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    600V 2A Search Results

    600V 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
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    600V 2A Price and Stock

    Fluke Corporation FUSE-2A/600V

    Fuse Kits & Assortments Fuse, Fast 2A 600V Lot Qty 25
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FUSE-2A/600V 1
    • 1 $670.53
    • 10 $670.53
    • 100 $670.53
    • 1000 $670.53
    • 10000 $670.53
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    Carlo Gavazzi Holding AG GCA32A600VAC60HZ

    Industrial Relays COIL CC32-40A 600VAC60HZ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GCA32A600VAC60HZ
    • 1 $31.35
    • 10 $26.4
    • 100 $24.42
    • 1000 $24.09
    • 10000 $24.09
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    Power Integrations 2SP0115T2A0C-2MBI600VN-120-50

    Gate Drivers Plug-and-Play Gate Driver, SCALE-2, conformal coating
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2SP0115T2A0C-2MBI600VN-120-50
    • 1 -
    • 10 -
    • 100 $122.79
    • 1000 $122.79
    • 10000 $122.79
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    APEM Inc ATA600VTR

    Tactile Switches Tact Switch 1/2 Pitch DIP Switch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ATA600VTR
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.925
    • 10000 $0.877
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    APEM Inc ATAS600VTR

    Tactile Switches TACT SWITCH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ATAS600VTR
    • 1 -
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    • 1000 $0.939
    • 10000 $0.775
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    Find more 600V 2A price and stock on Findchips.com

    600V 2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CEF02N6

    Abstract: transistor cep02n6 CEP02N6 CEB02N6 CEI02N6
    Text: CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6 600V 5Ω 2A 10V CEB02N6 600V 5Ω 2A 10V CEI02N6 600V 5Ω 2A 10V CEF02N6 600V 5Ω 2A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP02N6/CEB02N6 CEI02N6/CEF02N6 CEP02N6 CEB02N6 CEI02N6 CEF02N6 O-220 O-263 O-262 O-220F CEF02N6 transistor cep02n6 CEP02N6 CEB02N6 CEI02N6

    CEP02N6

    Abstract: CEF02N6 transistor cep02n6 CEB02N6 CEI02N6
    Text: CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6 600V 5Ω 2A 10V CEB02N6 600V 5Ω 2A 10V CEI02N6 600V 5Ω 2A 10V CEF02N6 600V 5Ω 2A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP02N6/CEB02N6 CEI02N6/CEF02N6 CEP02N6 CEB02N6 CEI02N6 CEF02N6 O-220 O-263 O-262 O-220F CEP02N6 CEF02N6 transistor cep02n6 CEB02N6 CEI02N6

    F2HNK60Z

    Abstract: D2HNK60Z RG 2006 10A 600V D2hnk of D2HNK60Z f2hnk60 ISD20A datasheet of D2HNK60Z d2hnk60 STD2HNK60Z-1
    Text: STD2HNK60Z - STD2HNK60Z-1 STF2HNK60Z - STQ2HNK60ZR-AP N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID PTOT STD2HNK60Z 600V <4.8Ω 2A 45W STD2HNK60Z-1 600V <4.8Ω 2A 45W


    Original     		PDF STD2HNK60Z STD2HNK60Z-1 STF2HNK60Z STQ2HNK60ZR-AP O-92/TO-220FP/DPAK/IPAK STD2HNK60Z STF2HNK60Z O-220 F2HNK60Z D2HNK60Z RG 2006 10A 600V D2hnk of D2HNK60Z f2hnk60 ISD20A datasheet of D2HNK60Z d2hnk60 STD2HNK60Z-1

    zener 600v

    Abstract: STD2NM60 STD2NM60-1
    Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS on ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED


    Original     		PDF STD2NM60 STD2NM60-1 zener 600v STD2NM60 STD2NM60-1

    CEF02N6G

    Abstract: CEB02N6G
    Text: CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6G 600V 5.5Ω 2A 10V CEB02N6G 600V 5.5Ω 2A 10V CEF02N6G 600V 5.5Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP02N6G/CEB02N6G CEF02N6G CEP02N6G CEB02N6G O-263 O-220 O-220F O-220/263 100ms CEF02N6G CEB02N6G

    4NC60

    Abstract: STB4NC60-1 STP4NC60 STP4NC60FP
    Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		PDF STP4NC60 STP4NC60FP STB4NC60-1 O-220/TO-220FP/I2PAK STP4NC60 O-220 O-220FP O-220) 4NC60 STB4NC60-1 STP4NC60FP

    STB4NC60A-1

    Abstract: STP4NC60A STP4NC60AFP
    Text: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		PDF STP4NC60A STP4NC60AFP STB4NC60A-1 O-220/TO-220FP/I2PAK STP4NC60A O-220 O-220FP O-220) STB4NC60A-1 STP4NC60AFP

    4NC60

    Abstract: STB4NC60A-1 STP4NC60A STP4NC60AFP
    Text: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP4NC60A STP4NC60AFP STB4NC60A-1 O-220/TO-220FP/I2PAK STP4NC60A O-220 4NC60 STB4NC60A-1 STP4NC60AFP

    4nC60

    Abstract: STP4NC60FP STB4NC60-1 STP4NC60
    Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		PDF STP4NC60 STP4NC60FP STB4NC60-1 O-220/TO-220FP/I2PAK STP4NC60 O-220 4nC60 STP4NC60FP STB4NC60-1

