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    5D3 TRANSISTOR Search Results

    5D3 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    5D3 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFS20W

    Abstract: 900MHZ 5d3 transistor
    Text: BFS20W NPN Medium Frequency Transistor COLLECTOR 3 3 P b Lead Pb -Free 1 1 BASE FEATURES Low current(max 25 mA) Low voltage(max. 20V) Very low feedback capacitance (typ.350fF) SOT-323 / SC-70 package. 2 EMITTER 2 SOT-323(SC-70) APPLICATION IF and VHF applications in thick and thin-film circuits.


    Original     		PDF BFS20W 350fF) OT-323 SC-70 SC-70) OT323 -Feb-07 BFS20W 900MHZ 5d3 transistor

    DIODE marking CK 6CA

    Abstract: DIODE marking 7BA SG 6CA 6ca DIODE code 20c 7ba Diode HP5 637 409 SG 5BA MARKING CO5 sg 7ba ai cm1 100 1e8
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF M306H1SFP DIODE marking CK 6CA DIODE marking 7BA SG 6CA 6ca DIODE code 20c 7ba Diode HP5 637 409 SG 5BA MARKING CO5 sg 7ba ai cm1 100 1e8

    DIODE marking 7BA

    Abstract: 5D6 diode DL000D pcr 606 r marking 2EC CORE F5A DSP110 transistor 603 47e marking code 2AE DIODE ED 34
    Text: MITSUBISHI MICROCOMPUTERS M306H1SFP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER with DATA SLICER and ON-SCREEN DISPLAY CONTROLLER 1. Description The M306H1SFP is single-chip microcomputer using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and is packaged in a 144-pin plastic molded QFP. This single-chip


    Original     		PDF M306H1SFP 16-BIT M306H1SFP M16C/60 144-pin DIODE marking 7BA 5D6 diode DL000D pcr 606 r marking 2EC CORE F5A DSP110 transistor 603 47e marking code 2AE DIODE ED 34

    NEC 10F P64 TRANSISTOR

    Abstract: DIODE marking 7BA sy21 nec 08f p74 sg 7ba nec 76f CD15 SEVEN SEGMENT DISPLAY 38438 CK 7AA MANUAL PDI 45A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF M306H1SFP NEC 10F P64 TRANSISTOR DIODE marking 7BA sy21 nec 08f p74 sg 7ba nec 76f CD15 SEVEN SEGMENT DISPLAY 38438 CK 7AA MANUAL PDI 45A

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 141S NPN Silicon Digital Transistor Array ►Switching circuit, inverter, interface, driver circuit • T w o galvanic internal isolated Transistors in on e package > Built in bias resistor (R -|= 2 2 k il, R 2= 2 2 k fl) W Ds Q 6 2 7 0 2 -C 2 4 1 6


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bb 5 3 S 31 0 0 2 T 2 b 7 72A H APX Product specification UHF push-pull power transistor BLV948 N AMER PHILIPS/DISCRETE FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting


    OCR Scan     		PDF BLV948

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V17160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V17160 isOKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17160 576-Word 16-Bit MSM51V17160 16-bit 2048cycles/32ms

    6ej7

    Abstract: STP3010 sfz2 IS279
    Text: i p -'i í i 1i . S un M icroelectronics July 1997 TGX DATASHEET TurboGX Graphics Accelerator D e s c r ip t io n The STP3010 employs over 128,000 gates and implements an extended superset of previous GX architectures. This chip provides an integral SBus interface, VRAM video random-access memory controller, a high-per­


    OCR Scan     		PDF STP3010 STP3010 6ej7 sfz2 IS279

    graphics accelerator

    Abstract: No abstract text available
    Text: S un M ic r o e l e c t r o n ic s J u ly 1997 TGX TurboGX Graphics Accelerator DATA SHEET D e s c r ip t io n The STP3010 em ploys over 128,000 gates and im plem ents an extended superset of previous GX architectures. This chip provides an integral SBus interface, VRAM video random -access m emory controller, a high-performance m ath engine, plus a high-performance rendering (or drawing) engine. A complete graphics


    OCR Scan     		PDF STP3010 STP3010 223-Pin graphics accelerator

    M37451E8SP

    Abstract: M37451E8FP M37451SFP M37451 M37451SSP M37451ECFP M37451M8-XXXGP M37451E8DXXXSP M37451SGP M37451MC-XXXFP
    Text: M IT S U B IS H I M IC R O C O M P U TE R S 7451 Group SINGLE-CHIP 8-B IT CMOS MICROCOMPUTER DESCRIPTION The 7451 group is a single-chip microcomputer designed with CMOS technology. In addition to its simple instruction sets, the ROM, RAM, and I/O addresses are placed on the same memory map to


    OCR Scan     		PDF

    dbl 2052

    Abstract: ba 5839 fp sj 2252 ba 5839 fb KSD 302 SCR 131- 6 WJ 66 SCR 131- 6 WJ 60 BR 5254 SCR 131- 6 WJ 69 KL SN 102 lcd
    Text: HD66732 Graphics Liquid Crystal Display Controller/Driver Supporting JIS L evel-1 and Level-2 Kanji ROM HITACHI Rev 1.0 Jun. 1st, 1998 Description T he H D 66732 is a dot-m atrix liquid crystal display (LC D ) controller and driv er LSI that displays 1 l-b y -1 2


    OCR Scan     		PDF HD66732 HD66732 l-by-12 10-character 80-system dbl 2052 ba 5839 fp sj 2252 ba 5839 fb KSD 302 SCR 131- 6 WJ 66 SCR 131- 6 WJ 60 BR 5254 SCR 131- 6 WJ 69 KL SN 102 lcd

    MECL 10000

    Abstract: MCM6830A transistor bf 175 MCM6605AL1 c3460 equivalent MCM6810A mcm6616
    Text: GENERAL INFORMATION 1 RANDOM ACCESS MEMORIES RAM 2 READ ONLY MEMORIES (ROM) 3 M6800 SYSTEM MEMORIES APPLICATION NOTES 5 RELIABILITY INFORMATION 6 MEMORY INTERFACE i Volume 7 / Series A prepared by Technical Information Center Semiconductor Data Library MOS MEMORIES


    OCR Scan     		PDF M6800 MECL 10000 MCM6830A transistor bf 175 MCM6605AL1 c3460 equivalent MCM6810A mcm6616