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    5B1 TRANSISTOR Search Results

    5B1 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    5B1 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5B1 SOT23

    Abstract: 5B1 SOT-23 sot23 marking 5c1 marking 5b1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16LT1 DEVICE MARKING AND ORDERING INFORMATION Device Marking LBC807-16LT1 LBC807-16LT1G 5A1 SOT-23 5B1 SOT-23 5B1 Pb-Free LBC807-40LT1 LBC807-40LT1G


    Original     		PDF LBC807-16LT1 LBC807-16LT1G OT-23 LBC807-40LT1 LBC807-40LT1G LBC807-25LT1 LBC807-25LT1G 5B1 SOT23 5B1 SOT-23 sot23 marking 5c1 marking 5b1

    5C1 SOT-23

    Abstract: sot23 marking 5c1 LBC80725LT3G marking 5b1 5B1 sot23 marking 5a1 sot23 LBC807-40LT3G LBC807-25 LBC807-16LT1G LBC807-16LT3G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape 5C1 SOT-23 sot23 marking 5c1 LBC80725LT3G marking 5b1 5B1 sot23 marking 5a1 sot23 LBC807-40LT3G LBC807-25 LBC807-16LT1G LBC807-16LT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape

    5B1 SOT-23

    Abstract: LBC807-16LT1G LBC807-16LT3G LBC807-25LT1G LBC807-40LT1G LBC807-40LT3G sot23 marking 5c1 Transistors 5A1 J
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape 5B1 SOT-23 LBC807-16LT1G LBC807-16LT3G LBC807-25LT1G LBC807-40LT1G LBC807-40LT3G sot23 marking 5c1 Transistors 5A1 J

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G LBC807 AEC-Q101

    LBC80725LT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G LBC807 AEC-Q101 3000/Tape LBC80725LT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 AEC-Q101 S-LBC807-16LT1G LBC807-16LT3G S-LBC807-16LT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape

    5b1 transistor

    Abstract: transistor 5B1 5B1 IR 6B2 transistor 40 TQFN 5x5 6B1 transistor MAX4890 MAX4890ETJ MAX4891 MAX4891ETJ
    Text: 19-3577; Rev 1; 8/05 10/100/1000 Base-T Ethernet LAN Switch The MAX4890/MAX4891/MAX4892 high-speed analog switches meet the needs of 10/100/1000 Base-T applications. These devices switch the signals from two interface transformers and connect the signals to a single 10/100/1000 Base-T Ethernet PHY, simplifying


    Original     		PDF MAX4890/MAX4891/MAX4892 MAX4891/MAX4892 MO220, T4866-1. 5b1 transistor transistor 5B1 5B1 IR 6B2 transistor 40 TQFN 5x5 6B1 transistor MAX4890 MAX4890ETJ MAX4891 MAX4891ETJ

    RJ45 LED

    Abstract: 6B2 transistor A7188 6B1 transistor MAX4890 MAX4890ETJ MAX4891 MAX4891ETJ MAX4892 MAX4892ETX
    Text: 19-3577; Rev 0; 2/05 10/100/1000 Base-T Ethernet LAN Switch The MAX4890/MAX4891/MAX4892 high-speed analog switches meet the needs of 10/100/1000 Base-T applications. These devices switch the signals from two interface transformers and connect the signals to a single 10/100/1000 Base-T Ethernet PHY, simplifying


    Original     		PDF MAX4890/MAX4891/MAX4892 MAX4891/MAX4892 MO220, T4866-1. RJ45 LED 6B2 transistor A7188 6B1 transistor MAX4890 MAX4890ETJ MAX4891 MAX4891ETJ MAX4892 MAX4892ETX

    marking code 5b1

    Abstract: 5C1 SOT-23 Willas Electronic 5B1 SOT 23 5B1 SOT-23 sot23 marking 5c1 marking 5a1
    Text: WILLAS BC807-xxLT1 General Purpose Transistors PNP Silicon FEATURE Collector current capability IC = -500 mA. Collector-emitter voltage VCEO max = -45 V. General purpose switching and amplification. PNP complement: BC807 Series. SOT–23 We declare that the material of product compliance with RoHS requirements.


    Original     		PDF BC807 BC807-xxLT1 BC807-16LT1 3000/Tape BC807-25LT1 BC807-40LT1 OT-23 marking code 5b1 5C1 SOT-23 Willas Electronic 5B1 SOT 23 5B1 SOT-23 sot23 marking 5c1 marking 5a1

    BC807-40

    Abstract: 5B1 SOT-23 BC807-16 BC807-25
    Text: BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings TA=25 C unless otherwise noted Symbol Value Collector-Emitter Voltage V CEO -45 Unit V Collector-Base Voltage VCBO


    Original     		PDF BC807-16/ BC807-25 BC807-40 OT-23 BC807-16/BC807-25 OT-23 BC807-40 5B1 SOT-23 BC807-16 BC807-25

    Transistors 5A1 8

    Abstract: SBC80-16L marking 5a1 5B1 SOT-23 BC807 5C
    Text: BC807-16L, SBC807­16L BC807-25L, SBC807­25L, BC807-40L, SBC807-40L General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique


    Original     		PDF BC807-16L, SBC80716L BC807-25L, SBC80725L, BC807-40L, SBC807-40L AEC-Q101 OT-23 BC807-16LT1/D Transistors 5A1 8 SBC80-16L marking 5a1 5B1 SOT-23 BC807 5C

