Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 2800 7385 11600 87x103 0.8 0.05 Rectifier Diode V A A A V 5SDD 60Q2800 mW Doc. No. 5SYA1161-02 April 13 • Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability
|
Original
|
PDF
|
60Q2800
5SYA1161-02
CH-5600
|
5sya2020
Abstract: 5SDD40H4000
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 3930 6170 46x103 0.885 0.135 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-01 Okt. 08 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1
|
Original
|
PDF
|
40H4000
5SYA1176-01
CH-5600
5sya2020
5SDD40H4000
|
diode vrrm 8000 if 7000
Abstract: 5SDD31H6000
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 6000 3246 5099 40x103 0.894 0.166 Rectifier Diode V A A A V mΩ 5SDD 31H6000 Doc. No. 5SYA1183-02 May 09 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values 1) Parameter
|
Original
|
PDF
|
31H6000
5SYA1183-02
CH-5600
diode vrrm 8000 if 7000
5SDD31H6000
|
60N2800
Abstract: 5SDD60N2800
Text: + VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 2800 6830 10730 87x103 0.8 0.05 Rectifier Diode V A A A V mΩ 5SDD 60N2800 Doc. No. 5SYA1155-01 Jan. 05 • Patented free-floating silicon technology • Very low on-state losses • Optimum power handling capability
|
Original
|
PDF
|
60N2800
5SYA1155-01
CH-5600
60N2800
5SDD60N2800
|
Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5500 3480 5470 46x103 0.94 0.147 Rectifier Diode V A A A V 5SDD 33L5500 mW Doc. No. 5SYA1168-01 Apr 13 • Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability
|
Original
|
PDF
|
33L5500
5SYA1168-01
CH-5600
|
Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45x103 0.903 0.136 Rectifier Diode V A A A V mΩ 5SDD 38H5000 Doc. No. 5SYA1177-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1
|
Original
|
PDF
|
38H5000
5SYA1177-00
CH-5600
|
ABB VS 4000
Abstract: 5sya2020
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45x103 0.903 0.136 Rectifier Diode V A A A V mΩ 5SDD 38H5000 Doc. No. 5SYA1177-00 Feb. 06 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1
|
Original
|
PDF
|
38H5000
5SYA1177-00
CH-5600
ABB VS 4000
5sya2020
|
50N5500
Abstract: A150 B150 C150 D150 VF150 VF25
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5500 4700 7390 73x103 0.8 0.107 Rectifier Diode V A A A V mW 5SDD 50N5500 Doc. No. 5SYA1169-00 Sep. 04 • Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability
|
Original
|
PDF
|
50N5500
5SYA1169-00
CH-5600
50N5500
A150
B150
C150
D150
VF150
VF25
|
tc 106-10
Abstract: 5SDD 33L5500 A150 B150 C150 D150 VF150 VF25
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5500 3480 5470 46x103 0.94 0.147 Rectifier Diode V A A A V mΩ 5SDD 33L5500 Doc. No. 5SYA1168-00 March 05 • Patented free-floating silicon technology • Very low on-state losses • Optimum power handling capability
|
Original
|
PDF
|
33L5500
5SYA1168-00
CH-5600
tc 106-10
5SDD 33L5500
A150
B150
C150
D150
VF150
VF25
|
11-2510
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 3000 1285 2019 15x103 0.933 0.242 Rectifier Diode V A A A V mΩ Ω 5SDD 11D2800 Doc. No. 5SYA1166-00 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1)
|
Original
|
PDF
|
11D2800
5SYA1166-00
CH-5600
11-2510
|
ABB VS 4000
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 4140 6500 46x103 0.905 0.109 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-00 March 05 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter
|
Original
|
PDF
|
40H4000
5SYA1176-00
CH-5600
ABB VS 4000
|
Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 4140 6500 46x103 0.905 0.109 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-00 Sept. 07 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1
