Untitled
Abstract: No abstract text available
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2N4403 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View C B PNP General Purpose Amplifier
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2N4403
600mWatts
30Vdc,
OT-23
IC/10
25MHz
200MHz
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Untitled
Abstract: No abstract text available
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2N3904 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View C B NPN General Purpose Amplifier
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2N3904
600mWatts
30Vdc,
IC/10
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hFE-20
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# PN2222A Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View C B NPN General Purpose Amplifier
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PN2222A
600mWatts
10mAdc,
60Vdc,
10Vdc)
150mAdc,
hFE-20
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# PN2907A Features • • x Through Hole Package Capable of 600mWatts of Power Dissipation Case Material: Molded Plastic. UL Flammability
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PN2907A
600mWatts
MPS2907A
10mAdc,
30Vdc,
50Vdc,
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2N3906
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N3906 Features • • x Through Hole Package Capable of 600mWatts of Power Dissipation and 200mA Ic. Case Material: Molded Plastic. UL Flammability
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2N3906
600mWatts
200mA
30Vdc,
2N3906
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LTC5569
Abstract: LTC5583
Text: LTC5569 300MHz to 4GHz 3.3V Dual Active Downconverting Mixer FEATURES n n n n n n n n n n n n DESCRIPTION High IIP3: 26.8dBm at 1950MHz 2dB Conversion Gain Low Noise Figure: 11.7dB at 1950MHz 17dB NF Under 5dBm Blocking 44dB Channel Isolation Low Power: 3.3V/600mW Total
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LTC5569
300MHz
1950MHz
V/600mW
16-Lead
31dBm
14GHz,
72dBm
78dBFS
LTC5569
LTC5583
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N4403 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View
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Original
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PDF
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2N4403
600mWatts
30Vdc,
10mAdc,
150mAdc,
500m30
OT-23
25MHz
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N4403 Features • • x x Through Hole Package Capable of 600mWatts of Power Dissipation Case Material: Molded Plastic. UL Flammability
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Original
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PDF
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2N4403
600mWatts
-30Vdc,
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2N3904
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N3904 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View
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2N3904
600mWatts
30Vdc,
10mAdc,
50mAdc,
100mA=
IC/10
2N3904
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2N3906
Abstract: No abstract text available
Text: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 2N3906 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View C B PNP General Purpose Amplifier E TO-92 Electrical Characteristics @ 25°C Unless Otherwise Specified
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2N3906
600mWatts
30Vdc,
IC/10
2N3906
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Untitled
Abstract: No abstract text available
Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2N3906 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View C B PNP General Purpose Amplifier E TO-92 Electrical Characteristics @ 25°C Unless Otherwise Specified
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2N3906
600mWatts
30Vdc,
IC/10
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2N3904
Abstract: No abstract text available
Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2N3904 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View C B NPN General Purpose Amplifier E TO-92 Electrical Characteristics @ 25°C Unless Otherwise Specified
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2N3904
600mWatts
30Vdc,
IC/10
2N3904
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2SB1321A
Abstract: 2SD1992A
Text: Transistor 2SB1321A Silicon PNP epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 0.15 ● Allowing supply with the radial taping. Large collector power dissipation PC. 600mW 1.0 ●
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2SB1321A
2SD1992A
600mW)
2SB1321A
2SD1992A
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10VDC
Abstract: MPS2222A hFE-20
Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MPS2222A Features • • • Through Hole Package Capable of 600mWatts of Power Dissipation Collector-current 0.6A Pin Configuration Bottom View C B NPN General Purpose Amplifier
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MPS2222A
600mWatts
10mAdc,
60Vdc,
IC/10
10VDC
MPS2222A
hFE-20
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N3906 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View C B PNP General Purpose Amplifier
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2N3906
600mWatts
30Vdc,
IC/10
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SOT-23 2N4403
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N4403-TS01 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View C B PNP General
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2N4403-TS01
600mWatts
30Vdc,
IC/10
25MHz
200MHz
SOT-23 2N4403
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# PN2907A Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration
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PN2907A
600mWatts
10mAdc,
30Vdc,
50Vdc,
10Vdc)
OT-23
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TG110-S050N2RL
Abstract: 100BASE-FX DP83849ID DP83849IDVS FREQ100 LEN100 DTH 5815
Text: DP83849ID PHYTER DUAL Industrial Temperature with Fiber Support FX Dual Port 10/100 Mb/s Ethernet Physical Layer Transceiver Features General Description • Low-power 3.3V, 0.18µm CMOS technology • Low power consumption <600mW Typical • 3.3V MAC Interface
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DP83849ID
600mW
TG110-S050N2RL
100BASE-FX
DP83849IDVS
FREQ100
LEN100
DTH 5815
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Untitled
Abstract: No abstract text available
Text: ECG1417 Linear ICs Chroma Processor Circuit status Nom. Supp V 12 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)70 Package StyleDIP Mounting StyleT Pinout Equivalence CodeN/A # PinsN/A Ckt. (Pinout) Number DescriptionTV Signal Processor;Pd: 600mW
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ECG1417
600mW
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Untitled
Abstract: No abstract text available
Text: RCJ080N25 Datasheet Nch 250V 8.0A Power MOSFET lOutline VDSS 250V RDS on (Max.) 600mW ID 8.0A PD 35W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.
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RCJ080N25
600mW
SC-83)
R1120A
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PN2222A
Abstract: No abstract text available
Text: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 PN2222A Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View C B NPN General Purpose Amplifier E Electrical Characteristics @ 25°C Unless Otherwise Specified
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PN2222A
600mWatts
10mAdc,
60Vdc,
IC/10
PN2222A
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2SC1166
Abstract: 2sc1166y transistor BC RH 2sc1166-0 2sc1166 o 2SA661 2SC1166-Y 16F TRANSISTOR RH-16 2SC1166-GR
Text: i/U 3 > N P N x ti* * 5 /7 h 7 > v X i/ P C m SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS) 2SC1166 O Driver Stage Amplifier Applications. Voltage Amplifier Applications. O • S t f E - t r f ; V Ceo ^ 5 0 V • : Pc = 600mW (Ta=25°C) • 2SA 661 t ^ y 7 ° ) s y * y
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2SC1166
600mW
2SA661
2SA661
RH-16
100mA,
200mA
-10mA
2SC1166
2SC1166â
2sc1166y
transistor BC RH
2sc1166-0
2sc1166 o
2SC1166-Y
16F TRANSISTOR
RH-16
2SC1166-GR
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Untitled
Abstract: No abstract text available
Text: am m m Chatsmrth, CA m Micmsemi 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 2N4401 Features • • Through Hole Package Capable of 600mWatts of Power Dlssipat'On NPN General Purpose Amplifier Pin Configuration Bottom Vie w
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2N4401
600mWatts
10mAdc,
35Vdc,
150mAdc
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • 1024-words x 4-bit organization • Address access time: 5/7/8/10/15 ns • Low power dissipation: 600mW (typ.)
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IDT10A474
IDT100A474
IDT101A474
1024-words
600mW
IDT10A474,
101A474
096-bit
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