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    60V TRANSISTOR NPN 2A SWITCHING APPLICATIONS Search Results

    60V TRANSISTOR NPN 2A SWITCHING APPLICATIONS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    60V TRANSISTOR NPN 2A SWITCHING APPLICATIONS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD439

    Abstract: BD441 60V transistor npn 2a transistor BD441 60V transistor npn 2a switching applications BD440 BD442
    Text: BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol : BD439 Rating Unit 60 V 80 V 60 V 80 V 60 V


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    PDF BD439/441 O-126 BD440, BD442 BD439 BD441 BD439 BD441 60V transistor npn 2a transistor BD441 60V transistor npn 2a switching applications BD440

    60V transistor npn 2a switching applications

    Abstract: 60V transistor npn 2a BD719 Audio Output Transistor Amplifier BD720
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD719 DESCRIPTION •DC Current Gain: hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage : V BR CEO= 60V(Min) ·Complement to type BD720 APPLICATIONS ·Designed for use in audio output and general purpose


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    PDF BD719 BD720 60V transistor npn 2a switching applications 60V transistor npn 2a BD719 Audio Output Transistor Amplifier BD720

    Untitled

    Abstract: No abstract text available
    Text: BD439/441 BD439/441 Medium Power Linear and Switching Applications • Complement to BD440, BD442 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCES


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    PDF BD439/441 BD440, BD442 O-126 BD439 BD441

    BD681 cross reference

    Abstract: bd677as BD679AS 679a
    Text: BD675A/677A/679A/681 BD675A/677A/679A/681 Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base


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    PDF BD675A/677A/679A/681 BD676A, BD678A, BD680A BD682 O-126 BD675A BD677A BD679A BD681 cross reference bd677as BD679AS 679a

    120v relay driver

    Abstract: BFX34
    Text: BFX34 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT GENERAL PURPOSE TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) DESCRIPTION: The BFX34 is a silicon Epitaxial Planar NPN transistor in a TO-39 case, intended for high current applications.


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    PDF BFX34 BFX34 120v relay driver

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDY71X • High Power • Hermetic TO-66 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO


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    PDF BDY71X O-213AA)

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDY71X • High Power • Hermetic TO-66 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO


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    PDF BDY71X O-213AA)

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16SMD / BDS17SMD • High Voltage • Hermetic SMD1 TO-276AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


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    PDF BDS16SMD BDS17SMD O-276AB) BDS16 BDS17

    IC 9550

    Abstract: TO276AA
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16SMD05 / BDS17SMD05 • High Voltage • Hermetic SMD05 TO-276AA Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


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    PDF BDS16SMD05 BDS17SMD05 SMD05 O-276AA) BDS16 BDS17 IC 9550 TO276AA

    Transistor 3-347

    Abstract: 3-347
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / BDS17 • High Voltage • Hermetic TO220M T0-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


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    PDF BDS16 BDS17 O220M T0-257AB) BDS17 O-257AB) Transistor 3-347 3-347

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16SMD05 / BDS17SMD05 • High Voltage • Hermetic SMD05 TO-276AA Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


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    PDF BDS16SMD05 BDS17SMD05 SMD05 O-276AA) BDS16 BDS17

    flyback converter DC/DC 400V

    Abstract: NPN transistor 10w 1a vce 400v capacitor 100MF 100v 6V DC-AC Fluorescent lamp BY206 Lamps FLASH TUBE xenon inverter 12v to 220 ac mosfet based TL8W step up DC DC converter in 6v out 9V xenon inverter circuits
    Text: Application Note 7 Issue 2 January 1996 The Use of Zetex E-Line Transistors in DC-DC Converters An Introduction and Typical Applications David Bradbury What Are DC-DC Converters? DC-DC Converters are circuits designed to match loads to the power sources available. Generally, they accept power


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    PDF ZTX850 /TO92 flyback converter DC/DC 400V NPN transistor 10w 1a vce 400v capacitor 100MF 100v 6V DC-AC Fluorescent lamp BY206 Lamps FLASH TUBE xenon inverter 12v to 220 ac mosfet based TL8W step up DC DC converter in 6v out 9V xenon inverter circuits

