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    600V CURRENT SENSING N-CHANNEL IGBT Search Results

    600V CURRENT SENSING N-CHANNEL IGBT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    600V CURRENT SENSING N-CHANNEL IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12n60d1c

    Abstract: 12n60d1 600V Current Sensing N-Channel IGBT equivalent 12n60d1c ICL7667 HGTB12N60D1C 10A 600V MOS 12A, 600V Current Sensing N-Channel IGBT HGTB12N60D1C equivalent TS-001AA Package
    Text: S E M I C O N D U C T O R HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT April 1995 Features • • • • • • • Package 12A, 600V rDS ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27Ω


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    PDF HGTB12N60D1C 100ns 100oC. TS-001AA O-220) HGTB12N60D1C ICL7667 12n60d1c 12n60d1 600V Current Sensing N-Channel IGBT equivalent 12n60d1c ICL7667 10A 600V MOS 12A, 600V Current Sensing N-Channel IGBT HGTB12N60D1C equivalent TS-001AA Package

    IR2172S

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Data Sheet No. PD-60176A IR2172 LINEAR CURRENT SENSING IC Features Product Summary n n n n n n n n Floating channel up to +600V Monolithic integration Linear current feedback through shunt resistor Direct digital PWM output for easy interface


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    PDF PD-60176A IR2172 600Vmax /-300mVmax 50ppm/oC 40kHz /-300mV IR2172 IR21726S IR2172S

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    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Data Sheet No. PD-60176 IR2172 LINEAR CURRENT SENSING IC Features Product Summary n n n n n n n n Floating channel up to +600V Monolithic integration Linear current feedback through shunt resistor Direct digital PWM output for easy interface


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    PDF PD-60176 IR2172 600Vmax /-300mVmax 50ppm/oC 40kHz /-300mV IR2172 desi72 IR21726S

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Data Sheet No. PD-60176 IR2172 LINEAR CURRENT SENSING IC Features Product Summary n n n n n n n n Floating channel up to +600V Monolithic integration Linear current feedback through shunt resistor Direct digital PWM output for easy interface


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    PDF PD-60176 IR2172 600Vmax /-300mVmax 50ppm/oC 40kHz /-300mV IR2172 IR21726S

    60175a

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Data Sheet No. PD-60175A IR2171 LINEAR CURRENT SENSING IC Features Product Summary n n n n n n n Floating channel up to +600V Monolithic integration Linear current feedback through shunt resistor Direct digital PWM output for easy interface


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    PDF PD-60175A IR2171 /-300mVmax 50ppm/oC 40kHz IR2171 IR21716S 60175a

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    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Data Sheet No. PD-60175 IR2171 LINEAR CURRENT SENSING IC Features Product Summary n n n n n n n Floating channel up to +600V Monolithic integration Linear current feedback through shunt resistor Direct digital PWM output for easy interface


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    PDF PD-60175 IR2171 /-300mVmax 50ppm/oC IR2171 IR21716S

    PD-60175

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Data Sheet No. PD-60175 IR2171 LINEAR CURRENT SENSING IC Features Product Summary n n n n n n n Floating channel up to +600V Monolithic integration Linear current feedback through shunt resistor Direct digital PWM output for easy interface


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    PDF PD-60175 IR2171 /-300mVmax 50ppm/oC IR2171 IR21716S PD-60175

    MP150

    Abstract: 042D IR2128 IR2128S PD6042 b132 transistor
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.042D IR2128 CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


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    PDF IR2128 IR2128 EME6300 MP150 MP190 B-133 B-134 042D IR2128S PD6042 b132 transistor

    transistor B123

    Abstract: ir2127 an 600V Current Sensing N-Channel IGBT IR2127S IR2127 MP150 igbt, thermal design manual
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.036D IR2127 CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


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    PDF IR2127 IR2127 EME6300 MP150 MP190 B-127 B-128 transistor B123 ir2127 an 600V Current Sensing N-Channel IGBT IR2127S igbt, thermal design manual

    PD60143-N

    Abstract: IR2128 application notes IR2127 IR21271 IR2128 IR2128S
    Text: Data Sheet No. PD60143-N IR2127 S / IR2128(S) IR21271(S) CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


