C2665
Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
Text: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)
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CY7C266
CY7C266
600-mil-wide
C2665
C2668
7c26
C2662
C266
27C64
R1250
C2666
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QP7C261-25LI
Abstract: GDFP2-F24 5962-9080307MJA QP7C261 CQCC1-N28 QP7C261-35QMB 5962-9080306MLA QP7C263-25JC QP7C264 QP7C261-25WMB
Text: QP7C261 / QP7C263 / QP7C264 May 4, 2011 8K x 8 Power-Switched and Reprogrammable PROM Features • 5V ±10% VCC, commercial, industrial and military • Windowed Packages available for reprogrammability • OTP One-Time-Programmable Packages available • High speed
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QP7C261
QP7C263
QP7C264
300-mil
600-mil
QP7C261)
QP7C261,
QP7C263,
QP7C264
8192-word
QP7C261-25LI
GDFP2-F24
5962-9080307MJA
CQCC1-N28
QP7C261-35QMB
5962-9080306MLA
QP7C263-25JC
QP7C261-25WMB
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Untitled
Abstract: No abstract text available
Text: 86 CY7C186 8Kx8 Static RAM Features provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers. The device has an automatic power-down feature (CE1), reducing the power consumption by over 80%
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CY7C186
CY7C186
600-mil-wide
32-pin
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PLS100N
Abstract: PLS100 PLS100A application of programmable array logic pls100* fusing PLS101 PLS101A PLS101N Philips PLs100n
Text: Philips Semiconductors Programmable Logic Devices Product specification Programmable logic arrays 16 x 48 × 8 DESCRIPTION The PLS100 (3-State) and PLS101 (Open Collector) are bipolar, fuse Programmable Logic Arrays (PLAs). Each device utilizes the standard AND/OR/Invert architecture to
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PLS100
PLS101
PLS100
PLS101
PLS100/PLS101
DIN100
NIN100
OUT100
EXOR100
NOE100
PLS100N
PLS100A
application of programmable array logic
pls100* fusing
PLS101A
PLS101N
Philips PLs100n
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SCN2681AC1A44
Abstract: SCN2681A pin configuration 74LS04 SCN2681 SCN2681AC1N24 SCN2681AC1N28 SCN2681AC1N40 SCN2681AE1A44 SCN2681AE1N24 SCN2681AE1N28
Text: INTEGRATED CIRCUITS SCN2681 Dual asynchronous receiver/transmitter DUART Product specification Supersedes data of 1995 May 01 IC19 Data Handbook Philips Semiconductors 1998 Sep 04 Philips Semiconductors Product specification Dual asynchronous receiver/transmitter (DUART)
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SCN2681
16-bit
SCN2681
SCN2681AC1A44
SCN2681A
pin configuration 74LS04
SCN2681AC1N24
SCN2681AC1N28
SCN2681AC1N40
SCN2681AE1A44
SCN2681AE1N24
SCN2681AE1N28
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Untitled
Abstract: No abstract text available
Text: FTE512S8N 4 Megabit CMOS EEPROM DESCRIPTION: The FTE512S8N is a 512K X 8 high-density, low-power EEPROM module comprised of four ceramic 128K X 8 monolithic EEPROM’s, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on a co-fired ceramic substrate
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FTE512S8N
FTE512S8N
600-mil-wide,
32-pin
250ns
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Signetics 27c64
Abstract: 27C64A 27C64A-12 27C64A-15 27C64A-20 27C64AI15 27C64AI20
Text: Philips Components-Signetics Document No. 853-0081 2 7 C 6 4 A ECN No. 01039 Date of Issue November 12, 1990 64K-bit CMOS EPROM 8K x 8 Status Product Specification Memory Products D ESC R IPT IO N FEA TU RES Philips Components-Signetics 27C64A C M O S E P R O M is a 65,536-bit 5V read
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27C64A
64K-bit
536-bit
Signetics 27c64
27C64A-12
27C64A-15
27C64A-20
27C64AI15
27C64AI20
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CY7C263-35PC
Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
Text: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)
