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    5F MARKING CODE TRANSISTOR Search Results

    5F MARKING CODE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    5F MARKING CODE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Features ■ Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F


    Original     		PDF 2002/95/EC) 2SK3546G

    2SK3546G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name


    Original     		PDF 2002/95/EC) 2SK3546G 2SK3546G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain


    Original     		PDF 2002/95/EC) 2SK3547G

    2SK3547G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain


    Original     		PDF 2002/95/EC) 2SK3547G 2SK3547G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name


    Original     		PDF 2002/95/EC) 2SK3546G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te


    Original     		PDF 2002/95/EC) 2SK3547G

    2SK3539G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain Th an W is k y


    Original     		PDF 2002/95/EC) 2SK3539G 2SK3539G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na


    Original     		PDF 2002/95/EC) 2SK3539G

    BC808-16

    Abstract: No abstract text available
    Text: BC808 PNP General Purpose Transistor FEATURES • Suitable for AF-Driver stages and low power output stages MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage


    Original     		PDF BC808 OT-23 2002/95/EC Jun-2009, KSPR03 BC808-16 BC808-25 BC808-40

    BC808

    Abstract: BC808-16 BC808-25 BC808-40
    Text: BC808 PNP General Purpose Transistor FEATURES • Suitable for AF-Driver stages and low power output stages MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI • Lead Free in RoHS 2002/95/EC Compliant


    Original     		PDF BC808 OT-23 2002/95/EC BC808 BC808-16 BC808-25 BC808-40

    Untitled

    Abstract: No abstract text available
    Text: BC808 PNP General Purpose Transistor FEATURES • Suitable for AF-Driver stages and low power output stages MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI • Lead Free in RoHS 2002/95/EC Compliant


    Original     		PDF BC808 OT-23 2002/95/EC

    4501 ic

    Abstract: npn transistors,pnp transistors BC807 BC807-16 BC808 BC808-16 BC817 BC818 marking 5A
    Text: BC807, BC808 Small Signal Transistors PNP FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) Top View ♦ Especially suited for automatic insertion .056 (1.43) .052 (1.33) 3 in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,


    Original     		PDF BC807, BC808 OT-23 BC817 BC818 OT-23 Group-16 BC807 4501 ic npn transistors,pnp transistors BC807 BC807-16 BC808 BC808-16 BC817 marking 5A

    pt1017

    Abstract: mt 1389 vde converter siemens modules GR 60 48V 120 A SMD Code 12W SOT-23 600w 12V 230V Inverter schematic mw 137 600g PT1000 NTC TEMPERATURE CHART smd 4pk EPL1902S2C 67127490
    Text: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 12-132 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 133-239 3.6 EC SI Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240-253


    Original     		PDF El00-KIT-ND J200-KIT-ND 1600-KIT-ND 1601-KIT-ND 1602-KIT-ND 1603-KIT-ND 1604-KIT-ND 923000-I-ND 10514-ND 10522-ND pt1017 mt 1389 vde converter siemens modules GR 60 48V 120 A SMD Code 12W SOT-23 600w 12V 230V Inverter schematic mw 137 600g PT1000 NTC TEMPERATURE CHART smd 4pk EPL1902S2C 67127490

    BC807

    Abstract: BC808 SOT23 5C 5F BC 807-25
    Text: BC 807 / BC 808 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP PNP Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1


    Original     		PDF OT-23 O-236) UL94V-0 Collect50 BC807 BC808 SOT23 5C 5F BC 807-25

    BC807W

    Abstract: BC808W hFE Group
    Text: BC 807W / BC 808W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 PNP Power dissipation – Verlustleistung 225 mW


    Original     		PDF OT-323 UL94V-0 07-16W 07-25W 07-40W 08-25W 08-40W 08-16W BC807W BC808W hFE Group

    Untitled

    Abstract: No abstract text available
    Text: BC 807W / BC 808W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 PNP Power dissipation – Verlustleistung 225 mW