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    PDF PD60143-N IR2127 IR2128 IR21271 IR2127/IR2128) IR21271) IR2127/IR21271) IR2128) PD60143-N IR2128 application notes IR2128S

    IR2110 amplifier circuit diagram class D

    Abstract: 3 phase inverter ic ir2136 IR2104 APPLICATION NOTE IR2104 SCHEMATIC 10kw inverter Class d SCHEMATIC 10kw POWER SUPPLY WITH IGBTS ir2110 class d amp 3 phase AC servo drive schematic 3 phase scr firing circuit for dc servo driver IR2109 application note 3 phase bridge scr drive circuit diagram
    Text: POWER CONVERSION PROCESSOR TM ARCHITECTURE AND HVIC PRODUCTS FOR MOTOR DRIVE IR’s Motor Drive IC family supports the emerging Power Conversion Processor TM Architecture and delivers new level of ruggedness, compact size and lower EMI. Monolithic integration of high voltage circuits for gate driving with protection, soft


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    PDF 1200Vps IR2110 amplifier circuit diagram class D 3 phase inverter ic ir2136 IR2104 APPLICATION NOTE IR2104 SCHEMATIC 10kw inverter Class d SCHEMATIC 10kw POWER SUPPLY WITH IGBTS ir2110 class d amp 3 phase AC servo drive schematic 3 phase scr firing circuit for dc servo driver IR2109 application note 3 phase bridge scr drive circuit diagram

    3 phase IGBT inverter design by ir2130

    Abstract: IR2110 APPLICATION CIRCUIT FOR INVERTERS IR2104 APPLICATION NOTE variable frequency drive circuit diagram IR2113 Inverter 10kf12 3 phase inverters circuit diagram igbt 1 phase inverter using igbt 50V 5A IR2110 driver CIRCUIT FOR INVERTERS ir2113 isolation circuit diagram
    Text: NEW 1200-V INTEGRATED CIRCUIT CHANGES THE WAY 3-PHASE MOTOR DRIVE INVERTERS ARE DESIGNED David Tam, International Rectifier, El Segundo, California New 1200-V high voltage integrated circuit technology and design advances enable a whole new class of 3-phase motor drive inverters that set new benchmarks for efficiency, compactness and


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    PDF 200-V IR2233, 460VAC IRPT2051) IR2233 460Vrms, 3 phase IGBT inverter design by ir2130 IR2110 APPLICATION CIRCUIT FOR INVERTERS IR2104 APPLICATION NOTE variable frequency drive circuit diagram IR2113 Inverter 10kf12 3 phase inverters circuit diagram igbt 1 phase inverter using igbt 50V 5A IR2110 driver CIRCUIT FOR INVERTERS ir2113 isolation circuit diagram

    dc motor speed pi control using pwm and opamp

    Abstract: single phase asynchronous ac motor speed control difference between arm7 and arm9 3 phase ac sinewave motor controller single ic single phase ac motor speed control using pwm microcontroller phase controller trigger ic L6388 ARM7 MICROCONTROLLER induction motor speed control STR75x dc to ac sinewave converter use IGBT
    Text: STR75x for Motor Control applications Features and Benefits Vincent Onde Application Lab MCU Division Plan PWM generation Speed / position feedback Multi timer configuration Analog to Digital converter Current sensing and ADC synchronization CPU Performance


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    PDF STR75x 16-bit L639x) SO/DIP14 L6386 L6388 dc motor speed pi control using pwm and opamp single phase asynchronous ac motor speed control difference between arm7 and arm9 3 phase ac sinewave motor controller single ic single phase ac motor speed control using pwm microcontroller phase controller trigger ic L6388 ARM7 MICROCONTROLLER induction motor speed control dc to ac sinewave converter use IGBT

    JESD22A111

    Abstract: FAN7384M FR4 epoxy pcb csc 1300 3 FAN7384 FAN7384MX JESD51-2 JESD51-3
    Text: FAN7384 Half-Bridge Gate-Drive IC Features Description „ Floating Channel for Bootstrap Operation to +600V The FAN7384 is a monolithic half-bridge gate-drive IC designed for high voltage, high speed driving MOSFETs and IGBTs operating up to +600V. „ Typically 250mA/500mA Sourcing/Sinking Current


