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    5AS PACKAGE Search Results

    5AS PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    5AS PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BC807, BC808 PNP Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As 1=B 2=E


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    BC807, BC808 BC817, BC818 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC807, BC808 PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As


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    BC807, BC808 BC817, BC818 VPS05161 BC807-16 BC807-25 BC807-40 BC808-25 BC808-40 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC807, BC808 PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As


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    BC807, BC808 BC817, BC818 BC807-16 BC807-25 BC807-40 BC808-25 BC808-40 VPS05161 PDF

    MARKING 1B SOT23

    Abstract: 5As SOT23 1B SOT23 5cs sot23 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-40
    Text: BC807, BC808 PNP Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As 1=B 2=E


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    BC807, BC808 BC817, BC818 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 MARKING 1B SOT23 5As SOT23 1B SOT23 5cs sot23 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-40 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC807, BC808 PNP Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As 1=B 2=E


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    BC807, BC808 BC817, BC818 VPS05161 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 PDF

    transistor 5cs

    Abstract: marking 5Cs BC807 BC807-16 BC807-16W BC807-25 BC807-25W BC807-40 BC807-40W BC817
    Text: BC807./BC808. PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817./W, BC818./W NPN • Pb-free (RoHS compliant) package 1)


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    BC807. /BC808. BC817. BC818. BC807-16 BC807-16W OT323 BC807-25 BC807-25W transistor 5cs marking 5Cs BC807 BC807-16 BC807-16W BC807-25 BC807-25W BC807-40 BC807-40W BC817 PDF

    5BW 30

    Abstract: No abstract text available
    Text: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional


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    SMA5J40CA DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 5BW 30 PDF

    transistor 5bw

    Abstract: MARKING CODE 5bw marking 5bw marking code 5bw 67 5BW MARKING marking 5ah marking code 5AW SMA5J22 transistor 6bn SMA5J36
    Text: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional


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    SMA5J40CA DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 transistor 5bw MARKING CODE 5bw marking 5bw marking code 5bw 67 5BW MARKING marking 5ah marking code 5AW SMA5J22 transistor 6bn SMA5J36 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


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    SMA5J40CA DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 18-Jul-08 PDF

    A1576

    Abstract: GSA1576A GSC4081
    Text: ISSUED DATE :2005/02/18 REVISED DATE : G S A1576 A P NP E PITAX IAL PL ANAR T RANS ISTO R Description The GSA1576A is designed for use in driver stage of AF amplifier and general purpose amplification. Features Complements the GSC4081 Package Dimensions REF.


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    A1576 GSA1576A GSC4081 GSC4081 PDF

    marking code 5bw

    Abstract: marking 5bs marking 5AY 5AW 83 SMA5J10 SMA5J12
    Text: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


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    SMA5J40CA J-STD-020, 2002/95/EC 2002/96/EC 11-Mar-11 marking code 5bw marking 5bs marking 5AY 5AW 83 SMA5J10 SMA5J12 PDF

    MARKING 5bk

    Abstract: No abstract text available
    Text: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional


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    SMA5J40CA DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 MARKING 5bk PDF

    5AW 67

    Abstract: marking code 5bw 67 SMA5J30
    Text: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


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    SMA5J40CA DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 5AW 67 marking code 5bw 67 SMA5J30 PDF

    transistor 5bw

    Abstract: 5BW MARKING SMA5J22 marking code 5bw SMA5J36 5AW 83 SMA5J24A 5BZ marking 5AY SMA5J18A marking 5bs
    Text: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


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    SMA5J40CA J-STD-020, 2002/95/EC 2002/96/EC DO-214AC 18-Jul-08 transistor 5bw 5BW MARKING SMA5J22 marking code 5bw SMA5J36 5AW 83 SMA5J24A 5BZ marking 5AY SMA5J18A marking 5bs PDF

    marking code 5AW

    Abstract: No abstract text available
    Text: New Product SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


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    SMA5J40CA J-STD-020, 2002/95/EC 2002/96/EC DO-214AC 11-Mar-11 marking code 5AW PDF

