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    60V 3A DIODE Search Results

    60V 3A DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    60V 3A DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: XBS306S17 ETR1616-002 Schottky Barrier Diode, 3A, 60V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.59V TYP. ●Rectification Forward Current : IF(AV)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=60V


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    PDF XBS306S17 ETR1616-002

    XBS306S17

    Abstract: No abstract text available
    Text: XBS306S17 ETR1616-002 Schottky Barrier Diode, 3A, 60V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.59V TYP. ●Rectification Forward Current : IF(AV)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=60V


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    PDF XBS306S17 ETR1616-002 XBS306S17

    XBS306S17

    Abstract: 306S17 XBS30
    Text: XBS306S17R-G ETR1616-002a Schottky Barrier Diode, 3A, 60V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.59V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=60V


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    PDF XBS306S17R-G ETR1616-002a XBS306S17 306S17 XBS30

    Untitled

    Abstract: No abstract text available
    Text: XBS306S17R-G ETR1616-002a Schottky Barrier Diode, 3A, 60V Type FEATURES APPLICATIONS Forward Voltage : VF=0.59V TYP. Rectification Forward Current : IF(AVE)=3A Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=60V ABSOLUTE MAXIMUM RATINGS


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    PDF XBS306S17R-G ETR1616-002a

    Untitled

    Abstract: No abstract text available
    Text: RSR030N06 Nch 60V 3A Power MOSFET Datasheet lOutline VDSS 60V RDS on (Max.) 85mW ID 3A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).


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    PDF RSR030N06 R1120A

    Untitled

    Abstract: No abstract text available
    Text: RSR030N06 Nch 60V 3A Power MOSFET Datasheet lOutline VDSS 60V RDS on (Max.) 85mW ID 3A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).


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    PDF RSR030N06 R1120A

    Untitled

    Abstract: No abstract text available
    Text: RSR030N06 Datasheet Nch 60V 3A Power MOSFET lOutline VDSS 60V RDS on (Max.) 85mW ID 3A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).


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    PDF RSR030N06 R1120A

    SD833-06

    Abstract: SD833 60V 3A diode mark BC TL121
    Text: SD833-06 3A (60V / 3A ) Schottky barrier diode 0.8 Outline drawings, mm Characteristics SD833-06 Units Condition 3 A 4.0 BC Tj=125°C, typ 0.8 V V 0.2 1.2 IO 60 0.5 max. VRRM VF 5.0 Major characteristics 1.5 2.5 Features Low VF High voltage 60V Low height : 1.2mm max.


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    PDF SD833-06 SD833-06 SD833 60V 3A diode mark BC TL121

    n-channel so8 60v

    Abstract: STS4C3F60L s4c3f60l Back Light Inverter
    Text: STS4C3F60L N-CHANNEL 60V - 0.045 Ω - 4A SO-8 P-CHANNEL 60V - 0.100 Ω - 3A SO-8 StripFET MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID STS4C3F60L (N-Channel) STS4C3F60L (P-Channel) 60 V 60 V < 0.055 Ω < 0.120 Ω 4A 3A •


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    PDF STS4C3F60L n-channel so8 60v STS4C3F60L s4c3f60l Back Light Inverter

    capacitor 106 35K

    Abstract: PH- 36 20-PIN SLMA002 TPS54362QPWPRQ1 soft start circuit 555 timer PH-17 DIODE 860PF2
    Text: TPS54362-Q1 www.ti.com. SLVS845 – MARCH 2009 3A, 60V STEP DOWN DC/DC CONVERTER WITH LOW Iq


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    PDF TPS54362-Q1 SLVS845 200kHz capacitor 106 35K PH- 36 20-PIN SLMA002 TPS54362QPWPRQ1 soft start circuit 555 timer PH-17 DIODE 860PF2

    capacitor 106 35K

    Abstract: Magnetic Field Sensor FLC 100 20-PIN SLMA002 TPS54362QPWPRQ1 ph-17 diode
    Text: TPS54362-Q1 www.ti.com. SLVS845 – MARCH 2009 3A, 60V STEP DOWN DC/DC CONVERTER WITH LOW Iq


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    PDF TPS54362-Q1 SLVS845 200kHz capacitor 106 35K Magnetic Field Sensor FLC 100 20-PIN SLMA002 TPS54362QPWPRQ1 ph-17 diode

    mosfet pch 3a 60v

    Abstract: JESD97 STS4C3F60L
    Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly


