CEF04N6
Abstract: CEF04N6 equivalent CEP04N6 cef04n6 TRANSISTOR equivalent CEB04N6 CEI04N6
Text: CEP04N6/CEB04N6 CEI04N6/CEF04N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP04N6 600V 2.5Ω 4A 10V CEB04N6 600V 2.5Ω 4A 10V CEI04N6 600V 2.5Ω 4A CEF04N6 600V 2.5Ω 4A 10V e 10V D Super high dense cell design for extremely low RDS(ON).
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CEP04N6/CEB04N6
CEI04N6/CEF04N6
CEP04N6
CEB04N6
CEI04N6
CEF04N6
O-220
O-263
O-262
O-220F
CEF04N6
CEF04N6 equivalent
CEP04N6
cef04n6 TRANSISTOR equivalent
CEB04N6
CEI04N6
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CEF04N6
Abstract: CEP04N6 CEF04N6 equivalent CEB04N6 CEI04N6 SWITCHING DIODE 600V 2A
Text: CEP04N6/CEB04N6 CEI04N6/CEF04N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP04N6 600V 2.5Ω 4A 10V CEB04N6 600V 2.5Ω 4A 10V CEI04N6 600V 2.5Ω 4A CEF04N6 600V 2.5Ω 4A 10V e 10V D Super high dense cell design for extremely low RDS(ON).
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CEP04N6/CEB04N6
CEI04N6/CEF04N6
CEP04N6
CEB04N6
CEI04N6
CEF04N6
O-220
O-263
O-262
O-220F
CEF04N6
CEP04N6
CEF04N6 equivalent
CEB04N6
CEI04N6
SWITCHING DIODE 600V 2A
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Untitled
Abstract: No abstract text available
Text: 1 2 D2PAK TO-220 1 - Cathode 2 - Anode Back of Case - Cathode 1 2 1 2 APT4SC60K APT4SC60SA 600V 600V 4A 4A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly
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O-220
APT4SC60K
APT4SC60SA
O-220
O-263
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4a 400V ultra fast diode d2pak
Abstract: GPL6NC60D STGBL6NC60D STGBL6NC60DT4 STGDL6NC60D STGDL6NC60DT4 STGFL6NC60D STGPL6NC60D GFL6NC60D
Text: STGBL6NC60D - STGDL6NC60D STGFL6NC60D - STGPL6NC60D N-channel 600V - 6A - DPAK / D2PAK / TO-220 / TO-220FP Hyper fast IGBT Features Type VCES IC @100°C STGBL6NC60D STGDL6NC60D STGPL6NC60D STGFL6NC60D 600V 600V 600V 600V 8A 7A 8A 4A • Very high frequency operation
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STGBL6NC60D
STGDL6NC60D
STGFL6NC60D
STGPL6NC60D
O-220
O-220FP
STGBL6NC60D
STGFL6NC60D
4a 400V ultra fast diode d2pak
GPL6NC60D
STGBL6NC60DT4
STGDL6NC60D
STGDL6NC60DT4
STGPL6NC60D
GFL6NC60D
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GF8NC60KD
Abstract: JESD97 STGF8NC60KD
Text: STGF8NC60KD N-channel 600V - 4A - TO-220FP Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGF8NC60KD 600V 2.2V 4A • Lower on voltage drop (Vcesat) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■
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STGF8NC60KD
O-220FP
GF8NC60KD
JESD97
STGF8NC60KD
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Untitled
Abstract: No abstract text available
Text: R6004ENJ Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source
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R6004ENJ
SC-83)
R1102A
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zener diode 4.7 v
Abstract: No abstract text available
Text: STP4NM60 N-CHANNEL 600V - 1.4Ω - 4A TO-220 Zener-Protected MDmesh Power MOSFET TARGET DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STP4NM60 600V < 1.6 Ω 4A TYPICAL RDS(on) = 1.4 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY
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O-220
STP4NM60
O-220
zener diode 4.7 v
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Untitled
Abstract: No abstract text available
Text: R6004END Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 20W (2) CPT3 (SC-63) <SOT-428> (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source
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R6004END
SC-63)
OT-428>
R6004E
R1102A
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Untitled
Abstract: No abstract text available
Text: R6004END Nch 600V 4A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 20W (2) CPT3 (SC-63) <SOT-428> (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source
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R6004END
SC-63)
OT-428>
R6004E
R1102A
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Untitled
Abstract: No abstract text available
Text: R6004ENJ Nch 600V 4A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source
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R6004ENJ
SC-83)
R1102A
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Untitled
Abstract: No abstract text available
Text: R6004ENX Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 980mW ID 4A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6004ENX
980mW
O-220FM
R1102A
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STL4NM60
Abstract: No abstract text available
