45N28
Abstract: 5STP45N2200
Text: Key Parameters VDSM = 2800 ITAVM = 4950 ITRMS = 7770 ITSM = 75000 VT0 = 0.86 rT = 0.070 V A A A V mΩ Phase Control Thyristor 5STP 45N2800 Doc. No. 5SYA 1007-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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45N2800
45N2800
45N2600
45N2200
67xVDRM
CH-5600
45N28
5STP45N2200
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45N2800
Abstract: 5STP45N2800 5STP 45N2200
Text: VDSM = 2800 V ITAVM = 5080 A ITRMS = 7970 A ITSM = 75000 A VT0 = 0.86 V rT = 0.070 mΩ Phase Control Thyristor 5STP 45N2800 Doc. No. 5SYA1007-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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Original
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PDF
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5SYA1007-03
45N2800
45N2800
45N2600
45N2200
67xVDRM
CH-5600
5STP45N2800
5STP 45N2200
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5STP45N2800
Abstract: ABB thyristor 5 ka 75000 45N2800
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 5080 A 7970 A 75000 A 0.86 V 0.070 mΩ Ω Phase Control Thyristor 5STP 45N2800 Doc. No. 5SYA1007-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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Original
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PDF
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45N2800
5SYA1007-03
45N2800
45N2600
45N2200
CH-5600
5STP45N2800
ABB thyristor 5
ka 75000
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5STP45N2600
Abstract: 45N2800
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 5080 A 7970 A 75000 A 0.86 V 0.07 mΩ Ω Phase Control Thyristor 5STP 45N2800 Doc. No. 5SYA1007-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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Original
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PDF
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45N2800
5SYA1007-03
45N2800
45N2600
45N2200
CH-5600
5STP45N2600
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