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    60V SMALL SIGNAL TRANSISTOR Search Results

    60V SMALL SIGNAL TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH8R316MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -90 A, 0.0064 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    60V SMALL SIGNAL TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 907

    Abstract: SOT-26 ds35106
    Text: DMMT2907A ADVANCE INFORMATION 60V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > -60V ICM = -1A Peak Pulse Current General purpose NPN transistors ideally suited for low power


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    PDF DMMT2907A AEC-Q101 J-STD-020 MIL-STD-202, DS35106 marking 907 SOT-26

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    Abstract: No abstract text available
    Text: DMMT2907A ADV AN CE I N FORM AT I ON 60V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > -60V ICM = -1A Peak Pulse Current General purpose NPN transistors ideally suited for low power


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    PDF DMMT2907A AEC-Q101 DS35106

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    Abstract: No abstract text available
    Text: MMDT2907A 60V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Ultra-Small Surface Mount Package   Epitaxial Planar Die Construction   Ideal for Low Power Amplification and Switching  Totally Lead-Free & Fully RoHS compliant Notes 1 & 2


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    PDF MMDT2907A OT363 J-STD-020 AEC-Q101 MIL-STD202, DS30109

    SMD TRANSISTOR MARKING DE

    Abstract: VCEO-60V SMD TRANSISTOR MARKING Dd marking DC 2SC3444
    Text: Transistors SMD Type Small Signal Transistor 2SC3444 Features High voltage VCEO=60V. High collector current Ic=1A . High collector dissipation Pc=500mW. Low VCE(sat): VCE(sat)=0.11V typ(@Ic=500mA,IB=25mA). Small package for mounting. Absolute Maximum Ratings Ta = 25


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    PDF 2SC3444 500mW. 500mA 100mA -10mA SMD TRANSISTOR MARKING DE VCEO-60V SMD TRANSISTOR MARKING Dd marking DC 2SC3444

    Untitled

    Abstract: No abstract text available
    Text: MMBT2907A 60V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222A Ideal for Low Power Amplification and Switching


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    PDF MMBT2907A MMBT2222A) AEC-Q101 J-STD-020 DS30040

    K2F transistor

    Abstract: pnp k2f K2F DIODES K2F 9 K2F single Application of MMBT2907A K2F marking
    Text: MMBT2907A 60V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222A Ideal for Low Power Amplification and Switching


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    PDF MMBT2907A MMBT2222A) AEC-Q101 J-STD-020 MMBT2907A-7-F MMBT2907A-13-F MMBT2907AQand DS30040 K2F transistor pnp k2f K2F DIODES K2F 9 K2F single Application of MMBT2907A K2F marking

    2SA20

    Abstract: 2SA2090 2SC5868
    Text: Medium power transistor 60V, 0.5A 2SC5868 Dimensions (Unit : mm) TSMT3 0.4 (1) (3) 1.9 Applications Small signal low frequency amplifier High speed switching 0.6 1.0MAX 0.85 0.7 0.1 0.3 (1) Base (2) Emitter (3) Collector 0.16 (2) 0.95 0.95 2.8 1.6


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    PDF 2SC5868 500mA) 100mA, 2SA2090 R1120A 2SA20 2SA2090 2SC5868

    K2F TRANSISTOR

    Abstract: MMBT2907A-13 C2F marking SOT23
    Text: MMBT2907A 60V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222A Ideal for Low Power Amplification and Switching


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    PDF MMBT2907A MMBT2222A) AEC-Q101 J-STD-020 DS30040 K2F TRANSISTOR MMBT2907A-13 C2F marking SOT23

    Untitled

    Abstract: No abstract text available
    Text: MMBT2907A 60V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data •         Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Complementary NPN Type: MMBT2222A Totally Lead-Free & Fully RoHS compliant Notes 1 & 2


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    PDF MMBT2907A MMBT2222A AEC-Q101 J-STD-020 MIL-STD-202, DS30040

    k1P transistor sot 23

    Abstract: k1p sot-23 K1p TRANSISTOR DUAL NPN K1P k1p sot 23 sot-23 Marking k1p MMDT2222A MMDT2907A
    Text: BL Galaxy Electrical Production specification Dual NPN Small Signal Surface Mount Transistor MMDT2222A FEATURES z Epitaxial planar die construction. z Complementary PNP type available Pb Lead-free MMDT2907A. z Ultra-small surface mount package. APPLICATIONS


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    PDF MMDT2222A MMDT2907A. OT-363 OT-23 BL/SSSTE001 65Typical k1P transistor sot 23 k1p sot-23 K1p TRANSISTOR DUAL NPN K1P k1p sot 23 sot-23 Marking k1p MMDT2222A MMDT2907A

    2N2222A metal package

    Abstract: 2N2221A-2N2222A of 2N2222A
    Text: Small Signal General Purpose Transistors NPN 2N2221A/2N2222A Small Signal General Purpose Transistors (NPN) Features • Switching and Linear Application DC and VHF Amplifier Application • RoHS Compliant TO-18 Mechanical Data TO-18, Metal can package Case:


