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    6116 RAM 2K Search Results

    6116 RAM 2K Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    6116LA55TDB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116SA55DB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116LA35DB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116SA20SOG Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, SOIC31/Tube Visit Renesas Electronics Corporation
    6116LA35TDB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116LA70TDB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation

    6116 RAM 2K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6116 RAM

    Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
    Text: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS


    Original     		PDF 2048x8 450ns 10-100mA CY7C128 IDT6116A V61C16 VT20C19 CXK5814P TC2018 MCM2018A 6116 RAM ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128

    SR06

    Abstract: V3089 6116LA25 DSC-3089/06
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		PDF 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, IDT6116SA IDT6116LA SR06 V3089 6116LA25 DSC-3089/06

    GR281

    Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
    Text: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.


    Original     		PDF GR281 GR281 2000/95/EC 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116

    IDT6116LA

    Abstract: IDT6116SA SO24-2
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		PDF IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, IDT6116LA IDT6116SA SO24-2

    6116LA45

    Abstract: 6116LA120 chip diagram of ram chip 6116 6116LA25 6116 static RAM chip IDT6116SA/LA 6116 static RAM 150ns 6116 memory DIP-24 IDT6116LA
    Text: CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT6116SA IDT6116LA Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		PDF IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, 6116LA45 6116LA120 chip diagram of ram chip 6116 6116LA25 6116 static RAM chip IDT6116SA/LA 6116 static RAM 150ns 6116 memory DIP-24 IDT6116LA

    6116 CMOS RAM

    Abstract: 6116LA45 IDT6116SA/LA IDT6116LA IDT6116SA SO24-2 IDT 6116 memory chip
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		PDF IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, 6116 CMOS RAM 6116LA45 IDT6116SA/LA IDT6116LA IDT6116SA SO24-2 IDT 6116 memory chip

    Untitled

    Abstract: No abstract text available
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		PDF IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833,

    6116LA45

    Abstract: IDT6116LA IDT6116SA SO24-2
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		PDF IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, 6116LA45 IDT6116LA IDT6116SA SO24-2

    6116 CMOS RAM

    Abstract: 6116LA45 6116 ram 2k
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		PDF IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, 6116 CMOS RAM 6116LA45 6116 ram 2k

    6116LA55

    Abstract: No abstract text available
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		PDF IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, 6116LA55

    6116LA45

    Abstract: IDT6116LA IDT6116SA SO24-2
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		PDF IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, 6116LA45 IDT6116LA IDT6116SA SO24-2

    Untitled

    Abstract: No abstract text available
    Text: CMOS Static RAM 16K 2K x 8-Bit IDT6116SA IDT6116LA Features Description ◆ The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a


    Original     		PDF IDT6116SA IDT6116LA IDT6116SA/LA 384-bit SR-0602-02. 24-pin

    STATIC RAM 6264

    Abstract: RAM 6264 6264 EPROM 6116 RAM 6116H 6264 RAM 6264 cmos ram 6264 static RAM rom 6116 6116 static RAM 150ns
    Text: "SILICON I N T E G R A T O ETE D BssaaflT oaaaoio 7 ‘T-mp-a.s- CMOS STATIC RAM SIS 6116/SIS 6116H 2Kx8 High Speed CMOS Static RAM FEATURE •Single + 5V supply and high density 24 pin package •Access Time: 3 d / 45/55/70ns Max. SIS 6116H 100/120/150ns Max. (SIS 6116)


    OCR Scan     		PDF 6116/SIS 6116H 45/55/70ns 6116H) 100/120/150ns 250mW STATIC RAM 6264 RAM 6264 6264 EPROM 6116 RAM 6264 RAM 6264 cmos ram 6264 static RAM rom 6116 6116 static RAM 150ns

    6116 RAM

    Abstract: ci 6116 ram 6116 6116 chip diagram of ram chip 6116 6116 static ram Matra-Harris Semiconductor 6116 CMOS RAM RAM type 6116 6116L
    Text: MHS lllll AIATRA-HARRIS SEMICONDUCTOR HM 6116/6116 L 2K x 8 CMOS STATIC RAM MAY 1986 Features • MILITARY/INDUSTRIAL : FAST ACCESS TIME : 120 ns • ASYNCHRONOUS • STAND BY CURRENT : 100 pA max • OPERATING SUPPLY CURRENT : 60 mA max • BATTERY BACK UP OPERATION : 2V mln - SO jiA max


