2SA1207
Abstract: 2SC2909 ITR02989
Text: Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob.
|
Original
|
PDF
|
ENN778F
2SA1207/2SC2909
2003B
2SA1207/2SC2909]
2SA1207
2SA1207
2SC2909
ITR02989
|
2SC2909
Abstract: 2SA1207 2sa120
Text: Ordering number:EN778E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob.
|
Original
|
PDF
|
EN778E
2SA1207/2SC2909
2SA1207/2SC2909]
SC-43
2SA1207
2SC2909
2SA1207
2sa120
|
2SB817 2SD1047
Abstract: 2SB817 2SD1047
Text: Ordering number : ENN680F SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features • Capable of being mounted easily because of one-point fixing type plastic molded package
|
Original
|
PDF
|
ENN680F
2SB817/2SD1047
40V/12A
2SB817
2SD1047.
2SB817 2SD1047
2SD1047
|
2SD2639
Abstract: No abstract text available
Text: 2SD2639 Ordering number : EN6960A SANYO Semiconductors DATA SHEET 2SD2639 NPN Triple Diffused Planar Silicon Transistor 140V / 12A, AF 60W Output Applications Features • • Wide ASO because of on-chip ballast resistance. Good dependence of fT on current and good HF characteristic.
|
Original
|
PDF
|
2SD2639
EN6960A
2SD2639
|
2SB1683
Abstract: 2SD2639 12AAF NPN transistor Electronic ballast
Text: Ordering number : ENN6960 2SB1683 / 2SD2639 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features • • Package Dimensions Wide ASO because of on-chip ballast resistance.
|
Original
|
PDF
|
ENN6960
2SB1683
2SD2639
2SB1683
2010C
2SD2639]
2SD2639
12AAF
NPN transistor Electronic ballast
|
IT0316
Abstract: 2SB1683 2SD2639
Text: Ordering number : ENN6960 2SB1683 / 2SD2639 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features • • Package Dimensions Wide ASO because of on-chip ballast resistance.
|
Original
|
PDF
|
ENN6960
2SB1683
2SD2639
2SB1683
2010C
2SD2639]
IT0316
2SD2639
|
2SB817
Abstract: 2sd1047
Text: Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions • Capable of being mounted easily because of onepoint fixing type plastic molded package Interchangeable with TO-3 .
|
Original
|
PDF
|
2SB817/2SD1047
40V/12A
2SB817/2SD1047]
2SB817
2SD1047.
2sd1047
|
2SB817
Abstract: 2SD1047 2SB817 2SD1047 2sd1047 equivalent 2SD1047F 4017 12AAF
Text: Ordering number:ENN680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Package Dimensions unit:mm 2022A [2SB817/2SD1047] 15.6 14.0 3.2 3.5 4.8 2.0 1.2 15.0 20.0 • Capable of being mounted easily because of onepoint fixing type plastic molded package Interchangeable with TO-3 .
|
Original
|
PDF
|
ENN680F
2SB817/2SD1047
40V/12A
2SB817/2SD1047]
2SB817
2SD1047.