    Original     		PDF OT-323 UL94V-0 07-16W 08-16W 08-25W 07-25W 07-40W 08-40W

    Untitled

    Abstract: No abstract text available
    Text: S O T- 2 3 B I P O L A R T R A N S I S T O R S NPN TRANSISTORS • New Product Marking VCEO hFE @VCE/IC VCEsat @IC/IB ICES @VCE Type Code V V/mA max.V mA/mA max.nA V BC817-16 6A 45 100-250 1/100 0.7 500/50 100 45 BC817-25 6B 45 160-400 1/100 0.7 500/50 100


    Original     		PDF BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 BC846A BC846B BC847A BC847B

    marking 5CT sot-23

    Abstract: 5Ct marking code marking code 5cs marking 5Cs BC807-40/5C code marking 5Ct sot-23 MARKING 5ct 5CS marking code sot 23 5Ct marking code sot 23 BC818
    Text: BC807 / BC808 BC807 / BC808 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2007-04-13 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse


    Original     		PDF BC807 BC808 OT-23 O-236) UL94V-0 BC807 BC807-16 marking 5CT sot-23 5Ct marking code marking code 5cs marking 5Cs BC807-40/5C code marking 5Ct sot-23 MARKING 5ct 5CS marking code sot 23 5Ct marking code sot 23 BC818

    BCX71RG

    Abstract: BCW61RB bcw61rd
    Text: T T T SEMI CON DUC TOR S 67 87D DE§ 4tainss DQ02353 1 r 02323 D PNP TRANSISTORS PNP Silicon Transistors Plastic Package TO-236 Marking Code - ~VcEO hpE Volts “ VcEsat at at - V C e/ - I c —Ic/—Ib - I ces at fr “ V ce Cob at -V c e /~I c CD Type


    OCR Scan     		PDF DQ02353 O-236) BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 BC856A BC856B BCX71RG BCW61RB bcw61rd

    marking code HF

    Abstract: transistors 3K
    Text: PNP Transistors PNP Silicon Transistors TO-236 Plastic Package LU 1 Marking Code £ Type hFE -V at —V ce at ce/ - lc fT - I ces -VcEsat at —lo /—I b Cob at -V at -V ce/ - I c V/mA max.V mA/mA max. nA V MHz V/mA max. pF V 45 45 45 25 25 25 65 65 45


    OCR Scan     		PDF O-236 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 BC856A BC856B BC857A marking code HF transistors 3K

    SOT89 MARKING CODE 3D

    Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
    Text: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK


    OCR Scan     		PDF OT143, OT223 OT323 PXTA27 BCX51 BCW60A BCW60B BCX51-10 BCW60C BCX51-16 SOT89 MARKING CODE 3D sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G

    BC 194 TRANSISTORS

    Abstract: marking code BC marking 5A
    Text: PNP Silicon AF Transistors • • • • • BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type S BC 807-16 S BC 807-25 S BC 807-40 Marking


    OCR Scan     		PDF 103mA BC 194 TRANSISTORS marking code BC marking 5A

    marking 5A

    Abstract: BC807 itt ITT Intermetall
    Text: BC807, BC808 PNP Silicon Epitaxial Planar Transistors for switching, A F driver and amplifier applications. Especially suited for automatic insertion in thick- and thin-film circuits. Top View These transistors are subdivided into three groups -16, -25 and -40 according to their current gain.


    OCR Scan     		PDF BC807, BC808 BC817 BC818 BC807-16 BC808-16 OT-23 marking 5A BC807 itt ITT Intermetall

    Untitled

    Abstract: No abstract text available
    Text: BC807, BC808 Small Signal Transistors PNP FEATURES SOT-23 ♦ PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier " applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,


    OCR Scan     		PDF BC807, BC808 OT-23 BC817 BC818 OT-23 BC807-16 BC808-16