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CY7C261
C263/CY7C264
7C261)
300-mil
600-mil
CY7C261,
CY7C263,
CY7C264
8192-word
byGY7C264
CY7C263-35PC
7C261
CY7C263
CY7C26345DMB
cerdip z PACKAGE
7C264
C261
f1b0
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CY7C185A-20LMB
Abstract: 7c186a CY7C186A-20DMB C105a CY7C185A CY7C186A-45DMB Y7C185 ZF78 CY7C185A-45LMB
Text: CYPRESS S E MI CONDUCTOR m 4GE D 250=1^2 DGOSGQÖ 7 H I C Y P 7-V£-23-/Z CY7C185A CY7C186A C Y PR FSS SEMICONDUCTOR F unctional D escrip tion Features Automatic power-down when deselected CMOS for optimum speed/power High speed - 20 ns Low active power -
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vi-23-
CY7C185A
CY7C186A
CY7C186A
T-46-23-12
CY7C185A-20LMB
7c186a
CY7C186A-20DMB
C105a
CY7C186A-45DMB
Y7C185
ZF78
CY7C185A-45LMB
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7c251
Abstract: a1s smd smd code A1s smd diode code A1s CY7C251 CY7C254 65WMB
Text: CY7C251 CY7C254 y CYPRESS 16K x 8 Power-Switched and Reprogrammable PROM • Direct replacement for bipolar PRO M s • C apable o f w ithstanding > 2001V static discharge Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed
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CY7C251
CY7C254
7C251)
300-mil
600-mil
CY7C254
384-word
Y7C251
7c251
a1s smd
smd code A1s
smd diode code A1s
65WMB
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Untitled
Abstract: No abstract text available
Text: CY7C251 CY7C254 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns 16,384 x 8 PROM Power Switched and Reprogrammable • TTL-compatible I/O • D irect replacement for bipolar PROMs • Capable o f w ithstanding > 2001V stat
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CY7C251
CY7C254
7C251)
300-m
600-mil
CY7C251
CY7C254
384-word
PROMs3802
CY7C254â
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Untitled
Abstract: No abstract text available
Text: ^ SS WS CYPRESS PRELIMINARY , .^= 131,072 x 8 Static R/W RAM SEMICONDUCTOR Features Functional Description • H ighspeed — tAA = 25 ns T h e CY 7C108 an d CY 7C109 are high-perform anceC M O S static R A M s organized as 131,072 w ords by 8 bits. Easy m em ory ex
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7C108
7C109
CY7C109
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTEMS 4 Megabit CMOS EEPROM DPE512S8N DESCRIPTION: The DPE512S8N is a 512K X 8 high-density, low-power EEPROM module comprised of four ceramic 128K X 8 monolithic EEPROM's, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on a co-fired ceramic substrate
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DPE512S8N
DPE512S8N
600-mil-wide,
32-pin
300ns
30A046-00
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64150J
Abstract: No abstract text available
Text: CY27C64 ïj CYPRESS 8K x 8 EPROM Features • TTL-corapatible I/O • CMOS for optimum speed/power Functional Description • Windowed for reprogrammability • High speed — 70 ns commercial • Low power — 440 mW (commercial) — 530 mW (military) • Super low standby power
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CY27C64
CY27C64
600-mil-wide
28-Lead
600-Mil)
27C64â
64150J
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7c186
Abstract: CY7C185-15VC die 7C185
Text: CY7C185 CY7C186 CYPRESS SEMICONDUCTOR Features 8,192 x 8 Static R/W RAM the memory. When CEj and WE inputs are both LOW and CE2 is H IG H , data on the The CY7C185 and CY7C186 are high-per- eight data input/output pins I/Oo through 1/ formanceCMOS static RAMs organized as O7 is written into the memory location ad8192 words by 8 bits. Easy memory expan dressedby the address present on the address
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CY7C185
CY7C186
CY7C186
ad8192
CY7C185--
7c186
CY7C185-15VC die
7C185
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Untitled
Abstract: No abstract text available
