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    60V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A HEX Search Results

    60V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A HEX Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    60V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A HEX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: International Rectifier Product Detail Page Page 1 of 2 Part Se Part: AUIRFB3806 Description: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package Support Docs: N/A Commercial Datasheet Automotive Market IR serves the automotive market with a dedicated product portfolio, with high quality and automotive


    Original     		PDF AUIRFB3806 O-220AB O-220AB

    Untitled

    Abstract: No abstract text available
    Text: International Rectifier Product Detail Page Page 1 of 2 Part Se Part: AUIRF1018E Description: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package Support Docs: N/A Commercial Datasheet Reliability Report Automotive Market IR serves the automotive market with a dedicated product portfolio, with high quality and automotive


    Original     		PDF AUIRF1018E O-220AB O-220AB

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    IRFP60A

    Abstract: 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413
    Text: powireview The Technology Update for People in Power New HEXFET MOSFETs for Every Power Supply Application IR Chip Set First to Meet Newest Notebook PC Power Standard New P-Channel HEXFET® Power MOSFETs Offer Best Performance for Low Voltage Circuits New Schottky Diodes


    Original     		PDF O-220 Q101-Compliant IRFP60A 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413

    F53 DIODE

    Abstract: IRF9Z24L IRF9Z24S
    Text: PD - 9.912A IRF9Z24S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24S l Low-profile through-hole (IRF9Z24L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.28Ω


    Original     		PDF IRF9Z24S/L IRF9Z24S) IRF9Z24L) 12-Mar-07 F53 DIODE IRF9Z24L IRF9Z24S

    IRF9Z14L

    Abstract: IRF9Z14S
    Text: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω


    Original     		PDF IRF9Z14S/L IRF9Z14S) IRF9Z14L) 12-Mar-07 IRF9Z14L IRF9Z14S

    IRF9Z34

    Abstract: IRF9Z34L IRF9Z34S
    Text: PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRF9Z34S l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω


    Original     		PDF IRF9Z34S/L IRF9Z34S) IRF9Z34L) 12-Mar-07 IRF9Z34 IRF9Z34L IRF9Z34S

    IRF9Z34L

    Abstract: IRF9Z34S
    Text: PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRF9Z34S l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω


    Original     		PDF IRF9Z34S/L IRF9Z34S) IRF9Z34L) IRF9Z34L IRF9Z34S

    "thermal via" PCB D2PAK

    Abstract: 9912A thermal IRF9Z24L IRF9Z24S 9912A
    Text: PD - 9.912A IRF9Z24S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24S l Low-profile through-hole (IRF9Z24L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.28Ω


    Original     		PDF IRF9Z24S/L IRF9Z24S) IRF9Z24L) "thermal via" PCB D2PAK 9912A thermal IRF9Z24L IRF9Z24S 9912A

    IRF9Z34S

    Abstract: IRF9Z34L "thermal via" PCB D2PAK
    Text: PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRF9Z34S l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω


    Original     		PDF IRF9Z34S/L IRF9Z34S) IRF9Z34L) IRF9Z34S IRF9Z34L "thermal via" PCB D2PAK

    IRF9Z14L

    Abstract: IRF9Z14S marking 67A
    Text: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω


    Original     		PDF IRF9Z14S/L IRF9Z14S) IRF9Z14L) IRF9Z14L IRF9Z14S marking 67A

    IRF9Z14L

    Abstract: IRF9Z14S
    Text: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω


    Original     		PDF IRF9Z14S/L IRF9Z14S) IRF9Z14L) IRF9Z14L IRF9Z14S

    HEXFET Power MOSFET designer manual

    Abstract: GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent
    Text: Application Note AN-937 Gate Drive Characteristics and Requirements for HEXFET Power MOSFETs Table of Contents Page 1. Gate Drive Vs Base Drive . 1 2. Gate Voltage Limitations . 2


    Original     		PDF AN-937 500ns/div HEXFET Power MOSFET designer manual GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent

    GBAN-PVI-1

    Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary
    Text: Index AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit


    Original     		PDF AN-937 500ns/div GBAN-PVI-1 ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω


    Original     		PDF IRF9Z14S/L IRF9Z14S) IRF9Z14L) 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRF9Z34S l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω


