On Resistance
Abstract: On Resistance Flatness Total Harmonic Distortion Package AOZ6134DI
Text: AOZ6134 High Performance, Low RON, 1 SPDT Analog Switch General Description Features The AOZ6134 is a high performance single-pole double-throw SPDT , low power, TTL-compatible bus switch. DFN 1.2 mm x 1.0 mm x 0.55 mm 6-Lead Package The AOZ6134 will accept analog and digital signals.
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AOZ6134
AOZ6134
On Resistance
On Resistance Flatness
Total Harmonic Distortion
Package
AOZ6134DI
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Untitled
Abstract: No abstract text available
Text: AOZ6134 High Performance, Low RON, 1 SPDT Analog Switch General Description Features The AOZ6134 is a high performance single-pole double-throw SPDT , low power, TTL-compatible bus switch. DFN 1.2 mm x 1.0 mm x 0.55 mm 6-Lead Package The AOZ6134 will accept analog and digital signals.
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AOZ6134
AOZ6134
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alpha date code System
Abstract: AOZ8002DIL
Text: AOZ8002 PRELIMINARY Package Dimensions, DFN 1.6mm x 1.6mm D1 D e b 6 E E1 L 1 TOP VIEW R Pin 1 ID e1 Pin 1 ID BOTTOM VIEW Dimensions in millimeters Symbols A A1 b c D D1 E E1 e e1 L R A A1 SIDE VIEW c Min. 0.50 0.00 0.22 Nom. Max. 0.55 0.60 0.02 0.05 0.25
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AOZ8002
5M-1994.
AOZ8002DIL
alpha date code System
AOZ8002DIL
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Untitled
Abstract: No abstract text available
Text: *10*17240 TOSHIBA 002ÔÔ0Ô IS I TC55257DPI/DFI/DFn-70L/-$5L PRELIMINARY SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description T h e T C 5 5 2 5 7 D P I is a 2 6 2 ,1 4 4 bit s ta tic ra n d o m a c c e s s m e m o ry organize d as 3 2 ,7 6 8 w o rd s b y 8 b its using C M O S te c h
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TC55257DPI/DFI/DFn-70L/-
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Untitled
Abstract: No abstract text available
Text: AOZ8131 Ultra Low Capacitance One-Line Bi-directional TVS Diode General Description Features The AOZ8131 is an ultra low capacitance one-line bi-directional transient voltage suppressor diode designed to protect high speed data lines and voltage sensitive electronics from high transient conditions and
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AOZ8131
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Text: AOZ8811 Ultra-Low Capacitance One-line TVS Diode General Description Features The AOZ8811 is a ultra-low capacitance one-line transient voltage suppressor diode designed to protect very high-speed data lines and voltage sensitive electronics from high transient conditions and ESD.
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AOZ8811
AOZ8811
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Text: AOZ8831 Ultra Low Capacitance One-line Bi-directional TVS Diode General Description Features The AOZ8831 is an ultra low capacitance one-line bi-directional transient voltage suppressor diode designed to protect high speed data lines and voltage sensitive electronics from high transient conditions and
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AOZ8831
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5A/M39029/AOZ8231A
Abstract: No abstract text available
Text: AOZ8231A One-line Bi-directional TVS Diode General Description Features The AOZ8231A is a one-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. ESD protection for high-speed data lines
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AOZ8231A
AOZ8231A
5A/M39029/AOZ8231A
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Untitled
Abstract: No abstract text available
Text: AOZ8222DI-05 Two-line TVS Diode General Description Features The AOZ8222DI-05 is a two-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. ESD protection for high-speed data lines:
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AOZ8222DI-05
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Text: AOZ8222DI-05 Two-line TVS Diode General Description Features The AOZ8222DI-05 is a two-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. z ESD protection for high-speed data lines:
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Text: AOZ8841 Ultra Low Capacitance One-line Bidirectional TVS Diode General Description Features The AOZ8841 is an ultra low capacitance one-line bidirectional transient voltage suppressor diode designed to protect high speed data lines and voltage sensitive electronics from high transient conditions and ESD.
