6MBI15S-120-50
Abstract: MS5F6209 TT 6170 ED-4701 6170 TC a3015 6mbi15 MS5F MS5F6212
Text: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI15S-120-50 RoHS compliant product Spec. No. : MS5F 6170 Jul. 21 ‘05 K.Muramatsu Jul. 22 ‘05 T.Miyasaka T.Hosen Jul. 22 ‘05 K.Yamada MS5F 6170 1 14 H0400407b R e v i s e d Date Jul.-21-’05 ClassiInd.
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6MBI15S-120-50
July-2005
6MBI15S-120-50
MS5F6209
TT 6170
ED-4701
6170 TC
a3015
6mbi15
MS5F
MS5F6212
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5sya2020
Abstract: 5SDD40H4000
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 3930 6170 46x103 0.885 0.135 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-01 Okt. 08 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1
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40H4000
5SYA1176-01
CH-5600
5sya2020
5SDD40H4000
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TRANSISTOR REPLACEMENT ECG 1022
Abstract: Hitachi Semiconductor 3517 BT 4840 HD66752 hcd66752bp hcd66752 Hitachi DSA002780 Nippon capacitors
Text: HD66752 132 x 168-dot Graphics LCD Controller/Driver with Bit-operation Functions ADE-207-326(Z) Rev 1.3 February, 2001 Description The HD66752, dot-matrix graphics LCD controller and driver LSI, displays 132-by-168-dot graphics for four monochrome grayscales. When 12-by-13-dot size fonts are used, up to 13 lines x 11 characters (143
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HD66752
168-dot
ADE-207-326
HD66752,
132-by-168-dot
12-by-13-dot
HD66752
16-bit
TRANSISTOR REPLACEMENT ECG 1022
Hitachi Semiconductor 3517
BT 4840
hcd66752bp
hcd66752
Hitachi DSA002780
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: Heater Hookup Wire MADE IN USA Additional Heater Hook-up Wires shown in the OMEGALUX Complete Electric Heaters Handbook & Encyclopedia Current Carrying Capacity Base Temperature at 40°C Values tabulated are In Amperes Wire Gage, AWG 24 22 20 18 16 14
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npc-27%
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IRFBA35N60C
Abstract: No abstract text available
Text: PD - 93800A PROVISIONAL SMPS MOSFET IRFBA35N60C HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Benefits Low Gate Charge Qg Reduces Drive Required l Improved Gate Resistance for Faster
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3800A
IRFBA35N60C
Super-220TM
IRFBA35N60C
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Untitled
Abstract: No abstract text available
Text: Thomas Research Products SSL Solutions Faster Than The Speed Of Light 75W TRC-075 Dimmable Series Total Power: 75 Watts Input Voltage: 100-277 Vac, 50/60 Hz Outputs: Single from 6-170 Vdc High Eficiency: 86-92% High Power Factor Wet Location Rated, IP67 Compliant
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TRC-075
UL8750
EN61347
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wega 3140
Abstract: MFW diode Siemens L16A Diode MFW 24 Diode MFW 25 MFW diode 31 Diode marking MFW 31 Diode MFW 26 Diode marking MFW
Text: Terminal markers Contents Terminal markers Terminal markers Introduction B.2 Selection table – terminal markers B.3 DEK card B.6 DEK MultiCard B.10 WS / ZS B.12 MultiFit for use with other makes of terminals B.16 Cross-reference table B.20 Terminal marker WAD
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Untitled
Abstract: No abstract text available
Text: Thomas Research Products SSL Solutions Faster Than The Speed Of Light 75W TRC-075 Dimmable Series Total Power: 75 Watts Input Voltage: 100-277 Vac, 50/60 Hz Outputs: Single from 6-170 Vdc High Efficiency: 86-92% High Power Factor Wet Location Rated, IP67 Compliant
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TRC-075
UL8750
EN61347
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window comparator
Abstract: conditioning circuit for window open close detection V6170 V6-17 delay line ms-26
Text: EM MICROELECTRONIC-MARIN SA V6170 Accurate Voltage Window Surveillance and Software Monitoring Standby mode, maximum current 35 µA Reset output guaranteed for VDD voltage down to 1.2 V Comparator for voltage monitoring, voltage reference 1.17 V ±2.2% voltage reference accuracy at + 25 °C
