage: VCEO=25V • Collector Power Dissipation: PC max =625mW • Refer to 2N3904 for graphs TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSP6520/6521
625mW
2N3904
2n3904 npn fairchild
KSP6520
KSP6521
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PDF
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c 458 c transistor
Abstract: KSP12 transistor c 458
Text: KSP12 KSP12 Darlington Transistor • Collector-Emitter Voltage: VCES=20V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSP12
625mW
c 458 c transistor
KSP12
transistor c 458
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SS9012
Abstract: SS9013
Text: SS9012 SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector
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SS9012
625mW)
-500mA)
SS9013
SS9012
SS9013
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KSP05
Abstract: KSP06
Text: KSP05/06 KSP05/06 Amplifier Transistor • Collector-Emitter Voltage: VCEO = KSP05: 60V KSP06: 80V • Collector Dissipation: PC max =625mW • Complement to KSP55/56 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSP05/06
KSP05:
KSP06:
625mW
KSP55/56
KSP05
KSP06
KSP05
KSP06
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PDF
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Untitled
Abstract: No abstract text available
Text: SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector
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SS9013
625mW)
500mA)
SS9012
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transistor cs 9012
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR SS9013 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. PT=625mW High C ollector Current. (lc=500m A) C om plem entary to S S 9012 Excellent hpE linearity.
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OCR Scan
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SS9013
625mW
transistor cs 9012
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PDF
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