6116 RAM
Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
Text: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS
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2048x8
450ns
10-100mA
CY7C128
IDT6116A
V61C16
VT20C19
CXK5814P
TC2018
MCM2018A
6116 RAM
ic 6116
TMM2016
6116
SRAM 6116
ram 6116
6116 memory
6116 CMOS RAM
6116 static RAM chip
SY2128
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STATIC RAM 6264
Abstract: RAM 6264 6264 EPROM 6116 RAM 6116H 6264 RAM 6264 cmos ram 6264 static RAM rom 6116 6116 static RAM 150ns
Text: "SILICON I N T E G R A T O ETE D BssaaflT oaaaoio 7 ‘T-mp-a.s- CMOS STATIC RAM SIS 6116/SIS 6116H 2Kx8 High Speed CMOS Static RAM FEATURE •Single + 5V supply and high density 24 pin package •Access Time: 3 d / 45/55/70ns Max. SIS 6116H 100/120/150ns Max. (SIS 6116)
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6116/SIS
6116H
45/55/70ns
6116H)
100/120/150ns
250mW
STATIC RAM 6264
RAM 6264
6264 EPROM
6116 RAM
6264 RAM
6264 cmos ram
6264 static RAM
rom 6116
6116 static RAM 150ns
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6116 RAM
Abstract: ci 6116 ram 6116 6116 chip diagram of ram chip 6116 6116 static ram Matra-Harris Semiconductor 6116 CMOS RAM RAM type 6116 6116L
Text: MHS lllll AIATRA-HARRIS SEMICONDUCTOR HM 6116/6116 L 2K x 8 CMOS STATIC RAM MAY 1986 Features • MILITARY/INDUSTRIAL : FAST ACCESS TIME : 120 ns • ASYNCHRONOUS • STAND BY CURRENT : 100 pA max • OPERATING SUPPLY CURRENT : 60 mA max • BATTERY BACK UP OPERATION : 2V mln - SO jiA max
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6116/6116L
6116 RAM
ci 6116
ram 6116
6116
chip diagram of ram chip 6116
6116 static ram
Matra-Harris Semiconductor
6116 CMOS RAM
RAM type 6116
6116L
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Untitled
Abstract: No abstract text available
Text: § 5 -= MHS IlM ll AIATRA-HARRIS SEMICONDUCTOR HM 6116/6116 L 2K x 8 CM OS STATIC RAM C k V rsx Features • MILITARY/INDUSTRIAL : FAST A C C E SS TIME : 120 ns • ASYNCHRONOUS • STAND BY CURRENT : 100 pA max • OPERATING SU PPLY CURRENT : SO mA max • BATTERY BACK UP OPERATION : 2V mln - SO jiA max
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6116L
6116/6116L
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EL6116
Abstract: 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25
Text: L 6116 2K x 8 Static RAM Low Power D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 2K x 8 Static RAM w ith Chip Select Powerdown, Output Enable The L6116 is a high-performance, lowpower CMOS Static RAM. The storage circuitry is organized as 2048
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L6116
L6116)
L6116-L)
L6116
L6116-L
MIL-STD-883,
IDT6116,
CY7C128/CY6116
24-pin
EL6116
6116 RAM
ci 6116
ram 6116
IDT6116
memory 6116
6116 memory
6116 ram 2k
chip diagram of ram chip 6116
L6116CMB25
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chip diagram of ram chip 6116
Abstract: ci 6116 RAM 6116
Text: SGS-THOMSON KLH Tr[^© iìOa©S M K 6116 MK6116, MKI6116, MK6116L, MKI6116L (N/S - 15/20/25 2 K X 8 CMOS STATIC RAM • BYTEWYDE 2K x 8 CMOS STATIC RAM. .« lili ■ +5 VOLT ONLY WRITE/READ. ■ HIGH PERFORMANCE WITH LOW CMOS STANDBY POWER. PIN NAMES
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MK6116,
MKI6116,
MK6116L,
MKI6116L
24-PIN
28-PIN
MK6116
384-bit
24-pin,
chip diagram of ram chip 6116
ci 6116
RAM 6116
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RAM MK6116
Abstract: MK6116-15 6116 ram 2k MK6116-25 DIP-24 MK6116 FZJ 105
Text: SGS-THOMSON M K 6116 M MK6116, MKI6116, MK6116L, MKI6116L N/S - 15/20/25 2 K X 8 C M O S STATIC RAM i BYTEWYDE 2K x 8 CM OS STATIC RAM. £.j U i +5 VOLT ONLY WRITE/READ. i 24-PIN 600 MIL PLASTIC DIP, JEDEC PINOUT 28-PIN 330 MIL SOIC. i EQUAL W RITE AND READ CYCLE TIMES.
