5Ct transistor
Abstract: transistor 5ct 91 BC808-16W BC807-16W Q 817 5ct 48 BC807-25W BC807-40W transistor 5bt BC808-25W
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC807W; BC808W PNP general purpose transistors Product specification Supersedes data of March 1993 File under Discrete Semiconductors, SC04 1997 Jun 09 Philips Semiconductors Product specification PNP general purpose transistors
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M3D187
BC807W;
BC808W
OT323
BC817W
BC818W.
SCA54
117047/00/02/pp8
5Ct transistor
transistor 5ct 91
BC808-16W
BC807-16W
Q 817
5ct 48
BC807-25W
BC807-40W
transistor 5bt
BC808-25W
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5ET-0500H
Abstract: 5ET-020H 3.15A 250V pse Micro Fuse 5ET-0250H 5ET 200 5ET-010H 5ET-0100H 5ET 160 5ET-040H 5ET-06
Text: RoHS & Pb-free 5ET RADIAL LEAD MICRO FUSE TIME-LAG DIMENSIONS: Short Lead 1082 0.1 TAPING SPECIFICATIONS: CATALOG NO. AMPERE RATING 5ET-0100H 5ET-0I25H 5ET-0160H 5ET-0200H 5ET-0250H 5ET-0315H 5ET-0400H 5ET-0500H 5ET-0630H 5ET-0800H 5ET-010H 5ET-OI3H 5ET-016H
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5ET-0100H
5ET-0I25H
5ET-0160H
5ET-0200H
5ET-0250H
5ET-0315H
5ET-0400H
5ET-0500H
5ET-0630H
5ET-0800H
5ET-020H
3.15A 250V pse Micro Fuse
5ET 200
5ET-010H
5ET 160
5ET-040H
5ET-06
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5ET 200
Abstract: No abstract text available
Text: 5 x 20mm G lass Tube Type 5ET / 5ETP RoHS 6 Compliant Time-lag Fuse Series High Surge-proof,Enhanced-Breakirtg Capacity 5ET Apr2013D HF 5ET / 5ETP Series, 5 x 20mm Time-lag Fuse D e scrip tio n 5x20mm Time lag fuse,high surge-proof,enhanced breaking capacity, glass tube body cartridge fuse
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Apr2013D
5x20mm
IEC-127-2
EIA-296-F
5ET 200
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Untitled
Abstract: No abstract text available
Text: Type 5ET / 5ETP 5 x 20mm Glass Tube RoHS 6 Compliant Time-lag Fuse Series High Surge-proof,Enhanced-Breaking Capacity 5ETApr2013D HF dLc€ 5ET / 5ETP S e rie s, 5 x 20 m m T im e -la g F use Description 5x20mm Time lag fuse,high surge-proof,enhanced breaking capacity, glass tube body cartridge fuse
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5ETApr2013D
5x20mm
IEC-127-2
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marking 3t1
Abstract: BYW54 88034 BYW55 BYW56
Text: N AMER P H I L I P S / D I S C R E T E bTE ]> • b b S B 'm QGBbb? 5ET ■ APX BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES D ouble-diffused glass passivated re c tifie r diodes in h e rm e tica lly sealed axial-leaded glass envelopes, capable o f absorbing reverse transients.
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bbS3131
0GBbb77
BYW54
OD-57.
