Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    600 VOLTS STEP UP TO 800 VOLTS Search Results

    600 VOLTS STEP UP TO 800 VOLTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67S580FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=1.6 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S581FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S539FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=2/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TB67S141AFTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=84/Iout(A)=3/Phase Interface Visit Toshiba Electronic Devices & Storage Corporation
    TB67S149AFTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=84/Iout(A)=3/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation

    600 VOLTS STEP UP TO 800 VOLTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Calex

    Abstract: design the instrumentation amplifier with bridge type transducer d303 d303 PA
    Text: Model 436 Bridgesensor Features Description ! Complete Strain Gage Bridge Signal Conditioner ! 4-20 mA or 12 ±8mA Output ! Contains Isolated DC/DC Converter ! Use with 0.5mV/V to 10mV/V Sensors ! Drives Four 350 ohm Bridges at 10 Volts The Model 436 is a self contained, current output, DC powered


    Original     		PDF 10mV/V D-303 Calex design the instrumentation amplifier with bridge type transducer d303 d303 PA

    AN569

    Abstract: MTB6N60E SMD310
    Text: MOTOROLA Order this document by MTB6N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB6N60E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS on = 1.2 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTB6N60E/D MTB6N60E AN569 MTB6N60E SMD310

    18004D2

    Abstract: MJB18004D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SOT223 Package
    Text: ON Semiconductort High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network MJB18004D2T4 POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS D2PAK For Surface Mount The MJB18004D2T4 is state–of–art High Speed High gain Bipolar


    Original     		PDF MJB18004D2T4 MJB18004D2T4 18004D2 r14525 MJB18004D2T4/D 18004D2 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SOT223 Package

    Untitled

    Abstract: No abstract text available
    Text: MMDF4C03HD Power MOSFET 4 Amps, 30 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMDF4C03HD r14525 MMDF4C03HD/D

    AN569

    Abstract: MMDF4C03HD MMDF4C03HDR2 SMD310
    Text: MMDF4C03HD Preferred Device Advance Information Power MOSFET 4 Amps, 30 Volts Complementary SO–8, Dual http://onsemi.com These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMDF4C03HD r14525 MMDF4C03HD/D AN569 MMDF4C03HD MMDF4C03HDR2 SMD310

    FT960

    Abstract: MMFT960T1 SMD310
    Text: MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc–dc converters, solenoid and relay drivers. The device is housed in the SOT–223


    Original     		PDF MMFT960T1 r14525 MMFT960T1/D FT960 MMFT960T1 SMD310

    2N02L

    Abstract: MMFT2N02EL MMFT2N02ELT1 AN569
    Text: MMFT2N02EL Preferred Device Power MOSFET 2 Amps, 20 Volts N–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new


    Original     		PDF MMFT2N02EL r14525 MMFT2N02EL/D 2N02L MMFT2N02EL MMFT2N02ELT1 AN569

    2955E

    Abstract: AN569 MMFT2955E MMFT2955ET1 MMFT2955ET3
    Text: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.


    Original     		PDF MMFT2955E r14525 MMFT2955E/D 2955E AN569 MMFT2955E MMFT2955ET1 MMFT2955ET3

    Untitled

    Abstract: No abstract text available
    Text: Crane Aerospace & Electronics Power Solutions MHV Single, Dual and Triple DC-DC Converters 28 Volt input – 15 Watt Features No cross regulation on dual outputs • Operating temperature -55°C to +125°C • Input voltage range 16 to 50 volts • Transient protection 80 V for 120 ms


    Original     		PDF APP-009

    MTD1N80E

    Abstract: AN569 SMD310
    Text: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor DPAK for Surface Mount MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM


    Original     		PDF MTD1N80E/D MTD1N80E MTD1N80E/D* MTD1N80E AN569 SMD310

    1P40E

    Abstract: No abstract text available
    Text: MTD1P40E Preferred Device Advance Information Power MOSFET 1 Amp, 400 Volts P−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		PDF MTD1P40E r14525 MTD1P40E/D 1P40E

    Untitled

    Abstract: No abstract text available
    Text: MTB20N20E Preferred Device Power MOSFET 20 Amps, 200 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		PDF MTB20N20E r14525 MTB20N20E/D

    AN569

    Abstract: MTD1N80E SMD310
    Text: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTD1N80E/D MTD1N80E MTD1N80E/D* AN569 MTD1N80E SMD310