    Original     		PDF IRF9Z34S/L IRF9Z34S) IRF9Z34L) 08-Mar-07

    IRF9Z24S/L

    Abstract: No abstract text available
    Text: PD - 9.912A IRF9Z24S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24S l Low-profile through-hole (IRF9Z24L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.28Ω


    Original     		PDF IRF9Z24S/L IRF9Z24S) IRF9Z24L) 08-Mar-07 IRF9Z24S/L

    AN-944A

    Abstract: AN944A AN934B IRF130 IRF430 IRF440 what is THERMAL RUNAWAY IN RECTIFIER MOSFET i-pak Package zener diode MOSFET reliability report format AN949A High frequency switching
    Text: EXECUTIVE SUMMARY FIFTY FIFTH QUARTERLY REPORT This Quarterly Reliability Report is a summary of test data covering the previous twenty four months of component testing at International Rectifier's HEXFET America facility in Temecula, California. The products tested include HEXFETs packaged in TO-220,


    Original     		PDF O-220, O-247 O-220 O-220/D2Pak AN-944A AN944A AN934B IRF130 IRF430 IRF440 what is THERMAL RUNAWAY IN RECTIFIER MOSFET i-pak Package zener diode MOSFET reliability report format AN949A High frequency switching

    irf 1740

    Abstract: 48V SMPS smps 48v 12v
    Text: PD- 96128 IRF7478QPbF SMPS MOSFET HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free Description


    Original     		PDF IRF7478QPbF irf 1740 48V SMPS smps 48v 12v

    Untitled

    Abstract: No abstract text available
    Text: INTE RNATIONAL RECTIFIER 2bE D • HflSSMSS OülOlfi? Q ■ Government/ Space Products T-39-ôl International ^¡Rectifier Radiation Hard HEXFETs N-Channel V d s Drain Part Number Source Voltage Volts On-sitata Resistance (Ohms) IRHN7150 IRHN8150 IRHN7250


    OCR Scan     		PDF T-39-Ã IRHN7150 IRHN8150 IRHN7250 IRHN8250 IRHN7450 IRHN8450 IRHE7110 IRHE8110 IRHE7130

    IRF520 application note

    Abstract: IRF52Q Irf520 spice irf522 AN975 A44B irf521
    Text: HE D I Data Sheet No. PD-9.313J 40 55 4 5 5 □□00 44 2 2 | T-39-11 INTERNATIONAL RE CT IFIER INTERNATIONAL RECTIFIER I I O R I REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF52Q IRFS21


    OCR Scan     		PDF T-39-11 IRF52Q IRFS21 IRFS23 T0-220AB C-197 IRF520, IRF521, IRF522, IRF523 IRF520 application note Irf520 spice irf522 AN975 A44B irf521

    9437B

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.437B I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL IS EACH POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE) Product Summary 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs


    OCR Scan     		PDF IRFG5110 IRFG5110 I-222 9437B

    IRFT003

    Abstract: automatic volume control using lm358 IRFT003http://datasheet.datasheetarchive.com/originals/scans/Scans-021/ScansEX27879.pdf disadvantages of automatic room power control CPY203E lm358 current sense 10a disadvantages of automatic room control IRCC034 LM324 pin configuration of TLC271
    Text: INTERNATIONAL RECTIFIER bSE D • 4ÛS5MS5 QQlbSOB 3SÔ ■ INR Data Sheet No. PD-5.014D International [^Rectifier HEXFET Power Module CPY203E & IRFT003 Power H-Brldges Description/Featu res Product Summary The CPY203E and the IRFT003 are intended for use


    OCR Scan     		PDF S54SH CPY203E IRFT003 CPY203E automatic volume control using lm358 IRFT003http://datasheet.datasheetarchive.com/originals/scans/Scans-021/ScansEX27879.pdf disadvantages of automatic room power control lm358 current sense 10a disadvantages of automatic room control IRCC034 LM324 pin configuration of TLC271

    Untitled

    Abstract: No abstract text available
    Text: P D -9.911 A International IRF9Z14S/L 3BR Rectifier HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z14S • Low-profile through-hole (IRF9Z14L) • 175°C Operating Temperature • Fast Switching • P- Channel • Fully Avalanche Rated


    OCR Scan     		PDF IRF9Z14S) IRF9Z14L)