SB007W03C
Abstract: No abstract text available
Text: Ordering number:EN2936A SB007W03C Schottky Barrier Diode Twin Type • Cathode Common 30V, 70mA Rectifier Applictions Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1169A [SB007W03C] Features · Low forward voltage (VF max=0.55V).
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EN2936A
SB007W03C
SB007W03C]
SB007W03C
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SB007W03S
Abstract: No abstract text available
Text: Ordering number:EN2937A SB007W03S Schottky Barrier Diode Twin Type • Cathode Common 30V, 70mA Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1129A [SB007W03S] Features · Low forward voltage (VF max=0.55V).
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EN2937A
SB007W03S
SB007W03S]
SB007W03S
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1164B
Abstract: DWC010
Text: DWC010 Ordering number : ENN2832D DWC010 Silicon Epitaxial Planar Type Ultrahigh-Speed Switching Diode Features • • • Ideally suited for use in hybrid ICs because of ultrasmall package. High breakdown voltage : VR=200V. Small interterminal capacitance.
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DWC010
ENN2832D
1164B
DWC010
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GZB10
Abstract: GZB11 GZB12 GZB13 GZB15 GZB16 GZB18
Text: Ordering number:EN1349C GZB2.0 to 36 Silicon Planar Type 1.0W Zener Diode Features Package Dimensions • Glass sleeve structure. · Voltage regulator, surge absorber applications. · Power dissipation : P=1.0mW. · Zener voltage : VZ=2.0 to 36 V. · Small-sized package : JEDEC DO-41
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EN1349C
DO-41
GZB10
GZB11
GZB12
GZB13
GZB15
GZB16
GZB18
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GMB01
Abstract: GMB01U
Text: Ordering number:EN1897A GMB01, 01U Epitaxial Planar Type Very High-Speed Switching Diode Features Package Dimensions • Glass sleeve structure. · Allowable power dissipation : P=250mW max. · Interterminal capacitacne : c=3.0pF max. · Reverse recovery time : trr=4.0ns max.
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EN1897A
GMB01,
250mW
DO-34
GMB01
GMB01U
GMB01
GMB01U
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SB01W05S
Abstract: No abstract text available
Text: Ordering number:EN2989A SB01W05S Schottky Barrier Diode Twin Type • Cathode Common 50V, 100mA Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1129A [SB01W05S] Features · Low forward voltage (VF max=0.55V).
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EN2989A
SB01W05S
100mA
SB01W05S]
SB01W05S
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN2794 DSM10 Silicon Diffused Junction Type 1.0A Power Rectifier Features Package Dimensions • Meets the requirements for automatic mounter and permits DSM10-applied sets to be made smaller. · Peak reverse voltage : VRM=200 to 600V. · Average rectified current : IO=1.0A.
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EN2794
DSM10
DSM10-applied
DSM10]
DSM10C
DSM10E
DSM10G
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GZB10
Abstract: GZB11 GZB12 GZB13
Text: Ordering number : ENN1349C GZB3.0 to 36 Silicon Planar Type GZB3.0 to 36 1.0W Zener Diode Features • • • • Glass sleeve structure. Voltage regulator, surge absorber applications. Power dissipation : P=1.0W. Zener voltage : VZ=3.0 to 36V. Small-sized package : JEDEC DO-41.
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ENN1349C
DO-41.
GZB10
GZB11
GZB12
GZB13
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN2989A SB01W05S Schottky Barrier Diode Twin Type • Cathode Common 50V, 100mA Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1129A [SB01W05S] Features · Low forward voltage (VF max=0.55V).
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EN2989A
SB01W05S
100mA
SB01W05S]
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SB0030-01A
Abstract: No abstract text available
Text: Ordering number:EN2191A SB0030-01A Schottky Barrier Diode 10V, 30mA Detection Applications Features Package Dimensions • Glass sleeve structure. · Detection efficiency : 70%. · Small size Half the size of the DO-35 heretofore in use . unit:mm 1153A [SB0030-01A]
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EN2191A
SB0030-01A
DO-35
SB0030-01A]
SB0030-01A
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2198
Abstract: SB0015-03A
Text: Ordering number:EN2198A SB0015-03A Schottky Barrier Diode 30V, 15mA Detection Applications Features Package Dimensions • Glass sleeve structure. · Detection efficiency : 70%. · Small size Half the size of the DO-35 heretofore in use unit:mm 1153A [SB0015-03A]
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EN2198A
SB0015-03A
DO-35
SB0015-03A]
2198
SB0015-03A
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RL20
Abstract: DTC10C-N DTC10E-N DTC10G-N DTC10-N
Text: Ordering number:EN2096B DTC10-N Silicon Planar Type 10A Bidirectional Thyristor Features Package Dimensions • Peak OFF-state voltage : 200 to 600V. · RMS ON-state current : 10A. · TO-220 package. unit:mm 1155 [DTC10-N] Specifications Absolute Maximum Ratings at Ta = 25˚C
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EN2096B
DTC10-N
O-220
DTC10-N]
DTC10C-N
DTC10E-N
DTC10G-N
1mst10ms
f50Hz,
duty10%
RL20
DTC10C-N
DTC10E-N
DTC10G-N
DTC10-N
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SB007T03Q
Abstract: No abstract text available
Text: Ordering number:EN4169A SB007T03Q Schottky Barrier Diode Series Connection 30V, 70mA Rectifier Applications Package Dimensions • Universal-use rectifiers. · High frequency rectification (switching regulators, converters, choppers). unit:mm 1246A [SB007T03Q]
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EN4169A
SB007T03Q
SB007T03Q]
SB007T03Q-applied
SB007T03Q
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SB007-03Q
Abstract: D288
Text: Ordering number:EN2939A SB007-03Q Schottky Barrier Diode 30V, 70mA Rectifier Applications Package Dimensions • High frequency rectifications switching regulators, converters, choppers . unit:mm 1197A [SB007-03Q] Features · Low forward voltage (VF max=0.55V).
