Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRS8030T1R0NJGJV Features Item Summary 1.0 H(±30%), 7800mA, 6200mA Lifecycle Stage
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NRS8030T1R0NJGJV
7800mA,
6200mA
AEC-Q200
1000pcs
100kHz
7800mA
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS8030T1R5NJGJ Features Item Summary 1.5 H(±30%), 6200mA, 5300mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions
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NRS8030T1R5NJGJ
6200mA,
5300mA
1000pcs
100kHz
6200mA
80MHz
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NRS8030T
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS8030T1R5NJGJ Features Item Summary 1.5 H(±30%), 6200mA, 5300mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions
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NRS8030T1R5NJGJ
6200mA,
5300mA
1000pcs
100kHz
6200mA
80MHz
NRS8030T
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRS8030T1R0NJGJV Features Item Summary 1.0 H(±30%), 7800mA, 6200mA Lifecycle Stage
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Original
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NRS8030T1R0NJGJV
7800mA,
6200mA
AEC-Q200
1000pcs
100kHz
7800mA
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS8030T1R0NJGJ Features Item Summary 1.0 H(±30%), 7800mA, 6200mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions
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NRS8030T1R0NJGJ
7800mA,
6200mA
1000pcs
100kHz
7800mA
120MHz
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CLEVO
Abstract: 9lpr600 ITE8512E ITE-8512E m74S SMG 101 ITE8512 Sis 968 M740S M740SU
Text: Preface Notebook Computer M740SU/M760SU Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are
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M740SU/M760SU
20mil
Z4902
3216QB
37B52D
CLEVO
9lpr600
ITE8512E
ITE-8512E
m74S
SMG 101
ITE8512
Sis 968
M740S
M740SU
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8850m
Abstract: UL2054
Text: Technical Data Sheet Rechargeable Lithium-ion Battery Pack RRC2020 Standard Li-ion battery pack RRC2020 9 x18650 cells 3S3P with 11.25V / 8850mAh / 99.6Wh Features: Highest available energy density SMBus v1.1 compliant Fulfils JEITA standards, advanced temperature-dependent charging profile
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RRC2020
x18650
8850mAh
F-92300
RRC2020
8850m
UL2054
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SiS M671DX
Abstract: ITE8512E CLEVO sis*968 M740S vt6103l ICS9LPR600 ITE8512 Sis 968 m74S
Text: Preface Notebook Computer M770SU/M775SU Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are
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M770SU/M775SU
20mil
Z0501
-3216QBC
Z0503
SiS M671DX
ITE8512E
CLEVO
sis*968
M740S
vt6103l
ICS9LPR600
ITE8512
Sis 968
m74S
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Untitled
Abstract: No abstract text available
Text: FLM3742-25DA F, ¿¡U-,. r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 44dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz
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FLM3742-25DA
UJ11jU
44dBm
-45dBc
32dBm
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FLM4450-25D
Abstract: FUJI GaAs FET 25Q 328 FLM4450-25DA
Text: n FLM4450-25DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q
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FLM4450-25DA
44dBm
-45dBc
32dBm
FLM4450-25DA
FLM4450-25D
FUJI GaAs FET
25Q 328
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FLM3742-25DA
Abstract: No abstract text available
Text: F|J ,. FLM3742-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM 3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q
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FLM3742-25DA
44dBm
-45dBc
32dBm
FLM3742-25DA
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FLM4450-25DA
Abstract: FLM4450-25D
Text: F, . FLM4450-25DA r UJ11 j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: r!add = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q
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FLM4450-25DA
44dBm
-45dBc
32dBm
FLM4450-25DA
FLM4450-25D
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FLM4450-25D
Abstract: 25Q 328 4232 gm
Text: FLM4450-25DA Internally M a tch ed Power ìaA s F E l s ABSOLUTE MAXIMUM RATING (A m bient Tem perature Ta=25°C Condition Item Symbol Drain-Source Voltage Vd S Gate>Source Voltage vgs Total Power Dissipation Tc = 25°C pt Storage Temperature Tstg Channel Temperature
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FLM4450-25DA
35dBm
33dBm
29dBm
27dBm
25dBm
FLM4450-25D
25Q 328
4232 gm
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