STTA206S
Abstract: SMC 4A 400v diode 400v 2A ultrafast DIODE 2A 400V TRANSISTOR 45 P3
Text: STTA206S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY
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STTA206S
STTA206S
SMC 4A 400v
diode 400v 2A ultrafast
DIODE 2A 400V
TRANSISTOR 45 P3
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Untitled
Abstract: No abstract text available
Text: STTA206S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2A V rrm 600V trr (typ) V f (max) 20ns 1.5V FEATURES AND BENEFITS • SPECIFIC TO "FREEWHEEL MODE' OPERATION: FREEWHEEL OR BOOSTER DIODE ■ ULTRA-FAST AND SOFT RECOVERY
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STTA206S
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STTA206S
Abstract: diode 400v 2A ultrafast SMC 4A 400v
Text: STTA206S TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTERDIODE ULTRA-FAST AND SOFT RECOVERY
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STTA206S
STTA206S
diode 400v 2A ultrafast
SMC 4A 400v
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mosfet 600v
Abstract: STTA206S DU MARKING
Text: STTA206S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS c u d SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY
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STTA206S
mosfet 600v
STTA206S
DU MARKING
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STTA206S
Abstract: diode 400v 2A ultrafast
Text: STTA206S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATION: FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN
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STTA206S
STTA206S
diode 400v 2A ultrafast
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E2 diode
Abstract: Diode B2x
Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1
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QCA30B/QCB30A40/60
E76102
QCA30B
QCB30A
110TAB
94max
32max
31max
35max
400/600V
E2 diode
Diode B2x
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smps with uc3842 and tl431
Abstract: mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output
Text: POWER SUPPLY EQUIPMENT STMicroelectronics SOLUTIONS Power Converter Block Diagram Mains Mains Rectification Conditioning Mains Rectification / Inrush Current Limitation Mains Conditioning Primary Secondary Primary Secondary RECOMMENDED DEVICES MAIN FEATURES
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BF3510TV
/BF3506TV
BHA/K3012TV
BTAxx600CW
AVS08
L6560/A
L6561
L4981A/B
ST90T40
/W/P/HxxNB50/60/80
smps with uc3842 and tl431
mc34063 step down with mosfet
mc34063 step up with mosfet
MC34063 MOSFET
UC3842 step up converter
mc34063 step down 5a
mc34063 step up 5a
MOSFET 1000v 30a
uc3842 step down
mc34063 triple output
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srps
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYR79-600 DIODE ULTRA FAST-RECOVERY RECTIFIER DIODE DESCRIPTION The UTC BYR79-600 is a rectifier diode providing the designers with ultra-fast switching and low switching loss. It features low forward voltage drop, ultra fast reverse recovery times with very low
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BYR79-600
BYR79-600
BYR79L-600-ues
QW-R601-028
srps
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BYR79 DIODE Preliminary ULTRA FAST-RECOVERY RECTIFIER DIODE DESCRIPTION The UTC BYR79 is a rectifier diode providing the designers with ultra-fast switching and low switching loss. It features low forward voltage drop, ultra fast reverse recovery times with very low stored
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BYR79
BYR79
BYR79L-6-TA2-T
BYR79G-6-TA2-T
QW-R601-028
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYR79-600 DIODE ULTRA FAST-RECOVERY RECTIFIER DIODE DESCRIPTION The UTC BYR79-600 is a rectifier diode providing the designers with ultra-fast switching and low switching loss. It features low forward voltage drop, ultra fast reverse recovery times with very low
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BYR79-600
BYR79-600
BYR79L-600-TA2
BYR79G-600-TA2
O-220-2
QW-R601-028
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40rl50
Abstract: 5JUZ47 a30 DIODE DIODE A30
Text: SILICON EPITAXIAL TYPE SUPER FAST RECOVERY DIODE 0 J J J 2 4 7 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION. 1 0.3 MAX CONVERTER & CHOPPER APPLICATION. . 03.2 ±0-2 W: • Repetitive Peak Reverse Voltage : V^gjj=600V • Average Output Rectified Current : To=5A
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100ns
40rl50
5JUZ47
a30 DIODE
DIODE A30