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V6170
F/470
D/334
window comparator
conditioning circuit for window open close detection
V6170
V6-17
delay line ms-26
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IY 10060
Abstract: DS25 AT
Text: Bridgelux RS Array Series Product Data Sheet DS25 BXRA-xxx-3500-F, BXRA-xxx4000-H, BXRA-xxx7000-J, BXRA-40E4000-F, BXRA-40E4500-H, BXRA-40E7500-J, BXRA-xxC4500-F, BXRA-xxC5300-H, BXRA-xxC9000-J Introduction The Bridgelux family of LED Array products delivers high performance, compact and cost-effective solidstate lighting solutions to serve the general lighting market. These products combine the higher efficacy,
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BXRA-xxx-3500-F,
BXRA-xxx4000-H,
BXRA-xxx7000-J,
BXRA-40E4000-F,
BXRA-40E4500-H,
BXRA-40E7500-J,
BXRA-xxC4500-F,
BXRA-xxC5300-H,
BXRA-xxC9000-J
IY 10060
DS25 AT
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J-STD-020D
Abstract: No abstract text available
Text: DURISTM E 3 LCW JNSH.PC Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes SMT Gehäuse, farbiger Silikon Verguss • Besonderheit des Bauteils: Bauform mit kleinen Abmessungen 3,0 x 1,4 x 1,2 mm³ LxBxH , hohe Effizienz, lange Lebensdauer
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5000K
2000/Rolle,
JESD22-A114-D
J-STD-020D
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Untitled
Abstract: No abstract text available
Text: DURISTM E 3 Datasheet LCW JNSH.PC Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes SMT Gehäuse, farbiger Silikon Verguss • Besonderheit des Bauteils: Bauform mit kleinen Abmessungen 3,0 x 1,4 x 1,2 mm³ LxBxH , hohe Effizienz, lange Lebensdauer
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5000K
2000/Rolle,
JESD22-A114-D
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hr 8327
Abstract: hr6p TAD-T2 LM 1122
Text: VM 6170 Series v . W VTC Inc. Va/ue #w Customer7* MAGNETO-RESISTIVE HEAD, PROGRAMMABLE READ/WRITE PREAMPLIFIER PRELIMINARY FEATU R ES • August,1996 BLOCK DIAGRAM General GND - Designed for Use With Four-Terminal MR Heads - 3-Line Serial Interface Provides Programmable Bias Current, Write Current,
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10-Channels
hr 8327
hr6p
TAD-T2
LM 1122
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42530
Abstract: No abstract text available
Text: V T C Inc. Value the Customer V M 6170 Series MAGNETO-RESISTIVE HEAD, PROGRAMMABLE READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES • • • A u g u s t, 1 9 9 7 BLOCK DIAGRAM General - Designed for Use With Four-Terminal MR Heads - 3-Line Serial Interface
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10-Channels
42530
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PDF
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2n6169
Abstract: 2N6167 TT 6170 65ti
Text: 2N6167 thru 2N6170 S ilico n C o n tro lled R ectifiers Reverse B lo c k in g Triode Thyristors . . . desig ned fo r in d u s tria l and co n su m e r a p plication s such as po w e r supplies; b a ttery cha rgers; te m p e ra tu re , m o tor, lig h t and w e ld e r controls.
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2N6167
2N6170
2n6169
TT 6170
65ti
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Untitled
Abstract: No abstract text available
Text: Tem ic 2N6851 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) -200 TDS(on) (ß ) 0.80 I d (A) -4.0 Parametric limits in accordance with M1L-S-19500I564 where applicable. T 0-205A F (TO-39) Ô D P-Channel MOSFF.T Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
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2N6851
M1L-S-19500I564
1503C)
P-37010--
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IN6147A
Abstract: 6153 Q002 1N6138 8800 gt IN6164 GT6139 1N6139 1N6140 1N6144
Text: S — SIC D § 7 ^ 2 3 7 THOMSON D "T~H*SL& 59C 0 2 6 3 5 O T H O M S O N -C S F ^ : ï 1N 61M DIVISION SEMICONDUCTEUF A ^ ? N ° IJ O l M G0üab3S S J ” • 6173 A ° l/ J i " U N I-A N D BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS DIODES DU PRO TECTION UNI - ET BIDIRECTIONNELLES
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18kW/8-20/isexpo.
