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    600V,4A DIODE Search Results

    600V,4A DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    RJU60C6TDPP-AJ#T2 Renesas Electronics Corporation 600V - 50A - Single Diode Fast Recovery Diode Visit Renesas Electronics Corporation
    RJU60C6SDPQ-A0#T2 Renesas Electronics Corporation 600V - 25A - Single Diode Fast Recovery Diode Visit Renesas Electronics Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
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    600V,4A DIODE Price and Stock

    Diodes Incorporated 1N5226B

    Diode Zener Single 3.3V 5% 500mW 2-Pin DO-35
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5226B 691
    • 1 $2.11
    • 10 $2.11
    • 100 $0.918
    • 1000 $0.3
    • 10000 $0.3
    		Buy Now

    Diodes Incorporated 1N973B

    Diode Zener Single - 33V - 5% - 500mW - 2-Pin - DO-35.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N973B 3
    • 1 $3.06
    • 10 $3.06
    • 100 $1.15
    • 1000 $0.65
    • 10000 $0.65
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    Diodes Incorporated 1N5222B

    Diode Zener Single 2.5V 5% 500mW 2-Pin DO-35
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5222B 1
    • 1 $5.07
    • 10 $5.07
    • 100 $2.12
    • 1000 $1.17
    • 10000 $1.17
    		Buy Now

    Diodes Incorporated 1N5234B

    Diode Zener Single 6.2V 5% 500mW 2-Pin DO-35
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5234B 931
    • 1 $0.342
    • 10 $0.342
    • 100 $0.278
    • 1000 $0.278
    • 10000 $0.278
    		Buy Now

    Diodes Incorporated 1N4752A

    Diode Zener Single 33V 5% 1W 2-Pin DO-41
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N4752A 64
    • 1 $1.13
    • 10 $1.13
    • 100 $0.452
    • 1000 $0.1659
    • 10000 $0.0749
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    Find more 600V,4A DIODE price and stock on Findchips.com

    600V,4A DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CEF04N6

    Abstract: CEF04N6 equivalent CEP04N6 cef04n6 TRANSISTOR equivalent CEB04N6 CEI04N6
    Text: CEP04N6/CEB04N6 CEI04N6/CEF04N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP04N6 600V 2.5Ω 4A 10V CEB04N6 600V 2.5Ω 4A 10V CEI04N6 600V 2.5Ω 4A CEF04N6 600V 2.5Ω 4A 10V e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP04N6/CEB04N6 CEI04N6/CEF04N6 CEP04N6 CEB04N6 CEI04N6 CEF04N6 O-220 O-263 O-262 O-220F CEF04N6 CEF04N6 equivalent CEP04N6 cef04n6 TRANSISTOR equivalent CEB04N6 CEI04N6

    CEF04N6

    Abstract: CEP04N6 CEF04N6 equivalent CEB04N6 CEI04N6 SWITCHING DIODE 600V 2A
    Text: CEP04N6/CEB04N6 CEI04N6/CEF04N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP04N6 600V 2.5Ω 4A 10V CEB04N6 600V 2.5Ω 4A 10V CEI04N6 600V 2.5Ω 4A CEF04N6 600V 2.5Ω 4A 10V e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP04N6/CEB04N6 CEI04N6/CEF04N6 CEP04N6 CEB04N6 CEI04N6 CEF04N6 O-220 O-263 O-262 O-220F CEF04N6 CEP04N6 CEF04N6 equivalent CEB04N6 CEI04N6 SWITCHING DIODE 600V 2A

    Untitled

    Abstract: No abstract text available
    Text: 1 2 D2PAK TO-220 1 - Cathode 2 - Anode Back of Case - Cathode 1 2 1 2 APT4SC60K APT4SC60SA 600V 600V 4A 4A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly


    Original     		PDF O-220 APT4SC60K APT4SC60SA O-220 O-263

    4a 400V ultra fast diode d2pak

    Abstract: GPL6NC60D STGBL6NC60D STGBL6NC60DT4 STGDL6NC60D STGDL6NC60DT4 STGFL6NC60D STGPL6NC60D GFL6NC60D
    Text: STGBL6NC60D - STGDL6NC60D STGFL6NC60D - STGPL6NC60D N-channel 600V - 6A - DPAK / D2PAK / TO-220 / TO-220FP Hyper fast IGBT Features Type VCES IC @100°C STGBL6NC60D STGDL6NC60D STGPL6NC60D STGFL6NC60D 600V 600V 600V 600V 8A 7A 8A 4A • Very high frequency operation


    Original     		PDF STGBL6NC60D STGDL6NC60D STGFL6NC60D STGPL6NC60D O-220 O-220FP STGBL6NC60D STGFL6NC60D 4a 400V ultra fast diode d2pak GPL6NC60D STGBL6NC60DT4 STGDL6NC60D STGDL6NC60DT4 STGPL6NC60D GFL6NC60D

    GF8NC60KD

    Abstract: JESD97 STGF8NC60KD
    Text: STGF8NC60KD N-channel 600V - 4A - TO-220FP Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGF8NC60KD 600V 2.2V 4A • Lower on voltage drop (Vcesat) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■


    Original     		PDF STGF8NC60KD O-220FP GF8NC60KD JESD97 STGF8NC60KD

    Untitled

    Abstract: No abstract text available
    Text: R6004ENJ Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source


