591-5A1
Abstract: SP9T-SP10T temperature switch 12 vdc
Text: 591-5A1 Series Latching Terminated, SMA The DowKey 9 to 10 Position Latching Terminated switch is a multiposition electro-mechanical coaxial switch with suppression diodes and a solid state self cut-off circuit. Utilizing SMA connectors, the RF characteristics are excellent over the DC-18 GHz frequency range.
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591-5A1
DC-18
91-420803A
91-430803A
5A1-420823
5A1-430823
5A1-420803A
5A1-430803A
91-420823A
SP9T-SP10T
temperature switch 12 vdc
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591-5A1
Abstract: temperature switch 12 vdc 5A1-520803 d 1667
Text: 591-5A1 Series Normally Open Terminated, SMA DowKey’s 9 to 10 Position Normally Open switch is a multi-position electro-mechanical coaxial switch with SMA connectors. The RF characteristics are excellent over the DC-18 GHz frequency range. Options include a “D” type control connectors, moisture seal, indicator
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591-5A1
DC-18
5A1-520823
5A1-530823
91-520803A
91-530803A
5A1-520803A
5A1-530803A
91-520823A
temperature switch 12 vdc
5A1-520803
d 1667
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Untitled
Abstract: No abstract text available
Text: SP9T-SP10T 591-5A1 Latching Terminated | SMA RF Characteristics s DC-18 GHz s Low/Medium Power s 1M Life Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-4 1.20 70 0.20 4-8 1.30 65 0.30 8-12.4 1.40 60 0.40 12.4-18 1.60 55 0.60 Note: Performance may vary depending on selected options
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SP9T-SP10T
591-5A1
DC-18
SP10T
coms800
AS9100/ISO-9001:
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Untitled
Abstract: No abstract text available
Text: SP9T-SP10T 591-5A1 Normally Open Terminated | SMA RF Characteristics s DC-18 GHz s Low/Medium Power s 1M Life Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-4 1.20 70 0.20 4-8 1.30 65 0.30 8-12.4 1.40 70 0.40 12.4-18 1.50 60 0.50
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SP9T-SP10T
591-5A1
DC-18
SP10T
coms800
AS9100/ISO-9001:
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SP9T-SP10T
Abstract: No abstract text available
Text: SP9T-SP10T 591-5A1 Latching | SMA RF Characteristics s DC-18 GHz s Low/Medium Power s 1M Life Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-4 1.20 70 0.20 4-8 1.30 65 0.30 8-12.4 1.40 60 0.40 12.4-18 1.60 55 0.60 Note: Performance may vary depending on selected options
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591-5A1
SP9T-SP10T
DC-18
SP10T
AS9100/ISO-9001:
coms800
SP9T-SP10T
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5a1 DIODE
Abstract: No abstract text available
Text: SP9T-SP10T 591-5A1 Normally Open | SMA RF Characteristics s DC-18 GHz s Low/Medium Power s 1M Life Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-4 1.20 70 0.20 4-8 1.30 65 0.30 8-12.4 1.40 60 0.40 12.4-18 1.60 55 0.60 Note: Performance may vary depending on selected options
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591-5A1
SP9T-SP10T
DC-18
SP10T
AS9100/ISO-9001:
coms800
5a1 DIODE
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A476
Abstract: 6937A
Text: & ' " ,F86ADB5F *8 7#A*9=A "#"A&$>&DF#$A(%#DFA(#FD+!+35 693?=7"A(+A %+>'$#A#/F#!!#D(A2379:8A&D$A!+6A3&(# F&%3#-A7#AF+0 !#0#D(&%5A693?=7"A0&5A1#A "#$ 'DA,E1%'$3#9A5D>#%(#%"A&D$A+(#%
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5A693?
