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    5R350P TRANSISTOR Search Results

    5R350P TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    5R350P TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IPP50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original     		IPP50R350CP PG-TO220 5R350P PDF

    Untitled

    Abstract: No abstract text available
    Text: IPA50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original     		IPA50R350CP PG-TO220FP 5R350P PDF

    5R350P

    Abstract: IPP50R350CP 5R350P IPP50R350CP JESD22 D56 transistor
    Text: IPP50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original     		IPP50R350CP PG-TO220 5R350P 5R350P IPP50R350CP 5R350P IPP50R350CP JESD22 D56 transistor PDF

    5R350P

    Abstract: D56 transistor 5R350P transistor
    Text: IPP50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge VDS @Tjmax 550 V RDS on ,max 0.350 W 19 nC Qg,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant; Halogen free for mold compound


    Original     		IPP50R350CP PG-TO220 IPP50R350CP PG-TO220 5R350P 5R350P D56 transistor 5R350P transistor PDF

    5R350P

    Abstract: No abstract text available
    Text: IPP50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge VDS @Tjmax 550 V RDS on ,max 0.350 9 19 nC Qg,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant; Halogen free for mold compound


    Original     		IPP50R350CP PG-TO220 5R350P 5R350P PDF

    5R350P

    Abstract: 5R350P transistor IPW50R350CP JESD22
    Text: IPW50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original     		IPW50R350CP O247-3-1 PG-TO247 5R350P 009-134-A O-247 PG-TO247-3 5R350P 5R350P transistor IPW50R350CP JESD22 PDF

    5R350P

    Abstract: 5R350P transistor IPI50R350CP JESD22 f56a
    Text: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original     		IPI50R350CP PG-TO262 5R350P 5R350P 5R350P transistor IPI50R350CP JESD22 f56a PDF

    5R350P

    Abstract: IPA50R350CP JESD22 PG-TO220-3-31 5R350P transistor 5r350
    Text: IPA50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original     		IPA50R350CP PG-TO220FP 5R350P 5R350P IPA50R350CP JESD22 PG-TO220-3-31 5R350P transistor 5r350 PDF

    5R350P

    Abstract: G309 5R350P transistor IPP50R350CP
    Text: IPP50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original     		IPP50R350CP PG-TO220 IPP50R350CP PG-TO220 5R350P 5R350P G309 5R350P transistor PDF

    5R350P

    Abstract: 5R350P transistor IPW50R350CP JESD22 D56 transistor Hard & soft switching SMPS topologies
    Text: IPW50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original     		IPW50R350CP O247-3-1 PG-TO247 5R350P 5R350P 5R350P transistor IPW50R350CP JESD22 D56 transistor Hard & soft switching SMPS topologies PDF