    NTTS2P03R2

    Abstract: SMD310
    Text: NTTS2P03R2 Product Preview Power MOSFET -2.48 Amps, -30 Volts P–Channel Enhancement Mode Single Micro8 Package http://onsemi.com Features • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature Micro8 Surface Mount Package


    Original     		PDF NTTS2P03R2 r14525 NTTS2P03R2/D NTTS2P03R2 SMD310

    NTTD1P02R2

    Abstract: SMD310 QT18
    Text: NTTD1P02R2 Product Preview Power MOSFET -1.45 Amps, -20 Volts P–Channel Enhancement Mode Dual Micro8 Package http://onsemi.com Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual Micro8 Surface Mount Package


    Original     		PDF NTTD1P02R2 r14525 NTTD1P02R2/D NTTD1P02R2 SMD310 QT18

    1P40E

    Abstract: MTD1P40E AN569 MTD1P40E1 MTD1P40ET4
    Text: MTD1P40E Preferred Device Advance Information Power MOSFET 1 Amp, 400 Volts P–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		PDF MTD1P40E r14525 MTD1P40E/D 1P40E MTD1P40E AN569 MTD1P40E1 MTD1P40ET4

    AN569

    Abstract: MTB20N20E MTB20N20ET4
    Text: MTB20N20E Preferred Device Power MOSFET 20 Amps, 200 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for


    Original     		PDF MTB20N20E r14525 MTB20N20E/D AN569 MTB20N20E MTB20N20ET4

    6P02

    Abstract: NTF6P02T3 SMD310
    Text: NTF6P02T3 Power MOSFET -6.0 Amps, -20 Volts P–Channel SOT–223 Features • • • • http://onsemi.com Low RDS on Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified –6.0 AMPERES –20 VOLTS RDS(on) = 44 mW (Typ.)


    Original     		PDF NTF6P02T3 r14525 NTF6P02T3/D 6P02 NTF6P02T3 SMD310

    Power logic MOSFET SOT-223

    Abstract: 2N02l 1000 watts ups circuit diagram dc marking code dpak sot-223 code marking 2N3904 AN569 MMFT2N02EL MMFT2N02ELT1 SMD310
    Text: MMFT2N02EL Preferred Device Power MOSFET 2 Amps, 20 Volts N−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new


    Original     		PDF MMFT2N02EL OT-223 OT-223 MMFT2N02EL/D Power logic MOSFET SOT-223 2N02l 1000 watts ups circuit diagram dc marking code dpak sot-223 code marking 2N3904 AN569 MMFT2N02EL MMFT2N02ELT1 SMD310

    mosfet transistor 800 volts.200 amperes

    Abstract: No abstract text available
    Text: MTSF2P03HD Preferred Device Power MOSFET 2 Amps, 30 Volts P−Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed


    Original     		PDF MTSF2P03HD r14525 MTSF2P03HD/D mosfet transistor 800 volts.200 amperes

    MTSF2P03HD

    Abstract: AN569 MTSF2P03HDR2 SMD310
    Text: MTSF2P03HD Preferred Device Power MOSFET 2 Amps, 30 Volts P–Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed


    Original     		PDF MTSF2P03HD r14525 MTSF2P03HD/D MTSF2P03HD AN569 MTSF2P03HDR2 SMD310

    Untitled

    Abstract: No abstract text available
    Text: MMDF2C03HD Preferred Device Power MOSFET 2 Amps, 30 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMDF2C03HD r14525 MMDF2C03HD/D

    ASA28XXD

    Abstract: 600 volts step up to 800 volts 500 watt power circuit diagram flyback
    Text: PD - 94540 ASA28XXD SERIES 28V Input, Dual Output ADVANCED ANALOG HIGH RELIABILITY HYBRID DC/DC CONVERTERS Description The ASA28XXD Series of DC/DC converters are high reliability thick film hybrid converters that use flyback topology operating at a nominal frequency of 550Khz.


    Original     		PDF ASA28XXD 550Khz. MIL-STD-704 600 volts step up to 800 volts 500 watt power circuit diagram flyback

    5962-9213901HXC interpoint

    Abstract: MHF 2805s MHF2815 5962-9213901HXC
    Text: in erpoint MHF+ MHF+ S er ie s DC/DC C onverters Up to 15 watts output power G eneral D e s c r ip t io n The MHF+ Series of high frequency DC/DC converters offers a wide input voltage range of 16 to 40 volts and up to 15 watts of output power. The units are capable of withstanding


    OCR Scan     		PDF 2828S 5962-9213901HXC interpoint MHF 2805s MHF2815 5962-9213901HXC