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / BDS17 • High Voltage • Hermetic TO220M T0-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


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    PDF BDS16 BDS17 O220M T0-257AB) BDS16 O-257AB)

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16SMD / BDS17SMD • High Voltage • Hermetic SMD1 TO-276AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


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    PDF BDS16SMD BDS17SMD O-276AB) BDS16 BDS17

    60V transistor npn 2a switching applications

    Abstract: 2N6107 2N6292 60V transistor npn 2a
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6292 DESCRIPTION •DC Current Gain: hFE = 30-150@ IC= 2A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 70V(Min) ·Complement to Type 2N6107 APPLICATIONS ·Designed for use in general-purpose amplifier and


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    PDF 2N6292 2N6107 60V transistor npn 2a switching applications 2N6107 2N6292 60V transistor npn 2a

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR NPN TRANSISTOR 2N3421 • Hermetic TO-39 Metal package. • Ideally suited for Small Signal General Purpose and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO


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    PDF 2N3421 Junc0396 O-205AD)

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR NPN TRANSISTOR 2N3421 • Hermetic TO-39 Metal package. • Ideally suited for Small Signal General Purpose and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO


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    PDF 2N3421 Ju0396 O-205AD)

    Transistor B C 458

    Abstract: c 458 c transistor 60V transistor npn 2a switching applications bd533 Transistor n 535
    Text: BD533/535/537 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE TO-220 • Com plem ent to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C olle ctor Base Voltage C olle ctor Em itter Voltage


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    PDF BD533/535/537 BD534, BD536 BD538 O-220 BD533 BD535 BD537 Transistor B C 458 c 458 c transistor 60V transistor npn 2a switching applications Transistor n 535

    60V transistor npn 2a switching applications

    Abstract: No abstract text available
    Text: BD533/535/537 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • Complement to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Emitter Voltage Symbol BD533 Rating


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    PDF BD533/535/537 BD534, BD536 BD538 BD533 BD535 BD537 60V transistor npn 2a switching applications

    t460 transistor

    Abstract: 2N1724 60V transistor npn 2a switching applications i442 T460 2IM1724
    Text: IMPIM S ilic o n P o w e r T ra n sisto r 2IM1724 Application The SSDI 2N1724 is a NPN double epitaxial silicon power transistor designed for high reliability opera­ tion in military, space and indus­ trial applications. Fast switching speeds, low saturation voltages


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    PDF 2IM1724 2N1724 200mA t460 transistor 60V transistor npn 2a switching applications i442 T460 2IM1724

    BD441

    Abstract: No abstract text available
    Text: BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C o lle cto r B ase Voltage C o lle cto r Em itter Voltage C o lle cto r Em itter V oltage


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    PDF BD439/441 BD440, BD442 O-126 BD439 BD441

    BD681

    Abstract: BD677A 681 transistor bd681 TRANSISTOR
    Text: BD675A/677A/679A/681 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD676A, BD678A, BD680A and BD682 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage


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    PDF BD675A/677A/679A/681 BD676A, BD678A, BD680A BD682 BD675A BD677A BD679A BD681 681 transistor bd681 TRANSISTOR

    TRANSISTOR BC 456

    Abstract: BD441
    Text: BD439/441 NPN EPITAXIAL SILICON TRAN SISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD440, BD442 respectively A B S O L U T E MAXIMUM RATINGS C h a ra c te ristic Collector B ase Voltage S ym bol BD439 Rating V cao BD441 Collector Emitter Voltage


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    PDF BD439/441 O-126 BD440, BD442 BD439 BD441 BD441 TRANSISTOR BC 456

    Untitled

    Abstract: No abstract text available
    Text: BD533/535/537_ NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • Complement to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Symbol Collector Emitter Voltage : BD533


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    PDF BD533/535/537_ BD534, BD536 BD538 BD533 BD535 BD537