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MK6116
MK6116,
MKI6116,
MK6116L,
MKI6116L
24-PIN
28-PIN
MK6116
384-bit
24-pin,
RAM MK6116
MK6116-15
6116 ram 2k
MK6116-25
DIP-24
FZJ 105
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6116 block diagram
Abstract: No abstract text available
Text: Irillll I V i l l l September 1989 HM 6116 DATA SHEET_ 2kx8 GENERAL PURPOSE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE RANGE : - 55 TO + 125 C
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F12-H
F0F11
6116 block diagram
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74c920
Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Text: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ ITSU EDI HIT ACHI IDT M ITSU MOT BISHI OROLA N A T IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous
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256x4,
HM-6508
HM-6518
HM-6551
HM-6561
74C929
74C930
74C920
HM-6504
74c920
ram 6164
6116 RAM
2116 ram
2064 ram
4016 RAM
4045 RAM
6264 cmos ram
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SR06
Abstract: V3089 6116LA25 DSC-3089/06
Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)
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20/25/35/45/55/70/90/120/150ns
20/25/35/45ns
15/20/25/35/45ns
24-pin
MIL-STD-833,
IDT6116SA
IDT6116LA
SR06
V3089
6116LA25
DSC-3089/06
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4464 ram
Abstract: us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory
Text: In d u s try CMOS RAM C ross R eference H A R R IS C M O S R A M s F U J ID E SC RIPTIO N HARR IS AM O EDI rrsu H IT AC H I ID T M ITS U BISHI M OT O R O LA N AT IO N A L 6508 6508 74C 929 6518 6518 74C 930 NEC O KI H A R R IS / RCA TO SH IB A N M O S,
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8816H
4464 ram
us4k
74C930
6116 ram 2k
74c920
6508 ram
4464 memory
6164 memory
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GR281
Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
Text: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.
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GR281
GR281
2000/95/EC
2716 eprom
4016 RAM
2716 eprom datasheet
memory 2716
eprom 2716
pd446
static ram 4802
2716 2k eprom retention
memory ram 6116
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IDT6116LA
Abstract: IDT6116SA SO24-2
Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)
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IDT6116SA
IDT6116LA
20/25/35/45/55/70/90/120/150ns
20/25/35/45ns
15/20/25/35/45ns
24-pin
MIL-STD-833,
IDT6116LA
IDT6116SA
SO24-2
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Untitled
Abstract: No abstract text available
Text: RPR 2K x 8 NON-VOLATILE RAM MsmumnsusA • • • • • • • • • GR281 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM
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GR281
24-pin
GR281
PD446,
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6116LA45
Abstract: 6116LA120 chip diagram of ram chip 6116 6116LA25 6116 static RAM chip IDT6116SA/LA 6116 static RAM 150ns 6116 memory DIP-24 IDT6116LA
Text: CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT6116SA IDT6116LA Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)
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IDT6116SA
IDT6116LA
20/25/35/45/55/70/90/120/150ns
20/25/35/45ns
15/20/25/35/45ns
24-pin
MIL-STD-833,
6116LA45
6116LA120
chip diagram of ram chip 6116
6116LA25
6116 static RAM chip
IDT6116SA/LA
6116 static RAM 150ns
6116 memory
DIP-24
IDT6116LA
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Untitled
Abstract: No abstract text available
Text: apR FAST ACCESS - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout
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GR281-4
24-pin
GR281
PD446
GR281
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6116 CMOS RAM
Abstract: 6116LA45 IDT6116SA/LA IDT6116LA IDT6116SA SO24-2 IDT 6116 memory chip
Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)
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IDT6116SA
IDT6116LA
20/25/35/45/55/70/90/120/150ns
20/25/35/45ns
15/20/25/35/45ns
24-pin
MIL-STD-833,
6116 CMOS RAM
6116LA45
IDT6116SA/LA
IDT6116LA
IDT6116SA
SO24-2
IDT 6116 memory chip
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Untitled
Abstract: No abstract text available
Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)
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IDT6116SA
IDT6116LA
20/25/35/45/55/70/90/120/150ns
20/25/35/45ns
15/20/25/35/45ns
24-pin
MIL-STD-833,
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6116LA45
Abstract: IDT6116LA IDT6116SA SO24-2
Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)
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IDT6116SA
IDT6116LA
20/25/35/45/55/70/90/120/150ns
20/25/35/45ns
15/20/25/35/45ns
24-pin
MIL-STD-833,
6116LA45
IDT6116LA
IDT6116SA
SO24-2
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ram 8416
Abstract: No abstract text available
Text: FAST A C C E S S - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout
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GR281-4
24-pin
GR281
PD446
ram 8416
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6116 CMOS RAM
Abstract: 6116LA45 6116 ram 2k
Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)
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IDT6116SA
IDT6116LA
20/25/35/45/55/70/90/120/150ns
20/25/35/45ns
15/20/25/35/45ns
24-pin
MIL-STD-833,
6116 CMOS RAM
6116LA45
6116 ram 2k
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6116LA55
Abstract: No abstract text available
Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)
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IDT6116SA
IDT6116LA
20/25/35/45/55/70/90/120/150ns
20/25/35/45ns
15/20/25/35/45ns
24-pin
MIL-STD-833,
6116LA55
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6116LA45
Abstract: IDT6116LA IDT6116SA SO24-2
Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)
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IDT6116SA
IDT6116LA
20/25/35/45/55/70/90/120/150ns
20/25/35/45ns
15/20/25/35/45ns
24-pin
MIL-STD-833,
6116LA45
IDT6116LA
IDT6116SA
SO24-2
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Untitled
Abstract: No abstract text available
Text: CMOS Static RAM 16K 2K x 8-Bit IDT6116SA IDT6116LA Features Description ◆ The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a
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IDT6116SA
IDT6116LA
IDT6116SA/LA
384-bit
SR-0602-02.
24-pin
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