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    PDF STS4C3F60L STS4C3F60L mosfet pch 3a 60v JESD97

    Untitled

    Abstract: No abstract text available
    Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly


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    PDF STS4C3F60L STS4C3F60L

    JESD97

    Abstract: STS4C3F60L s4c3f60l mosfet pch 3a 60v
    Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly


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    PDF STS4C3F60L STS4C3F60L JESD97 s4c3f60l mosfet pch 3a 60v

    FZT751QTA

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT751 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -60V IC = -3A high Continuous Current ICM = -6A Peak Pulse Current


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    PDF FZT751 OT223 -300mV FZT651 AEC-Q101 OT223 J-STD-020 MIL-STD-202, DS32208 FZT751QTA

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT651 60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 60V Maximum continuous current IC = 3A Low Saturation Voltage


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    PDF FZT651 OT223 FZT751 AEC-Q101 OT223 J-STD-020 MIL-STD-202, DS33149

    LT3992FE

    Abstract: LT3992EFE
    Text: LT3992 Monolithic Dual Tracking 3A Step-Down Switching Regulator Description Features Wide Input Range: – Operation from 3V to 60V n Independent Supply, Shutdown, Soft-Start, UVLO, Programmable Current Limit and Programmable Power Good for Each 3A Regulator


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    PDF LT3992 250kHz DFN-10, MSOP-10E DFN-16, MSOP-16E LT3992FE LT3992EFE

    LT3992FE

    Abstract: Monolithic Dual Tracking 3A Step-Down Switching Regulator
    Text: LT3992 Monolithic Dual Tracking 3A Step-Down Switching Regulator Description Features Wide Input Range: – Operation from 3V to 60V n Independent Supply, Shutdown, Soft-Start, UVLO, Programmable Current Limit and Programmable Power Good for Each 3A Regulator


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    PDF LT3992 250kHz DFN-10, MSOP-10E DFN-16, MSOP-16E LT3992FE Monolithic Dual Tracking 3A Step-Down Switching Regulator

    c81 006

    Abstract: erc81 ERC81-006
    Text: ERC81-006 3A (60V / 3A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø 6.4 ø 1.2 7.5 30 MIN. 30 MIN. Marking Features Color code : Silver Low VF Abridged type name High reliability by planer design Voltage class Lot No. Applications C81 -006 02 •··


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    PDF ERC81-006 c81 006 erc81 ERC81-006

    c81 006

    Abstract: No abstract text available
    Text: ERC81-006 3A (60V / 3A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø 6.4 ø 1.2 7.5 30 MIN. 30 MIN. Marking Features Color code : Silver Low VF Abridged type name High reliability by planer design Voltage class Lot No. Applications C81 -006 02 •··


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    PDF ERC81-006 c81 006

    MARKING KN2

    Abstract: No abstract text available
    Text: DXT651 60V NPN LOW VCE sat TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V  Case: SOT89  IC = 3A high Continuous Current  Case material: Molded Plastic. “Green” Molding Compound.  Low saturation voltage VCE(sat) < 300mV @ 1A 


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    PDF DXT651 300mV DXT751 AEC-Q101 J-STD-020 MIL-STD-202, DS31184 MARKING KN2

    Untitled

    Abstract: No abstract text available
    Text: 1/2 HIGH POWER SINGLE DIODES RECTIFIER & SCHOTTKY BARRIER DIODES • RECTIFIER DIODES AVAILABLE UP TO 1,000V AND 3A • SCHOTTKY BARRIER DIODES AVAILABLE UP TO 60V AND 3A • SURGE OVERLOAD RATING EITHER 30A, 50A OR 100A • RELIABLE LOW COST CONSTRUCTION WITH UL 94V-0 PLASTIC MATERIAL


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT651 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data •             BVCEO > 60V IC = 3A High Continuous Current ICM = 6A Peak Pulse Current Low Saturation Voltage VCE sat < 300mV @ 1A


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    PDF FZT651 OT223 300mV FZT751 AEC-Q101 J-STD-020 DS33149

    SD833-09

    Abstract: SD833
    Text: SD833-09 3A (90V / 3A ) Schottky barrier diode 0.8 Outline drawings, mm Characteristics SD833-09 Units Condition 3 4.0 BD 0.8 Tj=125°C, typ A 0.2 1.2 IO V V max. 90 0.66 VRRM VF 5.0 Major characteristics 1.5 2.5 Features Low VF High voltage 60V Low height : 1.2mm max.


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    PDF SD833-09 SD833-09 SD833