    Original     		PDF R6004ENJ SC-83) R1102A

    zener diode 4.7 v

    Abstract: No abstract text available
    Text: STP4NM60 N-CHANNEL 600V - 1.4Ω - 4A TO-220 Zener-Protected MDmesh Power MOSFET TARGET DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STP4NM60 600V < 1.6 Ω 4A TYPICAL RDS(on) = 1.4 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY


    Original     		PDF O-220 STP4NM60 O-220 zener diode 4.7 v

    Untitled

    Abstract: No abstract text available
    Text: R6004END Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 20W (2) CPT3 (SC-63) <SOT-428> (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source


    Original     		PDF R6004END SC-63) OT-428> R6004E R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6004END Nch 600V 4A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 20W (2) CPT3 (SC-63) <SOT-428> (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source


    Original     		PDF R6004END SC-63) OT-428> R6004E R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6004ENJ Nch 600V 4A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source


    Original     		PDF R6004ENJ SC-83) R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6004ENX Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 980mW ID 4A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6004ENX 980mW O-220FM R1102A

    STL4NM60

    Abstract: No abstract text available
    Text: STL4NM60 N-CHANNEL 600V - 1.5Ω - 4A PowerFLAT MDmesh Power MOSFET PROPOSAL DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STL4NM60 600V < 1.8Ω 4A TYPICAL RDS(on) = 1.5Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE


    Original     		PDF STL4NM60 STL4NM60

    Untitled

    Abstract: No abstract text available
    Text: R6004ENX Nch 600V 4A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 980mW ID 4A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6004ENX 980mW O-220FM R1102A

    4A600V

    Abstract: 600V,4A DIODE 4A,600V YB311S6
    Text: YB311S6 4A ( 600V / 4A ) Outline drawings, mm FAST RECOVERY DIODE 10.5MAX. 4.5MAX. Ø3.2+0.2 -0.1 2.0 17.0±0.3 4.7 6.0 3 1.2 13.0MAX. 3.7 1 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability


    Original     		PDF YB311S6 SC-67 YB311S6 4A600V 600V,4A DIODE 4A,600V

    Untitled

    Abstract: No abstract text available
    Text: FFP04H60S tm Features 4A, 600V Hyperfast 2 Rectifier • High Speed Switching, rrt < 45ns @ IF = 4A The FFP04H60S is a hyperfast 2 rectifier and silicon nitride passivated ion-implanted epitaxial planar construction. • High Reverse Voltage and High Reliability


    Original     		PDF FFP04H60S FFP04H60S

    FFPF04S60S

    Abstract: FFPF04S60STU
    Text: STEALTH II Rectifier FFPF04S60S tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 4A The FFPF04S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFPF04S60S FFPF04S60S FFPF04S60STU

    FFP04S60S

    Abstract: FFP04S60STU F04S
    Text: STEALTH II Rectifier FFP04S60S tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 4A The FFP04S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFP04S60S FFP04S60S FFP04S60STU F04S

    FFPF60SB60DSTU

    Abstract: No abstract text available
    Text: STEALTH II Rectifier FFPF60SB60DS tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 4A The FFPF60SB60DS is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFPF60SB60DS FFPF60SB60DS FFPF60SB60DSTU

    Untitled

    Abstract: No abstract text available
    Text: FFPF04H60S tm Hyperfast 2 Rectifier Features 4A, 600V Hyperfast 2 Rectifier • High Speed Switching, rrt < 45ns • High Reverse Voltage and High Reliability • Low Forward Voltage, VF < 2.1V @ 4A • RoHS compliant The FFPF04H60S is a hyperfast 2 rectifier and silicon nitride


    Original     		PDF FFPF04H60S FFPF04H60S

    R460p2

    Abstract: ISL9R460S2 ISL9R460S3S ISL9R460S3ST TA49408 TB334 ISL9R460P2
    Text: ISL9R460P2, ISL9R460S2, ISL9R460S3S 4A, 600V Stealth Diode General Description Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 3 The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are Stealth™ diodes optimized for low loss performance in


    Original     		PDF ISL9R460P2, ISL9R460S2, ISL9R460S3S ISL9R460S2 ISL9R460S3S 175oC R460p2 ISL9R460S3ST TA49408 TB334 ISL9R460P2

    Untitled

    Abstract: No abstract text available
    Text: STEALTH II Rectifier FFPF60SB60DS tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 4A • High Reverse Voltage and High Reliability The FFPF60SB60DS is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFPF60SB60DS FFPF60SB60DS

    Untitled

    Abstract: No abstract text available
    Text: ISL9R460P2, ISL9R460S2, ISL9R460S3S 4A, 600V Stealth Diode General Description Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 3 The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are Stealth™ diodes optimized for low loss performance in


    Original     		PDF ISL9R460P2, ISL9R460S2, ISL9R460S3S ISL9R460S2 ISL9R460S3S

    Untitled

    Abstract: No abstract text available
    Text: STEALTH II Rectifier FFP04S60S tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 4A • High Reverse Voltage and High Reliability The FFP04S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFP04S60S FFP04S60S

    mosfet 337

    Abstract: Vdss 2000V
    Text: MITSUBISHI Neh POWER MOSFET FS4KM-12 HIGH-SPEED SWITCHING USE FS4KM-12 • VDSS . 600V • TDS ON (MAX) . 2.6SÌ • ID . 4A


    OCR Scan     		PDF FS4KM-12 mosfet 337 Vdss 2000V