Text: PA C 8 Megabit High Speed CM OS SRAM M i € R Ù S Y 'S-1 E M S DPS1MX8MKN3 DESCRIPTION: The DPS1.MX8MKN3 High Speed SRAM "STACK" devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Lead less Chip Carriers SLCQ mounted on a co-fired
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600-mil-wide,
32-pin
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27c256-15
Abstract: 27C256-20
Text: Philips Components-Signetics 27C256 Document No. 8 5 3 -0 0 94 ECN No. 0 10 4 0 Date of Issue N ove m b e r 1 2 ,1 9 9 0 Status Pro du ct S p ecification 256K-bit CMOS EPROM 32K x 8 M e m ory P ro du cts PIN CONFIGURATION DESCRIPTION FEATURES Philips C o m p o n e n ts -S ig n e tic s 27C 256
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27C256
256K-bit
27c256-15
27C256-20
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Untitled
Abstract: No abstract text available
Text: D PS5 1 2 S8 P 512KX8 CMOS SRAM MODULE DESCRIPTION: T h e D P S 512 S 8P is a 5 1 2K X 8 high-density, low-power static RAM module comprised of four 12 8 K X 8 m o no lithic S R A M 's, an advanced high-speed C M O S d e co d er and deco up ling capacitors surface mounted on a co-fired ceramic
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512KX8
DPS512S8P
600-mil-wide,
32-pin
A0-A18
DPS512S8P
100ns
120ns
150ns
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Untitled
Abstract: No abstract text available
Text: DPS256S8AN Dense-Pac Microsystems, Inc. O HIGH SPEED MILITARY 256K X 8 CMOS SRAM MODULE ADVANCED INFORMATION DESCRIPTION: The DPS256S8AN is a high speed military 256K X 8 high-density, low-power static RAM module comprised of two high speed ceramic 128K X 8 monolithic
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DPS256S8AN
DPS256S8AN
600-mil-wide,
32-pin
30A036-31
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Untitled
Abstract: No abstract text available
Text: D EN SE-PA C 8 Megabit CMOS SRAM M I C R O S Y S T E M S DPS1MS8MP DESCRIPTION: The D PS1M S8M P is a IM eg x 8 high-density, low-power static RAM module comprised of two 512K x 8 monolithicSRAM's,an advanced high-speed CMOS decoder and decouplingcapacitors surface mounted on
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600-mil-wide,
32-pin
30A143-00
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Untitled
Abstract: No abstract text available
Text: □PM DPS256S8P Dense-Pac Microsystems, Inc. 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The D P S256 S8P is a 256K X 8 high-density, low-power static RAM module comprised of two 1 2 8 K X 8 m o no lithic SR A M 's, an advanced high-speed C M O S d e co d er and deco upling
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DPS256S8P
DPS256S8P
600-mil-wide,
32-pin
S256S8P
120ns
150ns
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LC 7258
Abstract: 7C266 203CE
Text: CY7C266 / CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)
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CY7C266
CY7C266
32-Pin
28-Lead
600-Mil)
LC 7258
7C266
203CE
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Untitled
Abstract: No abstract text available
Text: PLUS405 Signetics Field-Programmable Logic Sequencer 16 x 64 x 8 Military Application Specific Products Signetics Programmable Logic Product Specification • Series 28 PIN CONFIGURATION DESCRIPTION FEATURES The PLUS405 device is a bipolar programmable state machine ol the Mealy
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PLUS405
PLUS405
28-Pin
600mil-wide
PLUS405/BXA
PLUS405/B3A
PLUS405/BYA
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Programmable Logic Devices Programmable logic sequencer 16x48x8 PLUS105-45 DESCRIPTION FEATURES The PLUS105-45 is a bipolar programmable state machine of the Mealy type. Both the AND and the OR array are userprogrammable. All 48 AND gates are
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16x48x8)
PLUS105-45
PLUS105-45
I0-115)
45MHz
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