DIODE IN4007
Abstract: IN4007 transistor IN4007 Diodes In4007 in4007 DIODE pin configuration IN4007 DATASHEET CHARACTERISTICS DIODE IN4007 IN4007 ordering information IN4007 diode ordering information of IN4007
Text: DEM-OPA660-5G EVALUATION FIXTURE FEATURES APPLICATIONS ● EASY AND FAST PERFORMANCE TESTING ● COMPONENTS INCOME CONTROL ● SHOWS OPTIMIZED BOARD LAYOUT ● CIRCUIT DESIGNS ● PERFORMANCE CHECKS ● REPLACES SELF-MADE BOARDS DESCRIPTION The unassembled demo board DEM-OPA660-5G contains three different configurations of the OPA660
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DEM-OPA660-5G
DEM-OPA660-5G
OPA660
DEM-OPA660-1GC)
DEM-OPA660-2GC)
DEM-OPA660-3GC)
OPA660AP
OPA660,
AN-179
DIODE IN4007
IN4007
transistor IN4007
Diodes In4007
in4007 DIODE pin configuration
IN4007 DATASHEET
CHARACTERISTICS DIODE IN4007
IN4007 ordering information
IN4007 diode
ordering information of IN4007
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QSFP PCB design
Abstract: QSFP VCSEL array, 850nm for fiber EN61000-4-2 qsfp connector ipass connector 1761987-9 tyco vcsel Reflex Photonics
Text: Product Specification 20GBd QSFP 850nm Transceiver TRX20GVP1202 Product Specification 20GBd QSFP 850nm Transceiver TRX20GVP1202 Product Features: Hot pluggable QSFP optical transceiver 4 independent duplex channels operating at 5G Low power consumption, <0.9W typ.
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20GBd
850nm
TRX20GVP1202
20Gbt/s
TRX20GVP5002)
QSFP PCB design
QSFP
VCSEL array, 850nm for fiber
EN61000-4-2
qsfp connector
ipass connector
1761987-9
tyco vcsel
Reflex Photonics
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RLT1300-5G
Abstract: No abstract text available
Text: RLT1300-5G TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Structure: GaInAsP/InP SQW strucutre Peak Wavelength : single mode, typ. 1300 nm Optical Ouput Power: 5 mW Package: 9 mm Electrical Connection Pin Configuration Bottom View
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RLT1300-5G
RLT1300-5G
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Untitled
Abstract: No abstract text available
Text: DGB8112 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power800m Frequency Min. (Hz)5G Frequency Max. (Hz)8.2G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage12 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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DGB8112
Power800m
Voltage12
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Untitled
Abstract: No abstract text available
Text: DGB8113 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power800m Frequency Min. (Hz)5G Frequency Max. (Hz)8.2G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage12 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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DGB8113
Power800m
Voltage12
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Untitled
Abstract: No abstract text available
Text: WSTech Diode-Pumped Solid-State Blue Laser Specification Part No: TECBL-5G-473 OPTICAL Wavelength Product Features • • • Optical Output Power 5 mW Power stability <1% Laser Class Class IIIA Laser Operation Continuous Laser Structure Single Mode Laser
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TECBL-5G-473
TEM00
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RLT1300-5G
Abstract: SOT-148
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1300-5G TECHNICAL DATA Middle Power Infrared Laserdiode Structure: GaInAsP/InP SQW structure
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RLT1300-5G
OT-148)
RLT1300-5G
SOT-148
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RLT1650-5G
Abstract: No abstract text available
Text: ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1650-5G TECHNICAL DATA Infrared Laserdiode NOTE! Structure: QW structure
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RLT1650-5G
RLT1650-5G
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RLT1650-5G
Abstract: 1650 LD
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1650-5G TECHNICAL DATA Infrared Laserdiode NOTE! Structure: QW structure Lasing wavelength: 1650 nm typ.