123A718A
19AAAA52A
A7143
2333A7143
2AAAA7143
19AAA52A
A7143
A476
6937A
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WOST05C
Abstract: 15KV WOST12C 5a1 DIODE
Text: WOST04C thru WOST15C Surface Mount TVS Diode Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 4-15 VOLTS P b Lead Pb -Free Features: * Transient Protection for data lines as per IEC 61000-4-2(ESD)15KV(air), 8KV(contact) * 300 Watts Peak Power Protection. (tp=8/20µS)
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WOST04C
WOST15C
OT-23
OT-23
18-Sep-09
WOST05C
15KV
WOST12C
5a1 DIODE
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SO56-2
Abstract: 11A2 11B2 Diode 9b2 diode diode 1a2 10A1 10A2 11A1 12A1 12A2
Text: IDTQS316212 HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH DESCRIPTION: FEATURES: − − − − − Enhanced N channel FET with no inherent diode to Vcc Low propagation delay
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IDTQS316212
24-BIT
56-pin
QS316212
12-bit
O56-1)
SO56-2
11A2
11B2 Diode
9b2 diode
diode 1a2
10A1
10A2
11A1
12A1
12A2
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S708
Abstract: TOSHIBA TPS708 TPS708 TLN108 TLN210 Toshiba S708
Text: TPS708 F TOSHIBA Photo Diode Silicon PN TPS708(F) Lead Free Product Optical Switch • TO−18 metal package • High sensitivity : ISC = 1.5µA(typ.) Unit in mm • Small dark current : ID = 10pA(typ.) • TLN108(F)(λP = 940nm) and TLN210(F)(λP = 880nm) are available
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TPS708
TLN108
940nm)
TLN210
880nm)
S708
TOSHIBA TPS708
Toshiba S708
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zener 6c2
Abstract: zener 4c3 zener 5c1 zener 5A6 zener 5A1 zener 2a7 zener 9A1 4C3 zener 4C7 marking code 5a6 zener
Text: GLZ2.0 A (B)(D) THRU GLZ56(A)(B)(C) SURFACE MOUNT ZENER DIODES MINI-MELF SOD-80/DO-213AA Planar Die construction 500mV Power Dissipationie construction Ieally Sulted for Automated Assembly Processes 0.146(3.70) 0.130(3.30) 0.063(1.60) 0.055(1.40) 0.020(0.50)
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GLZ56
OD-80/DO-213AA
500mV
MIL-STD-202E
zener 6c2
zener 4c3
zener 5c1
zener 5A6
zener 5A1
zener 2a7
zener 9A1
4C3 zener
4C7 marking code
5a6 zener
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STZ8043
Abstract: STZ8200 STZ8043B zener 5c1 1n 53558 STZ8051
Text: STZ8000 Series Silicon Planar Zener Diodes For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 Top View Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation
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STZ8000
OD-323
STZ8360A
STZ8360B
STZ8360C
STZ8390
STZ8390A
STZ8390B
STZ8390C
STZ8043
STZ8200
STZ8043B
zener 5c1
1n 53558
STZ8051
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.
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LBC807-16LT1G
LBC807-25LT1G
LBC807-40LT1G
LBC807
3000/Tape
LBC807-16LT3G
10000/Tape
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zener 2B1
Abstract: marking code ZENER 5c1 zener diode 5B1 zener diode marking 3t1 planar transistor 5B1 zener 5c1 3A1 zener diode marking code 5b1 STZ8000
Text: STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top view Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation
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STZ8000
OD-323
OD-323
zener 2B1
marking code ZENER
5c1 zener diode
5B1 zener diode
marking 3t1
planar transistor 5B1
zener 5c1
3A1 zener diode
marking code 5b1
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zener 6c2
Abstract: sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C
Text: BZX84C-BS SERIES 4.7V to 36V SILICON PLANAR VOLTAGE REGULATOR DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * SOT-23 Package * Low Voltage General Purpose Voltage Regulator Diode SOT-23 MECHANICAL DATA * * * * * .052 1.325 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant
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BZX84C-BS
OT-23
OT-23
MIL-STD-202E
zener 6c2
sot-23 Marking 8C2
6c2 diode
5B1 zener diode sot-23
Diode SOT-23 marking 27C
5c1 zener diode
SOT23 MARKING 5b1
27BSB
5B1 IR
BZX84C
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zener 2B1
Abstract: marking code ZENER zener 4a1 5c1 zener diode marking code 5b1 zener 5c1 marking 3t1 zener 5A1 STZ8039 5B1 zener diode
