phototransistor S351P
Abstract: 8582
Text: TELEFUNKEN Semiconductors S 351 P Silicon NPN Phototransistor Description S351P is a very high sensitive silicon NPN epitaxial planar phototransistor in a low profile ø 5mm T–1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible
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S351P
D-74025
phototransistor S351P
8582
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phototransistor S351P
Abstract: 8239 8582
Text: S351P Silicon NPN Phototransistor Description S351P is a very high sensitive silicon NPN epitaxial planar phototransistor in a low profile ø 5mm T–1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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S351P
S351P
D-74025
15-Jul-96
phototransistor S351P
8239
8582
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Phototransistor 5mm
Abstract: phototransistor blue light PT333 GB-PT333 GB-PT333A21BT GB-PT333A21C GB-PT333A21DB GB-PT333A22BT GB-PT333A22C GB-PT333A22DB
Text: GB-PT333 SERIES Phototransistor 5mm DESCRIPTION: PACKAGE DIMENSIONS The PT333 series consists of a NPN silicon phototransistor encapsulated in blue transparent, dark blue or water clear plastic package. The dark blue plastic package which cuts the visible light is suitable for the detection
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GB-PT333
PT333
100mW
-40oC
-55oC
100oC
940nm
Phototransistor 5mm
phototransistor blue light
GB-PT333A21BT
GB-PT333A21C
GB-PT333A21DB
GB-PT333A22BT
GB-PT333A22C
GB-PT333A22DB
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L51P3C
Abstract: L-51P3C L51P L-53 kingbright
Text: Kingbright T-1 3/4 5mm PHOTOTRANSISTOR L-51P3C Features Package Dimensions lMECHANICALLY AND SPECTRALLY MATCHED TO THE L-53 SERIES INFRARED EMITTING LED LAMP. lWATER CLEAR LENS. Description Made with NPN silicon phototransistor chips. Absolute Maximum Ratings at TA=25°C
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L-51P3C
100uA
940nm
4-L51P-2-2
4-L51P-3
L51P3C
L-51P3C
L51P
L-53 kingbright
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L53P3C
Abstract: L-53P3C kingbright L-53 L-53 kingbright 53P3C
Text: Kingbright T-1 3/4 5mm PHOTOTRANSISTOR L-53P3C Features Package Dimensions lMECHANICALLY AND SPECTRALLY MATCHED TO THE L-53 SERIES INFRARED EMITTING LED LAMP. lWATER CLEAR LENS. Description Made with NPN silicon phototransistor chips. Absolute Maximum Ratings at TA=25°C
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L-53P3C
100uA
940nm
4-L53P-2-2
4-L53P-3
L53P3C
L-53P3C
kingbright L-53
L-53 kingbright
53P3C
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Phototransistor T-1 PT333-3C Features Fast response time High photo sensitivity Pb free This product itself will remain within RoHS compliant version. Descriptions PT333-3C is a high speed and high sensitive NPN silicon NPN epitaxial planar phototransistor molded in a standard 5 mm package.
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PT333-3C
PT333-3C
CDPT-033-008
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phototransistor blue light
Abstract: GB-PT333 GB-PT333A21BT GB-PT333A21C GB-PT333A21DB GB-PT333A22BT GB-PT333A22C GB-PT333A22DB GB-PT333B21BT GB-PT333B21C
Text: GB-PT333 SERIES Globe Technology Component DESCRIPTION: Phototransistor 5mm PACKAGE DIMENSIONS The PT333 series consists of a NPN silicon phototransistor encapsulated in blue transparent, dark blue or water clear plastic package. The dark blue plastic package which cuts the visible light is suitable for the detection
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GB-PT333
PT333
100mW
-40oC
-55oC
100oC
940nm
phototransistor blue light
GB-PT333A21BT
GB-PT333A21C
GB-PT333A21DB
GB-PT333A22BT
GB-PT333A22C
GB-PT333A22DB
GB-PT333B21BT
GB-PT333B21C
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PT331
Abstract: pt331c
Text: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT331C Features ․Fast response time ․High photo sensitivity ․Pb free Descriptions ․PT331C is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5Φ package. Due to is water clear epoxy the device is sensitive
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PT331C
PT331C
NoDPT-033-001
date07-19-2004
PT331
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PT334-6C
Abstract: PT334-6C-27
Text: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT334-6C-27 Features ˙Fast response time ˙High photo sensitivity Descriptions ˙PT334-6C-27 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5Φ package. Due to is water clear epoxy the device is sensitive
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PT334-6C-27
PT334-6C-27
NoDPT-033-136
date02-12-2003
PT334-6C
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pt331c
Abstract: PT331 Phototransistor 5mm 5mm npn phototransistor clear DSA007309
Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DPT-033-001 REV : PAGE : 1.1 1/7 5mm Phototransistor MODEL NO : PT331C Features : Fast response time High photo sensitivity Description : PT331C is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in
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DPT-033-001
PT331C
PT331C
PT331
Phototransistor 5mm
5mm npn phototransistor clear
DSA007309
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PT331C
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT331C Features ․Fast response time ․High photo sensitivity ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions ․PT331C is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5Φ
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PT331C
PT331C
NoDPT-033-001
date07-20-2005
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Untitled
Abstract: No abstract text available
Text: 5mm Phototransistor T-1 3/4 PT334-6C Features ․Fast response time ․High photo sensitivity ․Pb free ․The product itself will remain within RoHS compliant version. Description ․PT334-6C is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5Φ
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PT334-6C
PT334-6C
DPT-0000185
DPT-0000185
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT334-6C Features Fast response time High photo sensitivity Pb free The product itself will remain within RoHS compliant version. Descriptions PT334-6C is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5
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PT334-6C
PT334-6C
DPT-033-059
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PT333-3C
Abstract: PT333 10secs-5mins
Text: Technical Data Sheet 5mm Phototransistor T-1 PT333-3C Features ․Fast response time ․High photo sensitivity ․Pb free ․This product itself will remain within RoHS compliant version. Descriptions ․PT333-3C is a high speed and high sensitive NPN silicon
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PT333-3C
PT333-3C
NoCDPT-033-008
date2005/7/24
PT333
10secs-5mins
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MID-54422
Abstract: No abstract text available
Text: T-1 3/4 PACKAGE NPN PHOTOTRANSISTOR Description MID-54422 Package Dimensions The MID-54422 is a NPN silicon phototransistor mounted ψ5.05 .200 Unit: mm ( inches ) in a lensed, water clear plastic package. The lensing effect of the package allows an acceptance view angle of 40o so
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MID-54422
MID-54422
00MIN.