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RLT1650-5G
RLT1650-5G
1650 LD
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RLT1550-5G
Abstract: No abstract text available
Text: ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1550-5G TECHNICAL DATA Infrared Laserdiode Structure: GaInAsP/InP, SQW structure
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RLT1550-5G
OT-148)
RLT1550-5G
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L9453
Abstract: No abstract text available
Text: 1x5mm 5 ELEMENTS LED ARRAY Kingbright L-945/5H BRIGHT RED L-945/5G GREEN L-945/5Y YELLOW Description Features l5 The Bright Red source color devices are made with Gallium ELEMENTS. lEASY Phosphide Red Light Emitting Diode. INSTALLATION. lSUITABLE The Green source color devices are made with Gallium
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L-945/5H
L-945/5G
L-945/5Y
L-945/5HD
L-945/5GD
L-945/5YD
6-L945-2
L-945/5HD
L-945/5GD
6-L945-3
L9453
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RLT1550-5G
Abstract: SOT-148 laser diode 1550 nm
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1550-5G TECHNICAL DATA Infrared Laserdiode Structure: GaInAsP/InP, SQW structure Lasing wavelength: single mode 1550 nm typ.
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RLT1550-5G
OT-148)
RLT1550-5G
SOT-148
laser diode 1550 nm
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RLT1300-5G
Abstract: No abstract text available
Text: ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1300-5G TECHNICAL DATA Middle Power Infrared Laserdiode Structure: GaInAsP/InP SQW structure
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RLT1300-5G
OT-148)
RLT1300-5G
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Untitled
Abstract: No abstract text available
Text: DB3X316J Silicon epitaxial planar type For small current rectification Unit: mm • Features Short reverse recovery time trr Low forward voltage VF Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: 5G
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DB3X316J
UL-94
DB2S316
DB3X316J0L
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SOT marking 5G
Abstract: No abstract text available
Text: PJESDA5V6-5G SERIES SOT-563 QUAD ARRAY FOR ESD PROTECTION FEATURES • Low Leakage < 1A@VRWM • Breakdown Voltage : 5.6Volt-6.7Volt@1mA • ESD Protection Meeting IEC61000-4-2-Level 4 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
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IEC61000-4-2-Level
2002/95/EC
OT-563
OT-563,
MIL-STD-750,
SOT marking 5G
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Untitled
Abstract: No abstract text available
Text: DRG1604/5A-DRG1604/5G 5/16" Glass Passivation Tin-can Diodes 特征 PF-3 FEATURES .25安培工作温度为125度,无热损耗下. 25 Ampere Operation At TL=125℃ With No Thermal Runaway. .正向压降低.Low forward voltage drop .低漏电. Low leakage current
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DRG1604/5A-DRG1604/5G
MIL-STD-202,
DRG1604/5A
DRG1604/5G
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Untitled
Abstract: No abstract text available
Text: PJESDA5V6-5G SERIES QUAD ARRAY FOR ESD PROTECTION SOT-563 • Breakdown Voltage : 5.6Volt-6.7Volt@1mA 0.044 1.10 0.035(0.90) • Low Leakage < 1A@VRWM • ESD Protection Meeting IEC61000-4-2-Level 4 • Lead free in compliance with EU RoHS 2011/65/EU directives.
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OT-563
IEC61000-4-2-Level
2011/65/EU
IEC61249
OT-563,
MIL-STD-750,
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5g diode
Abstract: MT208-5G MT208-5R MT208-5Y
Text: marktech STTTbSS 0QQD337 lflE D international »4 LED LAMP ARRAYS MT208-5R, MT208-5G, MT208-5Y OUTLINE AND PIN CONNECTION FEATURES • All plastic mold type MT20S-5R — Red Light Emission MT208-5G — Green Light Emission MT208-5Y — Yellow Light Emission
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OCR Scan
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0QQD337
MT208-5R,
MT208-5G,
MT208-5Y
MT208-5R
MT208-5G
MT208-5G
5g diode
MT208-5R
MT208-5Y
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5g diode
Abstract: MT205-5G MT205-5R MT205-5Y Led 5r
Text: marktech QGQQ33b 2 1ÖE D international LED LAMP ARRAYS MT205-5R, MT205-5G, MT205-5Y OUTLINE AND PIN CONNECTION FEATURES • All plastic mold type MT205-5R — Red Light Emission MT205-5G — Green Light Emission MT205-5Y — Yellow Light Emission • Bar point size 1x5mm.