BYW55
BYW56
7Z88032
marking 3t1
88034
BYW56
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Untitled
Abstract: No abstract text available
Text: AC353 • ACT353 54AC/74AC353 • 54ACT/74ACT353 Dual 4-Input Multiplexer With 3-State Outputs Connection Diagrams Description The ’AC/’ACT353 is a dual 4-input multiplexer with 3-state outputs. It can select two bits of data from four sources using common Select inputs. The
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AC353
ACT353
54AC/74AC353
54ACT/74ACT353
ACT353
ACT253
54/74AC/ACT
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Untitled
Abstract: No abstract text available
Text: HV21 ßi Supertex inc. 8-Channel High Voltage Analog Switch Ordering Information Package Options Vpp - V nn Die in waffle pack 24-pin plastic DIP 28-lead plastic chip carrier HV2116X HV2116P HV2116PJ 160V Features General Description “ Not recommended for new designs. Please use HV202/203 or
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24-pin
28-lead
HV2116X
HV2116P
HV2116PJ
HV202/203
HV204/205/206
24-pin
28-Pin
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pal16x4
Abstract: No abstract text available
Text: 0257526 ADV M I C R O 96D P L A / P L E / ARRAYS 27109 D A rithm etic Series P A LI 6 X 4 • Bit-palr decoding ADV O rd erin g In fo rm atio n F e a tu re s /B e n e fits PAL16X4 C N STD • Easy generation of arithmetic operations D escrip tio n ARRAY INPUTS
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PAL16X4
T-46-13-47
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max2957
Abstract: No abstract text available
Text: Am2956/Am2957 Am2956/Am2957 Octal Latches with Three-State Outputs DISTINCTIVE CHARACTERISTICS • • • • 8-bit, high-speed parallel latches Am2956 has non-inverting inputs Am2957 has inverting inputs Vq l - 0-5V max at Iq l “ 32mA Hysteresis on latch enable input for improved noise
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Am2956/Am2957
Am2956
Am2957
Am2957
03604B
max2957
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IC KD 2107 6 PIN
Abstract: IC KD 2107 KD 2107 6 PIN 3150
Text: S-MOS GRAPHICS S Y S T E M S A Seiko E p so n A ffilia te SED1767 160 SEGMENT DRIVER WITH GRAY SCALE June 1995 • DESCRIPTION The SED1767 is a derivitive of the SED1765. The SED1767 is a 160-bit output LCD segment column driver which provides high-voltage swing up to 40 volts. The LSI uses a PWM (Pulse Width Modulation) algorithm
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SED1767
SED1767
SED1765.
160-bit
D0031SS
IC KD 2107 6 PIN
IC KD 2107
KD 2107 6 PIN
3150
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 8 Megabit High Speed CMOS SRAM MICROSYSTEMS DPS512X 16Cn3/DPS512X 16Bn3 DESCRIPTION: The DPS512X16Cn3/DPS512X16Bn3 High Speed SRAM “ STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC .
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DPS512X
16Cn3/DPS512X
16Bn3
DPS512X16Cn3/DPS512X16Bn3
50-pin
-t-85
3QA097-38
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645Q
Abstract: 2E2000
Text: 64Kx 32 EEPROM Module molate PUMA 2E2000-12/15/20/25 Issue 1.0 : January 1992 S em iconductor ADVANCE PRODUCT INFORMATION Inc. 2,097,152 bit CMOS High Speed EEPROM Pin Definition Features 026 012 A6 011 VIEW FROM ABOVE o O O A10 O E O o o NC A15 A l l o o O
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2E2000-12/15/20/25
MIL-STD-883C
2E2000MB-20
645Q
2E2000
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HYM7V73A1601B
Abstract: HYM7V73A1601
Text: HYM7V73 A1601BTFG 16Mx72, 8Mx8 based, PC133 DESCRIPTION The Hynix HYM7V73A1601B F-Series are 16Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 8Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kblt EEPROM in 8pin
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HYM7V73
A1601BTFG
16Mx72,
PC133
HYM7V73A1601B
16Mx72bits
400mil
54pin
168pin
HYM7V73A1601
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w1a11
Abstract: No abstract text available
Text: O K I Semiconductor MSM65X227 8-Bit Microcontroller with 4K-Byte EEPROM GENERAL DESCRIPTION T he M SM 65 X2 27 is a high-perform ance, 8-bit m icrocontroller that em plo ys O K I o rig in a l C P U core, the nX-8/50. The M SM 65 X2 27 includes a m in im u m instruction execution tim e o f 667 ns
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MSM65X227
nX-8/50.