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    PDF 2N2221A/2N2222A MIL-STD-202, 2N2221A 2N2222A 2N2222A metal package 2N2221A-2N2222A of 2N2222A

    marking code k22

    Abstract: CMKT2222A transistor k22
    Text: Central CMKT2222A ULTRAminiTM SURFACE MOUNT DUAL NPN SMALL SIGNAL SWITCHING TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2222A type is a dual NPN small signal switching transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount


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    PDF CMKT2222A OT-363 x10-4 100mA, 150mA, marking code k22 CMKT2222A transistor k22

    dual npn 500ma

    Abstract: npn switching transistor 60v CMLT2222A MARKING CODE l22
    Text: Central CMLT2222A SURFACE MOUNT DUAL NPN SMALL SIGNAL SWITCHING TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2222A type is a dual NPN small signal switching transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount


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    PDF CMLT2222A OT-563 x10-4 100mA, 150mA, dual npn 500ma npn switching transistor 60v CMLT2222A MARKING CODE l22

    k22 transistor

    Abstract: CMKT2222A
    Text: Central CMKT2222A ULTRAminiTM SURFACE MOUNT DUAL NPN SMALL SIGNAL SWITCHING TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2222A type is a dual NPN small signal switching transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount


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    PDF CMKT2222A OT-363 x10-4 100mA, 150mA, k22 transistor CMKT2222A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT2222A DUAL TRANSISTOR DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  DESCRIPTION The UTC MMDT2222A is a Dual NPN small signal surface mount transistor. It’s suitable for low power amplification and switch.  FEATURES


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    PDF MMDT2222A MMDT2222A MMDT2222AG-AL6-R OT-363 QW-R218-016

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistor MMBT2222A-G NPN RoHS Device Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) Mechanical data 0.047(1.20) 1 -Case: SOT-23, molded plastic. 2 0.083(2.10)


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    PDF MMBT2222A-G OT-23 OT-23, MIL-STD-750, 150mA, QW-BTR30

    marking code k22

    Abstract: 2222a transistor 2222a data sheet dual npn 500ma CMKT2222A transistor 2222a
    Text: CMKT2222A SURFACE MOUNT ULTRAminiTM DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2222A consists of two individually isolated 2222A NPN silicon transistors, manufactured by the epitaxial


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    PDF CMKT2222A OT-363 OT-363 150mA, x10-4 marking code k22 2222a transistor 2222a data sheet dual npn 500ma CMKT2222A transistor 2222a

    Untitled

    Abstract: No abstract text available
    Text: CMKT2222A SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2222A consists of two individually isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar


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    PDF CMKT2222A OT-363 x10-4 150mA,

    Untitled

    Abstract: No abstract text available
    Text: 2N2920DCSM DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 3 1 4 A 6 5 0.23 rad. (0.009) FEATURES 4.32 ± 0.13 (0.170 ± 0.005) 2 2.54 ± 0.13 (0.10 ± 0.005)


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    PDF 2N2920DCSM 2N2920DCSM-JQR" 2N2920DCSM-JQR-B 5/10u 60MHz

    transistor 2222a

    Abstract: CMLT2222A MARKING CODE l22 2222a central
    Text: Central CMLT2222A SURFACE MOUNT PICOminiTM DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial


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    PDF CMLT2222A OT-563 OT-563 100mA, 150mA, x10-4 transistor 2222a CMLT2222A MARKING CODE l22 2222a central

    2222a

    Abstract: marking code k22 dual npn 500ma CMKT2222A 2222a central
    Text: Central CMKT2222A TM Semiconductor Corp. ULTRAminiTM SURFACE MOUNT DUAL NPN SMALL SIGNAL SWITCHING TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial


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    PDF CMKT2222A OT-363 OT-363 100mA, 150mA, x10-4 2222a marking code k22 dual npn 500ma CMKT2222A 2222a central

    marking code k22

    Abstract: 2222a CMKT2222A transistor 2222a
    Text: CMKT2222A SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2222A consists of two individually isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar


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    PDF CMKT2222A OT-363 150mA, x10-4 marking code k22 2222a CMKT2222A transistor 2222a

    PN3644

    Abstract: PN3645 silicon planar epitaxial transistors
    Text: PN 3644 PN3645 ^ PNP SILICON PLANAR ÏPIÎTAXIAL TRANSISTORS PN 3644, PN 3645 PNP are silicon planar epitaxial transistors designed for small signal general purpose amplifiers and switches. EBC ABSOLUTE MAXIMUM RATINGS PN36#5 Collector-Base Voltage 60V Collector-Emitter Voltage


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    PDF PN3645 PN3644 500mA 625mW PN3645 silicon planar epitaxial transistors

    CL313

    Abstract: CL314
    Text: U L O IO CL314 SILICON TRANSISTORS w w im fflfr T r " n m nffl" •■*. DESCRIPTION CL313, C L314 are complementary silicon planar epitaxial transistors'for use AF small signal amplifiers and drivers. CL313. 60V 50V 6V ABSOLUTE MAXIMUM RATINGS


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    PDF CL314 CL313, 200mA 300mW CL313 100mA