"digital phase shifter"
Abstract: 160 e7 mmic e3 mmic s5 MAPCGM0004-DIE P180 macom phase shifter
Text: RO-P-DS-3051 - - MAPCGM0004-DIE 5-Bit Digital Phase Shifter 6.0-18.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ ♦ 6.0-18.0 GHz GaAs MMIC Phase 5 Bit Digital Phase Shifter 6.0 -18.0 GHz Operation 360º Coverage, LSB = 11.2º TTL Control Inputs Self-Aligned MSAG MESFET Process
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RO-P-DS-3051
MAPCGM0004-DIE
MAPCGM0004-Die
"digital phase shifter"
160 e7
mmic e3
mmic s5
P180
macom
phase shifter
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P11P25
Abstract: MAPCGM0004-DIE AN3016 P180
Text: MAPCGM0004-DIE Phase Shifter, 5-Bit Digital 6.0—18.0 GHz M/A-COM Products Preliminary: Rev A Features ♦ ♦ ♦ ♦ ♦ ♦ 5 Bit Digital Phase Shifter 6.0 -18.0 GHz Operation 360º Coverage, LSB = 11.2º TTL Control Inputs MSAG Process RoHS Compliant
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MAPCGM0004-DIE
MAPCGM0004-DIE
P11P25
AN3016
P180
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12 volts 50 watt amplifier schematic diagram
Abstract: CuMoCu copper bond wire
Text: iTR61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC Description Features The iTR61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility Transistor PHEMT
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iTR61810
iTR61810
600mA
12 volts 50 watt amplifier schematic diagram
CuMoCu
copper bond wire
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9452
Abstract: RAYTHEON RMPA61800 amplifier TRANSISTOR 12 GHZ
Text: RMPA61800 Dual-Channel 6-18 GHz 2W MMIC Power Amplifier The Raytheon RMPA61800 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to
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RMPA61800
RMPA61800
600mA
9452
RAYTHEON
amplifier TRANSISTOR 12 GHZ
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Untitled
Abstract: No abstract text available
Text: HMC141 / HMC142 v02.0504 GaAs MMIC DOUBLE-BALANCED MIXER, 6.0 - 18.0 GHz Typical Applications Features The HMC141 & HMC142 is ideal for: Input IP3: +21 dBm • UNII & HiperLAN LO / RF Isolation: 25 to 40 dB • Microwave & MMW Radios IF Bandwidth: DC to 6 GHz
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HMC141
HMC142
HMC141
HMC142
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25uF capacitor
Abstract: CuMoCu rmpa61810 copper bond wire
Text: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC General Description Features The Fairchild Semiconductor RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility Transistor PHEMT
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RMPA61810
RMPA61810
31dBm
25uF capacitor
CuMoCu
copper bond wire
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power amplifier mmic
Abstract: No abstract text available
Text: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRODUCT INFORMATION Description Features The Fairchild Semiconductor RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility
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RMPA61810
RMPA61810
power amplifier mmic
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RF TRANSISTOR 1.5 GHZ dual gate
Abstract: RMPA61800 CuMoCu
Text: RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT
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RMPA61800
RMPA61800
RF TRANSISTOR 1.5 GHZ dual gate
CuMoCu
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circuit diagram of 4 channel long range RF based
Abstract: circuit diagram of 8 channel long range RF based raytheon gaas 6.0-18.0 GHz mmic RAYTHEON rmpa61810 copper bond wire
Text: RF Components RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRODUCT INFORMATION Description Features The Raytheon RF Components RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility
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RMPA61810
RMPA61810
600mA
circuit diagram of 4 channel long range RF based
circuit diagram of 8 channel long range RF based
raytheon gaas
6.0-18.0 GHz mmic
RAYTHEON
copper bond wire
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Untitled
Abstract: No abstract text available
Text: HMC141 / HMC142 v02.0504 GaAs MMIC DOUBLE-BALANCED MIXER, 6.0 - 18.0 GHz MIXERS - CHIP 3 Typical Applications Features The HMC141 & HMC142 is ideal for: Input IP3: +21 dBm • UNII & HiperLAN LO / RF Isolation: 25 to 40 dB • Microwave & MMW Radios IF Bandwidth: DC to 6 GHz
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HMC141
HMC142
HMC141
HMC142
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25 uF capacitor
Abstract: RAYTHEON RMPA61800
Text: RMPA61800 Dual-Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT
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RMPA61800
RMPA61800
25 uF capacitor
RAYTHEON
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RAYTHEON
Abstract: Raytheon Company RMPA61810 2 watt rf transistor
Text: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize
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RMPA61810