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OCR Scan
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QGQQ33b
MT205-5R,
MT205-5G,
MT205-5Y
MT205-5R
MT205-5G
MT205-5Y
MT205-5G
5g diode
MT205-5R
Led 5r
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Untitled
Abstract: No abstract text available
Text: marktech international lflE STTTbSS D 0QQD337 »4 LED LAMP ARRAYS MT208-5R, MT208-5G, MT208-5Y OUTLINE AND PIN CONNECTION FEATURES • All plastic mold type MT20S-5R — Red Light Emission MT208-5G — Green Light Emission MT208-5Y — Yellow Light Emission
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OCR Scan
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0QQD337
MT208-5R,
MT208-5G,
MT208-5Y
MT20S-5R
MT208-5G
MT208-5R
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Untitled
Abstract: No abstract text available
Text: marktech QGQQ33b 2 1ÖE D in t er n a t io n a l LED LAMP ARRAYS MT205-5R, MT205-5G, MT205-5Y OUTLINE AND PIN CONNECTION FEATURES • All plastic mold type MT205-5R — Red Light Emission MT205-5G — Green Light Emission MT205-5Y — Yellow Light Emission
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OCR Scan
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QGQQ33b
MT205-5R,
MT205-5G,
MT205-5Y
MT205-5R
MT205-5G
T205-5Q
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1B4B41
Abstract: Fast Recovery Diodes "Fast Recovery Diodes" 1NU41 Z47C
Text: m RECTIFIERS CATEGORIES Devices REC TIFIERS — Single General purpose Rectifiers S5688G Fast Recovery Diodes FRD TVR 5G Fast Recovery Diodes (V-FR D) 1GH46 — Super Fast Recovery Diodes (S-FRD) 1NU41 — H igh-E fficiency Diodes (HED)- 1D L 4 2 A S chottky Barrier Diodes (SBD). 1 GW J43
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S5688G
1GH46
1NU41
1B4B41
15G4B42
1ZB24
Fast Recovery Diodes
"Fast Recovery Diodes"
Z47C
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LOW FORWARD VOLTAGE DROP DIODE RECTIFIER
Abstract: 5 VOLT 20 AMP smps Oltronics 12 VOLT 10 AMP smps LC3020 rectifier diode 6 amp 400 volt 3020 diode
Text: OLTRONICS INC Oltronics In c . ~5G D E j l n 7 7 û S cm 0DD0D43 D T - ' Z S ’ O 'l Data Sheet No. 118401 _ Power Schottky Diodes 148 Sidney St. • Cambridge, MA 02139 • Tel. 617 354-6534 30 Amp, 20 Volt Power Schottky Rectifier LC 3020
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b77flS14
00D0043
500mA
200mA
000pF
100KH2
100KH,
00D0D44
LOW FORWARD VOLTAGE DROP DIODE RECTIFIER
5 VOLT 20 AMP smps
Oltronics
12 VOLT 10 AMP smps
LC3020
rectifier diode 6 amp 400 volt
3020 diode
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Untitled
Abstract: No abstract text available
Text: THYRISTOR MODULE PK pd,pe,kk 55GB UL;E76102(M) Power Thyristor/Diode Module P K 5 5G B series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat ings up to 800 V are available, and electrically isolated mounting
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E76102
II00A
PK55GB
B-196
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