IN6147A
6153
Q002
1N6138
8800 gt
IN6164
GT6139
1N6139
1N6140
1N6144
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2n6851
Abstract: No abstract text available
Text: Tem ic 2N6851 S ilic o n ix P-Channel Enhancement-Mode Transistor Product Summary V br Dss (V) r DS(on) ( ß ) I d (A) -200 0.80 -4 .0 ; Parametric limits in accordance with M1L-S-I9500i564 where applicable. T0-205A F (TO-39) - O— i} IÏ Ô D P-Channel MOSFET
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2n6851
MIL-S-19500/564
Param2n6851_
P-37010â
2SM735
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MC14599
Abstract: 14599b MC14599B
Text: MOTOROLA MC14099B MC14599B 8-B IT ADDRESSABLE LATCHES Th e M C 1 4 0 9 9 B and M C 1 4 5 9 9 B are 8 b it addressable latches. Data is entered in serial fo rm w h en the a p p ro p ria te la tc h is addressed via address pins AO, A t , A2> and w rite disable is in th e lo w state.
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MC14099B
MC14599B
MC14599B
MC14599
14599b
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IRFBA35N60C
Abstract: No abstract text available
Text: PD - 93800A International IGR Rectifier PROVISIONAL SMPS MOSFET IRFBA35N60C HEXFET Power MOSFET Applications • • • Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching V dss 600V RDS(on) max 0.080Í2 Id 35A Benefits
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-93800A
IRFBA35N60C
IRFBA35N60C
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76629D
Abstract: TO-251AA
Text: HUF76629D3, HUF76629D3S in tefsil O c t o b e r 1999 D ata S h e e t 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging m File N u m b e r a & 4 6 9 2 .3 ~ Features JEDEC TO-251AA JEDEC TO-252AA • Ultra Low On-Resistance • rDS ON = 0.052Q , V GS = 10 V
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HUF76629D3,
HUF76629D3S
O-251AA
O-252AA
HUF76629D3
HUF76629D3
HUF76629D3S
O-251
O-252AA
76629D
TO-251AA
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CIL 108
Abstract: ic tl 0741 1N830 cil-500 1N526B 1N8313 1n9303
Text: MILITARY APPROVED Current Regulator Reid Effect Diodes 1N5283 thru 1N5314 and JAN/JTX/JTXV GEOMETRY 507 1N5283-1N5290 GEOMETRY 465 (1N529Ì-1N5314) • A v a ila b le a s J A N , JANfX, JA N -T X -v thru M a x Components* (UB Package) • Current Constant Over Wide Voltage Range
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1N5283
1N5314
1N5283-1N5290)
1N529
-1N5314)
100UI
CIL 108
ic tl 0741
1N830
cil-500
1N526B
1N8313
1n9303
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PDF
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76629D
Abstract: No abstract text available
Text: HUF76629D3, HUF76629D3S in te is i I D a ta S h e e t O c to b e r F ile N u m b e r 4 6 9 2 .3 uuno^r 20A, 100V, 0.054 Ohm, N-Channef, Logic Level UltraFET Power MOSFET Packaging 19 9 9 Features JE D EC TO -251A A JEDEC TO -252AA • Ultra Low On-Resistance
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HUF76629D3,
HUF76629D3S
-251A
-252AA
HUF76629D3
HUFT6629D3
F76629D3S
AN7260.
76629D
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PDF
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Untitled
Abstract: No abstract text available
Text: RFD16N06LE, RFD16N06LESM Semiconductor April 1999 Data Sheet 16A, 60V, 0.047 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
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RFD16N06LE,
RFD16N06LESM
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