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    600V 20A POWER ELECTRONIC Search Results

    600V 20A POWER ELECTRONIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    600V 20A POWER ELECTRONIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: R6020ENJ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source


    Original     		PDF R6020ENJ SC-83) R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6020FNX Data Sheet Nch 600V 20A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.


    Original     		PDF R6020FNX O-220FM R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6020FNX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.


    Original     		PDF R6020FNX O-220FM R1102A

    mosfet 600V 20A

    Abstract: L084 to220sis equivalent toshiba mosfet TK12J60U TK15A60U mosfet 12A 600V tk12d60u TK20A60U toshiba cmos memory camera
    Text: TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION. Page 1 of 3 TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION STRUCTURE TO INCREASE POWER EFFICIENCY 12A, 15A, or 20A 600V MOSFETs in Second DTMOS Generation Utilize "Superjunction" Technology to Reduce


    Original     		PDF releases/2008/power mosfet 600V 20A L084 to220sis equivalent toshiba mosfet TK12J60U TK15A60U mosfet 12A 600V tk12d60u TK20A60U toshiba cmos memory camera

    R6020ENX

    Abstract: No abstract text available
    Text: R6020ENX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF R6020ENX O-220FM R1102A R6020ENX

    Untitled

    Abstract: No abstract text available
    Text: R6020ENJ Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source


    Original     		PDF R6020ENJ SC-83) R1102A

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP20GT60I-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching VCES 600V IC 20A Low Saturation Voltage Typical V CE sat = 1.8V at IC=20A Isolated tab Industry-standard isolated package G RoHS-compliant, halogen-free


    Original     		PDF AP20GT60I-HF-3 O-220CFM 100oC AP20GT60AS 20GT60I

    Untitled

    Abstract: No abstract text available
    Text: R6020ENX Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V.


    Original     		PDF R6020ENX O-220FM R1102A

    R6020ENZ

    Abstract: No abstract text available
    Text: R6020ENZ1 Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6020ENZ1 O-247 R1102A R6020ENZ

    R6020-ANX

    Abstract: No abstract text available
    Text: R6020ANX Datasheet Nch 600V 20A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		PDF R6020ANX O-220FM R1120A R6020-ANX

    Untitled

    Abstract: No abstract text available
    Text: R6020ENZ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6020ENZ R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6020ANX Nch 600V 20A Power MOSFET Datasheet Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		PDF R6020ANX O-220FM R1120A

    Untitled

    Abstract: No abstract text available
    Text: R6020ENZ Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6020ENZ R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6020ENZ1 Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6020ENZ1 O-247 R1102A

    20GT60P

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP20GT60P-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching VCES 600V IC 20A Low Saturation Voltage Typical V CE sat = 1.8V at IC=20A C (tab) G Industry-standard TO-220 package C C RoHS-compliant, halogen-free


    Original     		PDF AP20GT60P-HF-3 O-220 O-220 AP20GT60 20GT60P 20GT60P

    ictc

    Abstract: No abstract text available
    Text: AP20GT60I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,typ.=1.8V@IC=20A ▼ RoHS Compliant Product G C E VCES 600V IC 20A TO-220CFM(I)


    Original     		PDF AP20GT60I O-220CFM 100oC ictc

    Untitled

    Abstract: No abstract text available
    Text: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C


    Original     		PDF AP20GT60SW

    Untitled

    Abstract: No abstract text available
    Text: AP20GT60W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C High Speed Switching Low Saturation Voltage VCE sat ,typ.=1.8V@IC=20A RoHS Compliant Product VCES 600V IC 20A C G C E E Absolute Maximum Ratings


    Original     		PDF AP20GT60W 100oC

    Untitled

    Abstract: No abstract text available
    Text: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage V CE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C


    Original     		PDF AP20GT60SW

    Untitled

    Abstract: No abstract text available
    Text: AP20GT60W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,typ.=1.8V@IC=20A ▼ RoHS Compliant Product VCES 600V IC 20A C G C G TO-3P


    Original     		PDF AP20GT60W 100oC

    Untitled

    Abstract: No abstract text available
    Text: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C High Speed Switching Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A Built-in Fast Recovery Diode VCES 600V IC 20A C C G E E Absolute Maximum Ratings


    Original     		PDF AP20GT60SW -55tor-Emitter

    Untitled

    Abstract: No abstract text available
    Text: AP20GT60P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features High Speed Switching Low Saturation Voltage VCE sat ,typ.=1.8V@IC=20A G C E VCES 600V IC 20A TO-220(P) C RoHS Compliant & Halogen-Free G


    Original     		PDF AP20GT60P-HF O-220

    20GT60W

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP20GT60W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching VCES 600V IC 20A Low Saturation Voltage Typical V CE sat = 1.8V at IC=20A C (tab) G RoHS-compliant, halogen-free C C E G TO-3P (W) E Absolute Maximum Ratings


    Original     		PDF AP20GT60W-HF-3 AP20GT60 20GT60W 20GT60W

    ap20gt60p

    Abstract: No abstract text available
    Text: AP20GT60P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,typ.=1.8V@IC=20A G C E VCES 600V IC 20A TO-220(P) C ▼ RoHS Compliant & Halogen-Free


    Original     		PDF AP20GT60P-HF O-220 ap20gt60p