Text: STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top view Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation
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STZ8000
OD-323
STZ8390C
OD-323
zener 2B1
marking code ZENER
zener 4a1
5c1 zener diode
marking code 5b1
zener 5c1
marking 3t1
zener 5A1
STZ8039
5B1 zener diode
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IDT74ALVCH32244
Abstract: 7a3 diode
Text: IDT74ALVCH32244 3.3V CMOS 32-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS INDUSTRIAL TEMPERATURE RANGE IDT74ALVCH32244 3.3V CMOS 32-BIT BUFFER/ DRIVER WITH 3-STATE OUTPUTS AND BUS-HOLD DESCRIPTION: FEATURES: This 32-bit buffer/driver is built using advanced dual metal CMOS
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IDT74ALVCH32244
32-BIT
32-BIT
16-bit
ALVCH32244
IDT74ALVCH32244
7a3 diode
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CBT3383
Abstract: SN74CBT3383C SN74CBT3383CDBQR SN74CBT3383CDBR SN74CBT3383CDW SN74CBT3383CDWR C101
Text: SN74CBT3383C 10ĆBIT FET BUSĆEXCHANGE SWITCH 5ĆV BUS SWITCH WITH -2ĆV UNDERSHOOT PROTECTION SCDS175 − SEPTEMBER 2004 D Undershoot Protection for Off-Isolation on D D D D D D D D D D D D DB, DBQ, DGV, DW, OR PW PACKAGE TOP VIEW A and B Ports Up to −2 V
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SN74CBT3383C
10BIT
SCDS175
CBT3383
SN74CBT3383C
SN74CBT3383CDBQR
SN74CBT3383CDBR
SN74CBT3383CDW
SN74CBT3383CDWR
C101
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1Bn-12Bn
Abstract: diagram of diode 1a2 10A1 10A2 11A1 11A2 12A1 QS316212
Text: QS316212, QS3162212 QuickSwitch Products High-Speed CMOS 24-Bit Bus-Exchange Switch Q QUALITY SEMICONDUCTOR, INC. QS316212 QS3162212 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs
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QS316212,
QS3162212
24-Bit
QS316212
56-pin
QS3162212
QS316212
1Bn-12Bn
diagram of diode 1a2
10A1
10A2
11A1
11A2
12A1
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5a2 DIODE
Abstract: No abstract text available
Text: SN74CBTS16212 24-BIT FET BUS-EXCHANGE SWITCH WITH SCHOTTKY DIODE CLAMPING SCDS036B – DECEMBER 1997 – REVISED MAY 1998 D 5-Ω Switch Connection Between Two Ports D TTL-Compatible Input Levels D Latch-Up Performance Exceeds 250 mA Per D D DGG, DGV, OR DL PACKAGE
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SN74CBTS16212
24-BIT
SCDS036B
MIL-STD-833,
300-mil
5a2 DIODE
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IDTQS316209
Abstract: QS316209 TYPE XB2 - B G 4 1 3a29
Text: IDTQS316209 HIGH-SPEED CMOS 18-BIT BUS EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 18-BIT BUS EXCHANGE SWITCH FEATURES: − − − − − − DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc 5Ω bidirectional switches connect inputs to outputs
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IDTQS316209
18-BIT
48-pin
QS316209
DTQS316209
SO48-1)
SO48-2)
IDTQS316209
TYPE XB2 - B G 4 1
3a29
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Untitled
Abstract: No abstract text available
Text: IDTQS316212 HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH FEATURES: • • • • • DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc Low propagation delay
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IDTQS316212
24-BIT
QS316212
12-bit
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336b1
Abstract: 1XB2 IDTQS316209 QS316209 8A121 nd445 V1A23
Text: IDTQS316209 HIGH-SPEED CMOS 18-BIT BUS EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 18-BIT BUS EXCHANGE SWITCH FEATURES: − − − − − − DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc 5Ω bidirectional switches connect inputs to outputs
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IDTQS316209
18-BIT
48-pin
QS316209
DTQS316209
SO48-1)
SO48-2)
336b1
1XB2
IDTQS316209
8A121
nd445
V1A23
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor M M PQ3725 NPN Silicon JV I a si M otorola Preferred Device JV I 5a1 i II ir v z i 5 Q E H iv= a 3 1 CASE 751B -05, STYLE 4 S O -16 MAXIMUM RATINGS Rating C ollector-E m itter Voltage C ollector-E m itter Voltage
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PQ3725
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