|
Original
|
PDF
|
40H4000
5SYA1176-00
CH-5600
|
diode 3106
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5200 1978 3106 24x103 0.94 0.284 Rectifier Diode V A A A V mΩ 5SDD 20F5000 Doc. No. 5SYA1162-01 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter
|
Original
|
PDF
|
20F5000
5SYA1162-01
CH-5600
diode 3106
|
Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 2800 6830 10730 87x103 0.8 0.05 Rectifier Diode V A A A V mΩ 5SDD 60N2800 Doc. No. 5SYA1155-01 Jan. 05 • Patented free-floating silicon technology • Very low on-state losses • Optimum power handling capability
|
Original
|
PDF
|
60N2800
5SYA1155-01
CH-5600
|
|
|
Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = Rectifier Diode 5500 V 4570 A 7180 A 73•103 A 0.8 V 0.107 m 5SDD 50N5500 Doc. No. 5SYA1169-01 Apr. 13 • Patented free-floating silicon technology Low on-state and switching losses Optimum power handling capability
|
Original
|
PDF
|
50N5500
5SYA1169-01
CH-5600
|
5SDD31H6000
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 6000 3080 4840 40x103 1.016 0.175 Rectifier Diode V A A A V mΩ 5SDD 31H6000 PRELIMINARY Doc. No. 5SYA1183-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1
|
Original
|
PDF
|
31H6000
5SYA1183-00
CH-5600
5SDD31H6000
|
Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 3200 4700 7390 61x103 0.992 0.067 Rectifier Diode V A A A V mΩ 5SDD 48H3200 Doc. No. 5SYA1182-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1
|
Original
|
PDF
|
48H3200
5SYA1182-00
CH-5600
|
Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 3000 1285 2019 15x103 0.933 0.242 Rectifier Diode V A A A V mΩ 5SDD 11D2800 Doc. No. 5SYA1166-00 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter
|
Original
|
PDF
|
11D2800
5SYA1166-00
CH-5600
|
Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5200 1978 3106 24x103 0.94 0.284 Rectifier Diode V A A A V mΩ Ω 5SDD 20F5000 Doc. No. 5SYA1162-01 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1)
|
Original
|
PDF
|
20F5000
5SYA1162-01
CH-5600
|
71B0200
Abstract: No abstract text available
Text: VRRM = 200 V IFAVM = 7110 A IFRMS = 11200 A IFSM = 55000 A VF0 = 0.74 V rF = 0.026 mΩ Rectifier Diode 5SDD 71B0200 Doc. No. 5SYA1132-02 July 06 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking
|
Original
|
PDF
|
71B0200
5SYA1132-02
CH-5600
71B0200
|
71B0200
Abstract: No abstract text available
Text: VRRM = 200 V IFAVM = 7110 A IFRMS = 11200 A IFSM = 55000 A VF0 = 0.74 V rF = 0.026 mΩ Rectifier Diode 5SDD 71B0200 Doc. No. 5SYA1122-02 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking
|
Original
|
PDF
|
71B0200
5SYA1122-02
creepag200
CH-5600
71B0200
|
17300A
Abstract: No abstract text available
Text: VRRM = 200 V IFAVM = 11000 A IFRMS = 17300 A IFSM = 85000 A VF0 = 0.75 V rF = 0.020 mΩ Ω Rectifier Diode 5SDD 0120C0200 Doc. No. 5SYA1157-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance
|
Original
|
PDF
|
0120C0200
5SYA1157-01
Surfac200
CH-5600
17300A
|
Untitled
Abstract: No abstract text available
Text: VRRM = 200 V IFAVM = 6130 A IFRMS = 9620 A IFSM = 45000 A VF0 = 0.80 V rF = 0.030 mΩ Rectifier Diode 5SDD 40B0200 Doc. No. 5SYA1154-02 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking
|
Original
|
PDF
|
40B0200
5SYA1154-02
creepage0200
CH-5600
|
Untitled
Abstract: No abstract text available
Text: 5SDD 0135Z0401 5SDD 0135Z0401 Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications Welding equipment High current application up to 2 kHz Key Parameters = 400 V RRM = 13 526
|
Original
|
PDF
|
0135Z0401
1768/138a,
DS/317/12b
Jan-14
|