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EN2939A
SB007-03Q
SB007-03Q]
SB007-03Qapplied
SB007-03Q
D288
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DTM12C-N
Abstract: DTM12E-N DTM12G-N DTM12-N
Text: Ordering number:EN1880B DTM12-N Silicon Planar Type 12A Bidirectional Thyristor Features Package Dimensions • Insulation type. · Peak OFF-state voltagte : 200 to 600V. · RMS ON-state current : 12A. · TO-220 package. unit:mm 1144 [DTM12-N] * : The gate trigger mode is shown below.
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EN1880B
DTM12-N
O-220
DTM12-N]
DTM12C-N
DTM12E-N
DTM12G-N
1mst10ms
f50Hz,
DTM12C-N
DTM12E-N
DTM12G-N
DTM12-N
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GMA01
Abstract: GMA01U
Text: Ordering number:EN1065C GMA01, 01U Epitaxial Planar Silicon Diode Very High-Speed Switching, Bias Stabilizing Applications Features Package Dimensions • Glass sleeve structure. · Allowable power dissipation : P=300mW max. · Interterminal capacitance : c=3.0pF max.
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EN1065C
GMA01,
300mW
DO-35
GMA01
GMA01U
GMA01
GMA01U
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SB007W03Q
Abstract: No abstract text available
Text: Ordering number:EN2938A SB007W03Q Schottky Barrier Diode Twin Type • Cathode Common 30V, 70mA Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1198A [SB007W03Q] Features · Low forward voltage (VF max=0.55V).
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EN2938A
SB007W03Q
SB007W03Q]
SB007W03Qapplied
SB007W03Q
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18752
Abstract: 18751 circuit DTA08E IT12A
Text: Ordering number:EN1875A DTA08E Silicon Planar Type 0.8A Bidirectional Thyristor Features Package Dimensions • Low AC power control. · Peak OFF-state voltage : 400V. · RMS ON-state current : 0.8A. · TO-92 package. unit:mm 1141 [DTA08E] *:The gate trigger mode is shown below.
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EN1875A
DTA08E
DTA08E]
f50Hz,
duty10%
18752
18751 circuit
DTA08E
IT12A
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GMA01
Abstract: GMA01U
Text: Ordering number:EN1065C GMA01, 01U Epitaxial Planar Silicon Diode Very High-Speed Switching, Bias Stabilizing Applications Features Package Dimensions • Glass sleeve structure. · Allowable power dissipation : P=300mW max. · Interterminal capacitance : c=3.0pF max.
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EN1065C
GMA01,
300mW
DO-35
GMA01
GMA01U
GMA01
GMA01U
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Untitled
Abstract: No abstract text available
Text: DWC010 Ordering number : ENN2832C DWC010 Silicon Epitaxial Planar Type Ultrahigh-Speed Switching Diode Features • • • Ideally suited for use in hybrid ICs because of ultrasmall package. High breakdown voltage : VR=200V. Small interterminal capacitance.
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ENN2832C
DWC010
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN1349C GZB2.0 to 36 Silicon Planar Type 1.0W Zener Diode Features Package Dimensions • Glass sleeve structure. · Voltage regulator, surge absorber applications. · Power dissipation : P=1.0mW. · Zener voltage : VZ=2.0 to 36 V. · Small-sized package : JEDEC DO-41
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EN1349C
DO-41
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SB00703Q
Abstract: No abstract text available
Text: SB007-03Q Ordering number : EN2939B SANYO Semiconductors DATA SHEET SB007-03Q Schottky Barrier Diode 30V, 70mA Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • • • Fast reverse recovery time (trr max=10ns)
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EN2939B
SB007-03Q
SB007-03Q
SB00703Q
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN2939B SB007-03Q Schottky Barrier Diode http://onsemi.com 30V, 70mA, Low IR, Single MCP Applications • High frequency rectification switching regulators, converters, choppers Features • • • • • Fast reverse recovery time (trr max=10ns)
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EN2939B
SB007-03Q
SB007-03Q
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4730 _ DTN6 Silicon Diffused Junction Type S A § iY O I 6A Bidirectional Thyristor Package Dimensions Features •AC power control. • Peak OFF-state voltage : 400, 600V. * RMS ON-stmc currcnt : 6A, uniCrnm / / * : The gale trigger modes are shown below.
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N4730
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