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Abstract: No abstract text available
Text: M/A-COM ADV SEMICONDUCTOR E?E D Sb421fi3 Q00D2Sb 5 r-si • / MA4GM210-500 GaAs MMIC DC-10 GHz SPDT Switch Chip Features ■ BROADBAND DC - 10 GHz ■ 3 NANOSECOND SWITCHING ■ LOW POWER CONSUMPTION ■ LOW LOSS ■ HIGH ISOLATION ■ HIGH RELIABILITY Description
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Sb421fi3
Q00D2Sb
MA4GM210-500
DC-10
MA4GM210
MA4GM210-500
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Untitled
Abstract: No abstract text available
Text: M M /A - C.VQfl 11/ M "V ADV SEMICONDUCTOR 27E A% m D StH21fl 3 00G0340 5 T < 7 Y /3 > o M A4GM303-500 2000 MA4GM303 SERIES 2010 2012 2100 GaAs MMIC DC - 2 GHz Voltage Variable Absorptive Attenuator Features • SINGLE* OR DUAL DG BIAS CONTROL ■ EASILY CASCADABLE
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MA4GM303
StH21fl
00G0340
A4GM303-500
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Untitled
Abstract: No abstract text available
Text: M/A-COM AI>V SEMICONDUCTOR Am 57E D 5bM21fl3 0ÜDDE32 5 T 'S / - // MA4GM202F-500 2000 2012 2100 MA4GM202F SERIES GaAs M M IC D C -4 SPDT Switch Features • BROADBAND: DC - 4 GHz ■ CURRENT CONSUMPTION <100 /¿A ■ 3 NANOSECOND SWITCHING ■ EXCELLENT INTERMODULATION
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5bM21fl3
DDE32
MA4GM202F-500
MA4GM202F
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