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    PDF FAN7384 250mA/500mA FAN7384 JESD22A111 FAN7384M FR4 epoxy pcb csc 1300 3 FAN7384MX JESD51-2 JESD51-3

    Untitled

    Abstract: No abstract text available
    Text: bflE J> HARRIS SEMICOND SECTOR • 43G2E71 0DSD2Sn ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT Decem ber 1993 Features Package • 12 A ,600V • JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW r D S (O N ) .0.27V


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    PDF 43G2E71 HGTB12N60D1C TS-001AA O-220) 100ns 60jia ICL7667

    12n60d1

    Abstract: 12n60d1c 600V Current Sensing N-Channel IGBT equivalent 12n60d1c HGTB12N60D1C 12n60d
    Text: HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT Package Features • 12A, 600V JE D E C T S -001A A 5 LEAD TO -220 • r • Low VCe(SAT) at 25 A . 2.5V (Typ)


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    PDF HGTB12N60D1C 100ns -001A HGTB12N60D1C 12n60d1 12n60d1c 600V Current Sensing N-Channel IGBT equivalent 12n60d1c 12n60d

    12n60d1c

    Abstract: 12n60d1 equivalent 12n60d1c HGTB12N60D1C equivalent HGTB12N60D1C D05QSS3 BT 33C 12N60 Harris Semiconductor to220 power transistor equivalent+12n60d1c
    Text: HARRIS SEMICOND SECTOR fflhfAfS « böE D • M302E71 0QSD25D 2Sb ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12 A ,600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r DS(O N) . 0.27V


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    PDF M302271 0QSD25D HGTB12N60D1C 100ns HGTB12N60D1C M3D2B71 D05QSS3 12N60D1C 12n60d1c 12n60d1 equivalent 12n60d1c HGTB12N60D1C equivalent BT 33C 12N60 Harris Semiconductor to220 power transistor equivalent+12n60d1c

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
    Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .


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    PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT

    ir840

    Abstract: IR8200B IR2110 PWM IR2129 h bridge ir2110 IR2119 IR2130 APPLICATIONS NOTES single phase IR2130 IR2130 APPLICATIONS 3 phase dc control ir2130
    Text: International S R e c tifie r Power Integrated Circuits High Voltage MOS Gate Driver FEATURES • Drives a pair of H E X FE Ts or IGBTs • Tw o Independent Channel Drivers — O ne Floating High Side Driver — O ne Ground R eferenced Low S ide Driver • O perates to 500V


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    PDF IR2110 IR2110/IR2121/IR2125/IR2130) IR2110/IR2121 /IR2125/IR2130 IR8200B IR8400P ir840 IR2110 PWM IR2129 h bridge ir2110 IR2119 IR2130 APPLICATIONS NOTES single phase IR2130 IR2130 APPLICATIONS 3 phase dc control ir2130

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER bSE D • 4ÔSSMS2 D O l ß n a GT7 ■ INR Preliminary Data Sheet No. PD-6.019 IN T E R N A T IO N A L R E C T IF IE R HIGH VOLTAGE T H R EE-P H A SE M O S GATE D R IV E R General Description Features The IR2130 is a high voltage driver for MOS-gated power


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    PDF IR2130 11DF4 IR2130

    Untitled

    Abstract: No abstract text available
    Text: International IQR Rectifier DalaShsetN0PD‘6042D IR2 1 2 8 CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


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    PDF IR2128 EME6300 MP150 MP190 IR2128

    Untitled

    Abstract: No abstract text available
    Text: International I R Rectifier Data Sheet No. PD-6.036D IR2127 CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V


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    PDF IR2127 0-20V IR2127 EME6300 MP150 MP190

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-6.130-G International IO R Rectifier IR2122 CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V


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    PDF 130-G IR2122 IR2122 MS-012AA.

    600V IGBT Current Sensing Channel Driver

    Abstract: No abstract text available
    Text: Data Sheet No. PD-6.130-G International Iö R Rectifier IR2122 CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V


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    PDF 130-G IR2122 IR2122 600V IGBT Current Sensing Channel Driver