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    6 21 X2 MARKING CODE SOT 323 Search Results

    6 21 X2 MARKING CODE SOT 323 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    6 21 X2 MARKING CODE SOT 323 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    2n1613 equivalent

    Abstract: BC237 diode l 0607
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection


    Original     		PDF SC-70/SOT-323 BAV99WT1 BAV99LT1. BAV99RWT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2n1613 equivalent BC237 diode l 0607

    DELTA fan bfb

    Abstract: BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Amplifier Transistor MPSH81 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


    Original     		PDF MPSH81 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 DELTA fan bfb BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS

    BF245 application note

    Abstract: transistor BF245 2n4036 equivalent BC237 H.P. Part Numbers to JEDEC Numbers 2N4036 2N3819 Application Note BF245 TRANSISTOR SOT-363 X3 SOT 363 marking CODE m4 6 21 X2 marking code sot 363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBD110DWT1 MBD330DWT1 MBD770DWT1 Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies


    Original     		PDF MBD110DWT1 MBD330DWT1 MBD770DWT1 SO218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BF245 application note transistor BF245 2n4036 equivalent BC237 H.P. Part Numbers to JEDEC Numbers 2N4036 2N3819 Application Note BF245 TRANSISTOR SOT-363 X3 SOT 363 marking CODE m4 6 21 X2 marking code sot 363

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


    Original     		PDF MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


    Original     		PDF MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


    Original     		PDF MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    diode l 0607

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.


    Original     		PDF M1MA141/2KT1 inch/3000 M1MA141/2KT3 inch/10 M1MA141KT1 M1MA142KT1 70/SOT M1MA142KT1 MSC1621T1 diode l 0607 BC237

    BC237

    Abstract: 16 pin dip with heat sink
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode M1MA141WAT1 M1MA142WAT1 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which


    Original     		PDF M1MA141/2WAT1 inch/3000 M1MA141/2WAT3 inch/10 M1MA141WAT1 M1MA142WAT1 70/SOT M1MA142WAT218A MSC1621T1 BC237 16 pin dip with heat sink

    BC237

    Abstract: 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,


    Original     		PDF BSS138LT1 OT-23 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet

    BC237

    Abstract: 2N3019 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN General Purpose Amplifier Transistors Surface Mount MSD601-RT1* MSD601-ST1 COLLECTOR 3 2 BASE MAXIMUM RATINGS TA = 25°C 3 1 EMITTER 2 1 Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage


    Original     		PDF MSD601-RT1 MSD601-ST1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 2N3019 MOTOROLA

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP General Purpose Amplifier Transistor Surface Mount MSB709-RT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO – 60


    Original     		PDF MSB709-RT1 m218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


    Original     		PDF MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Low Voltage Output Amplifier Surface Mount MSD1328-RT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 25 Vdc Collector–Emitter Voltage


    Original     		PDF MSD1328-RT1 Colle218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    marking SC59 Transistor

    Abstract: BC237 self adhesive label 2N5670 equivalent M1MA151 marking jc 216 sc
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diodes M1MA151WKT1 M1MA152WKT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59


    Original     		PDF M1MA151/2WKT1 inch/3000 M1MA151/2WKT3 inch/10 M1MA151WKT1 M1MA152WKT1 M1218A MSC1621T1 MSC2404 marking SC59 Transistor BC237 self adhesive label 2N5670 equivalent M1MA151 marking jc 216 sc

    BC237

    Abstract: DUAL GENERAL PURPOSE TRANSISTORS marking code D3 SOT23 component marking code mt
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package


    Original     		PDF M1MA141/2WKT1 inch/3000 M1MA141/2WKT3 inch/10 M1MA141WKT1 M1MA142WKT1 70/SOT M1218A MSC1621T1 BC237 DUAL GENERAL PURPOSE TRANSISTORS marking code D3 SOT23 component marking code mt

    marking code J111

    Abstract: BC237 2N2904 bc547 marking transistor BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN General Purpose Amplifier Transistor Surface Mount MSD602-RT1 Motorola Preferred Device COLLECTOR 3 3 2 2 BASE MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage


    Original     		PDF MSD602-RT1 IB218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 marking code J111 BC237 2N2904 bc547 marking transistor BCY72

    BC237

    Abstract: MARKING CODE diode sod123 W1 rlra
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diodes M1MA151WAT1 M1MA152WAT1 These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59


    Original     		PDF M1MA151/2WAT1 inch/3000 M1MA151/2WAT3 inch/10 M1MA151WAT1 M1MA152WAT1 M1MA152WAT218A MSC1621T1 MSC2404 BC237 MARKING CODE diode sod123 W1 rlra

    BC237

    Abstract: 6 21 X2 marking code sot 323
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.


    Original     		PDF M1MA151/2AT1 inch/3000 M1MA151/2AT3 inch/10 M1MA151AT1 M1MA152AT1 M1MA152AT1 MSC1621T1 MSC2404 BC237 6 21 X2 marking code sot 323

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s


    Original     		PDF MMBF0202PLT1 ENHANCE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    BC237

    Abstract: marking CODE N3 SOT223 marking N3
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE


    Original     		PDF MGSF1N03LT1 Sur218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 marking CODE N3 SOT223 marking N3

    BC237

    Abstract: automatic heat detector project report
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Hot-Carrier Diodes MMBD452LT1 Schottky Barrier Diodes Motorola Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital


    Original     		PDF MMBD452LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 automatic heat detector project report

    code marking 6z sot-23

    Abstract: BC237 H2A transistor BF245 6z sot223 marking MMBV2104 j112 fet BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor MMBF170LT1 DRAIN 3 N–Channel  1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage — Continuous


    Original     		PDF MMBF170LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 code marking 6z sot-23 BC237 H2A transistor BF245 6z sot223 marking MMBV2104 j112 fet BCY72

    j305 replacement

    Abstract: BC237 mps2907 replacement BC109C replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical


    Original     		PDF MMBV3102LT1 236AB) t218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 j305 replacement BC237 mps2907 replacement BC109C replacement