    OCR Scan     		PDF 6116/6116L 6116 RAM ci 6116 ram 6116 6116 chip diagram of ram chip 6116 6116 static ram Matra-Harris Semiconductor 6116 CMOS RAM RAM type 6116 6116L

    EL6116

    Abstract: 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25
    Text: L 6116 2K x 8 Static RAM Low Power D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 2K x 8 Static RAM w ith Chip Select Powerdown, Output Enable The L6116 is a high-performance, lowpower CMOS Static RAM. The storage circuitry is organized as 2048


    OCR Scan     		PDF L6116 L6116) L6116-L) L6116 L6116-L MIL-STD-883, IDT6116, CY7C128/CY6116 24-pin EL6116 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25

    chip diagram of ram chip 6116

    Abstract: ci 6116 RAM 6116
    Text: SGS-THOMSON KLH Tr[^© iìOa©S M K 6116 MK6116, MKI6116, MK6116L, MKI6116L (N/S - 15/20/25 2 K X 8 CMOS STATIC RAM • BYTEWYDE 2K x 8 CMOS STATIC RAM. .« lili ■ +5 VOLT ONLY WRITE/READ. ■ HIGH PERFORMANCE WITH LOW CMOS STANDBY POWER. PIN NAMES


    OCR Scan     		PDF MK6116, MKI6116, MK6116L, MKI6116L 24-PIN 28-PIN MK6116 384-bit 24-pin, chip diagram of ram chip 6116 ci 6116 RAM 6116

    RAM MK6116

    Abstract: MK6116-15 6116 ram 2k MK6116-25 DIP-24 MK6116 FZJ 105
    Text: SGS-THOMSON M K 6116 M MK6116, MKI6116, MK6116L, MKI6116L N/S - 15/20/25 2 K X 8 C M O S STATIC RAM i BYTEWYDE 2K x 8 CM OS STATIC RAM. £.j U i +5 VOLT ONLY WRITE/READ. i 24-PIN 600 MIL PLASTIC DIP, JEDEC PINOUT 28-PIN 330 MIL SOIC. i EQUAL W RITE AND READ CYCLE TIMES.


    OCR Scan     		PDF MK6116 MK6116, MKI6116, MK6116L, MKI6116L 24-PIN 28-PIN MK6116 384-bit 24-pin, RAM MK6116 MK6116-15 6116 ram 2k MK6116-25 DIP-24 FZJ 105

    6116 block diagram

    Abstract: No abstract text available
    Text: Irillll I V i l l l September 1989 HM 6116 DATA SHEET_ 2kx8 GENERAL PURPOSE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE RANGE : - 55 TO + 125 C


    OCR Scan     		PDF F12-H F0F11 6116 block diagram

    74c920

    Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
    Text: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous


    OCR Scan     		PDF 256x4, HM-6508 HM-6518 HM-6551 HM-6561 74C929 74C930 74C920 HM-6504 74c920 ram 6164 6116 RAM 2116 ram 2064 ram 4016 RAM 4045 RAM 6264 cmos ram

    4464 ram

    Abstract: us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory
    Text: In d u s try CMOS RAM C ross R eference H A R R IS C M O S R A M s F U J ID E SC RIPTIO N HARR IS AM O EDI rrsu H IT­ AC H I ID T M ITS U ­ BISHI M OT­ O R O LA N AT­ IO N A L 6508 6508 74C 929 6518 6518 74C 930 NEC O KI H A R R IS / RCA TO SH­ IB A N M O S,


    OCR Scan     		PDF 8816H 4464 ram us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory

    Untitled

    Abstract: No abstract text available
    Text: RPR 2K x 8 NON-VOLATILE RAM MsmumnsusA • • • • • • • • • GR281 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM


    OCR Scan     		PDF GR281 24-pin GR281 PD446,

    NVR2

    Abstract: pd446
    Text: GREENWICH 2K x 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • NVR2 Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Program RAM No limit to number of programming cycles Fits standard 24-pin socket


    OCR Scan     		PDF 24-pin PD446 NVR2

    Untitled

    Abstract: No abstract text available
    Text: apR FAST ACCESS - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout


    OCR Scan     		PDF GR281-4 24-pin GR281 PD446 GR281

    ram 8416

    Abstract: No abstract text available
    Text: FAST A C C E S S - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout


    OCR Scan     		PDF GR281-4 24-pin GR281 PD446 ram 8416