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AOZ8841
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Text: AOZ8222DI-05 Two-line TVS Diode General Description Features The AOZ8222DI-05 is a two-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. ESD protection for high-speed data lines:
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Text: AOZ8131 Ultra Low Capacitance One-line Bi-directional TVS Diode General Description Features The AOZ8131 is an ultra low capacitance one-line bi-directional transient voltage suppressor diode designed to protect high speed data lines and voltage sensitive electronics from high transient conditions and
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AOZ8131
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Untitled
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Text: AOZ8204DI Four-line TVS Diode Array General Description Features The AOZ8204 is a transient voltage suppressor diode array designed to protect data lines from high transient conditions and ESD. This state-of-the-art device utilizes AOS leading edge Trench Vertical Structure [TVS]2
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AOZ8204
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Text: AOZ8231A One-line Bi-directional TVS Diode General Description Features The AOZ8231A is a one-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. ESD protection for high-speed data lines
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AOZ8231A
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Text: AOZ8204DI Four-line TVS Diode Array General Description Features The AOZ8204 is a transient voltage suppressor diode array designed to protect data lines from high transient conditions and ESD. This state-of-the-art device utilizes AOS leading edge Trench Vertical Structure [TVS]2
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AOZ8204
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AOZ8211DI-05
Abstract: AOS date code System alpha date code System
Text: AOZ8211 0ne-line TVS Diode General Description Features The AOZ8211 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. z ESD protection for high-speed data lines: This device incorporates one TVS diode in an ultra-small
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AOZ8211
AOZ8211DI-05
AOS date code System
alpha date code System
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AOZ8131DI-05L
Abstract: AOZ8131DI05L
Text: AOZ8131 Ultra Low Capacitance One-line Bi-directional TVS Diode General Description Features The AOZ8131 is an ultra low capacitance one-line bi-directional transient voltage suppressor diode designed to protect high speed data lines and voltage sensitive electronics from high transient conditions and
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AOZ8131
AOZ8131DI-05L
AOZ8131DI05L
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AOZ8131NI-05L
Abstract: AOZ8131D AOZ8131DI-05L alpha date code System AOS date code System
Text: AOZ8131 Ultra Low Capacitance One-line Bi-directional TVS Diode General Description Features The AOZ8131 is an ultra low capacitance one-line bi-directional transient voltage suppressor diode designed to protect high speed data lines and voltage sensitive electronics from high transient conditions and
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AOZ8131
AOZ8131
AOZ8131NI-05L
AOZ8131D
AOZ8131DI-05L
alpha date code System
AOS date code System
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Untitled
Abstract: No abstract text available
Text: AOZ8205DI Five-line TVS Diode Array General Description Features The AOZ8205 is a transient voltage suppressor TVS diode array designed to protect data lines from high transient conditions and ESD. This state-of-the-art device utilizes AOS leading edge Trench Vertical Structure
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Text: AOZ8001DI Ultra-Low Capacitance TVS Diode Array General Description Features The AOZ8001DI is a transient voltage suppressor array designed to protect high speed data lines from ESD and lightning. This device incorporates four surge rated, low capacitance
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AOZ8001DI
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AOZ8204DI
Abstract: No abstract text available
Text: AOZ8204DI Four-line TVS Diode Array General Description Features The AOZ8204 is a transient voltage suppressor diode array designed to protect data lines from high transient conditions and ESD. This state-of-the-art device utilizes AOS leading edge Trench Vertical Structure [TVS]2
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AOZ8204DI
AOZ8204
AOZ8204DI
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AOZ8205DI Five-line TVS Diode Array General Description Features The AOZ8205 is a transient voltage suppressor TVS diode array designed to protect data lines from high transient conditions and ESD. This state-of-the-art device utilizes AOS leading edge Trench Vertical Structure
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AOZ8205
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Untitled
Abstract: No abstract text available
Text: AOZ8211 0ne-line TVS Diode General Description Features The AOZ8211 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. This device incorporates one TVS diode in an ultra-small
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