Text: STL4NM60 N-CHANNEL 600V - 1.5Ω - 4A PowerFLAT MDmesh Power MOSFET PROPOSAL DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STL4NM60 600V < 1.8Ω 4A TYPICAL RDS(on) = 1.5Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
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STL4NM60
STL4NM60
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PDF
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Untitled
Abstract: No abstract text available
Text: R6004ENX Nch 600V 4A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 980mW ID 4A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6004ENX
980mW
O-220FM
R1102A
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4A600V
Abstract: 600V,4A DIODE 4A,600V YB311S6
Text: YB311S6 4A ( 600V / 4A ) Outline drawings, mm FAST RECOVERY DIODE 10.5MAX. 4.5MAX. Ø3.2+0.2 -0.1 2.0 17.0±0.3 4.7 6.0 3 1.2 13.0MAX. 3.7 1 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability
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YB311S6
SC-67
YB311S6
4A600V
600V,4A DIODE
4A,600V
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Untitled
Abstract: No abstract text available
Text: FFP04H60S tm Features 4A, 600V Hyperfast 2 Rectifier • High Speed Switching, rrt < 45ns @ IF = 4A The FFP04H60S is a hyperfast 2 rectifier and silicon nitride passivated ion-implanted epitaxial planar construction. • High Reverse Voltage and High Reliability
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FFP04H60S
FFP04H60S
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FFPF04S60S
Abstract: FFPF04S60STU
Text: STEALTH II Rectifier FFPF04S60S tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 4A The FFPF04S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF04S60S
FFPF04S60S
FFPF04S60STU
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FFP04S60S
Abstract: FFP04S60STU F04S
Text: STEALTH II Rectifier FFP04S60S tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 4A The FFP04S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP04S60S
FFP04S60S
FFP04S60STU
F04S
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FFPF60SB60DSTU
Abstract: No abstract text available
Text: STEALTH II Rectifier FFPF60SB60DS tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 4A The FFPF60SB60DS is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF60SB60DS
FFPF60SB60DS
FFPF60SB60DSTU
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mosfet 337
Abstract: Vdss 2000V
Text: MITSUBISHI Neh POWER MOSFET FS4KM-12 HIGH-SPEED SWITCHING USE FS4KM-12 • VDSS . 600V • TDS ON (MAX) . 2.6SÌ • ID . 4A
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FS4KM-12
mosfet 337
Vdss 2000V
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Untitled
Abstract: No abstract text available
Text: FFPF04H60S tm Hyperfast 2 Rectifier Features 4A, 600V Hyperfast 2 Rectifier • High Speed Switching, rrt < 45ns • High Reverse Voltage and High Reliability • Low Forward Voltage, VF < 2.1V @ 4A • RoHS compliant The FFPF04H60S is a hyperfast 2 rectifier and silicon nitride
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FFPF04H60S
FFPF04H60S
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R460p2
Abstract: ISL9R460S2 ISL9R460S3S ISL9R460S3ST TA49408 TB334 ISL9R460P2
Text: ISL9R460P2, ISL9R460S2, ISL9R460S3S 4A, 600V Stealth Diode General Description Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 3 The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are Stealth™ diodes optimized for low loss performance in
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ISL9R460P2,
ISL9R460S2,
ISL9R460S3S
ISL9R460S2
ISL9R460S3S
175oC
R460p2
ISL9R460S3ST
TA49408
TB334
ISL9R460P2
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Untitled
Abstract: No abstract text available
Text: STEALTH II Rectifier FFPF60SB60DS tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 4A • High Reverse Voltage and High Reliability The FFPF60SB60DS is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF60SB60DS
FFPF60SB60DS
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Untitled
Abstract: No abstract text available
Text: ISL9R460P2, ISL9R460S2, ISL9R460S3S 4A, 600V Stealth Diode General Description Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 3 The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are Stealth™ diodes optimized for low loss performance in
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ISL9R460P2,
ISL9R460S2,
ISL9R460S3S
ISL9R460S2
ISL9R460S3S
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Untitled
Abstract: No abstract text available
Text: STEALTH II Rectifier FFP04S60S tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 4A • High Reverse Voltage and High Reliability The FFP04S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP04S60S
FFP04S60S
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