Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    600V 25A ULTRAFAST DIODE APT Search Results

    600V 25A ULTRAFAST DIODE APT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    600V 25A ULTRAFAST DIODE APT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET 25A 600V

    Abstract: APT25GP120BDF1 T0-247 IC-125A mosfet 1200V 25A
    Text: APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power


    Original     		PDF APT25GP120BDF1 O-247 MOSFET 25A 600V APT25GP120BDF1 T0-247 IC-125A mosfet 1200V 25A

    Untitled

    Abstract: No abstract text available
    Text: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90BDF1 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90BDF1 O-247

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT25GP120BDF1 APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power


    Original     		PDF APT25GP120BDF1 O-247

    APT25GP90BDF1

    Abstract: T0-247 T0247 package NF 833
    Text: APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90BDF1 O-247 APT25GP90BDF1 T0-247 T0247 package NF 833

    APT25GP90BDF1

    Abstract: No abstract text available
    Text: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90BDF1 O-247 APT25GP90BDF1

    Untitled

    Abstract: No abstract text available
    Text: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90BDF1 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT25GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT25GP120BDQ1 APT25GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT25GP120BDQ1 APT25GP120BDQ1 APT25GP120BDQ1G*

    APT25GP120BDQ1

    Abstract: APT25GP120BDQ1G 600V 25A Ultrafast Diode 600V 25A Ultrafast Diode APT APT10078BLL
    Text: APT25GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT25GP120BDQ1 APT25GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT25GP120BDQ1 APT25GP120BDQ1 APT25GP120BDQ1G* APT25GP120BDQ1G 600V 25A Ultrafast Diode 600V 25A Ultrafast Diode APT APT10078BLL

    Untitled

    Abstract: No abstract text available
    Text: APT25GP90BDQ1 G 900V TYPICAL PERFORMANCE CURVES APT25GP90BDQ1 APT25GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT25GP90BDQ1 APT25GP90BDQ1 APT25GP90BDQ1G*

    IC 7476

    Abstract: 7476 IC datasheet IC 7476 datasheet datasheet IC 7476 APT25GP90BDQ1G 7476 data sheet 7476 datasheet APT25GP90BDQ1
    Text: APT25GP90BDQ1 G 900V TYPICAL PERFORMANCE CURVES APT25GP90BDQ1 APT25GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT25GP90BDQ1 APT25GP90BDQ1 APT25GP90BDQ1G* Volta10) IC 7476 7476 IC datasheet IC 7476 datasheet datasheet IC 7476 APT25GP90BDQ1G 7476 data sheet 7476 datasheet

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT50GT60BRDL G 600V APT50GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT50GT60BRDL O-247

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT50GT60BRDL G 600V APT50GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT50GT60BRDL O-247

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT50GT60BRDL G 600V APT50GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT50GT60BRDL

    APT50GP60JDF2

    Abstract: APT50G
    Text: APT50GP60JDF2 600V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT50GP60JDF2 APT50GP60JDF2 APT50G

    APT10078BLL

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT25GT120BRDL G 1200V APT25GT120BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT TO -2 47 The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior


    Original     		PDF APT25GT120BRDL APT10078BLL

    D-6020

    Abstract: APT25GP90B T0-247
    Text: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90B O-247 D-6020 APT25GP90B T0-247

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90B O-247

    Untitled

    Abstract: No abstract text available
    Text: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90B O-247

    Untitled

    Abstract: No abstract text available
    Text: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90B O-247

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT50GP60LDL G APT50GP60LDL(G) 600V, 50A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high


    Original     		PDF APT50GP60LDL O-264

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT50GP60LDL G APT50GP60LDL(G) 600V, 50A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high


    Original     		PDF APT50GP60LDL O-264

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT50GP60LDL G APT50GP60LDL(G) 600V, 50A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high


    Original     		PDF APT50GP60LDL

    APT25GP120B

    Abstract: IC 7411 T0-247
    Text: APT25GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,


    Original     		PDF APT25GP120B O-247 APT25GP120B IC 7411 T0-247