2SD1047
2SB817 2SD1047
2sd1047 equivalent
2SD1047F
4017
12AAF
|
1k 1w
Abstract: STK42012 MG-200 STK4141X STK4201V TR10 TR11
Text: Ordering number:ENN4609A Thick Film Hybrid IC STK42012 2ch AF Power Amplifier Split Power Supply (60W + 60W min, THD = 0.4%) Features Package Dimensions • Muting circuit built-in to isolate all types of shock noise • Current mirror circuit for low 0.4% total harmonic distortion
|
Original
|
PDF
|
ENN4609A
STK42012
STK4201V
STK4141X
STK42012]
SIP-22
1k 1w
STK42012
MG-200
TR10
TR11
|
SIP22 package
Abstract: STK414
Text: Ordering number:ENN4609A Thick Film Hybrid IC STK42012 2ch AF Power Amplifier Split Power Supply (60W + 60W min, THD = 0.4%) Features Package Dimensions • Muting circuit built-in to isolate all types of shock noise • Current mirror circuit for low 0.4% total harmonic distortion
|
Original
|
PDF
|
ENN4609A
STK42012
STK4201V
STK4141X
STK42012]
SIP-22
SIP22 package
STK414
|
Untitled
Abstract: No abstract text available
Text: Ordering number:ENN4609A Thick Film Hybrid IC STK42012 2ch AF Power Amplifier Split Power Supply (60W + 60W min, THD = 0.4%) Features Package Dimensions • Muting circuit built-in to isolate all types of shock noise • Current mirror circuit for low 0.4% total harmonic distortion
|
Original
|
PDF
|
ENN4609A
STK42012
STK4201V
STK4141X
STK42012]
|
60w audio amplifier circuit diagram
Abstract: 51712 STK4051
Text: Ordering number:ENN*5171 Thick Film Hybrid IC STK405-100 2ch AF Power Amplifier Split Power Supply (60W + 60W min, THD = 10%) Preliminary Overview Package Dimensions The STK405-100, a member of the STK405-000 series, is a low-cost, 2-channel audio power amplifier hybrid IC that
|
Original
|
PDF
|
STK405-100
STK405-100,
STK405-000
STK401-000
STK405-100]
60w audio amplifier circuit diagram
51712
STK4051
|
80w audio amplifier circuit diagram
Abstract: 60w audio amplifier circuit diagram 370v 50w audio amplifier diagram 80W AUDIO AMPLIFIER DIAGRAM AC 290V
Text: Ordering number:ENN*5171 Thick Film Hybrid IC STK405-100 2ch AF Power Amplifier Split Power Supply (60W + 60W min, THD = 10%) Preliminary Overview Package Dimensions The STK405-100, a member of the STK405-000 series, is a low-cost, 2-channel audio power amplifier hybrid IC that
|
Original
|
PDF
|
STK405-100
STK405-100,
STK405-000
STK401-000
STK405-100]
80w audio amplifier circuit diagram
60w audio amplifier circuit diagram
370v
50w audio amplifier diagram
80W AUDIO AMPLIFIER DIAGRAM
AC 290V
|
STK405-050
Abstract: 80w audio amplifier circuit diagram STK405-110A stk4050
Text: Ordering number:ENN*5172 Thick Film Hybrid IC STK405-110 2ch AF Power Amplifier Split Power Supply (70W + 70W min, THD = 10%) Preliminary Overview Package Dimensions The STK405-110, a member of the STK405-000 series, is a low-cost, 2-channel audio power amplifier hybrid IC that
|
Original
|
PDF
|
STK405-110
STK405-110,
STK405-000
STK401-000
STK405-110]
STK405-050
80w audio amplifier circuit diagram
STK405-110A
stk4050
|
|
|
80w audio amplifier circuit diagram
Abstract: STK-405 10W Power Amplifier 80W AUDIO AMPLIFIER DIAGRAM 50w audio amplifier circuit diagram 70w amplifier
Text: Ordering number:ENN*5172 Thick Film Hybrid IC STK405-110 2ch AF Power Amplifier Split Power Supply (70W + 70W min, THD = 10%) Preliminary Overview Package Dimensions The STK405-110, a member of the STK405-000 series, is a low-cost, 2-channel audio power amplifier hybrid IC that
|
Original
|
PDF
|
STK405-110
STK405-110,
STK405-000
STK401-000
STK405-110]
80w audio amplifier circuit diagram
STK-405
10W Power Amplifier
80W AUDIO AMPLIFIER DIAGRAM
50w audio amplifier circuit diagram
70w amplifier
|
pcb 50601
Abstract: No abstract text available
Text: Ordering number:ENN5060 Thick Film Hybrid IC STK401-100 2ch AF Power Amplifier Split Power Supply (60W + 60W min, THD = 0.4%) Overview Package Dimensions The STK401-100 is a thick-film audio power amplifier IC belonging to a series in which all devices are pin compatible. This allows a single PCB design to be used to construct amplifiers of various output capacity simpaly by
|
Original
|
PDF
|
ENN5060
STK401-100
STK401-100
pcb 50601
|
D2694
Abstract: STK401-130
Text: Ordering number:ENN4897 Thick Film Hybrid IC STK401-130 2ch AF Power Amplifier Split Power Supply (100W + 100W min, THD = 0.4%) Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs is that all ICs within a given product series are pin compatible. This allows users to construct a product line of amplifiers with differing power output capacities using the same
|
Original
|
PDF
|
ENN4897
STK401-130
D2694
STK401-130
|
2sa2909
Abstract: 2SA1207 2SC2909 2SA29 2SA120
Text: Ordering number: EN 778E 2SA1207/2SC2909 N0.778E PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF 60W Predriver Applications i Features • Adoption of FBET process. . High breakdown voltage. •Excellent linearity of hp^ and small c0b.
