cef12n6
Abstract: CEP12N6
Text: CEP12N6/CEB12N6 CEF12N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP12N6 600V 0.65Ω 12A 10V CEB12N6 600V 0.65Ω 12A 10V CEF12N6 600V 0.65Ω 12A d 10V D Super high dense cell design for extremely low RDS(ON).
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CEP12N6/CEB12N6
CEF12N6
CEP12N6
CEB12N6
O-263
O-220
O-220F
O-220/263
cef12n6
CEP12N6
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Untitled
Abstract: No abstract text available
Text: R6012FNX Nch 600V 12A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.51W ID 12A PD 50W TO-220FM (3) (1) (2) lFeatures lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.
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R6012FNX
O-220FM
R1102A
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R6012AN
Abstract: No abstract text available
Text: R6012ANX Datasheet Nch 600V 12A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.
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R6012ANX
O-220FM
R1120A
R6012AN
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r6012anx
Abstract: No abstract text available
Text: R6012ANX R6012ANX Datasheet Nch 600V 12A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.
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R6012ANX
O-220FM
R1120A
r6012anx
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R6012ANX
Abstract: No abstract text available
Text: R6012ANX Nch 600V 12A Power MOSFET Datasheet Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.
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R6012ANX
O-220FM
R1120A
R6012ANX
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mosfet 600V 20A
Abstract: L084 to220sis equivalent toshiba mosfet TK12J60U TK15A60U mosfet 12A 600V tk12d60u TK20A60U toshiba cmos memory camera
Text: TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION. Page 1 of 3 TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION STRUCTURE TO INCREASE POWER EFFICIENCY 12A, 15A, or 20A 600V MOSFETs in Second DTMOS Generation Utilize "Superjunction" Technology to Reduce
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releases/2008/power
mosfet 600V 20A
L084
to220sis equivalent
toshiba mosfet
TK12J60U
TK15A60U
mosfet 12A 600V
tk12d60u
TK20A60U
toshiba cmos memory camera
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Untitled
Abstract: No abstract text available
Text: VDRM HTx12-600 = 600 V 3.Gate IT RMS = 12.0A 600V 12A TRIAC 2.T2 1.T1 1.T1 2. T2 3. Gate FEATURES Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=12A) High Commutation dv/dt HTP12-600 HTS12-600 General Description The TRIAC HTP12-600 is suitable for AC switching application, phase
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HTx12-600
HTP12-600
HTS12-600
HTP12-600
50/60Hz,
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Mosfet
Abstract: SSF12N60F
Text: SSF12N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.55Ω (typ.) ID 12A TO220F Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced Process Technology Special designed for PWM, load switching and general purpose applications
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SSF12N60F
O220F
Mosfet
SSF12N60F
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2gat
Abstract: No abstract text available
Text: HTS138-600 HTS138-600 INSULATION TYPE TRIAC TO-220F VDRM = 600 V IT(RMS) = 12A FEATURES 3.T2 Symbol Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=12A) High Commutation dv/dt Isolation Voltage (VISO=1500VAC) 2.Gate 1.T1
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HTS138-600
O-220F)
1500VAC)
O-220F
2gat
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Untitled
Abstract: No abstract text available
Text: SCT12N60FD Triac 600V, 12A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 Features „ Repetitive Peak Off-State Voltage : VDRM=600V
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SCT12N60FD
O-220F-3L
KSD-S0O001-000
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Untitled
Abstract: No abstract text available
Text: KSM12N60C/KSMF12N60C 600V N-Channel MOSFET TO-220 Features • • • • • • TO-220F 12A, 600V, RDS on = 0.65Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 21 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description
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KSM12N60C/KSMF12N60C
O-220
O-220F
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AOTF12N60
Abstract: AOT12N60 VDS-100V AOTF12
Text: AOT12N60 / AOTF12N60 600V, 12A N-Channel MOSFET formerly engineering part number AOT9610/AOTF9610 General Description Features The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance
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AOT12N60
AOTF12N60
AOT9610/AOTF9610
AOT12N60
AOTF12N60
O-220
O-220F
VDS-100V
AOTF12
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
QW-R502-170
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12N60l
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
QW-R502-170
12N60l
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relay 6v 100 ohm
Abstract: electronic relay 6v phase control trigger ht138f IT15A
Text: HT138F-600 Shantou Huashan Electronic Devices Co.,Ltd. INSULATED TYPE TRIAC TO-220F PACKAGE █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-State Current(IT(RMS)=12A) * High Commutation dv/dt *Isolation Voltage（VISO=1500V AC） TO-220F
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HT138F-600
O-220F
O-220F
HBT138F-600
relay 6v 100 ohm
electronic relay 6v
phase control trigger
ht138f
IT15A
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BCR12PM
Abstract: No abstract text available
Text: Preliminary Datasheet BCR12PM-12LC R07DS1242EJ0400 Previous: REJ03G1261-0300 Rev.4.00 Dec 24, 2014 600V – 12A - Triac Medium Power Use Features • • • • • The product guaranteed maximum junction temperature 150°C. • Insulated Type • Planar Passivation Type
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BCR12PM-12LC
R07DS1242EJ0400
REJ03G1261-0300)
PRSS0003AA-B
O-220F
R07DS1242EJ0400
BCR12PM
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60K-MT
12N60K-MT
QW-R502-B06
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Untitled
Abstract: No abstract text available
Text: SCS212AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 12A QC 18nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications
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SCS212AM
O-220FM
R1102S
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AOTF12N60
Abstract: AOT12N60 AOT4N60
Text: AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT12N60/AOTF12N60
AOT12N60
AOTF12N60
O-220
O-220F
AOT12N60
AOT4N60
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM3C1260A •General description ■Features ELM3C1260A uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • Vds=600V • Id=12A • Rds(on) < 0.65Ω (Vgs=10V) ■Maximum absolute ratings
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ELM3C1260A
ELM3C1260A
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25Forward
Abstract: No abstract text available
Text: SCS212AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 12A QC 18nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications
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SCS212AM
O-220FM
R1102S
25Forward
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12N60L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
O-220
12N60
O-220F
O-220F1
QW-R502-170
12N60L
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FL7KM-12A HIGH-SPEED SWITCHING USE FL7KM-12A OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 à • 10V DRIVE • V d s s . 600V rD S ON ( M A X ) . 1 .3D.
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OCR Scan
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FL7KM-12A
O-220FN
30ERATURE
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FL12KM-12A •§;> >>•+. :W> ^ »ft fin*' slljü \e cl 1 *p- "TVi'S 's JJÎ, \\ttVrts &T s°^ HIGH-SPEED SWITCHING USE FL12KM-12A OUTLINE DRAWING Dim ensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 10V DRIVE • V d s s . 600V
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FL12KM-12A
FL12KM-12A
O-22QFN
200PERATURE
57kh23
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