6.110 SIC Search Results

6.110 SIC Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1ZMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TRS8E65H		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L
TRS10E65H		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L
TRS6E65H		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L

6.110 SIC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ceag ghg 418 Abstract: ceag ghg ceag ghg atex CEAG stop start PTB 99 ATEX 1034 R0056 99ATEX R0084 Text: Z O N E 1 Z O N E 2 E X - C O N T R O L Z O N E 21 U N I T S A N D Z O N E 22 C O N T R O L S T A T I O N S Mini-control switch E X - C O N T R O L A N D S I G N A L I Mini-control switch I Te c h n i c a l d a t a M i n i - c o n t ro l s w i t c h , f o r p a n e l m o u n t i n g t y p e 4 1 8 8 1 9 0	Original	94/9/EC R0056 R0039 R0084 ceag ghg 418 ceag ghg ceag ghg atex CEAG stop start PTB 99 ATEX 1034 R0056 99ATEX R0084	PDF
127324 Abstract: CRF-24010-101 42676 Cree Microwave 121-985 br 354 428 Ts 537 744 231 091 CRF-24010 CRF-24010-001 Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation	Original	CRF-24010-001 CRF-24010-101 CRF-24010 127324 CRF-24010-101 42676 Cree Microwave 121-985 br 354 428 Ts 537 744 231 091 CRF-24010-001	PDF
127324 Abstract: CRF-24010 CRF-24010-001 CRF-24010-101 2400G Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 Pill CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage	Original	CRF-24010-001 CRF-24010-101 CRF-24010 127324 CRF-24010-001 CRF-24010-101 2400G	PDF
127324 Abstract: No abstract text available Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation	Original	CRF-24010-001 CRF-24010-101 CRF-24010 127324	PDF
Cree Microwave Abstract: CRF-24010 CRF-24010-001 CRF-24010-101 Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 Pill CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage	Original	CRF-24010-001 CRF-24010-101 CRF-24010 Cree Microwave CRF-24010-001 CRF-24010-101	PDF
Untitled Abstract: No abstract text available Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 Pill CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage	Original	CRF-24010-001 CRF-24010-101 CRF-24010	PDF
CRF-24010-101 Abstract: CRF-24010 CRF-24010-001 88933 42676 Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 Pill CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage	Original	CRF-24010-001 CRF-24010-101 CRF-24010 CRF-24010-101 CRF-24010-001 88933 42676	PDF
ATC1206 Abstract: AVX08051C222MAT2A CRF24010 JESD22-A114 CRF24010F HI1206 DSA00291593.txt Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	CRF24010 CRF24010 CRF240 F24010F ATC1206 AVX08051C222MAT2A JESD22-A114 CRF24010F HI1206 DSA00291593.txt	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	CRF24010 CRF24010 CRF240 F24010F	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	CRF24010 CRF24010 CRF240 F24010F	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	CRF24010 CRF24010 CRF240 F24010F	PDF
CRF24010F Abstract: 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN CRF24010 127324 Text: CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher	Original	CRF24010 CRF24010 CRF240 F24010F CRF24010F 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN 127324	PDF
40.61.7 Abstract: relais bistabil 1N4007 bistabil 95.83.30 bistabil 6 Wechsler 401170 Text: Serie 40 - Steck-/Print-Relais 8 - 10 - 16 A 40.31 40.51 40.52 - Spulen für AC, DC, DC sensitiv 500 mW oder bistabil mit einer Spule - Sichere Trennung nach VDE 0160 / EN 50178 und VDE 0700 / EN 60335 zwischen Spule und Kontaktsatz - 6 kV 1,2/50 µs , 8 mm Luft- und Kriechstrecke	Original		PDF
ceag ghg 122 3121 Abstract: ceag ghg 534 ceag ghg 534 2506 crouse-hinds GHG 960 663 B0708 CEAG PTB 00 ATEX 3108 ceag ghg 412 ceag ghg 543 ceag GHG 543 2306 Ex-92 Text: C A T A L O G U E E X P L O S I O N P R O T E C T E D 3 1 0 P R O D U C T S The CEAG Sicherheitstechnik GmbH factory in Eberbach, Germany The CEAG Nortem SA Barcelona, Spain The factory in Sheerness, UK CEAG SICHERHEITSTECHNIK GMBH Essentials, Innovations and a few words about your money	Original	ambitious531 03/SL D-69412 ceag ghg 122 3121 ceag ghg 534 ceag ghg 534 2506 crouse-hinds GHG 960 663 B0708 CEAG PTB 00 ATEX 3108 ceag ghg 412 ceag ghg 543 ceag GHG 543 2306 Ex-92	PDF

ecg semiconductors master replacement guide Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor Text: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei	Original		PDF
schema de branchement top 243 y Abstract: GTDM120A 350w schematic diagram dc motor control schematic diagram 415VAC to 24VDC POWER SUPPLY su kam pic GUVT120 interposing CT GG10S GSTR024D gw 6203 Text: GE Energy Industrial Solutions DEH-41 358 EntelliGuard G Power Circuit Breaker Disjoncteur de Puissance Open Vermogenschakelaar Installation, Operation and Maintenance Manual Manuel d'installation, d'opération et de maintenance Installatie-, Gebruikers- en Onderhoudshandleiding	Original	DEH-41 NL-7482 D-24534 F-95958 B-9000 schema de branchement top 243 y GTDM120A 350w schematic diagram dc motor control schematic diagram 415VAC to 24VDC POWER SUPPLY su kam pic GUVT120 interposing CT GG10S GSTR024D gw 6203	PDF
THERMISTORS nsp 037 Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032 Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.	OCR Scan	200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032	PDF