|
OCR Scan
|
PDF
|
2SA1207/2SC2909
2SA1207
2sa2909
2SA1207
2SC2909
2SA29
2SA120
|
60w af applications Sanyo
Abstract: No abstract text available
Text: Ordering n um ber: ENN6960 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 Is m I yo i 140V / 12A, AF 60W Output Applications Features Package Dimensions . Wide ASO because of’ on-chip ballast resistance.
|
OCR Scan
|
PDF
|
ENN6960
2SB1683
2SD2639
2SB1683
2010C
60w af applications Sanyo
|
transistor 2sd1047
Abstract: 2SB817 2sd1047 605K transistor 1047 2SB817 2SD1047 2sb transistor transistor 2sb817 817 c w
Text: O rdering num ber: EN 680F 9 i 2SB817/2SD1047 N0.68OF 2SB817 : PNP Epitaxial P lanar Silicon Transistor 2SD1047 : NPN Triple Diffused Planar Silicon Transistor I 140V/12A, AF 60W Output Applications F e a tu re s • Capable of being mounted easily because of one-point fixing type plastic molded package
|
OCR Scan
|
PDF
|
2SB817/2SD1047
2SB817
2SD1047
40V/12A,
2SB817
2SD1047.
00S0D02
2SD1047
17/2S
transistor 2sd1047
605K
transistor 1047
2SB817 2SD1047
2sb transistor
transistor 2sb817
817 c w
|
3B817
Abstract: 2SB817 2SD1047 transistor 2sd1047 2SB817 2SD1047
Text: Ordering number: EN 680F 2SB817/2SD1047 2SB817 : P N P Ep itax ial Plan ar Silicon Transistor 2SD1047 : N P N Triple Diffused Plan ar Silicon Transistor 140V/12A, AF 60W Output Applications F e atu re s •Capable of being mounted easily because of one-point fixing type plastic molded package
|
OCR Scan
|
PDF
|
2SB817/2SD1047
2SB817
2SD1047
40V/12A,
2SB817
2SD1047.
3B817
2SD1047
transistor 2sd1047
2SB817 2SD1047
|
Untitled
Abstract: No abstract text available
Text: Ordering number: EN 778E 2SA1207/2SC2909 SÎ0.778E P N P /N PN E pitaxial P la n a r Silicon T ran sisto rs SA i YO r. High-Voltage Switching, AF 60W Predriver Applications F e a tu re s - Adoption of FBET process. . H igh breakdow n voltage. • E xcellent lin e arity of hpg and sm all c0b.
|
OCR Scan
|
PDF
|
2SA1207/2SC2909
2SA1207
SC-51
rO-92
3C-43
|
Untitled
Abstract: No abstract text available
Text: Ordering number: EN 778E 2SA1207/2SC2909 I P N P/N PN E p itax ial P la n a r Silicon T ran sisto rs S A iV D J High-Voltage Switching, AF 60W Predriver Applications F e a tu re s • Adoption of FBET process. . H igh breakdow n voltage. - E xcellent lin e arity of hpE and sm all c0b.
|
OCR Scan
|
PDF
|
2SA1207/2SC2909
2SA1207
SC-43
4190MO/3187AT/2255MY
|
STK4151II
Abstract: STK4191II STK4131II STK4141II STK4171II STK4121II STK4151-II STK4181II STK4181-II STK4121-II
Text: 7997076 SANYO SEMICONDUCTOR CORP 7b SANYO SEMICONDUCTOR CORP S TK 4018X SERIES "ÜJ 7^707^ GGDn? 5 D y z y </-<?£>£>/ 7ÓC 01977 C IR C U IT D R A W I N G N o ,6 0 2 0 t h i c k film h y b r id IC 2 5 W MIN TO 7DW MIN AF POWER AMP [DUAL-SUPPLY] 4062 Function
|
OCR Scan
|
PDF
|
4018X
STK4026X:
STK4028X:
STK4030X:
STK4032X:
STK4034X:
45Wmin.
STK4018X
/100kHz,
STK4101II:
STK4151II
STK4191II
STK4131II
STK4141II
STK4171II
STK4121II
STK4151-II
STK4181II
STK4181-II
STK4121-II
|