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BYR79-600 Preliminary DIODE U LT RA FAST -RECOV ERY RECT I FI ER DI ODE ̈ DESCRI PT I ON The UTC BYR79-600 is a rectifier diode providing the designers with ultra-fast switching and low switching loss. It features low forward voltage drop, ultra fast reverse recovery times with very low
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BYR79-600
BYR79-600
QW-R601-028
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toshiba diode 1A
Abstract: MARK diode general semiconductor toshiba marking code diode 5JUZ47
Text: 5JUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE 5JUZ47 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Forward Current : IF AV = 5A Ultra Fast Reverse-Recovery Time
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5JUZ47
100ns
toshiba diode 1A
MARK diode general semiconductor
toshiba marking code diode
5JUZ47
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Untitled
Abstract: No abstract text available
Text: 5JUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE 5JUZ47 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 600V l Average Forward Current : IF AV = 5A l Ultra Fast Reverse-Recovery Time
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5JUZ47
100ns
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10C2
Abstract: 5JUZ47
Text: TOSHIBA 5JUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE 5JUZ47 Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 43.2 ±0.2 10.3MAX. V r r m = 600V • Repetitive Peak Reverse Voltage • Average Output Rectified Current I0 = 5A
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5JUZ47
100ns
961001EAA2'
10C2
5JUZ47
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fast recovery diode 2a trr 200ns
Abstract: vvvf motor QCA100BA60 600v 2A ultra fast recovery diode dc motor control 100A Darlington 300v
Text: TRANSISTOR MODULE Hi- QCA100BA60 UL;E76102 M QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is
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QCA100BA60
E76102
QCA100BA60
200ns)
130mA
fast recovery diode 2a trr 200ns
vvvf motor
600v 2A ultra fast recovery diode
dc motor control 100A
Darlington 300v
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Untitled
Abstract: No abstract text available
Text: 10JL2CZ47 SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION. 10.3 MAX CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage 03.2±O.2 : V^juf=600V . Average Output Rectified Current : Io=10A
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10JL2CZ47
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FREDFET
Abstract: No abstract text available
Text: APT4F120S 1200V, 4A, 4.2Ω Max Trr ≤195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT4F120S
195nS
FREDFET
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CTL22S
Abstract: CTB34 ctb-34 CTU-G3DR CTU1S CTUG3DR
Text: SANKEN ELECTRIC U S A 11E D I ? ? 4 1 IVrm : 100— 200V Ultra Fast Recovery Diodes 00001*43 2 I H lo : 5 — 20 A CTL | V rm V lo (A) Tstg CC) Tj CC) Ifsm (A) With 60HzHaNSineWave 100 100 200 200 100 100 200 200 100 100 200 200 Ir (mA) Vf (V) trr Irm
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CTL-11S
CTL-12S
CTL-21S
CTL-22S
CTL-31S
CTL-32S
CTB-33
CTB-34.
MI-10/15
SFPB-64
CTL22S
CTB34
ctb-34
CTU-G3DR
CTU1S
CTUG3DR
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Untitled
Abstract: No abstract text available
Text: APT4F120S 1200V, 4A, 4.2Ω Max Trr ≤195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT4F120S
195nS
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10JL2CZ47A
Abstract: No abstract text available
Text: 10JL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 10A
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10JL2CZ47A
10JL2CZ47A
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Untitled
Abstract: No abstract text available
Text: 10JL2CZ47 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 600V l Average Output Rectified Current : IO = 10A
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10JL2CZ47
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Untitled
Abstract: No abstract text available
Text: 10JL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 600V l Average Output Rectified Current : IO = 10A
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10JL2CZ47A
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20JL2C
Abstract: 600v 2A ultra fast recovery diode U20JL2C48A 10D2A
Text: U20JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage Unit: mm : VRRM = 600V Average Output Rectified Current : IO = 20A
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U20JL2C48A
20JL2C
600v 2A ultra fast recovery diode
U20JL2C48A
10D2A
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