Untitled
Abstract: No abstract text available
Text: R6004ENJ Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source
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R6004ENJ
SC-83)
R1102A
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zener diode 4.7 v
Abstract: No abstract text available
Text: STP4NM60 N-CHANNEL 600V - 1.4Ω - 4A TO-220 Zener-Protected MDmesh Power MOSFET TARGET DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STP4NM60 600V < 1.6 Ω 4A TYPICAL RDS(on) = 1.4 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY
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O-220
STP4NM60
O-220
zener diode 4.7 v
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Untitled
Abstract: No abstract text available
Text: R6004END Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 20W (2) CPT3 (SC-63) <SOT-428> (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source
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R6004END
SC-63)
OT-428>
R6004E
R1102A
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Untitled
Abstract: No abstract text available
Text: R6004END Nch 600V 4A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 20W (2) CPT3 (SC-63) <SOT-428> (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source
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R6004END
SC-63)
OT-428>
R6004E
R1102A
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Untitled
Abstract: No abstract text available
Text: R6004ENJ Nch 600V 4A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source
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R6004ENJ
SC-83)
R1102A
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Untitled
Abstract: No abstract text available
Text: R6004ENX Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 980mW ID 4A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6004ENX
980mW
O-220FM
R1102A
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STL4NM60
Abstract: No abstract text available
Text: STL4NM60 N-CHANNEL 600V - 1.5Ω - 4A PowerFLAT MDmesh Power MOSFET PROPOSAL DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STL4NM60 600V < 1.8Ω 4A TYPICAL RDS(on) = 1.5Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
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STL4NM60
STL4NM60
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Untitled
Abstract: No abstract text available
Text: R6004ENX Nch 600V 4A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 980mW ID 4A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6004ENX
980mW
O-220FM
R1102A
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P4N60
Abstract: F4N60
Text: PJP4N60 / PJF4N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 4A , 600V, RDS ON =2.4Ω@VGS=10V, ID=2.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP4N60
PJF4N60
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
P4N60
F4N60
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FAN7171
Abstract: SOIC127P600X175-8M FAN7171M FAN7371 JESD51-2 Q100 fan71 fan7371 application
Text: FAN7171_F085 High-Current High-Side Gate Drive IC Features Floating Channel for Bootstrap Operation to +600V 4A/4A Sourcing/Sinking Current Driving Capability Common-Mode dv/dt Noise Canceling Circuit 3.3V and 5V Input Logic Compatible Output In-phase with Input Signal
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FAN7171
SOIC127P600X175-8M
FAN7171M
FAN7371
JESD51-2
Q100
fan71
fan7371 application
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fan7371 application
Abstract: FAN7171MX_F085 fan7371
Text: FAN7171_F085 High-Current High-Side Gate Drive IC Features Automotive qualified to AEC Q100 Floating Channel for Bootstrap Operation to +600V 4A Sourcing and 4A Sinking Current Driving Capability Common-Mode dv/dt Noise Cancelling Circuit 3.3V and 5V Input Logic Compatible
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FAN7171
fan7371 application
FAN7171MX_F085
fan7371
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET IXTA7N60PM IXTP7N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600V = 4A Ω ≤ 1.1Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol
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IXTA7N60PM
IXTP7N60PM
O-220
7N60P
06-17-08-D
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R460p2
Abstract: ISL9R460S2 ISL9R460S3S ISL9R460S3ST TA49408 TB334 ISL9R460P2
Text: ISL9R460P2, ISL9R460S2, ISL9R460S3S 4A, 600V Stealth Diode General Description Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 3 The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are Stealth™ diodes optimized for low loss performance in
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ISL9R460P2,
ISL9R460S2,
ISL9R460S3S
ISL9R460S2
ISL9R460S3S
175oC
R460p2
ISL9R460S3ST
TA49408
TB334
ISL9R460P2
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Untitled
Abstract: No abstract text available
Text: ISL9R460P2, ISL9R460S2, ISL9R460S3S 4A, 600V Stealth Diode General Description Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 3 The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are Stealth™ diodes optimized for low loss performance in
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ISL9R460P2,
ISL9R460S2,
ISL9R460S3S
ISL9R460S2
ISL9R460S3S
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R460P
Abstract: No abstract text available
Text: ISL9R460P2, ISL9R460S2, ISL9R460S3S 4A, 600V Stealth Diode General Description Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . t b / ta > 3 The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are Stealth™ diodes optimized for low loss performance in
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ISL9R460P2,
ISL9R460S2,
ISL9R460S3S
ISL9R460S2
ISL9R460S3S
R460P
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AOTF4N60
Abstract: AOT4N60
Text: AOT4N60/AOTF4N60 600V, 4A N-Channel MOSFET General Description Features The AOT4N60 & AOTF4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT4N60/AOTF4N60
AOT4N60
AOTF4N60
O-220
O-220F
AOTF4N60
AOT4N60
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BLV4N60
Abstract: mosfet 600V N-CHANNEL
Text: BLV4N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 2.2Ω Ω • Simple Drive Requirements ID 4A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
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BLV4N60
BLV4N60
mosfet 600V N-CHANNEL
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BLV4N60
Abstract: No abstract text available
Text: BLV4N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 2.2Ω Ω • Simple Drive Requirements ID 4A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
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BLV4N60
BLV4N60
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Untitled
Abstract: No abstract text available
Text: AOT4N60/AOTF4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOT4N60 & AOTF4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT4N60/AOTF4N60
AOT4N60
AOTF4N60
AOT4N60L
AOTF4N60L
O-220
O-220F
AOTF4N60
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information Polar3 TM HiPerFETTM Power MOSFETs VDSS ID25 IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 4A Ω ≤ 2.2Ω TO-252 (IXFY) G S Symbol Test Conditions D (Tab)
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IXFY4N60P3
IXFA4N60P3
IXFP4N60P3
O-252
O-263
IXFY4N60P3
4N60P3
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Untitled
Abstract: No abstract text available
Text: AOT4N60/AOTF4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOT4N60 & AOTF4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT4N60/AOTF4N60
AOT4N60
AOTF4N60
AOT4N60L
AOTF4N60L
O-220
O-220F
AOTF4N60
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AOTF4N60L
Abstract: AOT4N60
Text: AOT4N60/AOTF4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOT4N60 & AOTF4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT4N60/AOTF4N60
AOT4N60
AOTF4N60
AOT4N60L
AOTF4N60L
O-220
O-220F
AOT4N60
AOTF4N60L
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Untitled
Abstract: No abstract text available
Text: AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC
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AOD4N60/AOI4N60/AOU4N60
AOD4N60
AOI4N60
AOU4N60
O251A
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mosfet 337
Abstract: Vdss 2000V
Text: MITSUBISHI Neh POWER MOSFET FS4KM-12 HIGH-SPEED SWITCHING USE FS4KM-12 • VDSS . 600V • TDS ON (MAX) . 2.6SÌ • ID . 4A
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FS4KM-12
mosfet 337
Vdss 2000V
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