    VSO05561

    Abstract: 807W
    Text: BC 807W, BC 808W PNP Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Complementary types: BC 817W, BC 818W NPN 1 Pin Configuration VSO05561 Type Marking Package


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    VSO05561 07-16W OT-323 07-25W 07-40W 08-16W 08-25W VSO05561 807W PDF

    5Cs transistor

    Abstract: Q62702-C2328 C2328 transistor C2330 transistor 5cs transistor 5bs Q62702-C2330 c2330 1B marking transistor TRANSISTOR C2328
    Text: BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN Type Marking Ordering Code Pin Configuration Package


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    07-16W BC817W, BC818W Q62702-C2325 OT-323 07-25W Q62702-C2326 07-40W 5Cs transistor Q62702-C2328 C2328 transistor C2330 transistor 5cs transistor 5bs Q62702-C2330 c2330 1B marking transistor TRANSISTOR C2328 PDF

    5Cs transistor

    Abstract: 5BS transistor marking 5bs 5as package package marking 5as transistor 5bs
    Text: BC807./ BC808. PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817./W, BC818./W NPN Type Marking Pin Configuration BC807-16


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    BC807. BC808. BC817. BC818. BC807-16 BC807-16W BC807-25 BC807-25W BC807-40 BC807-40W 5Cs transistor 5BS transistor marking 5bs 5as package package marking 5as transistor 5bs PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC8003 (Tentative) Silicon NPN epitaxial planar type For low frequency output amplification • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit  Package Collector-base voltage (Emitter open)


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    2002/95/EC) DSC8003 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC7003 (Tentative) Silicon NPN epitaxial planar type For low frequency output amplification • Absolute Maximum Ratings Ta = 25°C Parameter  Package  Code MiniP3-F2-B Symbol Rating Unit


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    2002/95/EC) DSC7003 PDF

    5az 11

    Abstract: 5BW 30 5bw 12 marking code 5bw marking code 5AW marking 5AY 5bm Marking sma5j5
    Text: SMA5J5.0 thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40 V Peak Pulse Power 500 W DO-214AC SMA Cathode Band 0.065 (1.65) 0.110 (2.79)


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    DO-214AC 08-Apr-05 5az 11 5BW 30 5bw 12 marking code 5bw marking code 5AW marking 5AY 5bm Marking sma5j5 PDF

    transistor 5bw

    Abstract: marking code 5bw SMA5J22 marking 5bw marking code 5AW SMA5J18A SMA5J36 marking 5AY 5Am Marking marking code 5bw 67
    Text: SMA5J5.0 thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40 V Peak Pulse Power 500 W DO-214AC SMA Cathode Band 0.065 (1.65) 0.110 (2.79)


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    DO-214AC DO-214AC 11-Mar-04 transistor 5bw marking code 5bw SMA5J22 marking 5bw marking code 5AW SMA5J18A SMA5J36 marking 5AY 5Am Marking marking code 5bw 67 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaA<5As IRED & PHOTCHC TLP559 TLP559 DIGITAL LOGIC G RO UND ISOLATION LINE RECEIVER M IC RO PRO C ESSO R SYSTEM INTERFACES SW ITC H IN G P O W E R SU PPLY FEED BAC K CONTROL TRANSISTOR INVERTO R T h e T O S H IB A T L P5 5 9 consists of a G aA € A s high-output lig h t


    OCR Scan
    TLP559 TLP559) 2500Vrms TIP559) PDF

    EE - CH4

    Abstract: No abstract text available
    Text: N J U 7 3 0 4 8-CHANNEL M U LT IP L E X E R WI T H SAMPLE AND HOLD PACKAGE OUTLINE GENERAL DESCRIPTION The NJU7304 is a C-MOS 8-channel multiplexer with sample and hold function. It consists of C-MOS o p amplifier, analog switch, hold-capacitor and 1/8 decoder.


    OCR Scan
    NJU7304 NJU7304D EE - CH4 PDF