RMPA61810
RAYTHEON
Raytheon Company
2 watt rf transistor
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RAYTHEON
Abstract: RMPA61810 25 uF capacitor
Text: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRODUCT INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize
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RMPA61810
RMPA61810
600mA
RAYTHEON
25 uF capacitor
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4511 bd
Abstract: sc 6038
Text: CGB7006-SC -BD Advanced Product Information June 2004 V1.0 (1 of 7) 0.1 GHz to 6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier Features ❏ 33.5 dBm Output IP3 @ 850 MHz ❏ 4.1 dB Noise Figure @ 850 MHz ❏ 15.2 dB Gain @ 850 MHz ❏ 18.0 dBm P1dB @ 850 MHz
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CGB7006-SC
OT-89
4511 bd
sc 6038
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hmc441 amplifier
Abstract: HMC441
Text: MICROWAVE CORPORATION HMC441 v02.0304 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC441 is ideal for use as a medium power amplifier for: Gain: 15.5 dB • Point-to-Point Radios • Point-to-Multi-Point Radios
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HMC441
HMC441
025mm
hmc441 amplifier
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Untitled
Abstract: No abstract text available
Text: MICROWAVE CORPORATION HMC441 v00.0502 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC441 is ideal for use as a medium power amplifier for: Gain: 15.5 dB • Point-to-Point Radios • Point-to-Multi-Point Radios
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HMC441
HMC441
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Untitled
Abstract: No abstract text available
Text: HMC441 v03.0306 AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz Typical Applications Features The HMC441 is ideal for use as a medium power amplifier for: Gain: 15.5 dB • Point-to-Point and Point-to-Multi-Point Radios • VSAT
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HMC441
HMC441
025mm
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HMC441
Abstract: No abstract text available
Text: HMC441 v04.0606 AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz Typical Applications Features The HMC441 is ideal for use as a medium power amplifier for: Gain: 15.5 dB • Point-to-Point and Point-to-Multi-Point Radios • VSAT
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HMC441
HMC441
025mm
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Untitled
Abstract: No abstract text available
Text: MICROWAVE CORPORATION HMC441 v00.0502 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC441 is ideal for use as a medium power amplifier for: Gain: 15.5 dB • Point-to-Point Radios • Point-to-Multi-Point Radios
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HMC441
HMC441
025mm
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Untitled
Abstract: No abstract text available
Text: MICROWAVE CORPORATION HMC441 v00.0502 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC441 is ideal for use as a medium power amplifier for: Gain: 15.5 dB • Point-to-Point Radios • Point-to-Multi-Point Radios
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HMC441
HMC441
025mm
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CGB7006-BD
Abstract: CGB7006-BD-000V DM6030HK TS3332LD
Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 02-Apr-07 CGB7006-BD Features Chip Layout 33.5 dBm Output IP3 @ 850 MHz 4.1 dB Noise Figure @ 850 MHz 15.2 dB Gain @ 850 MHz 18.0 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature
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02-Apr-07
CGB7006-BD
CGB7006-BD
CGB7006-BD-000V
CGB7006-BD-000V
DM6030HK
TS3332LD
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Untitled
Abstract: No abstract text available
Text: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN December 2006 - Rev 11-Dec-06 D1005-QT Features Ultra Wide Band Driver Amplifier Self Biased Architecture 18.0 dB Small Signal Gain 6.0 dB Noise Figure RoHS Compliant SMD, 3x3 mm QFN Package 100% RF, DC, and Output Power Testing
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11-Dec-06
D1005-QT
XD1005-QT
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RF TRANSISTOR 1.5 GHZ dual gate
Abstract: No abstract text available
Text: Raytheon Electronics RMPA61800 Dual-Channel 6-18 GHz 2W MMIC Power Amplifier Description Features Electrical Characteristics Single Channel The Raytheon RMPA61800 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron
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RMPA61800
RMPA61800
RF TRANSISTOR 1.5 GHZ dual gate
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Untitled
Abstract: No abstract text available
Text: Raytheon Electronics RMPA61810 Single Channel 6-18 GHz 1W MMIC Power Amplifier Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to
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RMPA61810
RMPA61810
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