    5B1 SOT-23

    Abstract: BC807 marking 351 sot23 5B1 SOT23 BC807-40LT1 5C MARKING CODE SOT23 5B1 SOT 23
    Text: BC807-16LT1, BC807-25LT1, BC807-40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Packages are Available 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO −45 V Collector - Base Voltage


    Original     		PDF BC807-16LT1, BC807-25LT1, BC807-40LT1 OT-23 BC807-16LT1) BC807-25LT1) BC807-40LT1) 5B1 SOT-23 BC807 marking 351 sot23 5B1 SOT23 5C MARKING CODE SOT23 5B1 SOT 23

    PCI-Express 2.0 Pin

    Abstract: Nippon capacitors
    Text: PI2PCIE412-D Enhanced, 1.8V, PCI-Express Compliant, 4-Differential Channel, 2:1 Mux/DeMux Switch, w/ Single Enable Features Description • • • • • • • • Pericom Semiconductor’s PI2PCIE412-D is an 8 to 4 differential channel multiplexer/demultiplexer switch. This solution can


    Original     		PDF PI2PCIE412-D -65dB 10MHz 42-contact, PS8788 42-Contact PCI-Express 2.0 Pin Nippon capacitors

    5B1 SOT-23

    Abstract: MARKING CODE 5B1 5B1 SOT23-3 BC807-40LT1 AI mm sot 25 SOT-23 Package onsemi BC807
    Text: BC807−16LT1, BC807−25LT1, BC807−40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Packages are Available 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO −45 V Collector - Base Voltage


    Original     		PDF BC807-16LT1, BC807-25LT1, BC807-40LT1 BC807-16LT1/D 5B1 SOT-23 MARKING CODE 5B1 5B1 SOT23-3 BC807-40LT1 AI mm sot 25 SOT-23 Package onsemi BC807

    BC807-40LT1G

    Abstract: BC807 BC807-16LT1G BC807-25LT1G
    Text: BC807-16LT1G, BC807-25LT1G, BC807-40LT1G General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit


    Original     		PDF BC807-16LT1G, BC807-25LT1G, BC807-40LT1G BC807-16LT1/D BC807-40LT1G BC807 BC807-16LT1G BC807-25LT1G

    marking 5b1

    Abstract: On semiconductor date Code sot-23 BC807 BC80740LT1G 5B1 SOT-23 BC807-1 sot-23 Marking B1
    Text: BC807−16LT1, BC807−25LT1, BC807−40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −45 V Collector − Base Voltage


    Original     		PDF BC807-16LT1, BC807-25LT1, BC807-40LT1 BC807-16LT1/D marking 5b1 On semiconductor date Code sot-23 BC807 BC80740LT1G 5B1 SOT-23 BC807-1 sot-23 Marking B1

    marking code 5b1

    Abstract: 5B1 SOT-23 BC807 5c sot-23 sot-23 Marking B1 marking b1 sot-23
    Text: BC807−16LT1, BC807−25LT1, BC807−40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −45 V Collector − Base Voltage


    Original     		PDF BC807-16LT1, BC807-25LT1, BC807-40LT1 BC807-16LT1/D marking code 5b1 5B1 SOT-23 BC807 5c sot-23 sot-23 Marking B1 marking b1 sot-23

    BC807-40LT1G equivalent

    Abstract: bc807 BC807-16LT1G BC807-25LT1G BC807-40LT1G BC80740LT1G 5B1 SOT-23
    Text: BC807-16LT1G, BC807-25LT1G, BC807-40LT1G General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit


    Original     		PDF BC807-16LT1G, BC807-25LT1G, BC807-40LT1G BC807-16LT1/D BC807-40LT1G equivalent bc807 BC807-16LT1G BC807-25LT1G BC807-40LT1G BC80740LT1G 5B1 SOT-23

    jb transistor

    Abstract: 2SC2356 374C
    Text: h'UdlTSU niC R O ELEC T R O N IC S "37 DE | 3 7 4 ‘ì 7 t . E □□□1751 FMICROELECTRONICS U JIT S U 2SC2356 SILICON HIGH SPEED TRIPLE DIFFUSED ^ NPN POWER TRANSISTOR 10 AMP, 400 VOLT r- J3-/J 3 7 4 9 7 1>2 FUJITSU MICROELECTRONICS 37C 01751 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 374T7bE 2SC2356 O-220 jb transistor 2SC2356 374C

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCP 54 . BCP 56 NPN Silicon AF Transistors • • • • For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCR 51 . BCP 53 PNP Type Marking Ordering Code (tape and reel) Pin Configuration


    OCR Scan     		PDF Q62702-C2117 Q62702-C2119 Q62702-C2120 Q62702-C2148 Q62702-C2122 Q62702-C2123 Q62702-C2149 Q62702-C2125 Q62702-C2106 OT-223

    ceramic disc capacitor 100nf 104

    Abstract: C1-C18 TT 2222 npn capacitor 100nf multilayer SOT171 transistor tt 2222 BLV97CE
    Text: N AMER P H I L I P S / D I S C R E T E bTE D I Philips Semiconductors ÜET1 7 1 E 7 fl B A P X BLV97CE Data sheet status bbSBTBl Product specification UHF power transistor date of issue March 1993 FEATURES QUICK REFERENCE DATA • Internal input matching to achieve


    OCR Scan     		PDF BLV97CE bbS3T31 OT171 ceramic disc capacitor 100nf 104 C1-C18 TT 2222 npn capacitor 100nf multilayer SOT171 transistor tt 2222 BLV97CE