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L-7113P3C
Abstract: l32p3c L-32P3C L-610MP4BT-BD rise time of phototransistor 3mm npn phototransistor, T-1 phototransistor 940nm Phototransistor 5mm 7113p3 610mp4bt
Text: PHOTOTRANSISTORS L-610MP4BT/BD L-32P3C L-7113P3C PHOTOTRANSISTOR L-610MP4BT/BD NPN BLACK PLASTIC PHOTOTRANSISTOR ELECTRICAL AND RADIANT CHARACTERISTICS T A =25°° C Symbol Parameter Min. Typ. Max. Unit Test Condition VBR CEO Collector-to-Emitter Breakdown Voltage
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L-610MP4BT/BD
L-32P3C
L-7113P3C
940nm
100mW
L-7113P3C
l32p3c
L-610MP4BT-BD
rise time of phototransistor
3mm npn phototransistor, T-1
phototransistor 940nm
Phototransistor 5mm
7113p3
610mp4bt
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Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR L-32P3C Features Description MECHANICALLY AND SPECTRALLY MATCHED TO THE Made with NPN silicon phototransistor chips. L-34 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters inches .
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L-32P3C
AA4192
DEC/23/2004
100uA
20mW/cm2
940nm
100mW
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Untitled
Abstract: No abstract text available
Text: www.eLED.com PHOTOTRANSISTOR Package Dimensions E53P3C Features MECHANICALLY AND SPECTRALLY MATCHED TO THE E53 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. Notes: 1. All dimensions are in millimeters inches . 2. Tolerance is ±0.25(0.01") unless otherwise noted.
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E53P3C
EA0470
AUG/04/2004
E53P3C-
940nm
100mW
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WP32P3C
Abstract: No abstract text available
Text: PHOTOTRANSISTOR WP32P3C Description Features MECHANICALLY AND SPECTRALLY MATCHED TO THE Made with NPN silicon phototransistor chips. W34 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters inches .
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WP32P3C
DSAF0434
FEB/28/2005
940nm
100mW
WP32P3C
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l32p3c
Abstract: No abstract text available
Text: PHOTOTRANSISTOR P/N: L-32P3C Description Features MECHANICALLY AND SPECTRALLY MATCHED TOTHE Made with NPN silicon phototransistor chips. L-34 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters inches .
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L-32P3C
AA4192
NOV/02/2005
100uA
20mW/cm2
940nm
100mW
l32p3c
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L-7113P3C
Abstract: l-7113 7113p3c
Text: PHOTOTRANSISTOR P/N: L-7113P3C Features Description MECHANICALLY AND SPECTRALLY MATCHED TO THE Made with NPN silicon phototransistor chips. L-7113 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters inches .
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L-7113P3C
L-7113
AC9295
NOV/19/2005
940nm
100mW
L-7113P3C
7113p3c
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L-7113P3C
Abstract: 7113p3 infrared 5mm LED 940nm 30
Text: PHOTOTRANSISTOR L-7113P3C Features Description MECHANICALLY AND SPECTRALLY MATCHED TO THE Made with NPN silicon phototransistor chips. L-7113 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters inches .
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L-7113P3C
L-7113
AC9295
DEC/23/2004
100uA
20mW/cm2
940nm
100mW
L-7113P3C
7113p3
infrared 5mm LED 940nm 30
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W7113P3C
Abstract: No abstract text available
Text: PHOTOTRANSISTOR W7113P3C Features Description MECHANICALLY AND SPECTRALLY MATCHED TO THE Made with NPN silicon phototransistor chips. W7113 SERIES INFRARED EMITTING LED LAMP . WATER CLEAR LENS. RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters inches .
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W7113P3C
W7113
AE8714
DEC/20/2004
100uA
20mW/cm2
940nm
100mW
W7113P3C
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phototransistor S351P
Abstract: No abstract text available
Text: Tem ic S351P S e m i c o n d u c t o r s Silicon NPN Phototransistor Description S351P is a very high sensitive silicon NPN epitaxial planar phototransistor in a low profile 0 5mm T-1% plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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S351P
S351P
15-Jul-96
phototransistor S351P
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