60K-byte
65X227,
connected171
w1a11
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CX20206
Abstract: ingenuity ct
Text: CX20206 SONY fl hit 35 MSPS RGB 3-Channel D/A Converter_ 1 IFor the availability of this product, please contact the sales office.l escription C X 20206 is an 8 bit high-speed D/A con verter for video band use. It has an output/input
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CX20206
CX20206
35MSPS
DIP-42P-02
ingenuity ct
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Untitled
Abstract: No abstract text available
Text: 19-0478; Rev 0; 3/96 > k ly a x i> k l Dual-Output C h a rg e Pum p w ith Sh u td o w n The M AX864 CMOS, c h a rg e -p u m p , D C -D C vo lta g e converter p ro du ces a positive and a negative o utp ut from a sin g le p o sitive inp ut, and re q u ire s o nly fo u r
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AX864
185kHz,
MAX864
1-0055A
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L465
Abstract: No abstract text available
Text: August 1994 Micro Linear ML4652, ML4658 10BASE-T Transceiver GENERAL DESCRIPTION FEATURES The ML4652/ML4658 10BASE-T Transceivers are single chip cable line driver/receivers [hat provides all of the functionality required to implement both an internal and
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ML4652,
ML4658
10BASE-T
ML4652/ML4658
10BASE-T
220ft
62kft
VA445
L465
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27ur
Abstract: No abstract text available
Text: m m t b 1 . * h\ « w e • Bn^ e - 7 i £ S L & ± k si % m ® V KRM T/-K >«v-K Vrsm r /- k t * ' / - K Rfl ¡ - i t s VK r / - k t *v - KiwuEPfln-e£ s i a a s w E f i o f k * » H fi (gfcfi) fflU ifc jS L W JrC Repetitive Peak Reverse Voltage e -
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Untitled
Abstract: No abstract text available
Text: MB86961/MB86961A FUJITSU UNIVERSAL INTERFACE FOR 10 BASE-T TWISTED-PAIR ETHERNET DATA SHEET JANUARY 1995 Note: All descriptions apply to both MB86961 and MB86961A unless otherwise noted. FEATURES • Combines Manchester encoder/decoder and twisted pair transceiver functions
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MB86961/MB86961A
MB86961
MB86961A
B86961A
/10BA
Q/150
48-LEAD
FPT-48P-M02X,
F48002S-9C
37417Sh
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TH 50VSF1400/1401AAXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE SRAM AND FLASH M EM ORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF1400/1401AAXB is a mixed containing a package 2,097,102-bit/ SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory
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50VSF1400/1401AAXB
TH50VSF1400/1401AAXB
102-bit/
216-bit
48-pin
P-BGA48-1014-1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 128K x 36 and 256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM The MCM63F737 and MCM63F819 are 4M-bit synchronous fast static RAMs designed to provide a burstable, high performance, secondary cache for the
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MCM63F737/D
MCM63F737
MCM63F819
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lv 8013
Abstract: ITAR B945 "network interface cards"
Text: ff?/31/95 09‘.34'.55 40B-943-ZB43-> CYPRESS • Compile* with IEEE B02Jn draft standard • Three operating n ode« — 100BASE-T4 — 10BASE-T Full D n p la — 10BASE-T • Media Independent Interface Mil — Three-state receive port — Serial management port
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40B-943-ZB43->
1603B00193Z
B02Jn
100BASE-T4
10BASE-T
10BASE-T
CY7C971
100BASE-T4/10BASE-T
CY7C971
40fl-943-ZB43->
lv 8013
ITAR
B945
"network interface cards"
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Untitled
Abstract: No abstract text available
Text: A p r ili 9 97 PRELM M ARY ^Ék Micro Linear ML4901 High Current Synchronous Buck Controller GENERAL DESCRIPTION FEATURES TheM L 4901 h ig h c u rre n ts y n c h ro n o u s b u c k c o n tm H e rh a s b e e n d e sig n e d to p ro v id e h ig h efficien cy D C /t> C
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ML4901
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3EML
Abstract: No abstract text available
Text: INTEGRATED DEVICE m 47E D MA5S771 000^003 3 • IDT HIGH-SPEED 16Kx 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: IDT7006S/L T - H 6 - 2 S - I Z M/5 ■= L for BUSY input on Slave • Interrupt Flag • On-chip port arbitration logic
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MA5S771
IDT7006S/L
45/55/70ns
35/45/55ns
IDT7006S
750mW
IDT7006L
IDT7006
3EML
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