    STD2NM60

    Abstract: STD2NM60-1
    Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


    Original     		PDF STD2NM60 STD2NM60-1 STD2NM60 STD2NM60-1

    Untitled

    Abstract: No abstract text available
    Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		PDF STP4NC60 STP4NC60FP STB4NC60-1 O-220/TO-220FP/I2PAK STP4NC60 O-220 O-220FP

    4NC60

    Abstract: STP4NC60A STB4NC60A-1 STP4NC60AFP
    Text: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		PDF STP4NC60A STP4NC60AFP STB4NC60A-1 O-220/TO-220FP/I2PAK STP4NC60A O-220 O-220FP O-220) 4NC60 STB4NC60A-1 STP4NC60AFP

    4nc60

    Abstract: STP4NC60FP B4NC60 STB4NC60-1 STP4NC60
    Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		PDF STP4NC60 STP4NC60FP STB4NC60-1 O-220/TO-220FP/I2PAK STP4NC60 O-220 O-220FP O-220) 4nc60 STP4NC60FP B4NC60 STB4NC60-1

    Untitled

    Abstract: No abstract text available
    Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD2NM60 STD2NM60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


    Original     		PDF STD2NM60 STD2NM60-1

    Untitled

    Abstract: No abstract text available
    Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE V DSS R DS on ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


    Original     		PDF STD2NM60 STD2NM60-1 O-252 O-251

    Untitled

    Abstract: No abstract text available
    Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE V DSS R DS on ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


    Original     		PDF STD2NM60 STD2NM60-1 O-252 O-251

    CEF09N6

    Abstract: CEP09N6 CEB09N6
    Text: CEP09N6/CEB09N6 CEI09N6/CEF09N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP09N6 600V 1.2Ω 9A 10V CEB09N6 600V 1.2Ω 9A 10V CEI09N6 600V 1.2Ω 9A 10V CEF09N6 600V 1.2Ω 9A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP09N6/CEB09N6 CEI09N6/CEF09N6 CEP09N6 CEB09N6 CEI09N6 CEF09N6 O-220 O-263 O-262 O-220F CEF09N6 CEP09N6 CEB09N6

    CEF04N6

    Abstract: CEP04N6 CEF04N6 equivalent CEB04N6 CEI04N6 SWITCHING DIODE 600V 2A
    Text: CEP04N6/CEB04N6 CEI04N6/CEF04N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP04N6 600V 2.5Ω 4A 10V CEB04N6 600V 2.5Ω 4A 10V CEI04N6 600V 2.5Ω 4A CEF04N6 600V 2.5Ω 4A 10V e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP04N6/CEB04N6 CEI04N6/CEF04N6 CEP04N6 CEB04N6 CEI04N6 CEF04N6 O-220 O-263 O-262 O-220F CEF04N6 CEP04N6 CEF04N6 equivalent CEB04N6 CEI04N6 SWITCHING DIODE 600V 2A

    CEF04N6

    Abstract: CEF04N6 equivalent CEP04N6 cef04n6 TRANSISTOR equivalent CEB04N6 CEI04N6
    Text: CEP04N6/CEB04N6 CEI04N6/CEF04N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP04N6 600V 2.5Ω 4A 10V CEB04N6 600V 2.5Ω 4A 10V CEI04N6 600V 2.5Ω 4A CEF04N6 600V 2.5Ω 4A 10V e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP04N6/CEB04N6 CEI04N6/CEF04N6 CEP04N6 CEB04N6 CEI04N6 CEF04N6 O-220 O-263 O-262 O-220F CEF04N6 CEF04N6 equivalent CEP04N6 cef04n6 TRANSISTOR equivalent CEB04N6 CEI04N6

    not gate

    Abstract: SCR TRIGGER PULSE NTE5586
    Text: NTE5586 Silicon Controlled Rectifier SCR 600V, 360 Amps, TO93 Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM & VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V


    Original     		PDF NTE5586 not gate SCR TRIGGER PULSE NTE5586

    Mosfet

    Abstract: SSF2N60F mosfet 600V 100A
    Text: SSF2N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2N60F O220F p600V Mosfet SSF2N60F mosfet 600V 100A

    STD3NC60

    Abstract: STD3NC60-1
    Text: STD3NC60 STD3NC60-1 N-CHANNEL 600V - 1.8Ω - 3.2A DPAK / IPAK PowerMesh II MOSFET TYPE STD3NC60 STD3NC60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 600V 600V < 2.2Ω < 2.2Ω 3.2A 3.2A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STD3NC60 STD3NC60-1 STD3NC60 STD3NC60-1

    Untitled

    Abstract: No abstract text available
    Text: STP4NC60A STP4NC60AFP N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP PowerMesh II MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP4NC60A 600V < 2Ω 4.2A STP4NC60AFP 600V < 2Ω 4.2A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF O-220/TO-220FP STP4NC60A STP4NC60AFP O-220

    4nc60

    Abstract: B4NC60 STP4NC60FP
    Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP4NC60 600V < 2.2Ω 4.2A STP4NC60FP 600V < 2.2Ω 4.2A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP4NC60 STP4NC60FP STB4NC60-1 O-220/TO-220FP/I2PAK STP4NC60 O-220 O-220FP O-220) 4nc60 B4NC60 STP4NC60FP