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    5R350P TRANSISTOR Search Results

    5R350P TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    5R350P TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IPP50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


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    PDF IPP50R350CP PG-TO220 5R350P

    Untitled

    Abstract: No abstract text available
    Text: IPA50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


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    PDF IPA50R350CP PG-TO220FP 5R350P

    5R350P

    Abstract: IPP50R350CP 5R350P IPP50R350CP JESD22 D56 transistor
    Text: IPP50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


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    PDF IPP50R350CP PG-TO220 5R350P 5R350P IPP50R350CP 5R350P IPP50R350CP JESD22 D56 transistor

    5R350P

    Abstract: D56 transistor 5R350P transistor
    Text: IPP50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge VDS @Tjmax 550 V RDS on ,max 0.350 W 19 nC Qg,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant; Halogen free for mold compound


    Original
    PDF IPP50R350CP PG-TO220 IPP50R350CP PG-TO220 5R350P 5R350P D56 transistor 5R350P transistor

    5R350P

    Abstract: No abstract text available
    Text: IPP50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge VDS @Tjmax 550 V RDS on ,max 0.350 9 19 nC Qg,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant; Halogen free for mold compound


    Original
    PDF IPP50R350CP PG-TO220 5R350P 5R350P

    5R350P

    Abstract: 5R350P transistor IPW50R350CP JESD22
    Text: IPW50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original
    PDF IPW50R350CP O247-3-1 PG-TO247 5R350P 009-134-A O-247 PG-TO247-3 5R350P 5R350P transistor IPW50R350CP JESD22

    5R350P

    Abstract: 5R350P transistor IPI50R350CP JESD22 f56a
    Text: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


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    PDF IPI50R350CP PG-TO262 5R350P 5R350P 5R350P transistor IPI50R350CP JESD22 f56a

    5R350P

    Abstract: IPA50R350CP JESD22 PG-TO220-3-31 5R350P transistor 5r350
    Text: IPA50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


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    PDF IPA50R350CP PG-TO220FP 5R350P 5R350P IPA50R350CP JESD22 PG-TO220-3-31 5R350P transistor 5r350

    5R350P

    Abstract: G309 5R350P transistor IPP50R350CP
    Text: IPP50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original
    PDF IPP50R350CP PG-TO220 IPP50R350CP PG-TO220 5R350P 5R350P G309 5R350P transistor

    5R350P

    Abstract: 5R350P transistor IPW50R350CP JESD22 D56 transistor Hard & soft switching SMPS topologies
    Text: IPW50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original
    PDF IPW50R350CP O247-3-1 PG-TO247 5R350P 5R350P 5R350P transistor IPW50R350CP JESD22 D56 transistor Hard & soft switching SMPS topologies